US20190035837A1 - Solid image-pickup device with flexible circuit substrate - Google Patents
Solid image-pickup device with flexible circuit substrate Download PDFInfo
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- US20190035837A1 US20190035837A1 US16/148,064 US201816148064A US2019035837A1 US 20190035837 A1 US20190035837 A1 US 20190035837A1 US 201816148064 A US201816148064 A US 201816148064A US 2019035837 A1 US2019035837 A1 US 2019035837A1
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- semiconductor substrate
- transparent plate
- disposed
- sealing agent
- imaging device
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- 239000003795 chemical substances by application Substances 0.000 claims description 27
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- 230000003287 optical effect Effects 0.000 claims description 16
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims 13
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- 238000000034 method Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 16
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- 229920006122 polyamide resin Polymers 0.000 description 1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L2924/0001—Technical content checked by a classifier
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Definitions
- the present invention relates to a solid image-pickup device and a method for manufacturing the solid image-pickup device.
- this invention relates to a technique for manufacturing an improved solid image-pickup device which is compact in size and low in production cost.
- FIG. 6 is a cross sectional side view showing a conventional solid image-pickup device.
- the conventional solid image-pickup device 102 includes a package 104 having an internal recess portion 106 .
- a solid image-pickup element 108 formed by disposing light sensors and the like on a semiconductor substrate is received into the internal recess portion 106 , with its light receiving surface facing upward.
- a plurality of bonding pads 112 are arranged along the edge portions of the surface of the solid image-pickup element. These bonding pads 112 are connected through bonding wires 116 with terminal electrodes 114 of the package 104 .
- Each of the terminal electrodes 114 is connected with one end of one of external terminals 118 inserted through the package 104 , while the other end of such one external terminal 118 is allowed to produce to the outside of the package 104 from the backside thereof.
- a transparent plate 120 which is provided to protect the solid image-pickup element 108 in order to ensure its reliability.
- the transparent plate 120 is adhesively fixed on the package 104 above the recess portion 106 , so as to ensure an airtight state within the recess portion 106 of the package 104 .
- the solid image-pickup device 102 which serves as a main component to be incorporated into each of these apparatus, is usually strongly required to be made compact in size and low in production cost.
- the present invention has been accomplished in order to solve the aforementioned problem, and it is an object of the invention to provide an improved solid image-pickup device which is compact in size and low in production cost, as well as to provide a method for manufacturing such an improved solid image-pickup device.
- an improved solid image-pickup device including a semiconductor substrate having a plurality of light sensors and a plurality of bonding-pads on the surface, a transparent plate fixed on the surface of the semiconductor substrate, the surface of the transparent plate surface facing the light sensors; through holes extending from the lower surfaces of the bonding pads to the back surface of the semiconductor substrate; a first insulating film covering the inner surfaces of the through holes; a second insulating film surrounding at least the openings of the through holes at the back surface of the semiconductor substrate; and an electrically conductive material supplied in the through holes, electrically connected with the lower surfaces of the bonding pads, and exposed from the openings of the through holes.
- a method of manufacturing solid image-pickup devices including a semiconductor substrate having a plurality of light sensors and a plurality of bonding pads on the surface, the method comprising the steps of: bonding a transparent plate to a surface of a semiconductor wafer, the surface including a plurality of semiconductor substrate portions for a plurality of solid image-pickup devices, the transparent plate having a plate surface facing the surface of the semiconductor wafer and having substantially the same size as that of the semiconductor wafer; grinding the back surface of the semiconductor wafer bonded with the transparent plate, to reduce the thickness of the semiconductor wafer; forming through holes extending from the back surface of the semiconductor wafer to the lower surfaces of the bonding pads; forming a first insulating film on the inner surface of each of the through holes; forming a second insulating film on the back surface of the semiconductor wafer so as to surround at least the openings of the through holes; and cutting the semiconductor wafer together with the transparent plate to form a plurality of solid image-pickup devices
- FIG. 1A is a cross sectional side view showing a solid image-pickup device formed according to one embodiment of the present invention.
- FIG. 1B is an enlarged cross sectional view showing portion IB of FIG. 1A .
- FIG. 2 is a plan view showing the solid image-pickup device formed according to the embodiment of the invention.
- FIG. 3 is a side view showing the solid image-pickup device, when viewed from a position under the drawing in FIG. 2 .
