KR100982606B1 - 고체 촬상 장치 및 그의 제조 방법 - Google Patents
고체 촬상 장치 및 그의 제조 방법 Download PDFInfo
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- KR100982606B1 KR100982606B1 KR1020090091007A KR20090091007A KR100982606B1 KR 100982606 B1 KR100982606 B1 KR 100982606B1 KR 1020090091007 A KR1020090091007 A KR 1020090091007A KR 20090091007 A KR20090091007 A KR 20090091007A KR 100982606 B1 KR100982606 B1 KR 100982606B1
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- 238000003384 imaging method Methods 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 239000000565 sealant Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052802 copper Inorganic materials 0.000 abstract description 6
- 239000010949 copper Substances 0.000 abstract description 6
- 239000004642 Polyimide Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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Abstract
Description
Claims (10)
- 복수의 광 센서 및 본딩 패드가 표면에 형성된 반도체 기판을 포함하는 고체 촬상 장치에 있어서,판면을 상기 광 센서에 대향시켜 상기 반도체 기판의 표면에 고정된 투명판과, - 상기 투명판은 능선부가 모따기 되어 있음 -상기 본딩 패드의 하면으로부터 상기 반도체 기판의 이면에 이르는 상기 반도체 기판에 형성된 관통 홀과,상기 반도체 기판의 상기 관통 홀의 내면을 피복하는 제1 절연막과,상기 반도체 기판의 이면에서의 적어도 상기 반도체 기판의 상기 관통 홀의 개구 개소를 둘러싸고 피착된 제2 절연막과,상기 반도체 기판의 상기 관통 홀에 충전되어 상기 본딩 패드의 하면에 전기적으로 접속됨과 함께 상기 반도체 기판의 상기 관통 홀의 상기 개구로부터 노출되는 도전 재료와,판면을 상기 반도체 기판의 이면에 대향시켜 동일 이면에 고정된 플렉시블 회로 기판을 포함하고,상기 플렉시블 회로 기판에 형성된 배선은 상기 반도체 기판의 상기 관통 홀의 개구로부터 노출된 상기 도전 재료에 전기적으로 접속되어 있는 것을 특징으로 하는 고체 촬상 장치.
- 제1항에 있어서,상기 플렉시블 회로 기판에는, 상기 반도체 기판의 상기 관통 홀에 대응하는 개소에 관통 홀이 형성되어 있고, 상기 도전 재료는, 상기 반도체 기판의 상기 관통 홀 및 상기 플렉시블 회로 기판의 상기 관통 홀에 충전되어 있는 것을 특징으로 하는 고체 촬상 장치.
- 제1항에 있어서,상기 투명판은 평면에서 볼 때 상기 반도체 기판과 동일 형상, 동일 사이즈로 형성되어 있는 것을 특징으로 하는 고체 촬상 장치.
- 제1항에 있어서,상기 투명판은 상기 반도체 기판의 표면과의 사이에 개재하는 밀봉제에 의해 상기 반도체 기판에 고정되고, 상기 밀봉제는, 상기 반도체 기판 표면의 주변부에 적어도 상기 광 센서의 배열 개소의 전체를 둘러싸고 연장되며, 상기 투명판 및 상기 반도체 기판에 의해 사이에 끼워지며 상기 밀봉제에 의해 둘러싸인 간극 공간은 기밀하게 형성되어 있는 것을 특징으로 하는 고체 촬상 장치.
- 제1항에 있어서,상기 도전 재료는 경화된 도전 페이스트인 것을 특징으로 하는 고체 촬상 장치.
