TWI459452B - A method of breaking the film attached to the back of the wafer, and a subsequent film - Google Patents

Description

Breaking method of the film attached to the back surface of the wafer and subsequent film

The present invention relates to an adhesive film to be mounted on a back surface of a wafer in which a plurality of streets are formed in a lattice shape on a surface and a plurality of regions separated by the plurality of boundaries are formed, along which the components are divided. The method of breaking the film which is attached to the back surface of the wafer and the film.

For example, in the semiconductor element manufacturing step, components such as ICs and LSIs are formed in a plurality of regions separated by a predetermined dividing line called a boundary formed in a lattice shape on the surface of a semiconductor wafer having a substantially disk shape. Each of the elements is formed by dividing the boundary path to form each element.

The element to be divided into individual elements is a die bonding die film called a die attach film having a thickness of 20 to 40 μm formed of an epoxy resin or the like on the back surface thereof. The wafer is bonded to the wafer bonding frame for supporting the element by the bonding film. In the method of mounting a bonding film for wafer bonding on the back surface of a device, a bonding film is adhered to the back surface of the semiconductor wafer, and the semiconductor wafer is pasted on the dicing tape through the bonding film, and is formed along the dicing tape. The boundary of the surface of the semiconductor wafer is cut by the cutting blade together with the film, thereby forming an element on the back side to which the film is attached. (For example, refer to Patent Document 1)

(Patent Document 1) Japanese Patent Laid-Open Publication No. 2000-182995

However, when the film is cut by the cutting blade together with the semiconductor wafer, the film is wound around the cutting blade, and a cut or crack occurs in the cut surface of the cut member, and a film is formed in the film. There is a problem with the burrs and the cause of the disconnection when the wires are engaged.

In recent years, electric machines such as mobile phones and personal computers have been demanded to be lighter and smaller, and are required to have thinner components. In order to divide the element thinner, a division technique called a so-called pre-cut method has been put into practical use. The pre-cutting method is a dividing groove in which a surface of the wafer is formed along a boundary line to a predetermined depth (corresponding to a depth of a finished product thickness), and then the back surface of the wafer on which the dividing groove is formed is ground and presented on the back surface. The technique of separating the grooves into individual elements can process the thickness of the elements to 50 μm or less.

However, when the wafer is divided into individual elements by the pre-cut method, after the trench is formed at a predetermined depth along the boundary surface of the wafer, the back surface of the wafer is ground to form a dividing groove on the back surface. Therefore, it is not possible to mount the wafer bonding follow-up film on the back side of the wafer. Therefore, when the element divided by the pre-cut method is bonded to the wafer bonding frame, it is necessary to insert the bonding agent between the element and the wafer bonding frame, and the bonding operation cannot be performed smoothly.

In order to solve the above problem, a wafer bonding back film is mounted on the back surface of the wafer which is divided into individual elements by a pre-cut method, and the wafer is pasted on the dicing tape, and then the wafer is pasted by the dicing tape. A method of stripping the film along the dividing groove has been proposed. (For example, refer to Patent Document 2)

(Patent Document 2) Japanese Patent Laid-Open Publication No. 2004-193241

On the other hand, in recent years, a laser processing method in which a pulsed laser beam having a wavelength of transparency to a wafer is used, and a laser beam is irradiated with a focused spot in a region to be divided, has been tried. The segmentation method using the laser processing method is to irradiate a pulsed laser beam having a wavelength (for example, 1064 nm) transparent to the wafer by a light collecting point inside the wafer, and continuously form a boundary along the boundary inside the wafer. The altered layer is subjected to an external force along a boundary in which the strength is lowered by forming the altered layer, thereby dividing the wafer.

In addition, a pulsed laser beam having a wavelength (for example, 355 nm) that absorbs light on the wafer is irradiated along the boundary, and after forming a laser processing groove along the boundary, an external force is applied along the boundary to thereby divide the wafer. The method has also been put into practical use.