- FIG. 4 is a side view showing the solid image-pickup device, when viewed from a position on the right side of the drawing in FIG. 2 .
- FIG. 5 is a back view of the solid image-pickup device formed according to the embodiment of the present invention.
- FIG. 6 is a side view showing a conventional solid image-pickup device.
- FIG. 7A is a cross sectional side view showing a solid image-pickup device formed according to another embodiment of the present invention.
- FIG. 7B is an enlarged cross sectional view showing portion VIIB of FIG. 7A .
- FIG. 1A is a cross sectional side view showing a solid image-pickup device formed according to one embodiment of the present invention.
- FIG. 1B is an enlarged cross sectional view showing portion IB of FIG. 1A .
- FIG. 2 is a plan view showing the solid image-pickup device formed according to the embodiment of the invention.
- FIG. 3 is a side view showing the solid image-pickup device, when viewed from a position under the drawing in FIG. 2 .
- FIG. 4 is a side view showing the solid image-pickup device, when viewed from a position on the right side of the drawing in FIG. 2 .
- FIG. 5 is a back view of the solid image-pickup device formed according to the embodiment of the present invention.
- FIG. 1A and FIG. 1B are cross sectional views taken along IA-IA line in FIG. 2 .
- the solid image-pickup device 2 formed according to the present embodiment comprises a solid image-pickup element 4 , a transparent plate 6 and a flexible circuit substrate 8 .
- the solid image-pickup element 4 includes a plurality of light sensors arranged in an image-pickup area 14 which is rectangular in shape and located in the central area on the surface 12 of a semiconductor substrate 10 , also includes a plurality of bonding pads 16 along the edge portions of the surface of the semiconductor substrate.
- the semiconductor substrate 10 has a thickness of 100 ⁇ m or less, while the transparent plate 6 may be formed by a quartz glass. Both the solid image-pickup element 4 and the transparent plate 6 are rectangular in shape when viewed as plan views, and have the same shape as well as the same size.
- the transparent plate 6 is fixed on the surface 12 of the semiconductor substrate 10 , in a manner such that the two members are caused to face each other and be coincident in their positions.
- the ridge line portions 18 (located opposite to the semiconductor substrate 10 ) of the transparent plate 6 are chamfered, as shown in FIGS. 3 and 4 .
- the semiconductor substrate 10 and the transparent plate 6 are bonded to each other by virtue of a sealing agent 20 .
- the sealing agent 20 is applied to the edge portions of the semiconductor substrate 10 and the transparent plate 6 , extending around the entire image-pickup area 14 .
- a clearance having a thickness corresponding to the thickness of the sealing agent 20 is formed between the surface 12 of the semiconductor substrate 10 and the lower surface of the transparent plate 6 , forming an internal space 22 which is in an airtight state by virtue of the sealing agent.
- the semiconductor substrate 10 is formed with a plurality of through holes 26 , located in positions corresponding to the bonding pads 16 , and extending from the lower surfaces of the bonding pads 16 to the back surface 24 of the semiconductor substrate 10 .
- the diameter of each of the through holes 26 is smaller than that of each of the bonding pads 16
- the internal surface of each through hole is coated with an insulating film 28 .
- an entire area of the back surface 24 of the semiconductor substrate 10 (not including the openings of the through holes 26 ) is coated with an insulating film 30 having a thickness of several microns.
- both the insulating film 28 and the insulating film 30 may be formed by a polyimide resin.
- a flexible circuit substrate 8 is bonded through an adhesive agent 32 to the back surface 24 of the semiconductor substrate 10 , in a manner such that the plate surface of the circuit substrate 8 can face the back surface 24 of the semiconductor substrate 10 .
- a copper wire 34 serving as an external lead wire for the solid image-pickup device 2 is provided on the surface of the flexible circuit substrate 8 .
- the flexible circuit substrate 8 is bonded to the semiconductor substrate 10 , with the copper wire 34 being located on the outside of the device.
- each of the lands 36 is formed with a through hole having a diameter larger than each through hole 26 , and openings having substantially the same diameters are formed in the corresponding positions through the above adhesive agent layer 32 .
- an amount of electrically conductive material 38 which will protrude to the lands 36 is used to fill the through holes 26 of the semiconductor substrate 10 and the through holes of the flexible circuit substrate 8 .
- the electrically conductive material 38 may be formed by hardening an electrically conductive paste.