- 복수의 광 센서 및 본딩 패드가 표면에 형성된 반도체 기판을 포함하는 고체 촬상 장치를 제조하는 방법에 있어서,상기 고체 촬상 장치의 반도체 기판 부분이 복수 형성된 반도체 웨이퍼의 표면에, 판면을 상기 표면에 대향시켜 상기 반도체 웨이퍼와 동등한 크기의 투명판을 접착하고,상기 투명판이 접착된 상기 반도체 웨이퍼의 이면을 연삭하여 상기 반도체 웨이퍼의 두께를 감소시키며,상기 반도체 웨이퍼의 이면으로부터 상기 본딩 패드의 하면에 이르는 관통 홀을 형성하고,상기 관통 홀의 내면에 제1 절연막을 피착시키며,상기 반도체 웨이퍼의 이면에서의 적어도 상기 관통 홀의 개구 개소를 둘러싸고 제2 절연막을 피착시키고,상기 반도체 웨이퍼의 절단에 앞서서, 상기 투명판의 표면에 횡단면이 V자형인 홈을 형성하고,상기 홈을 따라 상기 반도체 웨이퍼 및 상기 투명판을 절단하여 모따기된 투명판을 형성하고,상기 반도체 웨이퍼를 상기 투명판과 함께 고체 촬상 장치마다 절단하며,고체 촬상 장치마다 절단한 상기 반도체 웨이퍼의 이면에 플렉시블 회로 기판을 부착하고,상기 관통 홀에 도전 재료를 충전하고, 상기 도전 재료에 의해, 상기 본딩 패드와 상기 플렉시블 회로 기판에 형성된 배선을 접속하는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
- 제6항에 있어서,상기 도전 재료는, 상기 본딩 패드의 하면에 전기적으로 접속됨과 함께 상기 관통 홀의 상기 개구로부터 노출되도록 하여 상기 관통 홀에 충전하는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
- 삭제
- 제6항에 있어서,상기 투명판은 상기 반도체 웨이퍼의 표면과의 사이에 개재하는 밀봉제에 의해 상기 반도체 웨이퍼에 접착되고, 상기 밀봉제는, 각 고체 촬상 장치마다의 상기 광 센서의 배열 개소 전체를 둘러싸고 도포되며, 상기 투명판 및 상기 반도체 웨이퍼에 의해 사이에 끼워지며 상기 밀봉제에 의해 둘러싸인 간극 공간은 기밀하게 형성되는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
- 제7항에 있어서,상기 도전 재료로서 도전 페이스트를 이용하고, 상기 도전 페이스트는 상기 관통 홀에 충전한 후, 열에 의해 경화시키는 것을 특징으로 하는 고체 촬상 장치의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JPJP-P-2001-308512 | 2001-10-04 | ||
JP2001308512A JP4000507B2 (ja) | 2001-10-04 | 2001-10-04 | 固体撮像装置の製造方法 |
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KR20020060068A Division KR100932824B1 (ko) | 2001-10-04 | 2002-10-02 | 고체 촬상 장치 및 그의 제조 방법 |
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KR20090115919A KR20090115919A (ko) | 2009-11-10 |
KR100982606B1 true KR100982606B1 (ko) | 2010-09-15 |
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Application Number | Title | Priority Date | Filing Date |
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KR20020060068A KR100932824B1 (ko) | 2001-10-04 | 2002-10-02 | 고체 촬상 장치 및 그의 제조 방법 |
KR1020090090990A KR101026282B1 (ko) | 2001-10-04 | 2009-09-25 | 고체 촬상 장치 및 그의 제조 방법 |
KR1020090091002A KR100982621B1 (ko) | 2001-10-04 | 2009-09-25 | 고체 촬상 장치 및 그의 제조 방법 |
KR1020090090989A KR101016498B1 (ko) | 2001-10-04 | 2009-09-25 | 고체 촬상 장치의 제조 방법 |
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Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4000507B2 (ja) * | 2001-10-04 | 2007-10-31 | ソニー株式会社 | 固体撮像装置の製造方法 |
TWI232560B (en) | 2002-04-23 | 2005-05-11 | Sanyo Electric Co | Semiconductor device and its manufacture |
EP1369929B1 (en) * | 2002-05-27 | 2016-08-03 | STMicroelectronics Srl | A process for manufacturing encapsulated optical sensors, and an encapsulated optical sensor manufactured using this process |
TWI229435B (en) | 2002-06-18 | 2005-03-11 | Sanyo Electric Co | Manufacture of semiconductor device |
JP4443865B2 (ja) | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | 固体撮像装置およびその製造方法 |
TWI227550B (en) | 2002-10-30 | 2005-02-01 | Sanyo Electric Co | Semiconductor device manufacturing method |
US6807503B2 (en) * | 2002-11-04 | 2004-10-19 | Brion Technologies, Inc. | Method and apparatus for monitoring integrated circuit fabrication |
JP4510403B2 (ja) * | 2003-05-08 | 2010-07-21 | 富士フイルム株式会社 | カメラモジュール及びカメラモジュールの製造方法 |
JP2004349593A (ja) | 2003-05-26 | 2004-12-09 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
TWI275168B (en) * | 2003-06-06 | 2007-03-01 | Sanyo Electric Co | Semiconductor device and method for making the same |
KR100526191B1 (ko) * | 2003-06-18 | 2005-11-03 | 삼성전자주식회사 | 고체 촬상용 반도체 장치 |
JP4401181B2 (ja) | 2003-08-06 | 2010-01-20 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
