JP2021015889A - Processing method of workpiece - Google Patents

Processing method of workpiece Download PDF

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Publication number
JP2021015889A
JP2021015889A JP2019129633A JP2019129633A JP2021015889A JP 2021015889 A JP2021015889 A JP 2021015889A JP 2019129633 A JP2019129633 A JP 2019129633A JP 2019129633 A JP2019129633 A JP 2019129633A JP 2021015889 A JP2021015889 A JP 2021015889A
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Prior art keywords
workpiece
work piece
division
starting point
unit
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JP7326053B2 (en
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金艶 趙
Kinen Cho
金艶 趙
良彰 淀
Yoshiaki Yodo
良彰 淀
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Disco Corp
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Disco Abrasive Systems Ltd
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Priority to JP2019129633A priority Critical patent/JP7326053B2/en
Priority to KR1020200073376A priority patent/KR20210007840A/en
Priority to US16/918,177 priority patent/US11569129B2/en
Priority to DE102020208482.3A priority patent/DE102020208482A1/en
Priority to CN202010644377.6A priority patent/CN112216654A/en
Priority to TW109123219A priority patent/TW202103226A/en
Publication of JP2021015889A publication Critical patent/JP2021015889A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Abstract

To provide a processing method of a workpiece for efficiently dividing a workpiece in which members having different materials on the reverse face are laminated.SOLUTION: A processing method of a workpiece includes a holding step, and a division origin formation step. The holding step is a step of holding a reverse face 107 side of a workpiece 101 on a holding table 11. The division origin formation step is a step of irradiating the workpiece 101 with laser light 15 of a wavelength having permeability for the workpiece 101, from a surface 103 side of the workpiece 101 while aligning a focus point 16 with the inside of the workpiece 101 after execution of the holding step, and forming a modified layer 121 in the workpiece 101, and forming a division origin 129 in a member 109 having a different material from that of the workpiece 101 laminated on the reverse face 107 of the workpiece 101, by the laser light 15 leaked from the focus point 16 to the reverse face 107 side.SELECTED DRAWING: Figure 6

Description

本発明は、被加工物の加工方法に関する。 The present invention relates to a method for processing a workpiece.

裏面にＤＡＦ（Die Attached Film）が貼着された被加工物を分割する場合、被加工物を分割した後に、被加工物とは別にＤＡＦを分割する技術が知られている（特許文献１参照）。また、裏面にメタル膜が形成された被加工物を分割する場合、被加工物を分割した後に、被加工物とは別にＤＡＦを分割する技術が知られている（特許文献２参照）。 When dividing a work piece to which a DAF (Die Attached Film) is attached to the back surface, there is known a technique of dividing the work piece and then dividing the DAF separately from the work piece (see Patent Document 1). ). Further, when dividing a work piece having a metal film formed on the back surface, there is known a technique of dividing the work piece and then dividing the DAF separately from the work piece (see Patent Document 2).

特開２０１４−１３０９１０号公報Japanese Unexamined Patent Publication No. 2014-130910 特開２００６−０７３６９０号公報Japanese Unexamined Patent Publication No. 2006-073690

しかしながら、特許文献１及び特許文献２に記載の技術のように、２回の工程に分けて分割する場合、分割の効率が悪いという問題があった。 However, when the technique is divided into two steps as in the techniques described in Patent Document 1 and Patent Document 2, there is a problem that the efficiency of division is poor.

本発明は、かかる問題点に鑑みてなされたものであり、その目的は、裏面に材質の異なる部材が積層された被加工物を効率よく分割する被加工物の加工方法を提供することである。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for efficiently dividing a work piece in which members having different materials are laminated on the back surface. ..

上述した課題を解決し、目的を達成するために、本発明の被加工物の加工方法は、被加工物の加工方法であって、被加工物の裏面には被加工物とは材質の異なる部材が積層され、被加工物の裏面側を保持テーブルに保持する保持ステップと、該保持ステップの実施後に、被加工物の表面側から、被加工物に対して透過性を有する波長のレーザー光線を被加工物の内部に集光点を合わせた状態で照射し、被加工物の内部に改質層を形成するとともに、該集光点から裏面側に漏れたレーザー光線によって該部材に分割起点を形成する分割起点形成ステップと、を備えることを特徴とする。 In order to solve the above-mentioned problems and achieve the object, the processing method of the workpiece of the present invention is a processing method of the workpiece, and the material of the back surface of the workpiece is different from that of the workpiece. A holding step in which the members are laminated and the back side of the work piece is held on the holding table, and after the holding step is performed, a laser beam having a wavelength that is transparent to the work piece is emitted from the front side of the work piece. Irradiation is performed with the condensing point aligned with the inside of the work piece to form a modified layer inside the work piece, and a division starting point is formed in the member by a laser beam leaking from the condensing point to the back surface side. It is characterized in that it includes a division starting point forming step.

該分割起点形成ステップの実施後に、被加工物の表面側をエキスパンドテープに貼着する貼着ステップと、該エキスパンドテープを拡張して、該分割起点に沿って被加工物及び該部材を分割する分割ステップと、を備えてもよい。 After the execution of the division starting point forming step, a sticking step of attaching the surface side of the work piece to the expanding tape and the expanding tape are expanded to divide the work piece and the member along the division starting point. It may include a split step.

該部材は、ＤＡＦまたはメタル膜であってもよい。 The member may be a DAF or a metal film.

