KR101107096B1 - 반도체 디바이스의 제조 방법 및 기판 처리 장치 - Google Patents

반도체 디바이스의 제조 방법 및 기판 처리 장치 Download PDF

Info

Publication number
KR101107096B1
KR101107096B1 KR1020100048697A KR20100048697A KR101107096B1 KR 101107096 B1 KR101107096 B1 KR 101107096B1 KR 1020100048697 A KR1020100048697 A KR 1020100048697A KR 20100048697 A KR20100048697 A KR 20100048697A KR 101107096 B1 KR101107096 B1 KR 101107096B1
Authority
KR
South Korea
Prior art keywords
metal compound
film
gas
processing chamber
supplying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020100048697A
Other languages
English (en)
Korean (ko)
Other versions
KR20100127192A (ko
Inventor
유키나오 카가
타츠유키 사이토
마사노리 사카이
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히다치 고쿠사이 덴키 filed Critical 가부시키가이샤 히다치 고쿠사이 덴키
Publication of KR20100127192A publication Critical patent/KR20100127192A/ko
Application granted granted Critical
Publication of KR101107096B1 publication Critical patent/KR101107096B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020100048697A 2009-05-25 2010-05-25 반도체 디바이스의 제조 방법 및 기판 처리 장치 Active KR101107096B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009125113 2009-05-25
JPJP-P-2009-125113 2009-05-25
JPJP-P-2010-115612 2010-05-19
JP2010115612A JP5774822B2 (ja) 2009-05-25 2010-05-19 半導体デバイスの製造方法及び基板処理装置

Publications (2)

Publication Number Publication Date
KR20100127192A KR20100127192A (ko) 2010-12-03
KR101107096B1 true KR101107096B1 (ko) 2012-01-30

Family

ID=43124839

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100048697A Active KR101107096B1 (ko) 2009-05-25 2010-05-25 반도체 디바이스의 제조 방법 및 기판 처리 장치

Country Status (4)

Country Link
US (1) US20100297846A1 (enExample)
JP (1) JP5774822B2 (enExample)
KR (1) KR101107096B1 (enExample)
TW (1) TWI415190B (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011055671A1 (ja) * 2009-11-04 2011-05-12 東京エレクトロン株式会社 成膜方法およびキャパシタの形成方法
US8652573B2 (en) 2010-07-15 2014-02-18 Asm International N.V. Method of CVD-depositing a film having a substantially uniform film thickness
US8133806B1 (en) * 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
TW201245514A (en) * 2010-12-07 2012-11-16 Hitachi Int Electric Inc Method of manufacturing substrate, method of manufacturing semiconductor device, and substrate processing apparatus
KR101378478B1 (ko) * 2011-03-23 2014-03-27 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
JP5872904B2 (ja) * 2012-01-05 2016-03-01 東京エレクトロン株式会社 ＴｉＮ膜の成膜方法および記憶媒体
US20150325447A1 (en) 2013-01-18 2015-11-12 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
US9059089B2 (en) 2013-02-28 2015-06-16 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
JP6245643B2 (ja) * 2013-03-28 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6202681B2 (ja) 2014-03-26 2017-09-27 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
WO2015147203A1 (ja) 2014-03-28 2015-10-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
WO2015145751A1 (ja) 2014-03-28 2015-10-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
JP6294151B2 (ja) * 2014-05-12 2018-03-14 東京エレクトロン株式会社 成膜方法
JP6164775B2 (ja) 2014-08-21 2017-07-19 株式会社日立国際電気 半導体デバイスの製造方法、基板処理装置およびプログラム
JP6086892B2 (ja) 2014-11-25 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6086933B2 (ja) 2015-01-06 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6490470B2 (ja) 2015-03-27 2019-03-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP6416031B2 (ja) 2015-03-30 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体デバイスの製造方法、基板処理装置およびプログラム
JP2017069313A (ja) 2015-09-29 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
JP6604801B2 (ja) 2015-09-29 2019-11-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP6538604B2 (ja) 2016-03-30 2019-07-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法および基板処理装置
KR102326377B1 (ko) * 2016-06-07 2021-11-15 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
JP6548622B2 (ja) 2016-09-21 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
CN111066124A (zh) * 2017-09-25 2020-04-24 株式会社国际电气 半导体装置的制造方法、基板处理装置及程序
WO2019064435A1 (ja) 2017-09-28 2019-04-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7065178B2 (ja) 2018-03-30 2022-05-11 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
CN113227450A (zh) 2019-02-28 2021-08-06 株式会社国际电气 半导体器件的制造方法、衬底处理装置及程序
WO2020179474A1 (ja) 2019-03-06 2020-09-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラム及び基板処理装置
US11482413B2 (en) * 2019-10-08 2022-10-25 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
JP7117336B2 (ja) 2020-01-30 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
WO2022204663A1 (en) * 2021-03-22 2022-09-29 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
JPWO2024176811A1 (enExample) * 2023-02-20 2024-08-29