- the flexible circuit substrate 8 is formed such that its longitudinal direction can be arranged in the lateral direction of the image-pickup device, and that one end thereof is extending to one side of the semiconductor substrate 10 .
- the solid image-pickup device 2 of the present embodiment is constructed in a manner such that the transparent plate 6 is disposed to cover the surface 12 of the semiconductor substrate 10 on which light sensors are arranged, such an arrangement is different from a conventional image-pickup device in which the semiconductor substrate is received into a package.
- the device of the present embodiment when viewed as a plan view, the device of the present embodiment has only a size which is exactly the same as the semiconductor substrate 10 .
- the thickness of the device includes only the thicknesses of the transparent plate 6 and the semiconductor substrate 10 . For this reason, it is possible to greatly reduce the size of the solid image-pickup device 2 , especially the thickness thereof.
- the flexible circuit substrate 8 is disposed to cover the back surface 24 of the solid image-pickup device 2 , and since the bonding pads 16 on the semiconductor substrate 10 are connected with the wire on the flexible circuit substrate 8 by virtue of the electrically conductive material 38 received in the through holes 26 , it is possible to obtain an improved thickness-reduced image-pickup device including an external circuit (flexible circuit substrate 8 ).
- the ridge line portions 18 of the transparent plate 6 are chamfered, when the solid image-pickup device 2 is installed into an optical apparatus and when the transparent plate 6 accidentally bumps against a lens block or the like within the optical apparatus, it is possible to prevent the transparent plate 6 from getting broken off.
- the solid image-pickup device 2 when the solid image-pickup device 2 is installed into a digital still camera or the like, if (for example) reference surfaces 40 , 42 and 44 set on the side surface of the transparent plate 6 are used as the working reference, it is possible to incorporate the solid image-pickup device into the camera in an accurate positioning process with a high precision.
- the reference surfaces 40 and 42 are set on the same side surface 46 of the transparent plate, but mutually separated from each other at a predetermined interval.
- the reference surface 44 as shown in FIG. 4 , is set on the other side surface 48 of the transparent plate, perpendicular to the side surface 46 .
- a precision in positional relation between the side surface of the semiconductor substrate 10 and the image-pickup area 14 can be determined in accordance with a cutting precision when the wafer is cut and individual solid image-pickup devices 2 are obtained. In fact, such a precision can be made at 10 ⁇ m or less. Accordingly, it is possible to carry out the positioning of the image-pickup area 14 with respect to an optical apparatus, with only an extremely small error of 10 ⁇ m or less. Moreover, since it is possible to easily perform the positioning with a high precision, it is allowed to shorten a working time necessary for installing the solid image-pickup device 2 into an optical apparatus.
- the solid image-pickup device 2 having the above-described structure can be manufactured at an extremely low cost, with the use of a method which will be explained in detail below.
- a transparent plate having the same size as that of a semiconductor wafer is bonded (by means of the sealing agent 20 , i.e., an adhesive agent) to the surface of the semiconductor wafer on which semiconductor substrate portions for a plurality of solid image-pickup devices have been formed.
- the sealing agent 20 is applied to either the semiconductor wafer or the transparent plate, corresponding to the respective solid image-pickup devices to be formed on the semiconductor wafer, in a manner such that each image-pickup area 14 is surrounded by the sealing agent, thereby bonding together the semiconductor wafer and transparent plate.
- the sealing agent 20 is hardened by heating or by irradiating with an ultraviolet light.
- the back surface of the semiconductor wafer, on which the transparent plate has been bonded is ground so as to reduce the thickness of the semiconductor wafer to 100 ⁇ m or less.
- the through holes 26 are formed extending from the back surface of the semiconductor wafer to the lower surfaces of the bonding pads 16 .
- it is allowed to employ one of several commonly used processes, such as a process using a laser, a process using a photolithography technique or the like.
- each through hole 26 is coated with an insulating film 28 formed by a polyamide resin, while the back surface 24 (not including the openings of the through holes 26 ) of the semiconductor wafer is coated with an insulating film 30 .
- the insulating film 30 may be a polyimide tape.
- the semiconductor wafer along with the transparent plate are cut into several smaller portions corresponding to the respective solid image-pickup devices, thereby individually obtaining solid image-pickup devices.
- the semiconductor wafer together with the transparent plate are cut along these grooves, it is possible to obtain a plurality of solid image-pickup devices each having such a transparent plate that its ridge line portions have been chamfered.