本願発明は、裏面に材質の異なる部材が積層された被加工物を効率よく分割することができる。 According to the present invention, it is possible to efficiently divide a workpiece in which members of different materials are laminated on the back surface.

図１は、実施形態に係る被加工物の加工方法の加工対象の被加工物を含む被加工物ユニットの斜視図である。FIG. 1 is a perspective view of a work piece unit including a work piece to be machined in the work piece processing method according to the embodiment. 図２は、実施形態に係る被加工物の加工方法を示すフローチャートである。FIG. 2 is a flowchart showing a processing method of the workpiece according to the embodiment. 図３は、図２の分割起点形成ステップを実施する加工装置の斜視図である。FIG. 3 is a perspective view of a processing apparatus that carries out the division starting point forming step of FIG. 図４は、図３に示された加工装置のレーザー照射ユニットの構成を模式的に示す図である。FIG. 4 is a diagram schematically showing a configuration of a laser irradiation unit of the processing apparatus shown in FIG. 図５は、図４に示されたレーザー照射ユニットが照射したレーザー光線のスポット形状の一例を示すウェーハの要部の平面図である。FIG. 5 is a plan view of a main part of the wafer showing an example of the spot shape of the laser beam irradiated by the laser irradiation unit shown in FIG. 図６は、図２の分割起点形成ステップを説明する断面図である。FIG. 6 is a cross-sectional view illustrating the division starting point forming step of FIG. 図７は、図２の分割ステップを説明する断面図である。FIG. 7 is a cross-sectional view illustrating the division step of FIG. 図８は、図２の分割ステップを説明する断面図である。FIG. 8 is a cross-sectional view illustrating the division step of FIG.

本発明を実施するための形態（実施形態）につき、図面を参照しつつ詳細に説明する。以下の実施形態に記載した内容により本発明が限定されるものではない。また、以下に記載した構成要素には、当業者が容易に想定できるもの、実質的に同一のものが含まれる。さらに、以下に記載した構成は適宜組み合わせることが可能である。また、本発明の要旨を逸脱しない範囲で構成の種々の省略、置換又は変更を行うことができる。 An embodiment (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. In addition, the components described below include those that can be easily assumed by those skilled in the art and those that are substantially the same. Further, the configurations described below can be combined as appropriate. In addition, various omissions, substitutions or changes of the configuration can be made without departing from the gist of the present invention.

〔実施形態〕
本発明の実施形態に係る被加工物の加工方法を図面に基づいて説明する。まず、実施形態に係る被加工物の加工方法の加工対象を説明する。図１は、実施形態に係る被加工物の加工方法の加工対象の被加工物１０１を含む被加工物ユニット１００の斜視図である。なお、図１は、本実施形態の説明のため、実際よりも被加工物１０１及び被加工物ユニット１００に対してデバイス１０５等を大きく模式的に示しており、以降の図面についても同様である。 [Embodiment]
The processing method of the workpiece according to the embodiment of the present invention will be described with reference to the drawings. First, the processing target of the processing method of the workpiece according to the embodiment will be described. FIG. 1 is a perspective view of a work piece unit 100 including a work piece 101 to be processed in the work piece processing method according to the embodiment. Note that, for the purpose of explaining the present embodiment, FIG. 1 schematically shows the device 105 and the like with respect to the workpiece 101 and the workpiece unit 100 more than they actually are, and the same applies to the subsequent drawings. ..

実施形態に係る被加工物の加工方法の加工対象である被加工物ユニット１００は、被加工物１０１と、被加工物１０１の裏面１０７に積層された被加工物１０１とは異なる部材１０９と、を少なくとも含む。被加工物ユニット１００において、被加工物１０１と部材１０９とは、本実施形態では、径方向の大きさが互いに等しい円板状に形成されているが、本発明はこれに限定されず、いずれか一方がいずれか他方よりも大径な円板状に形成されていてもよく、角形状等の他の形状に形成されていても良い。 The work piece unit 100, which is the work target of the work work method according to the embodiment, includes a work piece 101 and a member 109 different from the work piece 101 laminated on the back surface 107 of the work piece 101. At least include. In the workpiece unit 100, the workpiece 101 and the member 109 are formed in a disk shape having the same radial size in the present embodiment, but the present invention is not limited to this, and any of them One of them may be formed in a disk shape having a diameter larger than that of the other, or may be formed in another shape such as a square shape.

被加工物１０１は、図１に示すように、本実施形態では、シリコン、サファイア、ガリウムヒ素又はＳｉＣ（炭化ケイ素）などを基板１０２とする円板状の半導体ウェーハや光デバイスウェーハである。被加工物１０１は、図１に示すように、交差（本実施形態では、直交）する複数の分割予定ライン１０４で区画された基板１０２の表面１０３の各デバイス領域にそれぞれデバイス１０５が形成されている。 As shown in FIG. 1, the workpiece 101 is a disk-shaped semiconductor wafer or an optical device wafer having silicon, sapphire, gallium arsenide, SiC (silicon carbide) or the like as a substrate 102 in the present embodiment. As shown in FIG. 1, in the workpiece 101, the device 105 is formed in each device region of the surface 103 of the substrate 102 partitioned by a plurality of intersecting (orthogonal in the present embodiment) planned division lines 104. There is.