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060025075A (ko) * 2004-09-15 2006-03-20 삼성전자주식회사 매끄러운 표면을 갖는 금속 나이트라이드 막의 형성방법들및 이를 이용한 반도체 장치의 형성방법들
KR100589285B1 (ko) * 2004-08-19 2006-06-14 주식회사 아이피에스 다중 적층막 구조의 금속 질화 막 증착 방법
KR20070028858A (ko) * 2005-09-08 2007-03-13 주식회사 아이피에스 인시튜 질화물(in-situ nitride) 박막증착방법
KR20080003920A (ko) * 2005-05-23 2008-01-08 동경 엘렉트론 주식회사 성막 방법 및 컴퓨터에 의해 독해가능한 기억매체

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6482733B2 (en) * 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
JP4236882B2 (ja) * 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
WO2004008513A1 (ja) * 2002-07-15 2004-01-22 Hitachi Kokusai Electric Inc. 半導体装置の製造方法及び基板処理装置
US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20060010495A1 (en) * 2004-07-06 2006-01-12 Oded Cohen Method for protecting a computer from suspicious objects
KR100587686B1 (ko) * 2004-07-15 2006-06-08 삼성전자주식회사 질화 티타늄막 형성방법 및 이를 이용한 커패시터 제조방법
JP4546519B2 (ja) * 2005-02-17 2010-09-15 株式会社日立国際電気 半導体デバイスの製造方法
JP4727667B2 (ja) * 2005-08-16 2011-07-20 株式会社日立国際電気 薄膜形成方法および半導体デバイスの製造方法
US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
WO2007058120A1 (ja) * 2005-11-18 2007-05-24 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
WO2007091555A1 (ja) * 2006-02-07 2007-08-16 Tokyo Electron Limited 基板処理装置の制御装置および基板処理装置の制御プログラム
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
KR100897819B1 (ko) * 2007-06-21 2009-05-18 주식회사 동부하이텍 발광 다이오드 구동 회로
JP5513767B2 (ja) * 2008-06-25 2014-06-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100589285B1 (ko) * 2004-08-19 2006-06-14 주식회사 아이피에스 다중 적층막 구조의 금속 질화 막 증착 방법
KR20060025075A (ko) * 2004-09-15 2006-03-20 삼성전자주식회사 매끄러운 표면을 갖는 금속 나이트라이드 막의 형성방법들및 이를 이용한 반도체 장치의 형성방법들
KR20080003920A (ko) * 2005-05-23 2008-01-08 동경 엘렉트론 주식회사 성막 방법 및 컴퓨터에 의해 독해가능한 기억매체
KR20070028858A (ko) * 2005-09-08 2007-03-13 주식회사 아이피에스 인시튜 질화물(in-situ nitride) 박막증착방법

Also Published As

Publication number Publication date
KR20100127192A (ko) 2010-12-03
JP2011006783A (ja) 2011-01-13
JP5774822B2 (ja) 2015-09-09
US20100297846A1 (en) 2010-11-25
TWI415190B (zh) 2013-11-11
TW201110234A (en) 2011-03-16

Similar Documents

Publication Publication Date Title
KR101107096B1 (ko) 반도체 디바이스의 제조 방법 및 기판 처리 장치
KR101814243B1 (ko) 반응관, 기판 처리 장치 및 반도체 장치의 제조 방법
KR101304368B1 (ko) 기판 처리 장치 및 반도체 장치의 제조 방법
KR101160805B1 (ko) 반도체 장치의 제조 방법, 기판 처리 장치 및 반도체 장치
KR101345120B1 (ko) 반도체 장치의 제조 방법 및 기판 처리 장치
JP5787488B2 (ja) 半導体装置の製造方法及び基板処理装置
US20110059600A1 (en) Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus
JP2021121009A (ja) 半導体装置の製造方法、プログラム及び基板処理装置
JP5385439B2 (ja) 半導体装置の製造方法及び基板処理装置
JP2011151294A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20141230

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20151217

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20161219

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20171219

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20181219

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

FPAY Annual fee payment

Payment date: 20191219

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000