KR100996725B1 - 변형된 디바이스 막을 구비한 실리콘-온-절연체 디바이스및 절연 산화물을 부분적으로 대체하여 상기 디바이스를생성하는 방법 - Google Patents

변형된 디바이스 막을 구비한 실리콘-온-절연체 디바이스및 절연 산화물을 부분적으로 대체하여 상기 디바이스를생성하는 방법 Download PDF

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KR100996725B1
KR100996725B1 KR1020047021192A KR20047021192A KR100996725B1 KR 100996725 B1 KR100996725 B1 KR 100996725B1 KR 1020047021192 A KR1020047021192 A KR 1020047021192A KR 20047021192 A KR20047021192 A KR 20047021192A KR 100996725 B1 KR100996725 B1 KR 100996725B1
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silicon
oxide layer
buried oxide
recesses
layer
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KR20050013248A (ko
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마스자라위톨드피.
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글로벌파운드리즈 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76232—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials of trenches having a shape other than rectangular or V-shape, e.g. rounded corners, oblique or rounded trench walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
KR1020047021192A 2002-06-25 2003-06-04 변형된 디바이스 막을 구비한 실리콘-온-절연체 디바이스및 절연 산화물을 부분적으로 대체하여 상기 디바이스를생성하는 방법 Expired - Fee Related KR100996725B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/178,542 2002-06-25
US10/178,542 US6680240B1 (en) 2002-06-25 2002-06-25 Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
PCT/US2003/017824 WO2004001798A2 (en) 2002-06-25 2003-06-04 A silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide

Publications (2)

Publication Number Publication Date
KR20050013248A KR20050013248A (ko) 2005-02-03
KR100996725B1 true KR100996725B1 (ko) 2010-11-25

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KR1020047021192A Expired - Fee Related KR100996725B1 (ko) 2002-06-25 2003-06-04 변형된 디바이스 막을 구비한 실리콘-온-절연체 디바이스및 절연 산화물을 부분적으로 대체하여 상기 디바이스를생성하는 방법

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Country Link
US (1) US6680240B1 (enExample)
EP (1) EP1516362A2 (enExample)
JP (1) JP4452883B2 (enExample)
KR (1) KR100996725B1 (enExample)
CN (1) CN1333454C (enExample)
AU (1) AU2003238916A1 (enExample)
TW (1) TWI289895B (enExample)
WO (1) WO2004001798A2 (enExample)

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WO2004001798A2 (en) 2003-12-31
TWI289895B (en) 2007-11-11
CN1659696A (zh) 2005-08-24
TW200400564A (en) 2004-01-01
JP4452883B2 (ja) 2010-04-21
KR20050013248A (ko) 2005-02-03
WO2004001798A3 (en) 2004-07-29
EP1516362A2 (en) 2005-03-23
JP2005531144A (ja) 2005-10-13
AU2003238916A8 (en) 2004-01-06
US20040018668A1 (en) 2004-01-29
AU2003238916A1 (en) 2004-01-06
US6680240B1 (en) 2004-01-20
CN1333454C (zh) 2007-08-22

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