部材１０９は、本実施形態では、被加工物１０１の裏面１０７に貼着されたＤＡＦ（Die Attach Film）、または、被加工物１０１の裏面１０７に成膜されたメタル膜であるが、本発明ではこれに限定されない。部材１０９の一例であるＤＡＦは、被加工物ユニット１００から個々に分割されたデバイス１０５を他のデバイスチップや他の基板等に固定するためのものであり、伸縮性を有する延性材である。部材１０９の他の例であるメタル膜は、例えば、デバイス１０５の電極やヒートシンク等である。 In the present embodiment, the member 109 is a DAF (Die Attach Film) attached to the back surface 107 of the workpiece 101, or a metal film formed on the back surface 107 of the workpiece 101. Then, it is not limited to this. The DAF, which is an example of the member 109, is for fixing the device 105 individually divided from the workpiece unit 100 to another device chip, another substrate, or the like, and is a ductile material having elasticity. The metal film, which is another example of the member 109, is, for example, an electrode of the device 105, a heat sink, or the like.

被加工物ユニット１００は、被加工物１０１と部材１０９とが共に各分割予定ライン１０４に沿って分割されて、個々の部材１０９付きのデバイス１０５に分割される。 In the work piece unit 100, the work piece 101 and the member 109 are both divided along each planned division line 104, and are divided into devices 105 with individual members 109.

次に、実施形態に係る被加工物の加工方法を説明する。図２は、実施形態に係る被加工物の加工方法を示すフローチャートである。図３は、図２の分割起点形成ステップＳＴ１２を実施する加工装置１０の斜視図である。図４は、図３に示された加工装置１０のレーザー照射ユニットの構成を模式的に示す図である。図５は、図４に示されたレーザー照射ユニットが照射したレーザー光線のスポット形状の一例を示すウェーハの要部の平面図である。図６は、図２の分割起点形成ステップＳＴ１２を説明する断面図である。図７及び図８は、図２の分割ステップＳＴ１４を説明する断面図である。実施形態に係る被加工物の加工方法は、図２に示すように、保持ステップＳＴ１１と、分割起点形成ステップＳＴ１２と、貼着ステップＳＴ１３と、分割ステップＳＴ１４と、を備える。 Next, a method for processing the workpiece according to the embodiment will be described. FIG. 2 is a flowchart showing a processing method of the workpiece according to the embodiment. FIG. 3 is a perspective view of the processing apparatus 10 for carrying out the division starting point forming step ST12 of FIG. FIG. 4 is a diagram schematically showing the configuration of the laser irradiation unit of the processing apparatus 10 shown in FIG. FIG. 5 is a plan view of a main part of the wafer showing an example of the spot shape of the laser beam irradiated by the laser irradiation unit shown in FIG. FIG. 6 is a cross-sectional view illustrating the division starting point forming step ST12 of FIG. 7 and 8 are cross-sectional views illustrating the division step ST14 of FIG. As shown in FIG. 2, the method for processing the workpiece according to the embodiment includes a holding step ST11, a division starting point forming step ST12, a sticking step ST13, and a division step ST14.

実施形態に係る被加工物の加工方法において、保持ステップＳＴ１１と、分割起点形成ステップＳＴ１２とは、図３に示す加工装置１０により実施される。加工装置１０は、図３に示すように、保持面１２で被加工物ユニット１００（被加工物１０１及び部材１０９）を保持する保持テーブル１１と、保持テーブル１１に保持された被加工物ユニット１００（被加工物１０１及び部材１０９）に向けてレーザー光線１５（図６参照）を照射するレーザー照射ユニット１４と、保持テーブル１１を水平内の一方向であるＸ軸方向に移動させるＸ軸移動ユニット１７と、保持テーブル１１を水平内の別の一方向であるＹ軸方向に移動させるＹ軸移動ユニット１８と、保持テーブル１１に保持された被加工物ユニット１００（被加工物１０１及び部材１０９）を撮像する撮像ユニット１９と、各部及び各ユニットを制御する不図示の制御ユニットと、を備える。 In the processing method of the workpiece according to the embodiment, the holding step ST11 and the division starting point forming step ST12 are carried out by the processing apparatus 10 shown in FIG. As shown in FIG. 3, the processing apparatus 10 has a holding table 11 that holds the workpiece unit 100 (workpiece 101 and member 109) on the holding surface 12, and a workpiece unit 100 that is held by the holding table 11. The laser irradiation unit 14 that irradiates the laser beam 15 (see FIG. 6) toward (workpiece 101 and member 109) and the X-axis moving unit 17 that moves the holding table 11 in the X-axis direction, which is one horizontal direction. A Y-axis moving unit 18 that moves the holding table 11 in the Y-axis direction, which is another horizontal direction, and a workpiece unit 100 (workpiece 101 and member 109) held by the holding table 11. An imaging unit 19 for imaging and a control unit (not shown) for controlling each unit and each unit are provided.

レーザー照射ユニット１４は、図４に示すように、被加工物１０１の基板１０２に対して透過性を有する波長のレーザー光線１５を発振するレーザー発振器１４４と、レーザー発振器１４４から出射されたレーザー光線１５を保持テーブル１１の保持面１２に保持した被加工物１０１に向けて反射するミラー１４５と、レーザー光線１５を被加工物１０１の内部に集光する集光レンズ１４９と、レーザー光線１５の集光点１６をＸ軸方向とＹ軸方向との双方に直交するＺ軸方向に移動する図示しない集光点位置調整手段と、レーザー光線１５の被加工物１０１の表面１０３におけるスポット形状１５１を楕円形に成形する楕円スポット整形手段１４６とを備える。 As shown in FIG. 4, the laser irradiation unit 14 holds a laser oscillator 144 that oscillates a laser beam 15 having a wavelength that is transparent to the substrate 102 of the workpiece 101, and a laser beam 15 emitted from the laser oscillator 144. The mirror 145 that reflects toward the workpiece 101 held on the holding surface 12 of the table 11, the condensing lens 149 that condenses the laser beam 15 inside the workpiece 101, and the condensing point 16 of the laser beam 15 are X. Condensing point position adjusting means (not shown) that moves in the Z-axis direction orthogonal to both the axial direction and the Y-axis direction, and an elliptical spot that shapes the spot shape 151 on the surface 103 of the workpiece 101 of the laser beam 15 into an elliptical shape. It is provided with shaping means 146.