- a flexible circuit substrate 8 is bonded to the back surface 24 of each small semiconductor wafer, while the through holes 26 are filled with an electrically conductive paste which is then heated so as to be hardened, thereby rendering the bonding pads 16 of the semiconductor substrate 10 to be electrically connected with the copper wire 34 of the flexible circuit substrate 8 .
- the method of the present invention for manufacturing the solid image-pickup element and the solid image-pickup device should not be limited to the above-described example. In fact, it is also possible to carry out one of some other methods without departing from the scope prescribed by the spirit of the present invention.
- each flexible circuit substrate 8 is bonded to the back surface 24 of each semiconductor substrate 10 , it is also allowed not to use the flexible circuit substrate 8 . Namely, it is effective that after the back surface of the semiconductor substrate 10 is subjected to an insulating treatment, bumps or the like are formed on the openings of the through holes 26 .
- FIG. 1 indicates that the sealing agent is applied to the edge portions of the semiconductor substrate and the transparent plate in a manner such that the applied sealing agent extends around the entire image-pickup area
- FIG. 7 which indicates that a light-transmissible material may be used in the sealing agent, and such a sealing agent may be interposed between the entire surface of the semiconductor substrate and the transparent plate.
- the solid image-pickup device of the present invention and the solid image-pickup device manufactured using the method of the present invention are constructed in a manner such that the transparent plate is disposed to cover the surface of the semiconductor substrate on which light sensors have been arranged. Therefore, such an arrangement is different from a conventional structure in which a semiconductor substrate is received into a corresponding package. Namely, when viewed as a plan view, the device of the present invention has only a size which is exactly the same as the semiconductor substrate. Further, the thickness of the device includes the thicknesses of the transparent plate and the semiconductor substrate. For this reason, it is possible to greatly reduce the size of a solid image-pickup device, especially the thickness thereof.
- the flexible circuit substrate is disposed to cover the back surface of the solid image-pickup device, and since the bonding pads on the semiconductor substrate are connected with the wire on the flexible circuit substrate by virtue of the electrically conductive material received in the through holes, it is possible to obtain an improved thickness-reduced image-pickup device including an external circuit.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A solid image-pickup device has a semiconductor substrate, which includes an image-pickup area having a plurality of light sensors arranged thereon. A transparent plate having the same shape and the same size as those of the semiconductor substrate when viewed as a plan view is bonded to the surface of the semiconductor substrate. Also, a through hole extends from the second side of the semiconductor device towards the first side. An electrically conductive material is located in the through hole. Additionally, the electrically conductive material is physically connected to at least a portion of a lower surface of a laminar layer portion comprising at least one conductive layer located at the first side of the semiconductor substrate and is electrically connected to the laminar layer portion.
Description
- This is a Continuation Application of U.S. patent application Serial Number Continuation Application of U.S. patent application Ser. No. 15/251,679, filed on Aug. 30, 2016, which is a Continuation of U.S. patent application Ser. No. 14/727,311, filed on Jun. 1, 2015, now U.S. Pat. No. 9,455,286, issued on Sep. 27, 2016, which is a Continuation of U.S. patent application Ser. No. 13/785,421 filed on Mar. 5, 2013, now U.S. Pat. No. 9,048,352, issued on Jun. 2, 2015, which is a Continuation of U.S. patent application Ser. No. 11/714,878 filed on Mar. 5, 2007, now U.S. Pat. No. 8,410,567 issued on Apr. 2, 2013, which is a Divisional of application Ser. No. 11/303,297 filed on Dec. 16, 2005, now U.S. Pat. No. 7,187,051 issued on Mar. 6, 2007, which is a Continuation of application Ser. No. 10/263,122 filed on Oct. 2, 2002, now U.S. Pat. No. 7,045,870 issued on May 16, 2006, which in turn claims priority from Japanese Application Number 2001-308512 filed in the Japan Patent Office on Oct. 4, 2001, the entire contents of which being incorporated herein by reference.
- The present invention relates to a solid image-pickup device and a method for manufacturing the solid image-pickup device. In particular, this invention relates to a technique for manufacturing an improved solid image-pickup device which is compact in size and low in production cost.
