KR101112046B1 - 자기 정렬된 다마신 게이트 - Google Patents

자기 정렬된 다마신 게이트 Download PDF

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Publication number
KR101112046B1
KR101112046B1 KR1020067008094A KR20067008094A KR101112046B1 KR 101112046 B1 KR101112046 B1 KR 101112046B1 KR 1020067008094 A KR1020067008094 A KR 1020067008094A KR 20067008094 A KR20067008094 A KR 20067008094A KR 101112046 B1 KR101112046 B1 KR 101112046B1
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South Korea
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fin
forming
gate
region
etching
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KR1020067008094A
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English (en)
Korean (ko)
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KR20060108629A (ko
Inventor
사이러스 이. 태버리
쉬브리 에스. 아메드
매튜 에스. 바이노스키
스리칸테스바라 다크쉬나-머피
피크 조란 크리보카
하이홍 왕
치-유 양
빈 유
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글로벌파운드리즈 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
KR1020067008094A 2003-11-04 2004-10-08 자기 정렬된 다마신 게이트 Expired - Fee Related KR101112046B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/699,887 US7029958B2 (en) 2003-11-04 2003-11-04 Self aligned damascene gate
US10/699,887 2003-11-04
PCT/US2004/033251 WO2005048339A1 (en) 2003-11-04 2004-10-08 Self aligned damascene gate

Publications (2)

Publication Number Publication Date
KR20060108629A KR20060108629A (ko) 2006-10-18
KR101112046B1 true KR101112046B1 (ko) 2012-02-27

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KR1020067008094A Expired - Fee Related KR101112046B1 (ko) 2003-11-04 2004-10-08 자기 정렬된 다마신 게이트

Country Status (8)

Country Link
US (1) US7029958B2 (enExample)
JP (1) JP2007511071A (enExample)
KR (1) KR101112046B1 (enExample)
CN (1) CN100524655C (enExample)
DE (1) DE112004002107B4 (enExample)
GB (1) GB2424517B (enExample)
TW (1) TWI376803B (enExample)
WO (1) WO2005048339A1 (enExample)

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US7352034B2 (en) * 2005-08-25 2008-04-01 International Business Machines Corporation Semiconductor structures integrating damascene-body FinFET's and planar devices on a common substrate and methods for forming such semiconductor structures
US20090321830A1 (en) * 2006-05-15 2009-12-31 Carnegie Mellon University Integrated circuit device, system, and method of fabrication
US7678648B2 (en) * 2006-07-14 2010-03-16 Micron Technology, Inc. Subresolution silicon features and methods for forming the same
US7772048B2 (en) * 2007-02-23 2010-08-10 Freescale Semiconductor, Inc. Forming semiconductor fins using a sacrificial fin
US8518767B2 (en) * 2007-02-28 2013-08-27 International Business Machines Corporation FinFET with reduced gate to fin overlay sensitivity
TW200847292A (en) * 2007-05-29 2008-12-01 Nanya Technology Corp Method of manufacturing a self-aligned FinFET device
US7902000B2 (en) * 2008-06-04 2011-03-08 International Business Machines Corporation MugFET with stub source and drain regions
JP5404812B2 (ja) * 2009-12-04 2014-02-05 株式会社東芝 半導体装置の製造方法
CN102129982A (zh) * 2010-12-29 2011-07-20 北京大学深圳研究生院 半导体精细图形及鳍形场效应管的fin体的制作方法
CN102956484B (zh) * 2011-08-22 2016-03-30 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US8569822B2 (en) * 2011-11-02 2013-10-29 Macronix International Co., Ltd. Memory structure
TWI467577B (zh) * 2011-11-02 2015-01-01 Macronix Int Co Ltd 記憶體結構及其製造方法
CN113345952B (zh) 2011-12-22 2025-05-13 英特尔公司 具有颈状半导体主体的半导体器件以及形成不同宽度的半导体主体的方法
US20130200459A1 (en) * 2012-02-02 2013-08-08 International Business Machines Corporation Strained channel for depleted channel semiconductor devices
JP5624567B2 (ja) * 2012-02-03 2014-11-12 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
CN103594342B (zh) * 2012-08-13 2016-03-16 中芯国际集成电路制造(上海)有限公司 形成鳍部的方法和形成鳍式场效应晶体管的方法
CN104465347A (zh) * 2013-09-24 2015-03-25 北大方正集团有限公司 多晶硅表面处理方法及系统
US9653584B2 (en) * 2013-12-23 2017-05-16 Intel Corporation Pre-sculpting of Si fin elements prior to cladding for transistor channel applications
US9711645B2 (en) 2013-12-26 2017-07-18 International Business Machines Corporation Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment
TWI620234B (zh) * 2014-07-08 2018-04-01 聯華電子股份有限公司 一種製作半導體元件的方法
CN105762071B (zh) * 2014-12-17 2019-06-21 中国科学院微电子研究所 鳍式场效应晶体管及其鳍的制造方法
US10424664B2 (en) * 2016-12-14 2019-09-24 Globalfoundries Inc. Poly gate extension source to body contact

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US20020140039A1 (en) 2000-11-13 2002-10-03 International Business Machines Corporation Double gate trench transistor
US6583469B1 (en) * 2002-01-28 2003-06-24 International Business Machines Corporation Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same

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US6583469B1 (en) * 2002-01-28 2003-06-24 International Business Machines Corporation Self-aligned dog-bone structure for FinFET applications and methods to fabricate the same

Also Published As

Publication number Publication date
TWI376803B (en) 2012-11-11
US20050104091A1 (en) 2005-05-19
KR20060108629A (ko) 2006-10-18
TW200524159A (en) 2005-07-16
GB2424517B (en) 2007-07-11
CN100524655C (zh) 2009-08-05
GB2424517A (en) 2006-09-27
JP2007511071A (ja) 2007-04-26
CN1883041A (zh) 2006-12-20
US7029958B2 (en) 2006-04-18
DE112004002107B4 (de) 2010-05-06
GB0610759D0 (en) 2006-07-12
WO2005048339A1 (en) 2005-05-26
DE112004002107T5 (de) 2006-12-14

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