According to the above laser processing method, a wafer bonding bonding film is mounted on the back surface of the wafer in which the altered layer or the laser processing groove is formed along the boundary, and the wafer is pasted and adhered to the dicing tape, and then expanded. Cutting the belt to form a metamorphic layer or a laser processing groove, thereby dividing the individual elements along the boundary line that reduces the strength, and the method of breaking the film along the outer circumference of each of the divided elements has been It is proposed (for example, refer to Patent Document 3).

(Patent Document 3) Japanese Patent Laid-Open Publication No. 2004-273895

The adhesive film for wafer bonding is formed to be larger than the outer diameter of the wafer, and is uniformly mounted on the back surface of the wafer. Therefore, when the dicing tape to which the film is attached is expanded to break the film along the respective elements, the film which is protruded from the outer periphery of the wafer is broken and scattered, and the chips adhere to the surface of the element. The fragments of the adhesive film attached to the surface of the element are difficult to remove, and there is a problem that the quality of the element is lowered.

The present invention has been made in view of the above-described facts, and its main technical object is to provide a method in which when a dicing tape adhered to a film is expanded to break the film along each element, the film fragments are not adhered to each other. A method of separating the film on the surface of the device, which is mounted on the back surface of the wafer, and a film.

In order to solve the above-mentioned main technical problems, according to the present invention, there is provided a method for separating a film attached to a back surface of a wafer, which is to be mounted on a surface in a lattice shape with a plurality of boundaries and in the complex boundary The plurality of regions separated by the track form a back surface of the wafer on which the component is formed, and the adhesive film having an outer diameter larger than the outer diameter of the wafer is attached to the surface of the dicing tape mounted on the annular frame, along the component A method of breaking a film attached to the back side of a wafer, characterized by:

After a radial plurality of division grooves are formed in a region of the outer peripheral portion of the film which is protruded from the outer periphery of the film, the dicing tape is expanded to break the film along the element, and the outer periphery of the film is attached. The region protruding from the outer periphery of the wafer is separated along the radial plural dividing groove.

Further, according to the present invention, there is provided a method of separating a film attached to a back surface of a wafer, which is to be mounted on a plurality of boundaries formed in a lattice on the surface and separated by the plurality of boundaries The back surface of the wafer on which the component is formed is formed, and the adhesive film having an outer diameter larger than the outer diameter of the wafer is attached to the surface of the dicing tape attached to the annular frame, and is mounted along the component. A method for separating a film disposed on the back side of a wafer, characterized by:

A radial plurality of division grooves are formed in an outer peripheral portion of the adhesive film, and the dicing tape is expanded to adhere the film edge in a state where the adhesive film is mounted on the back surface of the wafer and adhered to the surface of the dicing tape. The element is divided, and the region of the outer peripheral portion of the film that protrudes from the outer periphery of the wafer is separated along the radial plural dividing groove.

Furthermore, according to the present invention, there is provided a bonding film which is provided on a back surface of a wafer and which has an outer diameter larger than the outer diameter of the wafer, and a plurality of radial dividing grooves are formed in the outer peripheral portion.

According to the invention, after the radial multi-divided groove is formed in a region in which the outer peripheral edge of the wafer is protruded from the outer peripheral portion of the film, or the subsequent film in which the radial multi-divided groove is formed in the outer peripheral portion is mounted on the wafer On the back side, and in a state of being stuck on the surface of the dicing tape, the dicing tape is expanded to break the following film along the element, and the region protruding from the outer periphery of the wafer in the outer peripheral portion of the film is along the radial Since the plurality of division grooves are separated, the region protruding from the outer periphery of the wafer in the outer peripheral portion of the film is separated into a fan-shaped film sheet. Therefore, there is no possibility that the film is randomly broken and the fragments are scattered, and There may be cases where the film is attached to the surface of the element. Therefore, it is possible to prevent the quality of the element from being lowered due to adhesion of fragments of the film to the surface of the element.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a preferred embodiment of a method for separating a film attached to a back surface of a wafer and a film according to the present invention will be described in detail with reference to the accompanying drawings.

Here, a form in which a wafer of a subsequent film is mounted on the back surface will be described.

