JP2014138113A - Wafer processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wafer processing method capable of dividing even a wafer with a small device chip size into device chips without causing a division failure.SOLUTION: A first modified layer forming step comprises: a group region processing step; and a group setting step. The group region processing step processes one first division schedule line S1 by setting two adjacent devices 15 aligned along the first division schedule line S1 as a group G, continuously irradiating a wafer with a laser beam along a region corresponding to the group G, and repeatedly irradiating the wafer again with a laser beam along a region next to the group G beyond an intersection portion between the first division schedule line and a second division schedule line S2. The group setting step sets two devices 15 as one group by sliding the wafer by the group G set in the group region processing step and one device chip 15 in the first division schedule line S1 adjacent to the first division schedule line S1 having been subjected to the group region processing step.

Description

  The present invention relates to a wafer processing method, and more particularly to a wafer processing method for dividing a wafer into individual device chips.

  A wafer such as a silicon wafer or a sapphire wafer formed on the surface by dividing a plurality of devices such as IC, LSI, LED, etc. by dividing lines is divided into individual devices by a processing apparatus, and the divided devices are mobile phones, Widely used in various electronic devices such as personal computers.

  A dicing method using a cutting device called a dicer is widely used for dividing the wafer. In the dicing method, a wafer is cut by cutting a wafer into a wafer while rotating a cutting blade having a thickness of about 30 μm by solidifying abrasive grains such as diamond with a metal or a resin at a high speed of about 30000 rpm. Divide into chips.

  On the other hand, in recent years, a method of dividing a wafer into individual device chips using a laser beam has been developed and put into practical use. As methods for dividing a wafer into individual device chips using a laser beam, first and second processing methods described below are known.

  In the first processing method, a condensing point of a laser beam having a wavelength transparent to the wafer (for example, 1064 nm) is positioned inside the wafer corresponding to the division line, and the laser beam is aligned along the division line. This is a method in which a modified layer is formed inside the wafer by irradiation, and then an external force is applied to the wafer by a dividing device to divide the wafer into individual device chips using the modified layer as a starting point (for example, Japanese Patent No. 3408805). reference).

  In the second processing method, a processing groove is formed by ablation processing by irradiating a condensing point of a laser beam having a wavelength (for example, 355 nm) having an absorptivity with respect to a wafer to an area corresponding to a division-scheduled line. Is used to divide the wafer into individual device chips with the processing groove as a starting point (see, for example, JP-A-10-305420).

  The processing method using a laser beam can increase the processing speed as compared with a dicing method using a dicer, and can relatively easily process even a wafer made of a material having high hardness such as sapphire or SiC. .

  In addition, since the modified layer or the processed groove can be made to have a narrow width of, for example, 10 μm or less, there is an advantage that the amount of devices taken per wafer can be increased as compared with the case of processing by the dicing method. ing.

  However, in a processing method in which a modified layer is formed inside the wafer and the wafer is divided into individual device chips from the modified layer as a starting point, the division lines are likely to meander and be divided.

  As a result, the wafer irradiates the laser beam to the part where the modified layer has already been formed in the vicinity where the planned dividing lines intersect, so that the workability is impaired, such as the modified layer being distorted or not sufficiently formed. There is a problem that the division failure is likely to occur. In order to solve this problem, Japanese Patent No. 4776711 proposes a processing method for irradiating a laser beam excluding a portion where the planned dividing lines intersect.

Japanese Patent No. 3408805 JP-A-10-305420 Japanese Patent No. 4776711

  However, in the conventional processing method in which the laser beam is irradiated except for the portion where the planned dividing lines intersect, the proportion of the unprocessed portion increases as the chip size decreases, and the crack extending from the modified layer extends to the vicinity of the intersection. Since this is insufficient, there is a problem that a portion that cannot be divided is created.

  The present invention has been made in view of the above points, and an object of the present invention is to provide a wafer processing method that can divide a wafer into device chips without causing a division failure even with a wafer having a small device chip size. Is to provide.

