KR100994320B1 - 단결정 실리콘의 제조 방법, 단결정 실리콘 웨이퍼의 제조방법, 단결정 실리콘 제조용 종결정, 단결정 실리콘 잉곳및 단결정 실리콘 웨이퍼 - Google Patents

단결정 실리콘의 제조 방법, 단결정 실리콘 웨이퍼의 제조방법, 단결정 실리콘 제조용 종결정, 단결정 실리콘 잉곳및 단결정 실리콘 웨이퍼 Download PDF

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KR100994320B1
KR100994320B1 KR1020047016791A KR20047016791A KR100994320B1 KR 100994320 B1 KR100994320 B1 KR 100994320B1 KR 1020047016791 A KR1020047016791 A KR 1020047016791A KR 20047016791 A KR20047016791 A KR 20047016791A KR 100994320 B1 KR100994320 B1 KR 100994320B1
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single crystal
crystal
crystal silicon
seed
orientation
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KR20040101539A (ko
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데츠히로 이이다
유타카 시라이시
료타 스에와카
준스케 도미오카
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사무코 테크시부 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020047016791A 2002-04-19 2003-04-17 단결정 실리콘의 제조 방법, 단결정 실리콘 웨이퍼의 제조방법, 단결정 실리콘 제조용 종결정, 단결정 실리콘 잉곳및 단결정 실리콘 웨이퍼 Expired - Lifetime KR100994320B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002118281A JP4142332B2 (ja) 2002-04-19 2002-04-19 単結晶シリコンの製造方法、単結晶シリコンウェーハの製造方法、単結晶シリコン製造用種結晶、単結晶シリコンインゴットおよび単結晶シリコンウェーハ
JPJP-P-2002-00118281 2002-04-19
PCT/JP2003/004868 WO2003089697A1 (en) 2002-04-19 2003-04-17 Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer

Publications (2)

Publication Number Publication Date
KR20040101539A KR20040101539A (ko) 2004-12-02
KR100994320B1 true KR100994320B1 (ko) 2010-11-12

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KR1020047016791A Expired - Lifetime KR100994320B1 (ko) 2002-04-19 2003-04-17 단결정 실리콘의 제조 방법, 단결정 실리콘 웨이퍼의 제조방법, 단결정 실리콘 제조용 종결정, 단결정 실리콘 잉곳및 단결정 실리콘 웨이퍼

Country Status (7)

Country Link
US (1) US7226506B2 (enExample)
EP (1) EP1498516B8 (enExample)
JP (1) JP4142332B2 (enExample)
KR (1) KR100994320B1 (enExample)
DE (1) DE60335616D1 (enExample)
TW (1) TW200305663A (enExample)
WO (1) WO2003089697A1 (enExample)