実施形態１では、楕円スポット整形手段１４６は、ミラー１４５と集光レンズ１４９との間に配置され、平凹シリンドリカルレンズ１４７と平凸シリンドリカルレンズ１４８とから構成される。レーザー光線１５は、平凹シリンドリカルレンズ１４７で線状に集光されてから平凸シリンドリカルレンズ１４８で楕円形状のスポット形状１５１を有するコリメートビーム（平行光線）に変換される。 In the first embodiment, the elliptical spot shaping means 146 is arranged between the mirror 145 and the condenser lens 149, and is composed of a plano-concave cylindrical lens 147 and a plano-convex cylindrical lens 148. The laser beam 15 is linearly focused by the plano-concave cylindrical lens 147 and then converted into a collimated beam (parallel light beam) having an elliptical spot shape 151 by the plano-convex cylindrical lens 148.

実施形態１では、楕円スポット整形手段１４６は、レーザー光線１５の被加工物１０１の表面１０３における楕円形のスポット形状１５１の長軸を、図５に示すように、被加工物１０１の加工送り方向であるＸ軸方向と平行に位置付ける。 In the first embodiment, the elliptical spot shaping means 146 rotates the long axis of the elliptical spot shape 151 on the surface 103 of the workpiece 101 of the laser beam 15 in the machining feed direction of the workpiece 101 as shown in FIG. Positioned parallel to a certain X-axis direction.

保持ステップＳＴ１１は、被加工物１０１の裏面１０７側、すなわち、被加工物ユニット１００の部材１０９側を、図３に示す加工装置１０の保持テーブル１１に保持させるステップである。 The holding step ST11 is a step of holding the back surface 107 side of the workpiece 101, that is, the member 109 side of the workpiece unit 100, on the holding table 11 of the processing apparatus 10 shown in FIG.

保持ステップＳＴ１１では、具体的には、本実施形態では、まず、図６に示すように、保持テーブル１１で保持される側である被加工物ユニット１００の部材１０９側に、部材１０９側を保護し、被加工物ユニット１００（被加工物１０１及び部材１０９）より径の大きい保護テープ１１１を貼着し、さらに、保護テープ１１１の外周に環状のフレーム１１２を貼着する。保持ステップＳＴ１１では、次に、図６に示すように、保護テープ１１１を介して、被加工物ユニット１００の部材１０９側を、保持テーブル１１の保持面１２で吸引保持させる。なお、加工装置１０の保持テーブル１１は、不図示の真空源が接続されており、保持面１２で吸引保持することができる。 In the holding step ST11, specifically, in the present embodiment, first, as shown in FIG. 6, the member 109 side is protected on the member 109 side of the workpiece unit 100 which is the side held by the holding table 11. Then, a protective tape 111 having a diameter larger than that of the workpiece unit 100 (workpiece 101 and member 109) is attached, and further, an annular frame 112 is attached to the outer periphery of the protective tape 111. Next, in the holding step ST11, as shown in FIG. 6, the member 109 side of the workpiece unit 100 is sucked and held by the holding surface 12 of the holding table 11 via the protective tape 111. A vacuum source (not shown) is connected to the holding table 11 of the processing apparatus 10, and the holding table 12 can be sucked and held.

分割起点形成ステップＳＴ１２は、保持ステップＳＴ１１の実施後に、図６に示すように、被加工物１０１の表面１０３側から、被加工物１０１に対して透過性を有する波長のレーザー光線１５を被加工物１０１の内部に集光点１６を合わせた状態で照射し、被加工物１０１の内部に改質層１２１を形成するとともに、集光点１６から裏面１０７側に漏れたレーザー光線１５によって部材１０９に分割起点１２９を形成するステップである。 In the division starting point forming step ST12, after the holding step ST11 is performed, as shown in FIG. 6, a laser beam 15 having a wavelength that is transparent to the workpiece 101 is emitted from the surface 103 side of the workpiece 101 to the workpiece 101. Irradiation is performed with the condensing point 16 aligned with the inside of the 101 to form a modified layer 121 inside the workpiece 101, and the member 109 is divided by a laser beam 15 leaking from the condensing point 16 to the back surface 107 side. This is a step of forming the starting point 129.

分割起点形成ステップＳＴ１２では、具体的には、まず、レーザー光線１５の照射の前に、撮像ユニット１９により被加工物ユニット１００（被加工物１０１及び部材１０９）を撮像して、被加工物ユニット１００（被加工物１０１及び部材１０９）とレーザー照射ユニット１４との位置合わせを行うアライメントを遂行する。 Specifically, in the division starting point forming step ST12, first, before the irradiation of the laser beam 15, the work piece unit 100 (work piece 101 and member 109) is imaged by the image pickup unit 19, and the work piece unit 100 is taken. Alignment is performed to align (workpiece 101 and member 109) with the laser irradiation unit 14.