  According to the present invention, a device is formed in each region defined by a plurality of first division planned lines extending in the first direction and a plurality of second division planned lines formed intersecting the first division planned lines. This is a wafer processing method for processing a processed wafer, and a laser beam is irradiated along the first division line while a condensing point of a laser beam having a wavelength that is transparent to the wafer is positioned inside the wafer. Then, after performing the first modified layer forming step for forming the first modified layer inside the wafer, and the first modified layer forming step, a laser beam having a wavelength that is transparent to the wafer. A second modified layer forming step of forming a second modified layer inside the wafer by irradiating a laser beam along the second division line while positioning the condensing point inside the wafer; A dividing step of applying an external force to the wafer on which the first and second modified layers are formed and dividing the wafer into individual device chips along the first and second scheduled dividing lines, In the first modified layer forming step, two adjacent devices arranged along the first division line are grouped, and the laser beam is continuously irradiated along the region corresponding to the first group, Repeatedly irradiates the laser beam along the area corresponding to the second group adjacent to the first group beyond the intersection with the second divided line, and processes one first planned line. The group area processing step, and the first division line adjacent to the first division line on which the group area processing step has been performed, and the group area processing step. And a group setting step for setting the two devices as a group by shifting the group by one device chip, and alternately repeating the group region processing step and the group setting step, A wafer processing method characterized by processing all the lines is provided.

  Preferably, in the second modified layer forming step, when the laser beam is irradiated along the second scheduled division line, the second modified layer forming step already includes the first scheduled division line that intersects the second scheduled division line. The laser beam is irradiated except for the region where the first modified layer is formed.

  According to the processing method of the present invention, in one device chip, the modified layer does not intersect the modified layer along the other divided line in either direction along the first and second divided lines. Since there is a crossing portion in which a modified layer having good processability is formed, it is possible to form a reformed layer having good workability at all the crossing portions and in both the first and second division planned lines, thereby preventing wafer division failure. be able to.

It is a surface side perspective view of a semiconductor wafer. It is a disassembled perspective view which shows a mode that the surface side of a semiconductor wafer is stuck to the dicing tape with which the outer peripheral part was stuck to the cyclic | annular flame | frame. It is a block diagram of a laser beam irradiation unit. It is a perspective view which shows a 1st modified layer formation step. It is sectional drawing which shows a 1st modified layer formation step. It is explanatory drawing of the wafer in which the 1st modified layer formation step was implemented. It is sectional drawing which shows the 2nd modified layer formation step of 1st Embodiment. It is explanatory drawing of the wafer in which the 1st modified layer formation step and the 2nd modified layer formation step of 1st Embodiment were implemented. It is sectional drawing which shows the 2nd modified layer formation step of 2nd Embodiment. It is explanatory drawing of the wafer in which the 1st modified layer formation step and the 2nd modified layer formation step of 2nd Embodiment were implemented. It is a perspective view of a dividing device. It is sectional drawing which shows a division | segmentation step.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, there is shown a front side perspective view of a semiconductor wafer (hereinafter sometimes simply referred to as a wafer) 11 which is a kind of workpiece to be processed by the processing method of the present invention.

  On the front surface 11a of the wafer 11, a plurality of first division planned lines (streets) S1 and a plurality of second division planned lines (second streets) S2 are formed orthogonal to each other. A device 15 such as an IC or an LSI is formed in each region partitioned by the second scheduled division line S2.

  In carrying out the processing method of the present invention, as shown in FIG. 2, the surface 11 a of the wafer 11 is attached to a dicing tape T, which is an adhesive tape having an outer peripheral portion attached to the annular frame F. The back surface 11b is exposed to the front surface.

  Referring to FIG. 3, a block diagram of a laser beam irradiation unit 10 of a laser processing apparatus suitable for carrying out the processing method of the present invention is shown. The laser beam irradiation unit 10 includes a laser beam generation unit 12 and a condenser 14.

  The laser beam generation unit 12 includes a laser oscillator 16 that oscillates a YAG laser or a YVO4 laser, a repetition frequency setting unit 18, a pulse width adjustment unit 20, and a power adjustment unit 22.

  The pulsed laser beam adjusted to a predetermined power by the power adjusting means 22 of the laser beam generating unit 12 is reflected by the mirror 24 of the condenser 14 and further condensed by the condenser objective lens 26 and held on the chuck table 28. The irradiated wafer 11 is irradiated.

  Next, with reference to FIG. 4 thru | or FIG. 12, the processing method of the wafer 11 which concerns on embodiment of this invention is demonstrated in detail. First, the first modified layer forming step will be described with reference to FIGS. 4 and 5. FIG. 4 is a perspective view showing the first modified layer forming step, and FIG. 5 is a sectional view thereof.

  In the first modified layer forming step, a condensing point of a laser beam having a wavelength (for example, 1064 nm) having transparency with respect to the wafer 11 is positioned inside the wafer 11 corresponding to the first division line S1, and a chuck table is formed. The modified layer 17 is formed inside the wafer 11 by irradiating the laser beam 28 along the first division planned line S1 while moving 28 in the arrow X1 direction. In FIG. 5B, reference numeral 19 denotes a non-irradiated region of the laser beam.