EP1542272B1 (en) * | 2003-10-06 | 2016-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101012700B1 (ko) * | 2003-11-12 | 2011-02-09 | 삼성테크윈 주식회사 | 이미지 센서용 모듈과 그것을 구비한 카메라 모듈 및,그것의 제조 방법 |
JP4542768B2 (ja) * | 2003-11-25 | 2010-09-15 | 富士フイルム株式会社 | 固体撮像装置及びその製造方法 |
WO2005060004A1 (ja) * | 2003-12-18 | 2005-06-30 | Matsushita Electric Industrial Co.,Ltd. | 固体撮像装置、その生産方法、及びその固体撮像装置を備えるカメラ、並びに受光チップ |
JP4236594B2 (ja) | 2004-01-27 | 2009-03-11 | シャープ株式会社 | 光学装置用モジュール及び光学装置用モジュールの製造方法 |
KR100546411B1 (ko) * | 2004-05-20 | 2006-01-26 | 삼성전자주식회사 | 플립 칩 패키지, 그 패키지를 포함하는 이미지 센서 모듈및 그 제조방법 |
US7498647B2 (en) * | 2004-06-10 | 2009-03-03 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
US20060043513A1 (en) * | 2004-09-02 | 2006-03-02 | Deok-Hoon Kim | Method of making camera module in wafer level |
KR100608420B1 (ko) * | 2004-11-01 | 2006-08-02 | 동부일렉트로닉스 주식회사 | 이미지 센서 칩 패키지 및 그 제조방법 |
US7285434B2 (en) * | 2005-03-09 | 2007-10-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and method for manufacturing the same |
JP2007012995A (ja) | 2005-07-01 | 2007-01-18 | Toshiba Corp | 超小型カメラモジュール及びその製造方法 |
KR100692977B1 (ko) | 2005-09-15 | 2007-03-12 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
KR100752713B1 (ko) * | 2005-10-10 | 2007-08-29 | 삼성전기주식회사 | 이미지센서의 웨이퍼 레벨 칩 스케일 패키지 및 그제조방법 |
JP2009512213A (ja) * | 2005-10-11 | 2009-03-19 | ボク,タエソック | シリコン・バイア・コンタクトを利用したシーモス・イメージセンサーのウェハー・レべル・パッケージおよびその製造方法 |
JP4764710B2 (ja) * | 2005-12-06 | 2011-09-07 | 株式会社ザイキューブ | 半導体装置とその製造方法 |
JP2007165789A (ja) | 2005-12-16 | 2007-06-28 | Olympus Corp | 半導体装置の製造方法 |
TWI324800B (en) | 2005-12-28 | 2010-05-11 | Sanyo Electric Co | Method for manufacturing semiconductor device |
JP2006191126A (ja) * | 2006-01-30 | 2006-07-20 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP4403424B2 (ja) * | 2006-11-30 | 2010-01-27 | ソニー株式会社 | 固体撮像装置 |
US20080284041A1 (en) * | 2007-05-18 | 2008-11-20 | Samsung Electronics Co., Ltd. | Semiconductor package with through silicon via and related method of fabrication |
DE102008024443A1 (de) | 2007-05-18 | 2008-12-18 | Samsung Electronics Co., Ltd., Suwon | Integrierte Halbleiterschaltkreispackung, Herstellungsverfahren, optisches Bauelementmodul und elektronisches System |
KR100860308B1 (ko) * | 2007-06-05 | 2008-09-25 | 삼성전기주식회사 | 카메라 모듈 패키지 및 그 제조방법 |
CN101123231B (zh) * | 2007-08-31 | 2010-11-03 | 晶方半导体科技(苏州)有限公司 | 微机电系统的晶圆级芯片尺寸封装结构及其制造方法 |
JP5197219B2 (ja) * | 2007-11-22 | 2013-05-15 | パナソニック株式会社 | 半導体装置およびその製造方法 |
JP4799542B2 (ja) * | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ |
JP4799543B2 (ja) * | 2007-12-27 | 2011-10-26 | 株式会社東芝 | 半導体パッケージ及びカメラモジュール |
JP4908528B2 (ja) * | 2009-01-26 | 2012-04-04 | 株式会社フジクラ | 半導体パッケージ |
US9142586B2 (en) * | 2009-02-24 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pad design for backside illuminated image sensor |
US8531565B2 (en) * | 2009-02-24 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Front side implanted guard ring structure for backside illuminated image sensor |
JP5985136B2 (ja) | 2009-03-19 | 2016-09-06 | ソニー株式会社 | 半導体装置とその製造方法、及び電子機器 |
KR100997797B1 (ko) * | 2009-04-10 | 2010-12-02 | 주식회사 하이닉스반도체 | 이미지 센서 모듈 |
JP2011009645A (ja) * | 2009-06-29 | 2011-01-13 | Toshiba Corp | 半導体装置及びその製造方法 |
US8421175B2 (en) * | 2009-09-10 | 2013-04-16 | STMicroelectronics ( Research & Development) Limited | Wafer level packaged integrated circuit |
JP5442394B2 (ja) | 2009-10-29 | 2014-03-12 | ソニー株式会社 | 固体撮像装置とその製造方法、及び電子機器 |