分割起点形成ステップＳＴ１２では、次に、被加工物１０１に対して透過性を有する波長のレーザー光線１５の集光点１６を被加工物１０１の内部に合わせる。分割起点形成ステップＳＴ１２では、そして、被加工物１０１の内部にレーザー光線１５の集光点１６を合わせた状態で、レーザー照射ユニット１４によりレーザー光線１５を照射しながら、Ｘ軸移動ユニット１７またはＹ軸移動ユニット１８により被加工物ユニット１００（被加工物１０１及び部材１０９）を保持する保持テーブル１１側を移動させることで、レーザー光線１５を分割予定ライン１０４に沿って照射する。 In the division starting point forming step ST12, next, the focusing point 16 of the laser beam 15 having a wavelength that is transparent to the workpiece 101 is aligned with the inside of the workpiece 101. In the division starting point forming step ST12, the X-axis moving unit 17 or the Y-axis moving while irradiating the laser beam 15 with the laser irradiation unit 14 in a state where the focusing point 16 of the laser beam 15 is aligned with the inside of the workpiece 101. The laser beam 15 is irradiated along the scheduled division line 104 by moving the holding table 11 side that holds the workpiece unit 100 (workpiece 101 and member 109) by the unit 18.

これにより、分割起点形成ステップＳＴ１２では、集光点１６が合わせられた位置を中心に、被加工物１０１の内部に分割予定ライン１０４に沿って改質層１２１のラインを形成するとともに、集光点１６から裏面１０７側に漏れたレーザー光線１５によって、改質層１２１に対して厚み方向に対向する部材１０９の内部の位置を中心に、部材１０９の内部に分割予定ライン１０４に沿って分割起点１２９のラインを形成する。 As a result, in the division starting point forming step ST12, a line of the modified layer 121 is formed inside the workpiece 101 along the planned division line 104, centering on the position where the light collecting points 16 are aligned, and the light is collected. Due to the laser beam 15 leaking from the point 16 to the back surface 107 side, the division starting point 129 is formed inside the member 109 along the planned division line 104, centering on the internal position of the member 109 facing the modified layer 121 in the thickness direction. Form a line of.

図６では、−Ｙ方向側から順に、Ｘ軸方向に沿う６本の分割予定ライン１０４に沿って、被加工物ユニット１００の被加工物１０１及び部材１０９のそれぞれ内部に、改質層１２１及び分割起点１２９のそれぞれのラインが形成された状態を示している。分割起点形成ステップＳＴ１２では、最終的に、全ての分割予定ライン１０４に沿って、被加工物１０１及び部材１０９のそれぞれの内部に改質層１２１及び分割起点１２９のそれぞれのラインを形成する。 In FIG. 6, in order from the −Y direction side, the modified layer 121 and the modified layer 121 are inside the workpiece 101 and the member 109 of the workpiece unit 100 along the six planned division lines 104 along the X-axis direction. It shows a state in which each line of the division starting point 129 is formed. In the division starting point forming step ST12, finally, each line of the modified layer 121 and the dividing starting point 129 is formed inside each of the workpiece 101 and the member 109 along all the planned division lines 104.

分割起点形成ステップＳＴ１２では、本実施形態では、さらに、全ての分割予定ライン１０４について、被加工物１０１の内部の第１の所定深さ、及び第２の所定深さにレーザー光線１５の集光点１６を位置付けて、合計２回、レーザー光線１５を照射させることにより、被加工物１０１の内部に改質層１２１を形成するとともに、２回のうち集光点１６を被加工物１０１の内部の最深の所定深さに位置付ける際に、集光点１６から裏面１０７側に漏れたレーザー光線１５により、分割起点１２９を形成する。なお、分割起点形成ステップＳＴ１２におけるレーザー光線１５の照射回数は、上記した様態の２回に限定されず、被加工物１０１の厚み及びレーザー光線１５の照射条件等に応じて、適宜変更することができる。 In the division starting point forming step ST12, in the present embodiment, the focusing points of the laser beam 15 are further set at the first predetermined depth inside the workpiece 101 and the second predetermined depth for all the planned division lines 104. By positioning 16 and irradiating the laser beam 15 twice in total, the modified layer 121 is formed inside the workpiece 101, and the condensing point 16 is the deepest inside the workpiece 101 out of the two times. The division starting point 129 is formed by the laser beam 15 leaking from the condensing point 16 to the back surface 107 side at the time of positioning at a predetermined depth. The number of times the laser beam 15 is irradiated in the division starting point forming step ST12 is not limited to the above-mentioned two times, and can be appropriately changed depending on the thickness of the workpiece 101, the irradiation conditions of the laser beam 15, and the like.

ここで、分割起点形成ステップＳＴ１２では、レーザー光線１５の集光点１６が合わせられた位置の裏面１０７からの被加工物１０１の厚さ方向の距離１３１を、極力短く、即ち集光点１６が部材１０９のより近いことが望ましい。即ち、距離１３１は、集光点１６で集光したレーザー光線１５の漏れ光がその熱により部材１０９を溶かして変質させて、部材１０９の内部の分割予定ライン１０４の直下に分割起点１２９を形成できる距離である。 Here, in the division starting point forming step ST12, the distance 131 in the thickness direction of the workpiece 101 from the back surface 107 at the position where the focusing point 16 of the laser beam 15 is aligned is made as short as possible, that is, the focusing point 16 is a member. It is desirable that it is closer to 109. That is, at the distance 131, the leakage light of the laser beam 15 focused at the condensing point 16 melts and alters the member 109 by the heat, and the division starting point 129 can be formed directly below the planned division line 104 inside the member 109. The distance.