In the first (a) and (b) of FIG. 1, the wafer bonding bonding film 3 is mounted on the back surface of the semiconductor wafer 2 which is divided into individual elements by a so-called pre-cut method, and the bonding film 3 side is pasted. The protective tape 4 adhered to the surface of the semiconductor wafer 2 is peeled off on the surface of the dicing tape T mounted on the annular frame F. In the semiconductor wafer 2 shown in FIGS. 1(a) and 1(b), a plurality of boundaries 21 are formed in a lattice shape on the surface 2a, and elements 22 are formed in a plurality of regions partitioned by the plurality of boundaries 21. In order to divide the semiconductor wafer 2 into individual elements by a so-called pre-cut method, a cutting device is used to form a predetermined depth along the boundary 21 formed on the surface 2a of the semiconductor wafer 2 (corresponding to the finished thickness of the element) The dividing groove 23 of the depth (the dividing groove forming step). Next, the protective tape 4 is adhered to the surface of the semiconductor wafer 2 on which the dividing grooves 23 are formed, the back surface of the semiconductor wafer 2 is ground, and the dividing grooves are formed on the back surface, thereby dividing into the respective elements 22 (dividing groove presentation step). The wafer bonding bonding film 3 is mounted on the back surface 2b of the semiconductor wafer 2 divided into the respective elements 22 as described above, and the bonding film 3 side is adhered to the surface of the dicing tape T mounted on the annular frame F. Next, as shown in FIG. 1(a), the protective tape 4 adhered to the surface of the semiconductor wafer 2 is peeled off.

The adhesive film 3 is made of an epoxy resin film having a thickness of 20 to 40 μm, and is heated at a temperature of 80 to 200 ° C to be pressed and mounted on the back surface 2b of the semiconductor wafer 2. The adhesive film 3 is formed to be larger than the outer diameter of the semiconductor wafer 2 in order to be surely mounted on the back surface of the semiconductor wafer 2. Therefore, as shown in FIG. 1(a), the outer peripheral portion 30 of the film 3 is in a state of being protruded from the outer peripheral edge of the semiconductor wafer 2. Among them, a dicing tape with an adhesive film attached to the film may be preliminarily adhered to the surface of the dicing tape. At this time, as described above, the back surface of the semiconductor wafer 2, which is divided into individual elements by the pre-cut method, is placed on the adhesive film attached to the dicing tape with the film attached to the annular frame, and is 80. The film 3 is pressed and mounted on the back surface 20b of the semiconductor wafer 20 while being heated to a temperature of 200 °C. The annular frame F is formed in a ring shape by, for example, stainless steel having a thickness of 1 mm. In the embodiment shown in the drawings, the dicing tape T is coated with an adhesive paste having a thickness of about 5 μm on the surface of a sheet substrate made of polyvinyl chloride (PVC) having a thickness of 70 μm.

In the second (a) and (b) of FIG. 2, the wafer bonding bonding film 3 is mounted on the back surface of the semiconductor wafer 2 in which the altered layer 24 is formed along the boundary 21, and the adhesive film 3 side is pasted. The state of being attached to the surface of the dicing tape T of the annular frame F. In order to form the altered layer 24 along the boundary 21 inside the semiconductor wafer 2, a pulse having a wavelength (for example, 1064 nm) that is transparent to the wafer is formed by the light collecting point on the back surface 2b side of the semiconductor wafer 2. The laser beam is irradiated along the boundary 21, and the altered layer 24 is continuously formed along the boundary 21 inside the semiconductor wafer 2 (the metamorphic layer forming step). The wafer bonding bonding film 3 is mounted on the back surface 2b of the semiconductor wafer 2 in which the modified layer 24 is formed along the boundary 21 as described above, and the bonding film 3 side is attached to the ring frame F. The surface of the cutting tape T.