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CN202120913U (zh) * | 2011-06-08 | 2012-01-18 | 旭丽电子(广州)有限公司 | 薄型化图像撷取模块 |
JP2013034046A (ja) | 2011-08-01 | 2013-02-14 | Sony Corp | カメラモジュール、製造装置、及び製造方法 |
CN104284060B (zh) * | 2013-07-12 | 2019-07-02 | 鸿富锦精密工业(深圳)有限公司 | 相机模组 |
US9634059B2 (en) * | 2014-12-30 | 2017-04-25 | Semiconductor Components Industries, Llc | Methods of forming image sensor integrated circuit packages |
JP6633067B2 (ja) * | 2015-05-27 | 2020-01-22 | オリンパス株式会社 | 撮像装置および内視鏡 |
US10466576B2 (en) * | 2017-10-20 | 2019-11-05 | Himax Technologies Limited | Method for controlling projector and associated electronic device |
US10340306B1 (en) * | 2018-02-08 | 2019-07-02 | Semiconductor Components Industries, Llc | Semiconductor package with chamfered corners and related methods |
JP6996459B2 (ja) * | 2018-09-06 | 2022-01-17 | 三菱電機株式会社 | 物理量検出センサの製造方法、物理量検出センサ |
CN109917593B (zh) * | 2019-02-22 | 2022-05-13 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置 |
GB2583366B (en) * | 2019-04-25 | 2023-05-24 | Vojo Ip Ltd | System and method of verifying display of visual information |
KR20210016230A (ko) * | 2019-08-02 | 2021-02-15 | 삼성디스플레이 주식회사 | 표시 장치 |
JP2022021100A (ja) | 2020-07-21 | 2022-02-02 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
RU2769232C1 (ru) * | 2021-06-23 | 2022-03-29 | Федеральное государственное автономное образовательное учреждение высшего образования «Национальный исследовательский Томский государственный университет» | Фоточувствительная к инфракрасному излучению структура и способ ее изготовления |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH085566Y2 (ja) * | 1989-07-12 | 1996-02-14 | オリンパス光学工業株式会社 | 固体撮像装置 |
JP2001257334A (ja) * | 2000-03-10 | 2001-09-21 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2631287B2 (ja) * | 1987-06-30 | 1997-07-16 | 日本メクトロン 株式会社 | 混成多層回路基板の製造法 |
JPH04370958A (ja) | 1991-06-20 | 1992-12-24 | Hitachi Ltd | 半導体基板、これを用いた半導体集積回路装置および半導体基板の製造方法 |
US6262477B1 (en) * | 1993-03-19 | 2001-07-17 | Advanced Interconnect Technologies | Ball grid array electronic package |
JP3161142B2 (ja) * | 1993-03-26 | 2001-04-25 | ソニー株式会社 | 半導体装置 |
US5753529A (en) * | 1994-05-05 | 1998-05-19 | Siliconix Incorporated | Surface mount and flip chip technology for total integrated circuit isolation |
US5677202A (en) * | 1995-11-20 | 1997-10-14 | Eastman Kodak Company | Method for making planar color filter array for image sensors with embedded color filter arrays |
US6013948A (en) * | 1995-11-27 | 2000-01-11 | Micron Technology, Inc. | Stackable chip scale semiconductor package with mating contacts on opposed surfaces |
JP3735163B2 (ja) | 1996-08-02 | 2006-01-18 | オリンパス株式会社 | 固体撮像装置 |
US5689091A (en) * | 1996-09-19 | 1997-11-18 | Vlsi Technology, Inc. | Multi-layer substrate structure |
US6117705A (en) * | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
JP3724110B2 (ja) * | 1997-04-24 | 2005-12-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5808873A (en) * | 1997-05-30 | 1998-09-15 | Motorola, Inc. | Electronic component assembly having an encapsulation material and method of forming the same |
FR2765398B1 (fr) * | 1997-06-25 | 1999-07-30 | Commissariat Energie Atomique | Structure a composant microelectronique en materiau semi-conducteur difficile a graver et a trous metallises |
KR100244965B1 (ko) * | 1997-08-12 | 2000-02-15 | 윤종용 | 인쇄회로기판과 볼 그리드 어레이 패키지의 제조 방법 |
