KR101052868B1 - Soi 소자 및 그의 제조방법 - Google Patents
Soi 소자 및 그의 제조방법 Download PDFInfo
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- KR101052868B1 KR101052868B1 KR1020080018899A KR20080018899A KR101052868B1 KR 101052868 B1 KR101052868 B1 KR 101052868B1 KR 1020080018899 A KR1020080018899 A KR 1020080018899A KR 20080018899 A KR20080018899 A KR 20080018899A KR 101052868 B1 KR101052868 B1 KR 101052868B1
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- silicon layer
- insulating film
- groove
- layer
- buried insulating
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 116
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 116
- 239000010703 silicon Substances 0.000 claims abstract description 116
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000012212 insulator Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 2
- 238000003860 storage Methods 0.000 abstract description 8
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
Abstract
Description
Claims (15)
- 실리콘 기판 상에 매몰 절연막과 제1실리콘층이 차례로 적층된 구조를 가지며, 상기 제1실리콘층의 표면으로부터 상기 매몰 절연막 내부까지 연장된 깊이를 갖는 홈이 구비된 SOI(Silicon On Insulator) 기판;상기 홈에 의해 한정된 매몰 절연막 부분과 제1실리콘층 하단부의 내측면에 형성된 절연막;상기 절연막 및 제1실리콘층 상단부 상에 상기 홈을 매립하도록 형성된 제2실리콘층;상기 제2실리콘층 상에 형성된 게이트; 및상기 게이트 양측의 제1실리콘층 내에 상기 절연막과 양측에서 접하도록 형성된 접합 영역;을 포함하며,상기 제1실리콘층에 배치된 부분과 상기 매몰 절연막 내부에 배치된 부분을 모두 포함하는 제2실리콘층은 상기 절연막과 상기 접합 영역에 의해 차단된 것을 특징으로 하는 SOI 소자.
- 제 1 항에 있어서,상기 매몰 절연막은 산화막을 포함하는 것을 특징으로 하는 SOI 소자.
- 제 1 항에 있어서,상기 홈은 수직형 홈과 상기 수직형 홈 아래에 배치된 구형 홈을 포함하는 벌브 형상을 갖는 것을 특징으로 하는 SOI 소자.
- 제 3 항에 있어서,상기 수직형 홈은 제1실리콘층의 상단부에 배치되며, 상기 구형 홈은 제1실리콘층의 하단부 및 매몰 절연막 내부에 배치된 것을 특징으로 하는 SOI 소자.
- 제 1 항에 있어서,상기 절연막은 산화막을 포함하는 것을 특징으로 하는 SOI 소자.
- 제 1 항에 있어서,상기 제2실리콘층은 에피 실리콘층으로 이루어진 것을 특징으로 하는 SOI 소자.
- 제 1 항에 있어서,상기 접합 영역은 상기 매몰 절연막과 접하도록 형성된 것을 특징으로 하는 SOI 소자.
- 실리콘 기판 상에 매몰 절연막과 제1실리콘층이 차례로 적층된 구조를 갖는 SOI 기판의 상기 제1실리콘층과 매몰 절연막 부분을 식각하여, 상기 제1실리콘층의 표면으로부터 상기 매몰 절연막 내부까지 연장된 깊이를 갖는 홈을 형성하는 단계;상기 홈에 의해 한정된 매몰 절연막 부분과 제1실리콘층 하단부의 내측면에 절연막을 형성하는 단계;상기 절연막 및 제1실리콘층 상단부 상에 상기 홈을 매립하도록 제2실리콘층을 형성하는 단계;상기 제2실리콘층 상에 게이트를 형성하는 단계; 및상기 게이트 양측의 제1실리콘층 내에 상기 절연막과 양측에서 접하도록 접합 영역을 형성하는 단계;를 포함하며,상기 제1실리콘층에 배치된 부분과 상기 매몰 절연막 내부에 배치된 부분을 모두 포함하는 제2실리콘층은 상기 절연막과 상기 접합 영역에 의해 차단되는 것을 특징으로 하는 SOI 소자의 제조방법.
- 제 8 항에 있어서,상기 매몰 절연막은 산화막을 포함하는 것을 특징으로 하는 SOI 소자의 제조방법.
- 제 8 항에 있어서,상기 홈은 수직형 홈과 상기 수직형 홈 아래에 배치된 구형 홈을 포함하는 벌브 형상을 갖도록 형성하는 것을 특징으로 하는 SOI 소자의 제조방법.