In the third (a) and (b) of FIG. 3, the wafer bonding bonding film 3 is mounted on the back surface of the semiconductor wafer 2 on which the laser processing grooves 25 are formed along the boundary 21, and the bonding film 3 side is attached. The state is adhered to the surface of the dicing tape T attached to the annular frame F. In order to form the laser processing groove 25 along the boundary 21 in the semiconductor wafer 2, for example, the wafer bonding bonding film 3 is mounted on the back surface 2b of the semiconductor wafer 2, and the bonding film 3 side is pasted on the above-mentioned device. The surface of the strip T is cut by the annular frame F. Next, from the surface 2a side of the semiconductor wafer 2, a pulsed laser beam having a wavelength (for example, 355 nm) which is absorptive to the wafer is irradiated along the boundary 21, and a laser processing groove 25 is formed along the boundary 21 (Ray) The processing groove forming step).

As described above, when the wafer bonding bonding film 3 is mounted on the back surface 2b of the semiconductor wafer 2, and the bonding film 3 side is adhered to the surface of the dicing tape T mounted on the annular frame F, Next, in the outer peripheral portion of the film 3, a region 30 in which the outer peripheral edge of the semiconductor wafer 2 protrudes forms a dividing groove forming step of the plurality of divided grooves. This division groove forming step will be described with reference to Figs. 4(a) and (b). The embodiment shown in Figs. 4(a) and 4(b) is an example in which the dividing groove forming step is performed using the laser processing apparatus 5. In other words, the dicing tape T attached to the annular frame F is placed on the chuck table 51 of the laser processing apparatus 5, and the suction means (not shown) is actuated to be on the chuck base 51. The wafer bonding bonding film 3 and the semiconductor wafer 2 are suction-held by the dicing tape T. Next, the annular frame F is fixed by a clamp (not shown) disposed in the chuck base 41. Next, as shown in Fig. 4(a), the chuck holder 51 is moved to position the boundary portion of the film 3 and the outer periphery of the semiconductor wafer 2 directly under the concentrator 52 of the laser beam irradiation means. Next, while the pulsed laser beam is irradiated by the concentrator 42, the chuck holder 51 is moved in the direction indicated by the arrow X1, as shown in Fig. 4(b), if the outer periphery of the film 3 is followed (Fig. 4) The left end in (b) reaches directly below the concentrator 52, that is, the irradiation of the laser beam is stopped, and the movement of the cradle 51 is stopped. As a result, as shown in FIG. 4(b), the division groove 31 is formed in the radial direction (diameter direction) in the region 30 where the outer peripheral edge of the semiconductor wafer 2 protrudes from the outer peripheral portion of the film 3.

The dividing groove forming step is performed under the following processing conditions, for example. Light source for laser light: YVO4 laser or YAG laser

Wavelength: 355nm

Repeat frequency: 50kHz

Average output: 1W

Spot diameter: Φ5μm

When the above-described dividing groove forming step is carried out, the chuck holder 51 is rotated by a predetermined angle (for example, 10 degrees) (indexing step), and the dividing groove forming step is carried out. Thereafter, by performing the positioning step and the dividing groove forming step in reverse, as shown in FIG. 5, a radial plural dividing groove 31 can be formed in the region 30 which is surrounded by the outer periphery of the semiconductor wafer 2 in the outer peripheral portion of the film 3. .

In the above embodiment, an example in which the dividing groove forming step is performed by laser processing is shown. However, the dividing groove forming step may be carried out using a cutter.

Here, when the laser processing groove 25 is formed along the boundary 21 of the semiconductor wafer 2 as shown in FIG. 3, the dividing groove forming step may be performed before the laser processing groove forming step.

When the dividing groove forming step is carried out as described above, the dicing tape T to be mounted on the annular frame F is expanded, the film 3 is cut along the respective elements, and the semiconductor film is bonded to the outer periphery of the film 3 A region 30 in which the outer periphery of the circle 2 protrudes is subjected to a tape expansion step which is separated by a plurality of divided grooves 31 which are formed radially. This belt expansion step is carried out using the belt expansion device 6 shown in Fig. 6 in the illustrated embodiment. The tape expanding device 6 shown in Fig. 6 is provided with a frame holding means 61 for holding the annular frame F, and a dicing tape T to be attached to the annular frame F held by the frame holding means 61. The expansion means 62 for expansion. The frame holding means 61 is composed of an annular frame holding member 611 and a plurality of clamps 612 disposed as fixing means on the outer circumference of the frame holding member 611. The upper surface of the frame holding member 611 is formed with a mounting surface 611a on which the annular frame F is placed, and the annular frame F is placed on the mounting surface 611a. Next, the annular frame F placed on the placing surface 611a is fixed to the frame holding member 611 by the jig 612. The frame holding means 61 configured as described above is supported by the belt expanding means 62 so as to be movable forward and backward in the vertical direction.

