KR100985363B1 - 반도체 장치의 제조방법 및 기판처리 장치 - Google Patents
반도체 장치의 제조방법 및 기판처리 장치 Download PDFInfo
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- KR100985363B1 KR100985363B1 KR1020047015035A KR20047015035A KR100985363B1 KR 100985363 B1 KR100985363 B1 KR 100985363B1 KR 1020047015035 A KR1020047015035 A KR 1020047015035A KR 20047015035 A KR20047015035 A KR 20047015035A KR 100985363 B1 KR100985363 B1 KR 100985363B1
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- 238000000034 method Methods 0.000 title claims abstract description 132
- 239000000758 substrate Substances 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 239000007789 gas Substances 0.000 claims abstract description 327
- 230000005284 excitation Effects 0.000 claims abstract description 101
- 229910052751 metal Inorganic materials 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 90
- 239000002994 raw material Substances 0.000 claims abstract description 87
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 66
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000001301 oxygen Substances 0.000 claims abstract description 62
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 34
- 230000008016 vaporization Effects 0.000 claims abstract description 31
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims abstract description 29
- 238000009834 vaporization Methods 0.000 claims abstract description 21
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims description 88
- 239000011261 inert gas Substances 0.000 claims description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 6
- 150000004706 metal oxides Chemical class 0.000 abstract description 6
- 125000002524 organometallic group Chemical group 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 25
- 239000012535 impurity Substances 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 15
- 239000007788 liquid Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 238000011534 incubation Methods 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- 238000010926 purge Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 229910017840 NH 3 Inorganic materials 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 238000002407 reforming Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000006467 substitution reaction Methods 0.000 description 4
- 238000006557 surface reaction Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- BJMBUXGFJIYZGH-UHFFFAOYSA-N C(CCC)[C-]1C=CC=C1.[CH-]1C=CC=C1.[Ru+2] Chemical compound C(CCC)[C-]1C=CC=C1.[CH-]1C=CC=C1.[Ru+2] BJMBUXGFJIYZGH-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 101100084627 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) pcb-4 gene Proteins 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000007562 laser obscuration time method Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
- C23C16/45542—Plasma being used non-continuously during the ALD reactions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (20)
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- 기판에 대해 유기원료를 기화한 가스를 공급하여, 기판 위에 상기 유기원료를 흡착시키는 원료 가스 공급공정과, 기판에 대해 플라즈마에 의해 여기한 가스를 공급하고, 기판 위에 흡착시킨 상기 유기원료와 상기 플라즈마에 의해 여기한 가스를 반응시켜서 금속막을 형성하는 여기가스 공급공정을 1회 또는 복수회 실시하는 것으로 기판 위에 제1 금속막을 형성하는 초기 성막공정과,기판에 대해 상기 유기원료를 기화한 가스와 플라즈마에 의해 여기하지 않은 산소 함유 가스 또는 질소 함유 가스를 동시에 공급하여 열 CVD법에 의해 상기 제1 금속막과 동일 물질로 구성되는 제2 금속막을 상기 제1 금속막 위에 형성하는 본 성막공정을 가지며,상기 초기성막공정과 상기 본성막 공정은 동일 처리실내에서 실시됨과 동시에 동일 처리온도에서 실시되는 것을 특징으로 하는 반도체 장치의 제조방법.
- 제16항에 있어서, 상기 초기 성막공정에서는, 막두께가 5∼15㎚의 상기 제1 금속막을 성막하고, 상기 본 성막공정에서는, 막두께가 20∼40㎚의 상기 제2 금속막을 성막하는 것을 특징으로 하는 반도체 장치의 제조방법.
- 제16항에 있어서, 상기 제1 금속막 및 상기 제2 금속막은 Ru막, RuO2막, Pt막, Ir막, IrO2막, TiN막, TaN막 중의 하나인 것을 특징으로 하는 반도체 장치의 제조방법.
- 제16항에 있어서, 상기 처리 온도가 250∼350℃에서 실시되는 것을 특징으로 하는 반도체 장치의 제조방법.