- 제 8 항에 있어서,상기 홈을 형성하는 단계는,상기 제1실리콘층의 상단부를 비등방성 식각하여 수직형 홈을 형성하는 단계; 및상기 수직형 홈 저면의 제1실리콘층 하단부 및 그 아래의 매몰 절연막 부분을 등방성 식각하여 구형 홈을 형성하는 단계;를 포함하는 것을 특징으로 하는 SOI 소자의 제조방법.
- 제 8 항에 있어서,상기 절연막은 산화막으로 형성하는 것을 특징으로 하는 SOI 소자의 제조방법.
- 제 8 항에 있어서,상기 제2실리콘층은 에피 실리콘층으로 형성하는 것을 특징으로 하는 SOI 소자의 제조방법.
- 제 13 항에 있어서,상기 에피 실리콘층은 SEG(Selective Epitaxial Growth) 공정으로 형성하는 것을 특징으로 하는 SOI 소자의 제조방법.
- 제 8 항에 있어서,상기 접합 영역은 상기 매몰 절연막과 접하도록 형성하는 것을 특징으로 하는 SOI 소자의 제조방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080018899A KR101052868B1 (ko) | 2008-02-29 | 2008-02-29 | Soi 소자 및 그의 제조방법 |
US12/329,926 US8232149B2 (en) | 2008-02-29 | 2008-12-08 | SOI device having an increasing charge storage capacity of transistor bodies and method for manufacturing the same |
US13/534,297 US20120267718A1 (en) | 2008-02-29 | 2012-06-27 | Soi device having an increasing charge storage capacity of transistor bodies and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080018899A KR101052868B1 (ko) | 2008-02-29 | 2008-02-29 | Soi 소자 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20090093396A KR20090093396A (ko) | 2009-09-02 |
KR101052868B1 true KR101052868B1 (ko) | 2011-07-29 |
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KR1020080018899A KR101052868B1 (ko) | 2008-02-29 | 2008-02-29 | Soi 소자 및 그의 제조방법 |
Country Status (2)
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US (2) | US8232149B2 (ko) |
KR (1) | KR101052868B1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100973272B1 (ko) * | 2008-04-25 | 2010-08-02 | 주식회사 하이닉스반도체 | Soi 소자 및 그의 제조방법 |
US9318492B2 (en) | 2014-04-02 | 2016-04-19 | International Business Machines Corporation | Floating body storage device employing a charge storage trench |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010064961A (ko) * | 1999-12-20 | 2001-07-11 | 박종섭 | 싱글 일렉트론 트랜지스터 제조방법 |
KR20070010835A (ko) * | 2005-07-20 | 2007-01-24 | 삼성전자주식회사 | 리세스 구조의 형성 방법, 이를 이용한 리세스된 채널을갖는 트랜지스터 및 그 제조 방법 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001068647A (ja) * | 1999-08-30 | 2001-03-16 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US6680240B1 (en) * | 2002-06-25 | 2004-01-20 | Advanced Micro Devices, Inc. | Silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide |
TWI235481B (en) * | 2002-12-17 | 2005-07-01 | Nanya Technology Corp | Memory device with vertical transistors and deep trench capacitors and fabricating method thereof |
US7709320B2 (en) * | 2006-06-28 | 2010-05-04 | International Business Machines Corporation | Method of fabricating trench capacitors and memory cells using trench capacitors |
KR100791342B1 (ko) * | 2006-08-09 | 2008-01-03 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR100979240B1 (ko) * | 2008-04-10 | 2010-08-31 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
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2008
- 2008-02-29 KR KR1020080018899A patent/KR101052868B1/ko active IP Right Grant
- 2008-12-08 US US12/329,926 patent/US8232149B2/en active Active
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2012
- 2012-06-27 US US13/534,297 patent/US20120267718A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010064961A (ko) * | 1999-12-20 | 2001-07-11 | 박종섭 | 싱글 일렉트론 트랜지스터 제조방법 |
KR20070010835A (ko) * | 2005-07-20 | 2007-01-24 | 삼성전자주식회사 | 리세스 구조의 형성 방법, 이를 이용한 리세스된 채널을갖는 트랜지스터 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
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US20120267718A1 (en) | 2012-10-25 |
US20090218624A1 (en) | 2009-09-03 |
KR20090093396A (ko) | 2009-09-02 |
US8232149B2 (en) | 2012-07-31 |
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