  In this first modified layer forming step, as shown in FIG. 6, two adjacent device chips 15 arranged along the first division line S1 are set as a group G, and a laser is formed along a region corresponding to the group G. After continuously irradiating the beam, the laser beam is repeatedly irradiated again along the region corresponding to the group G adjacent to the group G beyond the intersection with the second division planned line S2, A group region processing step for laser processing the first division planned line S1 is included.

  The first modified layer forming step further includes a group G and one device set in the group region processing step in the first division line S1 adjacent to the first division line S1 in which the group region processing step is performed. It includes a group setting step for setting two device chips 15 as a group G by shifting the chips.

  Then, in the first modified layer forming step, the group region processing step and the group setting step are alternately repeated, and all the first division planned lines S1 extending in the first direction are laser processed, and the first modified layer forming step is performed inside the wafer 11. 1 The modified layer 17 is formed.

  In the wafer processing method of the present invention, after the first modified layer forming step is performed, the chuck table 24 is rotated by 90 degrees, and as shown in FIG. 7, the wavelength (for example, 1064 nm) having transparency to the wafer 11. ) Is positioned inside the wafer 11 corresponding to the second scheduled division line S2, the chuck table 28 is processed and fed in the direction of the arrow X1, and the laser beam is moved along the second scheduled division line S2. Irradiation forms the second modified layer 17 a inside the wafer 11.

  The second modified layer 17a is continuously formed along the second scheduled division line S2. This second modified layer forming step is performed for all of the second scheduled division lines S2 extending in the second direction.

  The first modified layer 17 is formed inside the wafer 11 along all the first division lines S1, the chuck table 24 is rotated by 90 degrees, and then the wafer 11 is arranged along all the second division lines S2. FIG. 8 is an explanatory view of the wafer 11 on which the second modified layer 17a is formed.

  As is apparent from FIG. 8, in the laser processing method of the present embodiment, in one device chip 15, the other scheduled line in both directions along the first and second scheduled lines S 1 and S 2. Since there are intersecting portions where the reforming layers 17a and 17 are formed without intersecting the reforming layers 17 and 17a along, the reforming layers 17 and 17a having good workability are formed at all the intersecting portions. And it can be formed in either direction of the second scheduled division lines S1 and S2. Accordingly, it is possible to prevent the division failure of the wafer 11 in the subsequent division step.

  Next, with reference to FIG. 9, the 2nd modified layer formation step of 2nd Embodiment of this invention is demonstrated. In the second modified layer forming step of the second embodiment, when the laser beam is irradiated along the second division planned line S2 while feeding the chuck table 24 in the direction of the arrow X1, the second division planned line S2 is used. The second modified layer 17 a is formed inside the wafer 11 by irradiating the laser beam except the region where the first modified layer 17 has already been formed along the first division line S 1 intersecting with the first divided line S 1. In FIG. 9B, reference numeral 19a indicates a non-irradiated region of the laser beam.

  Referring to FIG. 10, after the first modified layer forming step is performed along all the first division planned lines S <b> 1, the chuck table 24 is rotated by 90 degrees, and then along all the second division planned lines S <b> 2. The explanatory view of wafer 11 which performed the 2nd modification layer formation step of a 2nd embodiment is shown.

  In the laser processing method of the present embodiment, in one device chip 15, the modified layers 17 and 17a along the other division line in either direction along the first and second division lines S1 and S2. Since the intersecting portions where the modified layers 17a and 17 are formed without intersecting with each other exist in all intersecting portions, the division failure of the wafer 11 in the subsequent dividing step is prevented as in the processing method of the first embodiment. be able to.

  Examples of laser processing conditions in the first and second modified layer forming steps are as follows, for example.

Light source: LD excitation Q switch Nd: YVO4 laser Wavelength: 1064 nm
Average output: 1W
Pulse width: 40 ns
Condensing spot diameter: φ1μm
Repetition frequency: 100 kHz
Processing feed rate: 100 mm / s

  After performing the first and second modified layer forming steps, the dividing step shown in FIG. 11 is used to apply an external force to the wafer 11 and divide the wafer 11 into individual device chips 15.

  11 includes a frame holding means 32 that holds the annular frame F, and a tape expansion means 34 that extends the dicing tape T attached to the annular frame F held by the frame holding means 32. Yes.

  The frame holding means 32 includes an annular frame holding member 36 and a plurality of clamps 38 as fixing means arranged on the outer periphery of the frame holding member 36. An upper surface of the frame holding member 36 forms a mounting surface 36a on which the annular frame F is placed, and the annular frame F is placed on the mounting surface 36a.