The belt expanding means 62 is provided with an expansion drum 621 disposed inside the annular frame holding member 611. The expansion cylinder 621 has an inner diameter and an outer diameter which are smaller than the inner diameter of the annular frame F and larger than the outer diameter of the bonding film 3 which is adhered to the dicing tape T attached to the annular frame F. Further, the expansion cylinder 621 is provided with a support flange 622 at the lower end. The belt expansion means 62 in the illustrated embodiment is provided with a support means 63 for advancing and retracting the annular frame holding member 611 in the vertical direction. The support means 63 is composed of a plurality of cylinders 631 disposed on the support flange 622, and a piston rod 632 is coupled to a lower surface of the annular frame holding member 611. As described above, the support means 63 composed of the plurality of cylinders 631 selectively moves the annular frame holding member 611 to the mounting surface 611a and the expansion cylinder 621 as shown in Figs. 6 and 7(a). The upper end is a reference position of substantially the same height, and the annular frame holding member 611 is selectively moved to the mounting surface 611a as shown in Fig. 7(b). The upper end of the expanding cylinder 621 is expanded below a predetermined amount in the drawing. position.

The tape expansion device 6 in the illustrated embodiment is configured as described above, and mainly refers to FIG. 7 and illustrates the use of the tape expansion device 6 to expand the dicing tape T attached to the annular frame F. Next, the film 3 is divided along the element, and a band extending step of separating the region 30 protruding from the outer periphery of the semiconductor wafer 2 in the outer peripheral portion of the film 3 along the plurality of divided grooves 31 formed radially is formed.

The annular frame F supported by the dicing tape T (which is attached to the back surface 2b of the semiconductor wafer 2) to which the dividing groove forming step has been carried out as shown in Fig. 5 above is applied, as in the seventh As shown in (a), the frame holding member 611 is placed on the mounting surface 611a of the frame holding member 611 constituting the frame holding means 61, and is fixed to the frame holding member 611 by a jig 612 (frame holding step). At this time, the frame holding member 611 is positioned at the reference position as shown in Fig. 7(a).

Next, the plurality of cylinders 631 are actuated to lower the frame holding member 611 to the expanded position shown in Fig. 7(b). Therefore, the annular frame F fixed to the mounting surface 611a of the frame holding member 611 is also lowered. Therefore, the dicing tape T attached to the annular frame F as shown in Fig. 7(b) is in contact with The upper end edge of the expansion cylinder 621 is expanded to expand (with an expansion step). As a result, the tensile force is applied to the adhesive film 3 adhered to the dicing tape T in a radial manner. As described above, when a radial tensile force is applied to the adhesive film 3 adhered to the dicing tape T, as shown in Fig. 1 above, if the semiconductor wafer 2 is divided into the respective elements 22, the widening member 22 is Interval between. As a result, the film 3 is then separated along the outer periphery of each element 22, and then the region 30 protruding from the outer periphery of the semiconductor wafer 2 in the outer peripheral portion of the film 3 is enlarged as shown in Fig. 7(c), and is divided. The groove 31 is widened and separated into a fan-shaped film sheet 300 at the outer peripheral edge portion of the semiconductor wafer 2, and is maintained in a state of being adhered to the dicing tape T.

Further, when the altered layer 24 or the laser processing groove 25 is formed along the boundary 21 of the semiconductor wafer 2 as shown in the above FIG. 2 or FIG. 3, as described above, when the pair is pasted on the dicing tape T When the film 3 is subjected to a radial stretching force, the semiconductor wafer 2 is divided into the respective elements 22 along the boundary 21 which reduces the strength by forming the altered layer 24 or the laser processing groove 25. Next, the film 3 is then separated along the outer periphery of each of the divided elements 22, and then the region 30 protruding from the outer periphery of the semiconductor wafer 2 in the outer peripheral portion of the film 3 is connected to the above-mentioned seventh figure (c). In the same manner, the outer peripheral edge portion of the semiconductor wafer 2 is separated, and is separated into a fan-shaped film sheet, and is maintained in a state of being adhered to the dicing tape T.

