JP2007526250A - 核形成密度が高い有機金属化合物 - Google Patents
核形成密度が高い有機金属化合物 Download PDFInfo
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- JP2007526250A JP2007526250A JP2006552136A JP2006552136A JP2007526250A JP 2007526250 A JP2007526250 A JP 2007526250A JP 2006552136 A JP2006552136 A JP 2006552136A JP 2006552136 A JP2006552136 A JP 2006552136A JP 2007526250 A JP2007526250 A JP 2007526250A
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- 238000013459 approach Methods 0.000 description 1
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- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000004744 butyloxycarbonyl group Chemical group 0.000 description 1
- 125000004063 butyryl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000004850 cyclobutylmethyl group Chemical group C1(CCC1)C* 0.000 description 1
- MTWLYYWAACQIEX-UHFFFAOYSA-N cyclopenta-1,3-diene 5-methylcyclopenta-1,3-diene ruthenium(2+) Chemical compound [Ru++].c1cc[cH-]c1.C[c-]1cccc1 MTWLYYWAACQIEX-UHFFFAOYSA-N 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 125000004186 cyclopropylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C1([H])[H] 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
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- 238000007710 freezing Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
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- 231100000206 health hazard Toxicity 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000005929 isobutyloxycarbonyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])OC(*)=O 0.000 description 1
- 125000004491 isohexyl group Chemical group C(CCC(C)C)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
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- UBPRTBRKRVMCNS-UHFFFAOYSA-N lithium 2,4-dimethylpenta-1,3-diene Chemical compound [Li+].CC(C)=CC(C)=[CH-] UBPRTBRKRVMCNS-UHFFFAOYSA-N 0.000 description 1
- DBKDYYFPDRPMPE-UHFFFAOYSA-N lithium;cyclopenta-1,3-diene Chemical compound [Li+].C=1C=C[CH-]C=1 DBKDYYFPDRPMPE-UHFFFAOYSA-N 0.000 description 1
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- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000004675 pentylcarbonyl group Chemical group C(CCCC)C(=O)* 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000004838 photoelectron emission spectroscopy Methods 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- BIXNGBXQRRXPLM-UHFFFAOYSA-K ruthenium(3+);trichloride;hydrate Chemical compound O.Cl[Ru](Cl)Cl BIXNGBXQRRXPLM-UHFFFAOYSA-K 0.000 description 1
- GTCKPGDAPXUISX-UHFFFAOYSA-N ruthenium(3+);trinitrate Chemical compound [Ru+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GTCKPGDAPXUISX-UHFFFAOYSA-N 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000005930 sec-butyloxycarbonyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(OC(*)=O)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- VYTRDIIHUCAZLL-UHFFFAOYSA-N sodium;1,3-dimethylcyclopenta-1,3-diene Chemical compound [Na+].CC=1C=C[C-](C)C=1 VYTRDIIHUCAZLL-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000012453 solvate Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WLPUWLXVBWGYMZ-UHFFFAOYSA-N tricyclohexylphosphine Chemical compound C1CCCCC1P(C1CCCCC1)C1CCCCC1 WLPUWLXVBWGYMZ-UHFFFAOYSA-N 0.000 description 1
- 150000004684 trihydrates Chemical group 0.000 description 1
- 238000005199 ultracentrifugation Methods 0.000 description 1
- 125000003774 valeryl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C07F19/00—Metal compounds according to more than one of main groups C07F1/00 - C07F17/00
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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Abstract
Description
[式中、Ra及びRcは、同じか又は異なり、それぞれが、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキル基を表わし、Rb、Rd、Re、R1、R2、及びR3は、同じか又は異なり、それぞれが、水素原子、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキルを表わす]に一部は関する。
