KR101107096B1 - 반도체 디바이스의 제조 방법 및 기판 처리 장치 - Google Patents

반도체 디바이스의 제조 방법 및 기판 처리 장치 Download PDF

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KR101107096B1
KR101107096B1 KR1020100048697A KR20100048697A KR101107096B1 KR 101107096 B1 KR101107096 B1 KR 101107096B1 KR 1020100048697 A KR1020100048697 A KR 1020100048697A KR 20100048697 A KR20100048697 A KR 20100048697A KR 101107096 B1 KR101107096 B1 KR 101107096B1
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metal compound
film
gas
processing chamber
supplying
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KR20100127192A (ko
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유키나오 카가
타츠유키 사이토
마사노리 사카이
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020100048697A 2009-05-25 2010-05-25 반도체 디바이스의 제조 방법 및 기판 처리 장치 Active KR101107096B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009125113 2009-05-25
JPJP-P-2009-125113 2009-05-25
JP2010115612A JP5774822B2 (ja) 2009-05-25 2010-05-19 半導体デバイスの製造方法及び基板処理装置
JPJP-P-2010-115612 2010-05-19

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KR20100127192A KR20100127192A (ko) 2010-12-03
KR101107096B1 true KR101107096B1 (ko) 2012-01-30

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US (1) US20100297846A1 (enExample)
JP (1) JP5774822B2 (enExample)
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TW (1) TWI415190B (enExample)

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WO2011055671A1 (ja) * 2009-11-04 2011-05-12 東京エレクトロン株式会社 成膜方法およびキャパシタの形成方法
US8652573B2 (en) 2010-07-15 2014-02-18 Asm International N.V. Method of CVD-depositing a film having a substantially uniform film thickness
US8133806B1 (en) * 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
TW201245514A (en) * 2010-12-07 2012-11-16 Hitachi Int Electric Inc Method of manufacturing substrate, method of manufacturing semiconductor device, and substrate processing apparatus
US9123530B2 (en) * 2011-03-23 2015-09-01 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
JP5872904B2 (ja) 2012-01-05 2016-03-01 東京エレクトロン株式会社 ＴｉＮ膜の成膜方法および記憶媒体
US20150325447A1 (en) 2013-01-18 2015-11-12 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
US9059089B2 (en) 2013-02-28 2015-06-16 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device
JP6245643B2 (ja) 2013-03-28 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6202681B2 (ja) 2014-03-26 2017-09-27 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
WO2015145751A1 (ja) 2014-03-28 2015-10-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
JP6087023B2 (ja) 2014-03-28 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
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JP6086892B2 (ja) 2014-11-25 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6086933B2 (ja) 2015-01-06 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6490470B2 (ja) 2015-03-27 2019-03-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP6416031B2 (ja) 2015-03-30 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体デバイスの製造方法、基板処理装置およびプログラム
JP6604801B2 (ja) 2015-09-29 2019-11-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP2017069313A (ja) 2015-09-29 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
JP6538604B2 (ja) 2016-03-30 2019-07-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法および基板処理装置
KR102326377B1 (ko) * 2016-06-07 2021-11-15 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
JP6548622B2 (ja) 2016-09-21 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
JP7036832B2 (ja) 2017-09-25 2022-03-15 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム及び基板処理方法
WO2019064435A1 (ja) 2017-09-28 2019-04-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
WO2019188128A1 (ja) 2018-03-30 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102755424B1 (ko) 2019-02-28 2025-01-21 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
CN113518836B (zh) 2019-03-06 2023-11-24 株式会社国际电气 半导体装置的制造方法、记录介质、基板处理装置和基板处理方法
US11482413B2 (en) * 2019-10-08 2022-10-25 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
JP7117336B2 (ja) 2020-01-30 2022-08-12 株式会社Kokusai Electric 半導体装置の製造方法、プログラム及び基板処理装置
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KR20100127192A (ko) 2010-12-03
US20100297846A1 (en) 2010-11-25
TWI415190B (zh) 2013-11-11
JP5774822B2 (ja) 2015-09-09
TW201110234A (en) 2011-03-16
JP2011006783A (ja) 2011-01-13

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