GB2445511B - An embedded strain layer in thin soi transistors and a method of forming the same - Google Patents

An embedded strain layer in thin soi transistors and a method of forming the same

Info

Publication number
GB2445511B
GB2445511B GB0807434A GB0807434A GB2445511B GB 2445511 B GB2445511 B GB 2445511B GB 0807434 A GB0807434 A GB 0807434A GB 0807434 A GB0807434 A GB 0807434A GB 2445511 B GB2445511 B GB 2445511B
Authority
GB
United Kingdom
Prior art keywords
forming
same
strain layer
thin soi
soi transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0807434A
Other versions
GB2445511A (en
GB0807434D0 (en
Inventor
Jan Hoentschel
Andy Wei
Thorsten Kammler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102005052055A external-priority patent/DE102005052055B3/en
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0807434D0 publication Critical patent/GB0807434D0/en
Publication of GB2445511A publication Critical patent/GB2445511A/en
Application granted granted Critical
Publication of GB2445511B publication Critical patent/GB2445511B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78639—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB0807434A 2005-10-31 2006-10-23 An embedded strain layer in thin soi transistors and a method of forming the same Expired - Fee Related GB2445511B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005052055A DE102005052055B3 (en) 2005-10-31 2005-10-31 Transistor and semiconductor components and production process for thin film silicon on insulator transistor has embedded deformed layer
US11/466,572 US7399663B2 (en) 2005-10-31 2006-08-23 Embedded strain layer in thin SOI transistors and a method of forming the same
PCT/US2006/041560 WO2007053382A1 (en) 2005-10-31 2006-10-23 An embedded strain layer in thin soi transistors and a method of forming the same

Publications (3)

Publication Number Publication Date
GB0807434D0 GB0807434D0 (en) 2008-05-28
GB2445511A GB2445511A (en) 2008-07-09
GB2445511B true GB2445511B (en) 2009-04-08

Family

ID=37667218

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0807434A Expired - Fee Related GB2445511B (en) 2005-10-31 2006-10-23 An embedded strain layer in thin soi transistors and a method of forming the same

Country Status (2)

Country Link
GB (1) GB2445511B (en)
WO (1) WO2007053382A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212413A (en) * 2008-03-06 2009-09-17 Renesas Technology Corp Semiconductor device and method of manufacturing semiconductor device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030057416A1 (en) * 2001-09-21 2003-03-27 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
WO2004001798A2 (en) * 2002-06-25 2003-12-31 Advanced Micro Devices, Inc. A silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
US20040104447A1 (en) * 2002-11-26 2004-06-03 Kim Sung-Min Integrated circuit structures including epitaxial silicon layers in active regions and methods of forming same
US20040108559A1 (en) * 2002-10-02 2004-06-10 Renesas Technology Corp. Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same
US20040188760A1 (en) * 2002-04-03 2004-09-30 Thomas Skotnicki Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit
US20050082531A1 (en) * 2003-10-17 2005-04-21 International Business Machines Corporaton Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures
US20050116290A1 (en) * 2003-12-02 2005-06-02 De Souza Joel P. Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers
WO2006052379A1 (en) * 2004-11-10 2006-05-18 Advanced Micro Devices, Inc. Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2887370B1 (en) * 2005-06-17 2007-12-28 Commissariat Energie Atomique METHOD FOR MANUFACTURING ISOLATED TRANSISTOR WITH CONSTRAINED CHANNEL

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030057416A1 (en) * 2001-09-21 2003-03-27 Amberwave Systems Corporation Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same
US20040188760A1 (en) * 2002-04-03 2004-09-30 Thomas Skotnicki Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit
WO2004001798A2 (en) * 2002-06-25 2003-12-31 Advanced Micro Devices, Inc. A silicon-on-insulator device with strained device film and method for making the same with partial replacement of isolation oxide
US20040108559A1 (en) * 2002-10-02 2004-06-10 Renesas Technology Corp. Insulated-gate field-effect transistor, method of fabricating same, and semiconductor device employing same
US20040104447A1 (en) * 2002-11-26 2004-06-03 Kim Sung-Min Integrated circuit structures including epitaxial silicon layers in active regions and methods of forming same
US20050082531A1 (en) * 2003-10-17 2005-04-21 International Business Machines Corporaton Double silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) structures
US20050116290A1 (en) * 2003-12-02 2005-06-02 De Souza Joel P. Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers
WO2006052379A1 (en) * 2004-11-10 2006-05-18 Advanced Micro Devices, Inc. Strained fully depleted silicon on insulator semiconductor device and manufacturing method therefor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Silicon-on-Nothing (SON) - an innovative process for advanced CMOS", Malgorzata et al, IEEE Transactions on Electron Devices, IEEE, Vol 47, No 11, November 2000 *

Also Published As

Publication number Publication date
GB2445511A (en) 2008-07-09
WO2007053382A1 (en) 2007-05-10
GB0807434D0 (en) 2008-05-28

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091210 AND 20091216

PCNP Patent ceased through non-payment of renewal fee

Effective date: 20111023