In the tape expansion step, when the adhesive film 3 is divided along the outer periphery of each of the elements 22, a region 30 which is protruded from the outer periphery of the semiconductor wafer 2 in the outer peripheral portion of the film 3 is formed radially. Since the plurality of division grooves 31 are separated into the fan-shaped film sheets 300, there is no possibility that the film 3 is randomly broken to cause the fragments to scatter, and the fragments of the film 3 are not attached to the surface of the element 22. situation.

When the tape expansion step is carried out as described above, the pickup device 7 is actuated as shown in Fig. 8, and the component 22 positioned at a predetermined position is picked up by the pickup collet 71 (pickup step), and conveyed to a tray or wafer not shown. Joining step.

Next, another embodiment of the method for dividing the adhesive film attached to the back surface of the wafer of the present invention will be described with reference to FIGS. 9 and 10.

In the embodiment shown in Fig. 9, a film in which a plurality of radially divided grooves are formed in the outer peripheral portion is used. That is, as shown in Fig. 9(a), the film 3 has an outer diameter larger than the outer diameter of the semiconductor wafer 2, and a radial plural dividing groove 31 is formed in the outer peripheral portion thereof. Here, the radial plural dividing groove 31 may be formed by laser processing or may be formed using a cutter or the like. Further, the radial plural dividing groove 31 may be formed to the center portion. The adhesive film 3 formed as described above is adhered to the back surface 2b of the semiconductor wafer 2, which is divided into individual elements by a pre-cut method, as shown in FIG. 9(b), on one side at 80 to 200 ° C. The temperature is heated and mounted on the back surface 2b of the semiconductor wafer 2. Next, as shown in Fig. 9(c), the dicing tape T attached to the annular frame F is adhered. Next, the protective tape 4 adhered to the surface of the semiconductor wafer 2 is peeled off.

The embodiment shown in Fig. 10 uses a dicing tape to which an adhesive film is attached in advance to the surface of the dicing tape. In other words, as shown in Fig. 10(a), the outer peripheral portion of the adhesive film 3 adhered to the dicing tape T attached to the annular frame F is identical to the adhesive film 3 shown in Fig. 9 in advance. A plurality of divided division grooves 31 are formed. As shown in Fig. 10(b), the back surface 2b of the semiconductor wafer 2, which is divided into individual elements by, for example, the above-described cutting, is adhered to the adhesive film 3 adhered to the dicing tape T as shown above, and is 80. The back surface 2b of the semiconductor wafer 2 is mounted while being heated to a temperature of 200 °C. Next, the protective tape 4 adhered to the surface of the semiconductor wafer 2 is peeled off.

As described above, when the back surface 2b of the semiconductor wafer 2 is transmitted through the film 3 (the radial plural dividing groove 31 is formed in the outer peripheral portion) and adhered to the dicing tape T attached to the annular frame F, the above-described use is performed. The tape expansion device 6 is used to carry out the tape expansion step described above. As a result, similarly to the embodiment shown in Figs. 1 to 7, the film 3 is separated along the outer periphery of each element 22, and then the outer periphery of the film 3 is surrounded by the outer periphery of the semiconductor wafer 2. The region where the edge protrudes becomes a fan-shaped film sheet and is separated, and is maintained in a state of being adhered to the dicing tape T. Therefore, the same operational effects as those of the embodiment shown in Figs. 1 to 7 described above are achieved.