- 기판을 처리하는 처리실과,처리실 내의 상기 기판을 가열하는 히터와,처리실 내에 도전성의 금속막을 형성하기 위한 유기원료 가스를 공급하는 기화가스관과,질소 함유 가스를 공급하는 불활성 가스관과,산소 함유 가스를 공급하는 원료분해 가스관과,플라즈마에 의해 가스를 여기하는 여기수단과,상기 플라즈마에 의해 여기시킨 가스를 처리실 내에 공급하는 여기가스 공급구와, 처리실 내를 배기하는 배기관과,상기 처리실내에 상기 유기 원료 가스를 공급하여 상기 기판 위에 상기 유기 원료를 흡착시켜서 상기 처리실내에 상기 플라즈마에 의해 여기한 가스를 공급하고, 상기 기판 위에 흡착시킨 상기 유기원료와 상기 플라즈마에 의해 여기한 가스를 반응시켜서 금속막을 형성하고, 이를 1회 또는 복수회 실시하는 것으로 상기 기판 위에 제1 금속막을 형성하고, 상기 유기 원료를 기화한 가스와 플라즈마에 의해 여기하지 않은 상기 산소 함유 가스 또는 상기 질소 함유 가스를 상기 처리실내에 동시에 공급하여 열 CVD법에 의해 상기 제1 금속막과 동일한 물질로 구성되는 제2 금속막을 상기 제1 금속막 위에 형성하고, 상기 제1 금속막의 형성과 상기 제2 금속막의 형성을 동일 처리온도에서 실시하도록 제어하는 제어수단을 갖는 것을 특징으로 하는 기판처리 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2002205627 | 2002-07-15 | ||
JPJP-P-2002-00205627 | 2002-07-15 | ||
PCT/JP2003/008964 WO2004008513A1 (ja) | 2002-07-15 | 2003-07-15 | 半導体装置の製造方法及び基板処理装置 |
Publications (2)
Publication Number | Publication Date |
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KR20050023238A KR20050023238A (ko) | 2005-03-09 |
KR100985363B1 true KR100985363B1 (ko) | 2010-10-04 |
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KR1020047015035A KR100985363B1 (ko) | 2002-07-15 | 2003-07-15 | 반도체 장치의 제조방법 및 기판처리 장치 |
Country Status (4)
Country | Link |
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US (1) | US7524766B2 (ko) |
JP (1) | JP4559223B2 (ko) |
KR (1) | KR100985363B1 (ko) |
WO (1) | WO2004008513A1 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4626132B2 (ja) * | 2003-08-29 | 2011-02-02 | 東ソー株式会社 | Ru含有酸化物導電性薄膜の製造方法 |
JP2007526250A (ja) * | 2004-02-04 | 2007-09-13 | プラクスエア・テクノロジー・インコーポレイテッド | 核形成密度が高い有機金属化合物 |
KR100738068B1 (ko) * | 2004-08-20 | 2007-07-12 | 삼성전자주식회사 | 산화 환원 반응을 이용한 귀금속 전극 형성 방법 |
US8025922B2 (en) | 2005-03-15 | 2011-09-27 | Asm International N.V. | Enhanced deposition of noble metals |
US7666773B2 (en) | 2005-03-15 | 2010-02-23 | Asm International N.V. | Selective deposition of noble metal thin films |
US8435905B2 (en) * | 2005-06-13 | 2013-05-07 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device, and substrate processing apparatus |
JP2007073637A (ja) * | 2005-09-05 | 2007-03-22 | Tokyo Electron Ltd | 成膜方法および半導体装置の製造方法 |
US7662723B2 (en) * | 2005-12-13 | 2010-02-16 | Lam Research Corporation | Methods and apparatus for in-situ substrate processing |
US7691203B2 (en) * | 2006-01-27 | 2010-04-06 | Air Water Inc. | Film forming apparatus |
JP5549848B2 (ja) | 2008-12-25 | 2014-07-16 | 東ソー株式会社 | ルテニウム化合物、その製法及びそれを用いた成膜法 |
JP5774822B2 (ja) * | 2009-05-25 | 2015-09-09 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
US20130291797A1 (en) * | 2010-12-21 | 2013-11-07 | Masaki Kusuhara | Vaporizer |
KR20180107806A (ko) * | 2017-03-22 | 2018-10-04 | 삼성전자주식회사 | 막 형성 방법, 및 이를 이용한 가변 저항 메모리 소자의 제조방법 |
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US6780704B1 (en) * | 1999-12-03 | 2004-08-24 | Asm International Nv | Conformal thin films over textured capacitor electrodes |
US6617248B1 (en) * | 2000-11-10 | 2003-09-09 | Micron Technology, Inc. | Method for forming a ruthenium metal layer |
US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
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2003
- 2003-07-15 KR KR1020047015035A patent/KR100985363B1/ko active IP Right Grant
- 2003-07-15 WO PCT/JP2003/008964 patent/WO2004008513A1/ja active Application Filing
- 2003-07-15 US US10/521,248 patent/US7524766B2/en not_active Expired - Lifetime
- 2003-07-15 JP JP2004521211A patent/JP4559223B2/ja not_active Expired - Lifetime
Patent Citations (3)
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JP3046643B2 (ja) * | 1991-06-10 | 2000-05-29 | 富士通株式会社 | 半導体装置の製造方法 |
KR19990040442A (ko) * | 1997-11-18 | 1999-06-05 | 윤종용 | 원자층 증착법에 의한 알루미늄층의 제조방법 |
US20010054769A1 (en) | 2000-05-15 | 2001-12-27 | Ivo Raaijmakers | Protective layers prior to alternating layer deposition |
Also Published As
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WO2004008513A1 (ja) | 2004-01-22 |
KR20050023238A (ko) | 2005-03-09 |
JPWO2004008513A1 (ja) | 2005-11-10 |
US7524766B2 (en) | 2009-04-28 |
US20050250341A1 (en) | 2005-11-10 |
JP4559223B2 (ja) | 2010-10-06 |
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