  The annular frame F placed on the placement surface 36 a is fixed to the frame holding means 36 by the clamp 38. The frame holding means 32 configured in this manner is supported by the tape expanding means 34 so as to be movable in the vertical direction.

  The tape expansion means 34 includes an expansion drum 40 disposed inside an annular frame holding member 36. The upper end of the expansion drum 40 is closed with a lid 42. The expansion drum 40 has a diameter smaller than the inner diameter of the annular frame F and larger than the outer diameter of the wafer 11 attached to the dicing tape T attached to the annular frame F.

  The expansion drum 40 has a support flange 44 integrally formed at the lower end thereof. The tape expanding means 34 further includes a driving means 46 for moving the annular frame holding member 36 in the vertical direction. The drive means 46 is composed of a plurality of air cylinders 48 disposed on the support flange 44, and the piston rod 50 is connected to the lower surface of the frame holding member 36.

  The driving means 46 composed of a plurality of air cylinders 48 includes an annular frame holding member 36, a reference position where the mounting surface 36a is substantially the same height as the surface of the lid 42 which is the upper end of the expansion drum 40, and an expansion. It moves in the vertical direction between the extended position below the upper end of the drum 40 by a predetermined amount.

  With reference to FIG. 12, a description will be given of the dividing process of the wafer 11 performed using the dividing apparatus 30 configured as described above. As shown in FIG. 12A, the annular frame F that supports the wafer 11 via the dicing tape T is placed on the placement surface 36 a of the frame holding member 36 and fixed to the frame holding member 36 by the clamp 38. To do. At this time, the frame holding member 36 is positioned at a reference position where the mounting surface 36 a is substantially the same height as the upper end of the expansion drum 40.

  Next, the air cylinder 48 is driven to lower the frame holding member 36 to the extended position shown in FIG. As a result, the annular frame F fixed on the mounting surface 36a of the frame holding member 36 is lowered, so that the dicing tape T attached to the annular frame F abuts on the upper edge of the expansion drum 40 and mainly has a radius. Expanded in the direction.

  As a result, radial tensile forces act on the wafer 11 adhered to the dicing tape T. When a tensile force acts radially on the wafer 11 in this way, the modified layers 17 and 17a formed along the first and second scheduled division lines S1 and S2 serve as division starting points, and the wafer 11 becomes the modified layer 17. , 17a and divided into individual device chips 15.

  In the embodiment described above, the semiconductor wafer 11 has been described as the wafer to be processed by the processing method of the present invention. However, the workpiece is not limited to the semiconductor wafer 11, and the processing method of the present invention is not limited to the optical device wafer. It can be similarly applied to other workpieces such as ceramic substrates and glass substrates.

11 Semiconductor wafer S1 First division planned line S2 Second division planned line 15 Device (device chip)
DESCRIPTION OF SYMBOLS 10 Laser beam irradiation unit 12 Laser beam generation unit 14 Condenser 17 1st modified layer 17a 2nd modified layer 19, 19a Laser beam non-irradiation area G Group 24 Chuck table 30 Dividing device

Claims (2)

Processing a wafer in which a device is formed in each region defined by a plurality of first division lines extending in the first direction and a plurality of second division lines formed intersecting the first division lines A method of processing a wafer,
The first modified layer is formed inside the wafer by irradiating the laser beam along the first division line while positioning the condensing point of the laser beam having a wavelength transmissive to the wafer inside the wafer. A first modified layer forming step,
After performing the first modified layer forming step, the laser beam is irradiated along the second division line while a condensing point of a laser beam having a wavelength transmissive to the wafer is positioned inside the wafer. A second modified layer forming step of forming a second modified layer inside the wafer;
A dividing step of applying an external force to the wafer on which the first and second modified layers are formed and dividing the wafer into individual device chips along the first and second scheduled dividing lines.
The first modified layer forming step includes:
Two adjacent devices arranged along the first division line are grouped, and the laser beam is continuously irradiated along a region corresponding to the first group, and then an intersection with the second division line A group region processing step of repeatedly irradiating the laser beam again along the region corresponding to the second group adjacent to the first group beyond the first group,
In the first division planned line adjacent to the first division planned line that has been subjected to the group region processing step, the two devices are grouped by shifting the group set by the group region processing step by one device chip. And a group setting step for setting,
A wafer processing method, wherein the group region processing step and the group setting step are alternately repeated to process all the first division planned lines. In the second modified layer forming step,
When irradiating the laser beam along the second planned division line, except for a region where the first modified layer is already formed along the first planned division line intersecting the second planned division line The wafer processing method according to claim 1, wherein the laser beam is irradiated.

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