US5962810A (en) * | 1997-09-09 | 1999-10-05 | Amkor Technology, Inc. | Integrated circuit package employing a transparent encapsulant |
JPH11186294A (ja) * | 1997-10-14 | 1999-07-09 | Sumitomo Metal Smi Electron Devices Inc | 半導体パッケージ及びその製造方法 |
US6020629A (en) * | 1998-06-05 | 2000-02-01 | Micron Technology, Inc. | Stacked semiconductor package and method of fabrication |
JP2000003785A (ja) | 1998-06-15 | 2000-01-07 | Sony Corp | エレクトロルミネッセント・ディスプレイの製造方法 |
US6154285A (en) * | 1998-12-21 | 2000-11-28 | Secugen Corporation | Surface treatment for optical image capturing system |
US6384473B1 (en) * | 2000-05-16 | 2002-05-07 | Sandia Corporation | Microelectronic device package with an integral window |
JP2002094082A (ja) * | 2000-07-11 | 2002-03-29 | Seiko Epson Corp | 光素子及びその製造方法並びに電子機器 |
JP2002057271A (ja) | 2000-08-10 | 2002-02-22 | Matsushita Electric Ind Co Ltd | 半導体装置、およびその製造方法 |
JP4000507B2 (ja) * | 2001-10-04 | 2007-10-31 | ソニー株式会社 | 固体撮像装置の製造方法 |
US7180149B2 (en) * | 2003-08-28 | 2007-02-20 | Fujikura Ltd. | Semiconductor package with through-hole |
JP4542768B2 (ja) * | 2003-11-25 | 2010-09-15 | 富士フイルム株式会社 | 固体撮像装置及びその製造方法 |
JP4271625B2 (ja) * | 2004-06-30 | 2009-06-03 | 株式会社フジクラ | 半導体パッケージ及びその製造方法 |
KR100687069B1 (ko) * | 2005-01-07 | 2007-02-27 | 삼성전자주식회사 | 보호판이 부착된 이미지 센서 칩과 그의 제조 방법 |
JP4463193B2 (ja) | 2005-12-27 | 2010-05-12 | ソニー株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
JP4463194B2 (ja) | 2005-12-27 | 2010-05-12 | ソニー株式会社 | 固体撮像装置および固体撮像装置の製造方法 |
-
2001
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-
2002
- 2002-10-02 KR KR20020060068A patent/KR100932824B1/ko active IP Right Grant
- 2002-10-02 US US10/263,122 patent/US7045870B2/en not_active Expired - Lifetime
-
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- 2005-02-07 US US11/052,187 patent/US7531375B2/en active Active
- 2005-12-16 US US11/303,297 patent/US7187051B2/en not_active Expired - Lifetime
-
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- 2009-09-25 KR KR1020090090990A patent/KR101026282B1/ko active IP Right Grant
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-
2018
- 2018-10-01 US US16/148,064 patent/US20190035837A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH085566Y2 (ja) * | 1989-07-12 | 1996-02-14 | オリンパス光学工業株式会社 | 固体撮像装置 |
JP2001257334A (ja) * | 2000-03-10 | 2001-09-21 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
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US20050146632A1 (en) | 2005-07-07 |
US7531375B2 (en) | 2009-05-12 |
US7045870B2 (en) | 2006-05-16 |
KR101016498B1 (ko) | 2011-02-24 |
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US7187051B2 (en) | 2007-03-06 |
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US20150263051A1 (en) | 2015-09-17 |
KR20090115102A (ko) | 2009-11-04 |
KR100932824B1 (ko) | 2009-12-21 |
KR20090115101A (ko) | 2009-11-04 |
US20130241020A1 (en) | 2013-09-19 |
KR20100126643A (ko) | 2010-12-02 |
JP2003116066A (ja) | 2003-04-18 |
KR100982621B1 (ko) | 2010-09-15 |
US20030080434A1 (en) | 2003-05-01 |
US8410567B2 (en) | 2013-04-02 |
JP4000507B2 (ja) | 2007-10-31 |
KR20090115918A (ko) | 2009-11-10 |
KR101026282B1 (ko) | 2011-03-31 |
US20160372506A1 (en) | 2016-12-22 |
US20070158774A1 (en) | 2007-07-12 |
KR20030029027A (ko) | 2003-04-11 |
US9455286B2 (en) | 2016-09-27 |
US10068938B2 (en) | 2018-09-04 |
US9048352B2 (en) | 2015-06-02 |
US20060091486A1 (en) | 2006-05-04 |
KR101120341B1 (ko) | 2012-02-24 |
KR20090115919A (ko) | 2009-11-10 |
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