実施形態に係る被加工物の加工方法では、分割起点形成ステップＳＴ１２の実施を終了すると、保持ステップＳＴ１１で被加工物ユニット１００（被加工物１０１及び部材１０９）に装着した保護テープ１１１及びフレーム１１２を取り外す。 In the processing method of the workpiece according to the embodiment, when the execution of the division starting point forming step ST12 is completed, the protective tape 111 and the frame 112 attached to the workpiece unit 100 (workpiece 101 and member 109) in the holding step ST11 are completed. Remove.

貼着ステップＳＴ１３は、図７に示すように、分割起点形成ステップＳＴ１２の実施後に、被加工物１０１の表面１０３側を、エキスパンドテープ１４１に貼着するステップである。 As shown in FIG. 7, the sticking step ST13 is a step of sticking the surface 103 side of the workpiece 101 to the expanding tape 141 after the division starting point forming step ST12 is performed.

貼着ステップＳＴ１３では、具体的には、本実施形態では、まず、図７に示すように、
被加工物１０１の表面１０３側に、被加工物ユニット１００（被加工物１０１及び部材１０９）より径の大きく伸縮性を有するエキスパンドテープ１４１の粘着層側を貼着し、エキスパンドテープ１４１の粘着層側の外周に環状のフレーム１４２を貼着する。 In the sticking step ST13, specifically, in the present embodiment, first, as shown in FIG. 7,
The adhesive layer side of the expanding tape 141 having a diameter larger than that of the workpiece unit 100 (workpiece 101 and member 109) and having elasticity is attached to the surface 103 side of the workpiece 101, and the adhesive layer of the expanding tape 141 is attached. An annular frame 142 is attached to the outer periphery of the side.

実施形態に係る被加工物の加工方法において、分割ステップＳＴ１４は、図７及び図８に示す分割装置２０により実施される。分割装置２０は、図７及び図８に示すように、エキスパンドテープ１４１の外周部分が貼着されたフレーム１４２を固定するフレーム固定ユニット２１と、エキスパンドテープ１４１を拡張するテープ拡張ユニット２２と、各ユニットを制御する不図示の制御ユニットと、を備える。フレーム固定ユニット２１及びテープ拡張ユニット２２は、平面形状が概ね同軸の円形に形成されている。テープ拡張ユニット２２は、フレーム固定ユニット２１に対して径方向の内側に、フレーム固定ユニット２１に形成された開口内に設けられている。 In the method of processing the workpiece according to the embodiment, the division step ST14 is carried out by the division device 20 shown in FIGS. 7 and 8. As shown in FIGS. 7 and 8, the dividing device 20 includes a frame fixing unit 21 for fixing the frame 142 to which the outer peripheral portion of the expanding tape 141 is attached, and a tape expanding unit 22 for expanding the expanding tape 141. A control unit (not shown) for controlling the unit is provided. The frame fixing unit 21 and the tape expansion unit 22 are formed in a circular shape having a substantially coaxial planar shape. The tape expansion unit 22 is provided inside the frame fixing unit 21 in the radial direction in the opening formed in the frame fixing unit 21.

分割ステップＳＴ１４は、図７及び図８に示すように、エキスパンドテープ１４１を拡張して、改質層１２１及び分割起点１２９に沿って被加工物１０１及び部材１０９を分割することで、被加工物ユニット１００を一度に分割するステップである。 In the dividing step ST14, as shown in FIGS. 7 and 8, the expanding tape 141 is expanded to divide the workpiece 101 and the member 109 along the modified layer 121 and the division starting point 129, thereby dividing the workpiece 101 and the member 109. This is a step of dividing the unit 100 at a time.

分割ステップＳＴ１４では、まず、図７に示すように、フレーム固定ユニット２１により、フレーム１４２を全周にわたって外周側から挟持することにより、フレーム１４２を固定する。分割ステップＳＴ１４では、次に、図８に示すように、テープ拡張ユニット２２をフレーム固定ユニット２１に対して鉛直方向に沿う軸心に沿って上方に向けて相対的に移動させることで、エキスパンドテープ１４１のフレーム１４２の内周縁と被加工物ユニット１００の外周縁との間の環状領域１４３を被加工物１０１の表面１０３と直交する方向に押圧してエキスパンドテープ１４１を拡張する。 In the division step ST14, first, as shown in FIG. 7, the frame 142 is fixed by the frame fixing unit 21 by sandwiching the frame 142 from the outer peripheral side over the entire circumference. Next, in the dividing step ST14, as shown in FIG. 8, the tape expanding unit 22 is relatively moved upward along the axis along the vertical direction with respect to the frame fixing unit 21, thereby expanding the tape. The expanding tape 141 is expanded by pressing the annular region 143 between the inner peripheral edge of the frame 142 of 141 and the outer peripheral edge of the workpiece unit 100 in a direction orthogonal to the surface 103 of the workpiece 101.

