KR100988446B1 - 캐패시터 구조 및 이를 듀얼 다마신 공정으로 제조하는 방법 - Google Patents

캐패시터 구조 및 이를 듀얼 다마신 공정으로 제조하는 방법 Download PDF

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Publication number
KR100988446B1
KR100988446B1 KR1020030067833A KR20030067833A KR100988446B1 KR 100988446 B1 KR100988446 B1 KR 100988446B1 KR 1020030067833 A KR1020030067833 A KR 1020030067833A KR 20030067833 A KR20030067833 A KR 20030067833A KR 100988446 B1 KR100988446 B1 KR 100988446B1
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South Korea
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conductive
capacitor
plate
dielectric
forming
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KR1020030067833A
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KR20040029269A (ko
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세일레쉬엠. 머천트
이펭더블유. 얀
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에이저 시스템즈 인크
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020030067833A 2002-09-30 2003-09-30 캐패시터 구조 및 이를 듀얼 다마신 공정으로 제조하는 방법 Expired - Lifetime KR100988446B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/260,693 US6784478B2 (en) 2002-09-30 2002-09-30 Junction capacitor structure and fabrication method therefor in a dual damascene process
US10/260,693 2002-09-30

Publications (2)

Publication Number Publication Date
KR20040029269A KR20040029269A (ko) 2004-04-06
KR100988446B1 true KR100988446B1 (ko) 2010-10-18

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KR1020030067833A Expired - Lifetime KR100988446B1 (ko) 2002-09-30 2003-09-30 캐패시터 구조 및 이를 듀얼 다마신 공정으로 제조하는 방법

Country Status (5)

Country Link
US (1) US6784478B2 (enExample)
JP (1) JP5039267B2 (enExample)
KR (1) KR100988446B1 (enExample)
GB (1) GB2394358B (enExample)
TW (1) TWI273702B (enExample)

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KR100480641B1 (ko) * 2002-10-17 2005-03-31 삼성전자주식회사 고 커패시턴스를 지니는 금속-절연체-금속 커패시터, 이를구비하는 집적회로 칩 및 이의 제조 방법
US7153776B2 (en) 2002-11-27 2006-12-26 International Business Machines Corporation Method for reducing amine based contaminants
US7374993B2 (en) * 2003-10-27 2008-05-20 Micron Technology, Inc. Methods of forming capacitors
US7223684B2 (en) * 2004-07-14 2007-05-29 International Business Machines Corporation Dual damascene wiring and method
JP2006108490A (ja) * 2004-10-07 2006-04-20 Sony Corp Ｍｉｍ型キャパシタを有する半導体デバイスおよびその製造方法
US7645675B2 (en) * 2006-01-13 2010-01-12 International Business Machines Corporation Integrated parallel plate capacitors
US20070259519A1 (en) * 2006-05-02 2007-11-08 International Business Machines Corporation Interconnect metallization process with 100% or greater step coverage
WO2008010028A1 (en) * 2006-06-15 2008-01-24 Freescale Semiconductor, Inc. Mim capacitor integration
US7511939B2 (en) * 2006-08-24 2009-03-31 Analog Devices, Inc. Layered capacitor architecture and fabrication method
JP2008085175A (ja) * 2006-09-28 2008-04-10 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置、基板処理システム、プログラム及び記憶媒体。
US7608538B2 (en) 2007-01-05 2009-10-27 International Business Machines Corporation Formation of vertical devices by electroplating
JP2009049078A (ja) * 2007-08-15 2009-03-05 Elpida Memory Inc 半導体装置の製造方法
JP2010118427A (ja) 2008-11-12 2010-05-27 Nec Electronics Corp 半導体装置および半導体装置の製造方法
US20100224960A1 (en) * 2009-03-04 2010-09-09 Kevin John Fischer Embedded capacitor device and methods of fabrication
US9331137B1 (en) * 2012-03-27 2016-05-03 Altera Corporation Metal-insulator-metal capacitors between metal interconnect layers
KR101934426B1 (ko) * 2012-11-26 2019-01-03 삼성전자 주식회사 반도체 장치 및 그 제조 방법
CN104103495A (zh) * 2013-04-02 2014-10-15 中芯国际集成电路制造(上海)有限公司 具有mim电容的半导体器件及其形成方法
US9219110B2 (en) 2014-04-10 2015-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9368392B2 (en) 2014-04-10 2016-06-14 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9391016B2 (en) * 2014-04-10 2016-07-12 Taiwan Semiconductor Manufacturing Co., Ltd. MIM capacitor structure
US9425061B2 (en) 2014-05-29 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Buffer cap layer to improve MIM structure performance
US9831238B2 (en) * 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
US9478602B2 (en) * 2014-10-07 2016-10-25 Globalfoundries Inc. Method of forming an embedded metal-insulator-metal (MIM) capacitor
US20170047276A1 (en) * 2015-08-13 2017-02-16 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
US11121073B2 (en) * 2018-04-02 2021-09-14 Intel Corporation Through plate interconnect for a vertical MIM capacitor
US12261168B2 (en) * 2021-02-16 2025-03-25 Efficient Power Conversion Corporation Gate metal-insulator-field plate metal integrated circuit capacitor and method of forming the same
US11901283B2 (en) * 2021-03-18 2024-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitor and method for forming the same
CN115483197B (zh) * 2021-05-31 2025-12-05 联华电子股份有限公司 电容器结构以及其制作方法
CN119153431A (zh) * 2023-06-14 2024-12-17 中芯国际集成电路制造(上海)有限公司 电容器件及其形成方法

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JP2001313372A (ja) 2000-03-31 2001-11-09 Internatl Business Mach Corp <Ibm> キャパシタ構造およびその製造方法

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Also Published As

Publication number Publication date
GB2394358A (en) 2004-04-21
TW200405566A (en) 2004-04-01
GB0319129D0 (en) 2003-09-17
JP2004128498A (ja) 2004-04-22
US6784478B2 (en) 2004-08-31
US20040061177A1 (en) 2004-04-01
TWI273702B (en) 2007-02-11
KR20040029269A (ko) 2004-04-06
JP5039267B2 (ja) 2012-10-03
GB2394358B (en) 2006-07-19

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