次式により表わされる置換シクロペンタジエン化合物と
[式中、Ra及びRcは、同じか又は異なり、それぞれがハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキル基を表わし、Rb、Rd、Re、R1、R2、及びR3は、同じか又は異なり、それぞれが、水素原子、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキルを表わす]反応させることを含む方法に関する。
[式中、Ra及びRcは、同じか又は異なり、それぞれが、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキル基を表わし、Rb、Rd、Re、R1、R2、及びR3は、同じか又は異なり、それぞれが、水素原子、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキルを表わす]に一部は関する。
[式中、Ra、Rb、Rc、Rd、Re、R1、R2、及びR3は、上記に定義された通りである]で示される。より好ましい核形成密度が高い有機金属ルテニウム化合物は、上記最後の式、すなわち、(1,3−ジメチルシクロペンタジエニル)(2,4−ジメチルペンタジエニル)ルテニウムにより示される。
次式により表わされる置換シクロペンタジエン化合物と
[式中、Ra及びRcは、同じか又は異なり、それぞれがハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキル基を表わし、Rb、Rd、Re、R1、R2、及びR3は、同じか又は異なり、それぞれが、水素原子、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキルを表わす]反応させることを含む方法に関する。
(実施例1)
(1,3−ジメチルシクロペンタジエニル)(2,4−ジメチルペンタジエニル)ルテニウムの合成
(実施例2)
(1,3−ジメチルシクロペンタジエニル)(2,4−ジメチルペンタジエニル)ルテニウムの合成
Claims (10)
- (i)式LML’[式中、Mは遷移金属であり、Lは置換シクロペンタジエニル基又は置換シクロペンタジエニル類似基であり、L’は置換若しくは非置換ペンタジエニル基又は置換若しくは非置換ペンタジエニル類似基である]、或いは
(ii)式(L)2M’L’又はLM’(L’)2[式中、M’はランタニドであり、Lは、同じか又は異なり、置換シクロペンタジエニル基又は置換シクロペンタジエニル類似基であり、L’は、同じか又は異なり、置換若しくは非置換ペンタジエニル基又は置換若しくは非置換ペンタジエニル類似基である]
により表わされる核形成密度が高い有機金属化合物。 - 式LRuL’、(L)2RuL’又はLRu(L’)2により表わされる、請求項1に記載の核形成密度が高い有機金属化合物。
- 置換シクロペンタジエニル類似基が、シクロヘキサジエニル、シクロヘプタジエニル、シクロオクタジエニル、複素環基及び芳香族基から選択され、置換若しくは非置換ペンタジエニル類似基が、直鎖オレフィン、ヘキサジエニル、ヘプタジエニル及びオクタジエニルから選択される、請求項1に記載の核形成密度が高い有機金属化合物。
- 以下の式で表される
[式中、Ra及びRcは、同じか又は異なり、それぞれが、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキル基を表わし、Rb、Rd、Re、R1、R2、及びR3は、同じか又は異なり、それぞれが、水素原子、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキルを表わす]、請求項1に記載の核形成密度が高い有機金属化合物。 - 請求項4に記載の核形成密度が高い有機金属ルテニウム化合物を製造する方法であって、前記核形成密度が高い有機金属ルテニウム化合物を生成するのに十分な反応条件下で、次式により表わされるビス(置換ペンタジエニル)ルテニウム化合物を
次式により表わされる置換シクロペンタジエン化合物と
[式中、Ra及びRcは、同じか又は異なり、それぞれがハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキル基を表わし、Rb、Rd、Re、R1、R2、及びR3は、同じか又は異なり、それぞれが、水素原子、ハロゲン原子、1〜約12個の炭素原子を有するアシル基、1〜約12個の炭素原子を有するアルコキシ基、1〜約12個の炭素原子を有するアルコキシカルボニル基又は1〜約12個の炭素原子を有するアルキルを表わす]反応させることを含む方法。 - 高核形成有機金属化合物を製造する方法であって、
(i)金属塩(M”Xn)化合物、シクロペンタジエニル化合物(Cp)及びリガンド(L”)を、中間体化合物を形成するのに十分な反応条件下で反応させること、並びに、
前記中間体化合物をペンタジエニド化合物(PD)と、前記高核形成有機金属化合物を生成するのに十分な反応条件下で反応させること
を含み、
ただし、M”はVIII族金属であり、L”は電子対供与体化合物であり、Cpは、二置換又は多置換シクロペンタジエニル化合物であり、PDはペンタジエニド類似塩である)であり、或いは
(ii)金属塩(M”Xn)化合物、ペンタジエニル化合物(PD’)及びリガンド(L”)を、中間体化合物を形成するのに十分な反応条件下で反応させること、並びに、
前記中間体化合物をシクロペンタジエニド化合物(Cp’)と、前記高核形成有機金属化合物を生成するのに十分な反応条件下で反応させること
を含み、
ただし、M”はVIII族金属、L”は電子対供与体化合物であり、PD’はペンタジエニル化合物であり、Cp’は、二置換又は多置換シクロペンタジエニド類似塩である、方法。 - 請求項4に記載の核形成密度が高い有機金属ルテニウム化合物を分解し、これにより被膜、コーティング又は粉末を製造することにより、被膜、コーティング又は粉末を製造する方法。
- 前記核形成密度が高い有機金属ルテニウム化合物前駆体の分解が、熱的、化学的、光化学的又はプラズマ励起によるものであり、
前記核形成密度が高い有機金属ルテニウム化合物前駆体が気化され、
前記蒸気が基板を収納する蒸着反応器中に送り出され、
前記基板が、金属、金属ケイ化物、半導体、絶縁体及びバリヤ材料からなる群から選択される材料からなる、請求項9に記載の方法。
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JP2009007270A (ja) * | 2007-06-27 | 2009-01-15 | Tosoh Corp | ルテニウム化合物の製造方法および薄膜の製造方法 |
WO2010074037A1 (ja) * | 2008-12-25 | 2010-07-01 | 東ソー株式会社 | ルテニウム化合物、その製造方法、それを用いたルテニウム含有薄膜製造方法及びルテニウム含有薄膜 |
WO2011099467A1 (ja) * | 2010-02-12 | 2011-08-18 | Jsr株式会社 | ルテニウム膜形成用材料及びルテニウム膜形成方法 |
JP2011219475A (ja) * | 2010-04-13 | 2011-11-04 | Wc Heraeus Gmbh | 鉄族金属のビス(ペンタジエニル)錯体の製造方法 |
JP5892668B1 (ja) * | 2014-10-03 | 2016-03-23 | 田中貴金属工業株式会社 | 有機ルテニウム化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
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JP4888999B2 (ja) * | 2005-12-22 | 2012-02-29 | 株式会社高純度化学研究所 | ルテニウム膜形成用組成物 |
US7435484B2 (en) * | 2006-09-01 | 2008-10-14 | Asm Japan K.K. | Ruthenium thin film-formed structure |
ATE500261T1 (de) * | 2006-12-22 | 2011-03-15 | Air Liquide | Neue organische rutheniumverbindung, herstellungsverfahren dafür und verwendung als rutheniumvorläufer zur herstellung von filmbeschichteten metallelektroden auf rutheniumbasis |
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