KR101088926B1 - 쓰루-칩 연결부들을 지닌 프론트-엔드 공정처리된 웨이퍼 - Google Patents
쓰루-칩 연결부들을 지닌 프론트-엔드 공정처리된 웨이퍼 Download PDFInfo
- Publication number
- KR101088926B1 KR101088926B1 KR1020097014823A KR20097014823A KR101088926B1 KR 101088926 B1 KR101088926 B1 KR 101088926B1 KR 1020097014823 A KR1020097014823 A KR 1020097014823A KR 20097014823 A KR20097014823 A KR 20097014823A KR 101088926 B1 KR101088926 B1 KR 101088926B1
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- South Korea
- Prior art keywords
- vias
- semiconductor wafer
- forming
- electrically conductive
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- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88267106P | 2006-12-29 | 2006-12-29 | |
US60/882,671 | 2006-12-29 | ||
PCT/US2007/089061 WO2008083284A2 (fr) | 2006-12-29 | 2007-12-28 | Tranche traitée au niveau de l'extrémité frontale ayant des connexions traversant les puces |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090094371A KR20090094371A (ko) | 2009-09-04 |
KR101088926B1 true KR101088926B1 (ko) | 2011-12-01 |
Family
ID=39589215
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097014823A KR101088926B1 (ko) | 2006-12-29 | 2007-12-28 | 쓰루-칩 연결부들을 지닌 프론트-엔드 공정처리된 웨이퍼 |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2097924A4 (fr) |
JP (2) | JP2010515275A (fr) |
KR (1) | KR101088926B1 (fr) |
CN (1) | CN101663742B (fr) |
WO (1) | WO2008083284A2 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007044685B3 (de) * | 2007-09-19 | 2009-04-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektronisches System und Verfahren zur Herstellung eines dreidimensionalen elektronischen Systems |
FR2987937B1 (fr) * | 2012-03-12 | 2014-03-28 | Altatech Semiconductor | Procede de realisation de plaquettes semi-conductrices |
JP5925006B2 (ja) * | 2012-03-26 | 2016-05-25 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010030366A1 (en) | 2000-03-08 | 2001-10-18 | Hiroshi Nakano | Semiconducting system and production method |
US20050218488A1 (en) | 2004-03-31 | 2005-10-06 | Mie Matsuo | Electronic component having micro-electrical mechanical system |
US20060281363A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Remote chip attachment |
US20070048896A1 (en) | 2005-08-30 | 2007-03-01 | International Business Machines Corporation | Conductive through via structure and process for electronic device carriers |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03218653A (ja) * | 1989-11-13 | 1991-09-26 | Mitsubishi Electric Corp | エアーブリッジ金属配線を具えた半導体装置およびその製造方法 |
EP2560199B1 (fr) * | 2002-04-05 | 2016-08-03 | STMicroelectronics S.r.l. | Procédé de fabrication d'une interconnexion isolée traversant un corps de matériau semi-conducteur |
JP4285629B2 (ja) * | 2002-04-25 | 2009-06-24 | 富士通株式会社 | 集積回路を搭載するインターポーザ基板の作製方法 |
JP3748844B2 (ja) * | 2002-09-25 | 2006-02-22 | Necエレクトロニクス株式会社 | 半導体集積回路およびそのテスト方法 |
JP4145301B2 (ja) * | 2003-01-15 | 2008-09-03 | 富士通株式会社 | 半導体装置及び三次元実装半導体装置 |
JP4322508B2 (ja) * | 2003-01-15 | 2009-09-02 | 新光電気工業株式会社 | 半導体装置の製造方法 |
SE526366C3 (sv) * | 2003-03-21 | 2005-10-26 | Silex Microsystems Ab | Elektriska anslutningar i substrat |
JP3891299B2 (ja) * | 2003-05-06 | 2007-03-14 | セイコーエプソン株式会社 | 半導体装置の製造方法、半導体装置、半導体デバイス、電子機器 |
JP4340517B2 (ja) * | 2003-10-30 | 2009-10-07 | Okiセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
TWI228295B (en) * | 2003-11-10 | 2005-02-21 | Shih-Hsien Tseng | IC structure and a manufacturing method |
JP4114660B2 (ja) * | 2003-12-16 | 2008-07-09 | セイコーエプソン株式会社 | 半導体装置の製造方法、半導体装置、回路基板、電子機器 |
KR100569590B1 (ko) * | 2003-12-30 | 2006-04-10 | 매그나칩 반도체 유한회사 | 고주파 반도체 장치 및 그 제조방법 |
JPWO2005086216A1 (ja) * | 2004-03-09 | 2008-01-24 | 独立行政法人科学技術振興機構 | 半導体素子及び半導体素子の製造方法 |
JP4492196B2 (ja) * | 2004-04-16 | 2010-06-30 | セイコーエプソン株式会社 | 半導体装置の製造方法、回路基板、並びに電子機器 |
KR20070058445A (ko) * | 2004-07-02 | 2007-06-08 | 스트라스바흐, 인코포레이티드 | 웨이퍼 처리 방법 및 시스템 |
JP2006049557A (ja) * | 2004-08-04 | 2006-02-16 | Seiko Epson Corp | 半導体装置 |
CN101048868B (zh) * | 2004-08-20 | 2010-06-09 | 佐伊科比株式会社 | 具有三维层叠结构的半导体器件的制造方法 |
JP4524156B2 (ja) * | 2004-08-30 | 2010-08-11 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
US7767493B2 (en) * | 2005-06-14 | 2010-08-03 | John Trezza | Post & penetration interconnection |
-
2007
- 2007-12-28 KR KR1020097014823A patent/KR101088926B1/ko active IP Right Grant
- 2007-12-28 JP JP2009544291A patent/JP2010515275A/ja active Pending
- 2007-12-28 CN CN2007800479122A patent/CN101663742B/zh active Active
- 2007-12-28 WO PCT/US2007/089061 patent/WO2008083284A2/fr active Application Filing
- 2007-12-28 EP EP07870039A patent/EP2097924A4/fr not_active Withdrawn
-
2013
- 2013-05-31 JP JP2013115456A patent/JP5686851B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010030366A1 (en) | 2000-03-08 | 2001-10-18 | Hiroshi Nakano | Semiconducting system and production method |
US20050218488A1 (en) | 2004-03-31 | 2005-10-06 | Mie Matsuo | Electronic component having micro-electrical mechanical system |
US20060281363A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Remote chip attachment |
US20070048896A1 (en) | 2005-08-30 | 2007-03-01 | International Business Machines Corporation | Conductive through via structure and process for electronic device carriers |
Also Published As
Publication number | Publication date |
---|---|
JP2010515275A (ja) | 2010-05-06 |
EP2097924A2 (fr) | 2009-09-09 |
WO2008083284A2 (fr) | 2008-07-10 |
WO2008083284A3 (fr) | 2008-08-21 |
KR20090094371A (ko) | 2009-09-04 |
JP5686851B2 (ja) | 2015-03-18 |
CN101663742A (zh) | 2010-03-03 |
EP2097924A4 (fr) | 2012-01-04 |
CN101663742B (zh) | 2013-11-06 |
JP2013175786A (ja) | 2013-09-05 |
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