これにより、分割ステップＳＴ１４では、エキスパンドテープ１４１の拡張により改質層１２１及び分割起点１２９に、同時にかつ同程度に、エキスパンドテープ１４１の延びる方向に沿う離間方向の外力を付与して、分割予定ライン１０４に沿って形成された分割の起点である改質層１２１及び分割起点１２９から被加工物１０１及び部材１０９をそれぞれ一度に破断する。この結果、分割ステップＳＴ１４では、被加工物ユニット１００の被加工物１０１及び部材１０９が各分割予定ライン１０４に沿って分割されて、個々に分割された部材１０９付きのデバイス１０５が得られる。 As a result, in the dividing step ST14, an external force in the separation direction along the extending direction of the expanding tape 141 is applied to the modified layer 121 and the dividing starting point 129 by expanding the expanding tape 141 at the same time and to the same extent, and the planned dividing line is applied. The workpiece 101 and the member 109 are broken at once from the modified layer 121 and the division starting point 129, which are the starting points of the division formed along the 104. As a result, in the division step ST14, the workpiece 101 and the member 109 of the workpiece unit 100 are divided along the respective division schedule lines 104, and the device 105 with the individually divided member 109 is obtained.

このように、実施形態に係る被加工物の加工方法を経て、被加工物１０１及び部材１０９を含む被加工物ユニット１００から、個々に分割された部材１０９付きのデバイス１０５が得られる。 In this way, the device 105 with the individually divided member 109 is obtained from the workpiece unit 100 including the workpiece 101 and the member 109 through the process of processing the workpiece according to the embodiment.

実施形態に係る被加工物の加工方法は、分割起点形成ステップＳＴ１２で、スポット形状１５１を長軸がＸ軸方向と平行な楕円形に形成して、被加工物１０１の表面１０３側から、被加工物１０１に対して透過性を有する波長のレーザー光線１５を被加工物１０１の内部に集光点１６を合わせた状態で照射することで、被加工物１０１の内部に改質層１２１を形成するとともに、集光点１６から裏面１０７側に漏れたレーザー光線１５によって部材１０９に分割起点１２９を形成する。このため、実施形態に係る被加工物の加工方法は、改質層１２１及び分割起点１２９に同時に離間方向の外力を付与することで、材質の異なる層である被加工物１０１及び部材１０９を一度に分割することができるという作用効果を奏する。すなわち、実施形態に係る被加工物の加工方法は、ことができるという作用効果を奏する。裏面１０７に材質の異なる部材１０９が積層された被加工物１０１を効率よく分割することができるという作用効果を奏する。 The method for processing the workpiece according to the embodiment is to form the spot shape 151 into an elliptical shape whose major axis is parallel to the X-axis direction in the division starting point forming step ST12, and to be workpieces from the surface 103 side of the workpiece 101. A modified layer 121 is formed inside the work piece 101 by irradiating the work piece 101 with a laser beam 15 having a wavelength that is transparent to the work piece 101 with the condensing point 16 aligned inside the work piece 101. At the same time, the division starting point 129 is formed in the member 109 by the laser beam 15 leaking from the condensing point 16 to the back surface 107 side. Therefore, in the processing method of the workpiece according to the embodiment, the modified layer 121 and the division starting point 129 are simultaneously applied with an external force in the separation direction, so that the workpiece 101 and the member 109, which are layers of different materials, are once processed. It has the effect of being able to be divided into. That is, the method for processing the workpiece according to the embodiment has the effect of being able to do so. The work piece 101 in which members 109 made of different materials are laminated on the back surface 107 can be efficiently divided.

また、実施形態に係る被加工物の加工方法は、スポット形状１５１を長軸がＸ軸方向と平行な楕円形に形成し、前述した距離１３１となる位置に集光点１６を設定して、レーザー光線１５を照射する。スポット形状が真円状の場合、集光点から漏れる光は分割予定ライン１０４の下方で分割予定ライン１０４の外側の位置に照射されてしまう恐れがある。これに対して、本実施形態の被加工物の加工方法は、スポット形状が楕円状であるのでＸ方向と直交するＹ方向への広がりを小さくすることができ、集光点１６から漏れるレーザー光が分割予定ライン１０４の下方で、分割予定ライン１０４より外側ではなく分割予定ライン１０４の幅内、すなわち直下に収まって照射されやすくなる。また、一度の分割予定ライン１０４に沿ったレーザー光線１５の照射により、改質層１２１及び分割起点１２９を同時に形成することができるので、従来のように２回に分けて加工するよりも改質層１２１を起点とした分割ラインと分割起点１２９を起点とした分割ラインとのずれが小さくなる。このため、実施形態に係る被加工物の加工方法は、従来のように被加工物１０１と部材１０９とを別々に分割した場合に発生するおそれのあった被加工物１０１の分割ラインと部材１０９の分割ラインとの間に生じるラインずれの現象を大幅に抑制することができるという作用効果を奏する。 Further, in the processing method of the workpiece according to the embodiment, the spot shape 151 is formed into an elliptical shape whose long axis is parallel to the X-axis direction, and the condensing point 16 is set at the position where the distance 131 is described above. Irradiate the laser beam 15. When the spot shape is a perfect circle, the light leaking from the condensing point may be irradiated to a position below the planned division line 104 and outside the planned division line 104. On the other hand, in the processing method of the workpiece of the present embodiment, since the spot shape is elliptical, the spread in the Y direction orthogonal to the X direction can be reduced, and the laser light leaking from the focusing point 16 can be reduced. Is located below the planned division line 104, not outside the planned division line 104, but within the width of the planned division line 104, that is, directly below the planned division line 104, and is easily irradiated. Further, since the modified layer 121 and the division starting point 129 can be formed at the same time by irradiating the laser beam 15 along the scheduled division line 104 once, the modified layer is processed rather than being processed in two times as in the conventional case. The deviation between the dividing line starting from 121 and the dividing line starting from the dividing starting point 129 becomes small. Therefore, the method for processing the workpiece 101 according to the embodiment is a method of processing the workpiece 101, which may occur when the workpiece 101 and the member 109 are separately divided as in the conventional case. It has the effect of being able to significantly suppress the phenomenon of line deviation that occurs between the two dividing lines.