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NO333319B1 (no) * 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
JP2007084358A (ja) * 2005-09-20 2007-04-05 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法
JP5023900B2 (ja) 2006-09-05 2012-09-12 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハ
JP2008088045A (ja) * 2006-09-05 2008-04-17 Sumco Corp シリコン単結晶の製造方法およびシリコンウェーハの製造方法
JP5445631B2 (ja) * 2006-09-05 2014-03-19 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法
JP5070916B2 (ja) * 2007-04-23 2012-11-14 株式会社Ｓｕｍｃｏ シリコン単結晶およびシリコンウェーハ
JP5003283B2 (ja) * 2007-05-23 2012-08-15 信越半導体株式会社 シリコン単結晶の引上げ方法
DE102008026784A1 (de) * 2008-06-04 2009-12-10 Siltronic Ag Epitaxierte Siliciumscheibe mit <110>-Kristallorientierung und Verfahren zu ihrer Herstellung
DE102010018570B4 (de) 2010-04-28 2017-06-08 Siltronic Ag Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben durch Bearbeiten eines Einkristalls
CN102168303A (zh) * 2011-03-29 2011-08-31 浙江晨方光电科技有限公司 一种提高110单晶硅成晶率的制备方法
RU2492025C1 (ru) * 2012-03-27 2013-09-10 Российская Федерация в лице Министерства промышленности и торговли Российской Федерации (Минпромторг России) Способ получения монокристаллических изделий из никелевых жаропрочных сплавов с заданной кристаллографической ориентацией
US20150044467A1 (en) * 2012-04-23 2015-02-12 Hwajin Jo Method of growing ingot and ingot
WO2014028831A1 (en) * 2012-08-17 2014-02-20 Gtat Corporation System and method of growing silicon ingots from seeds in a crucible and manufacture of seeds used therein
CN103436953B (zh) * 2013-08-27 2016-09-21 天津市环欧半导体材料技术有限公司 一种偏晶向重掺单晶的拉制方法
KR102150969B1 (ko) 2013-12-05 2020-10-26 삼성전자주식회사 반도체 장치 및 그 제조방법
CN104831343A (zh) * 2015-04-15 2015-08-12 南通大学 一种铸锭用籽晶拼接结构
JP6646769B1 (ja) * 2019-02-01 2020-02-14 株式会社サイオクス 窒化物半導体基板、積層構造体、および窒化物半導体基板の製造方法
CN109968136B (zh) * 2019-04-25 2023-08-18 内蒙古中环晶体材料有限公司 一种多边形单晶硅棒及其加工方法
JP7215411B2 (ja) * 2019-12-26 2023-01-31 株式会社Sumco シリコンウェーハの欠陥検査方法
CN117265645B (zh) * 2023-08-14 2025-12-26 湖北九峰山实验室 一种低缺陷氧化镓籽晶及其培育方法
EP4524296A1 (de) 2023-09-13 2025-03-19 Siltronic AG Verfahren zum ziehen eines einkristallstabs

Citations (3)

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JPS63123893A (ja) 1986-11-13 1988-05-27 Mitsubishi Metal Corp シリコン単結晶製造方法
US5769941A (en) 1996-05-01 1998-06-23 Motorola, Inc. Method of forming semiconductor material
US5911823A (en) 1995-12-13 1999-06-15 Komatsu Electronics Metals Co., Ltd. Method for pulling a single-crystal semiconductor

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US3788890A (en) * 1972-03-03 1974-01-29 Ibm Method of preparing dislocation-free crystals
US4002523A (en) * 1973-09-12 1977-01-11 Texas Instruments Incorporated Dislocation-free growth of silicon semiconductor crystals with <110> orientation
JPS5717494A (en) 1980-06-30 1982-01-29 Toshiba Corp Manufacture of single crystal
JPH0818899B2 (ja) 1989-08-22 1996-02-28 日本電気株式会社 結晶育成方法
JP2937115B2 (ja) * 1996-03-15 1999-08-23 住友金属工業株式会社 単結晶引き上げ方法
JP3446032B2 (ja) * 2000-02-25 2003-09-16 信州大学長 無転位シリコン単結晶の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63123893A (ja) 1986-11-13 1988-05-27 Mitsubishi Metal Corp シリコン単結晶製造方法
US5911823A (en) 1995-12-13 1999-06-15 Komatsu Electronics Metals Co., Ltd. Method for pulling a single-crystal semiconductor
US5769941A (en) 1996-05-01 1998-06-23 Motorola, Inc. Method of forming semiconductor material

Also Published As

Publication number Publication date
EP1498516A4 (en) 2008-04-23
DE60335616D1 (de) 2011-02-17
JP4142332B2 (ja) 2008-09-03
US7226506B2 (en) 2007-06-05
TW200305663A (en) 2003-11-01
TWI301160B (enExample) 2008-09-21
EP1498516B1 (en) 2011-01-05
US20050229840A1 (en) 2005-10-20
JP2003313089A (ja) 2003-11-06
KR20040101539A (ko) 2004-12-02
EP1498516B8 (en) 2011-03-02
EP1498516A1 (en) 2005-01-19
WO2003089697A1 (en) 2003-10-30

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