2. . . Semiconductor wafer

2a. . . surface

2b. . . back

3. . . Next film

4. . . Protective tape

5. . . Laser processing device

6. . . Belt expansion device

20. . . Semiconductor wafer

twenty one. . . Boundary road

twenty two. . . element

twenty three. . . Splitting groove

twenty four. . . Metamorphic layer

25. . . Laser processing trench

30. . . Peripheral part (area)

31. . . Splitting groove

51. . . Chuck seat

52. . . Concentrator

61. . . Frame keeping means

62. . . Expansion means

63. . . Support means

71. . . Pick up collet

300. . . Film sheet

611. . . Frame holding member

611a. . . Mounting surface

612. . . Fixture

621. . . Expansion cylinder

622. . . Support flange

631. . . cylinder

632. . . Piston rod

F. . . Ring frame

T. . . Cutting tape

1 is a perspective view showing a first embodiment in which a semiconductor wafer on which a wafer-bonding bonding film is mounted on a back surface is attached to a dicing tape attached to an annular frame.

Fig. 2 is a perspective view showing a second embodiment in which a semiconductor wafer on which a wafer-bonding bonding film is mounted on a back surface is attached to a dicing tape attached to an annular frame.

Fig. 3 is a perspective view showing a third embodiment in which a semiconductor wafer on which a wafer-bonding bonding film is mounted on a back surface is attached to a dicing tape attached to an annular frame.

Fig. 4 is an explanatory view showing a step of forming a dividing groove in the breaking method of the film which is attached to the back surface of the wafer of the present invention.

Fig. 5 is a perspective view showing a state in which the subsequent belt forming step of the dividing groove forming step shown in Fig. 4 is supported by the endless belt and supported by the annular frame.

Fig. 6 is a perspective view showing the tape expanding device for carrying out the tape expanding step in the breaking method of the film attached to the back surface of the wafer of the present invention.

Fig. 7 is an explanatory view showing a tape expanding step in the breaking method of the film which is attached to the back surface of the wafer of the present invention.

Fig. 8 is an explanatory view showing a pickup step of the breaking method of the film attached to the back surface of the wafer of the present invention.

Fig. 9 is a view showing a bonding film used in the method for separating a film which is mounted on the back surface of the wafer of the present invention, and a film which is attached to the back surface of the semiconductor wafer, and which is attached to the ring shape. An illustration of the step of attaching the dicing tape of the frame.

Fig. 10 is an explanatory view showing another embodiment of a film which is used for the method of dividing the film which is mounted on the back surface of the wafer of the present invention, and a step of mounting the back surface of the semiconductor wafer on the film.

2. . . Semiconductor wafer

2a. . . surface

2b. . . back

3. . . Next film

twenty one. . . Boundary road

twenty two. . . element

twenty three. . . Splitting groove

30. . . Peripheral part (area)

31. . . Splitting groove

F. . . Ring frame

T. . . Cutting tape

Claims (3)

A method for breaking a film attached to a back surface of a wafer, which is to be mounted on a wafer having a plurality of boundaries formed in a lattice shape on a surface and having a plurality of regions separated by the plurality of boundaries a back film having an outer diameter larger than the outer diameter of the wafer, which is attached to the back surface of the wafer while being adhered to the surface of the dicing tape mounted on the annular frame a method for separating a film, characterized in that after a peripheral portion of the outer peripheral portion of the film is formed with a radial plurality of dividing grooves, the dicing tape is expanded to divide the film along the element. The region of the outer peripheral portion of the film which is protruded from the outer periphery of the wafer is separated along the radial plural dividing groove. A method for breaking a film attached to a back surface of a wafer, which is to be mounted on a wafer having a plurality of boundaries formed in a lattice shape on a surface and having a plurality of regions separated by the plurality of boundaries a back film having an outer diameter larger than the outer diameter of the wafer, which is attached to the back surface of the wafer while being adhered to the surface of the dicing tape mounted on the annular frame A method for dividing a film, characterized in that a radial plurality of dividing grooves are formed on an outer peripheral portion of the bonding film, and the bonding film is attached to a back surface of the wafer and adhered to a surface of the dicing tape. The dicing tape is expanded to break the adhesive film along the element, and the region of the outer peripheral portion of the film that protrudes from the outer periphery of the wafer is separated along the radial plural dividing groove. A follow-up film is an adhesive film mounted on the back surface of a wafer and has an outer diameter larger than the outer diameter of the wafer, and a plurality of radial dividing grooves are formed in the outer peripheral portion.