実施形態に係る被加工物の加工方法は、分割起点形成ステップＳＴ１２の実施後に、被加工物１０１の表面１０３側をエキスパンドテープ１４１に貼着する貼着ステップＳＴ１３と、エキスパンドテープ１４１を拡張して、改質層１２１及び分割起点１２９に沿って被加工物１０１及び部材１０９を分割する分割ステップＳＴ１４と、を備える。このため、実施形態に係る被加工物の加工方法は、エキスパンドテープ１４１を使用して改質層１２１及び分割起点１２９に同時に離間方向の外力を付与することで、好適に、材質の異なる層である被加工物１０１及び部材１０９を一度に分割することができるという作用効果を奏する。 The method for processing the workpiece according to the embodiment is the attachment step ST13 in which the surface 103 side of the workpiece 101 is attached to the expanding tape 141 after the division starting point forming step ST12 is performed, and the expanding tape 141 is expanded. The modified layer 121 and the division step ST14 for dividing the workpiece 101 and the member 109 along the division start point 129 are provided. Therefore, in the method for processing the workpiece according to the embodiment, an expanding tape 141 is used to simultaneously apply an external force in the separation direction to the modified layer 121 and the division starting point 129, thereby preferably using layers of different materials. It has the effect of being able to divide a work piece 101 and a member 109 at once.

実施形態に係る被加工物の加工方法は、部材１０９は、ＤＡＦまたはメタル膜が使用されている。このため、実施形態に係る被加工物の加工方法は、従来では被加工物１０１の分割工程とは別の分割工程が必要であったＤＡＦまたはメタル膜が被加工物１０１に積層されている場合でも、一度で効率よく分割することができるという作用効果を奏する。 In the processing method of the workpiece according to the embodiment, DAF or a metal film is used for the member 109. Therefore, the processing method of the workpiece according to the embodiment is a case where a DAF or a metal film, which conventionally required a division step different from the division step of the workpiece 101, is laminated on the workpiece 101. However, it has the effect of being able to divide efficiently at once.

なお、本発明は、上記実施形態に限定されるものではない。即ち、本発明の骨子を逸脱しない範囲で種々変形して実施することができる。 The present invention is not limited to the above embodiment. That is, it can be modified in various ways without departing from the gist of the present invention.

１０ 加工装置
１１ 保持テーブル
１２ 保持面
１４ レーザー照射ユニット
１５ レーザー光線
１６ 集光点
２０ 分割装置
２１ フレーム固定ユニット
２２ テープ拡張ユニット
１００ 被加工物ユニット
１０１ 被加工物
１０２ 基板
１０３ 表面
１０４ 分割予定ライン
１０５ デバイス
１０７ 裏面
１０９ 部材
１２１ 改質層
１２９ 分割起点
１３１ 距離
１３９ 厚さ
１４１ エキスパンドテープ
１４２ フレーム
１４３ 環状領域 10 Processing equipment 11 Holding table 12 Holding surface 14 Laser irradiation unit 15 Laser beam 16 Condensing point 20 Dividing device 21 Frame fixing unit 22 Tape expansion unit 100 Work piece unit 101 Work piece 102 Substrate 103 Surface 104 Scheduled division line 105 Device 107 Back side 109 Member 121 Modified layer 129 Dividing starting point 131 Distance 139 Thickness 141 Expanding tape 142 Frame 143 Circular region

Claims (3)

被加工物の加工方法であって、
被加工物の裏面には被加工物とは材質の異なる部材が積層され、
被加工物の裏面側を保持テーブルに保持する保持ステップと、
該保持ステップの実施後に、被加工物の表面側から、被加工物に対して透過性を有する波長のレーザー光線を被加工物の内部に集光点を合わせた状態で照射し、被加工物の内部に改質層を形成するとともに、該集光点から裏面側に漏れたレーザー光線によって該部材に分割起点を形成する分割起点形成ステップと、
を備えることを特徴とする、被加工物の加工方法。 It is a processing method of the work piece
Members made of different materials from the work piece are laminated on the back surface of the work piece.
A holding step that holds the back side of the work piece on the holding table,
After carrying out the holding step, a laser beam having a wavelength that is transparent to the work piece is irradiated from the surface side of the work piece in a state where the condensing point is aligned with the inside of the work piece. A division starting point forming step in which a modified layer is formed inside and a division starting point is formed in the member by a laser beam leaking from the condensing point to the back surface side.
A method for processing a work piece, which comprises. 該分割起点形成ステップの実施後に、被加工物の表面側をエキスパンドテープに貼着する貼着ステップと、
該エキスパンドテープを拡張して、該分割起点に沿って被加工物及び該部材を分割する分割ステップと、
を備える事を特徴とする請求項１に記載の被加工物の加工方法。 After performing the division starting point forming step, a sticking step of sticking the surface side of the work piece to the expanding tape and a sticking step.
A division step of expanding the expanding tape to divide the workpiece and the member along the division starting point, and
The method for processing an workpiece according to claim 1, further comprising. 該部材は、ＤＡＦまたはメタル膜であることを特徴とする、請求項１または請求項２に記載の被加工物の加工方法。 The method for processing a workpiece according to claim 1 or 2, wherein the member is a DAF or a metal film.
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