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FIG. 6 is a cross sectional side view showing a conventional solid image-pickup device. - As shown in
FIG. 6 , the conventional solid image-pickup device 102 includes apackage 104 having aninternal recess portion 106. A solid image-pickup element 108 formed by disposing light sensors and the like on a semiconductor substrate is received into theinternal recess portion 106, with its light receiving surface facing upward. Along the edge portions of the surface of the solid image-pickup element, there are arranged a plurality ofbonding pads 112. Thesebonding pads 112 are connected throughbonding wires 116 withterminal electrodes 114 of thepackage 104. Each of theterminal electrodes 114 is connected with one end of one ofexternal terminals 118 inserted through thepackage 104, while the other end of such oneexternal terminal 118 is allowed to produce to the outside of thepackage 104 from the backside thereof. - Above the solid image-
pickup element 108 there is disposed atransparent plate 120 which is provided to protect the solid image-pickup element 108 in order to ensure its reliability. Specifically, thetransparent plate 120 is adhesively fixed on thepackage 104 above therecess portion 106, so as to ensure an airtight state within therecess portion 106 of thepackage 104. - However, with regard to the above-described conventional solid image-pickup device, since the solid image-pickup element 108 (semiconductor substrate) has to be received into each
package 104, an entire size of the solid image-pickup device has to be larger than the solid image-pickup element 108. Moreover, since theexternal terminals 118 are protruding from the backside of thepackage 104, it is impossible to avoid an increase in the thickness of thepackage 104 containing theexternal terminals 118. - Moreover, with regard to the above-described conventional arrangement, since the solid image-
pickup element 108 has to be received into thepackage 104 in order to complete a packaging process, it is necessary to perform an operation in which thebonding pads 112 of the solid image-pickup elements 108 have to be connected with theterminal electrodes 114 of thepackage 104 by way of thebonding wires 116. As a result, it is difficult to ensure a high production efficiency as well as a low production cost. - On the other hand, it is extremely important for a digital still camera, a video camera or a PDA (Personal Digital Assistants) apparatus to be made compact in size and low in cost. For this reason, the solid image-
pickup device 102 which serves as a main component to be incorporated into each of these apparatus, is usually strongly required to be made compact in size and low in production cost. - The present invention has been accomplished in order to solve the aforementioned problem, and it is an object of the invention to provide an improved solid image-pickup device which is compact in size and low in production cost, as well as to provide a method for manufacturing such an improved solid image-pickup device.
- In order to achieve the above object of the present invention, there is provided an improved solid image-pickup device including a semiconductor substrate having a plurality of light sensors and a plurality of bonding-pads on the surface, a transparent plate fixed on the surface of the semiconductor substrate, the surface of the transparent plate surface facing the light sensors; through holes extending from the lower surfaces of the bonding pads to the back surface of the semiconductor substrate; a first insulating film covering the inner surfaces of the through holes; a second insulating film surrounding at least the openings of the through holes at the back surface of the semiconductor substrate; and an electrically conductive material supplied in the through holes, electrically connected with the lower surfaces of the bonding pads, and exposed from the openings of the through holes.
- Further, according to the present invention, there is also provided a method of manufacturing solid image-pickup devices including a semiconductor substrate having a plurality of light sensors and a plurality of bonding pads on the surface, the method comprising the steps of: bonding a transparent plate to a surface of a semiconductor wafer, the surface including a plurality of semiconductor substrate portions for a plurality of solid image-pickup devices, the transparent plate having a plate surface facing the surface of the semiconductor wafer and having substantially the same size as that of the semiconductor wafer; grinding the back surface of the semiconductor wafer bonded with the transparent plate, to reduce the thickness of the semiconductor wafer; forming through holes extending from the back surface of the semiconductor wafer to the lower surfaces of the bonding pads; forming a first insulating film on the inner surface of each of the through holes; forming a second insulating film on the back surface of the semiconductor wafer so as to surround at least the openings of the through holes; and cutting the semiconductor wafer together with the transparent plate to form a plurality of solid image-pickup devices.
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FIG. 1A is a cross sectional side view showing a solid image-pickup device formed according to one embodiment of the present invention. -
FIG. 1B is an enlarged cross sectional view showing portion IB ofFIG. 1A . -
FIG. 2 is a plan view showing the solid image-pickup device formed according to the embodiment of the invention. -
FIG. 3 is a side view showing the solid image-pickup device, when viewed from a position under the drawing inFIG. 2 . -
FIG. 4 is a side view showing the solid image-pickup device, when viewed from a position on the right side of the drawing inFIG. 2 . -
FIG. 5 is a back view of the solid image-pickup device formed according to the embodiment of the present invention. -
FIG. 6 is a side view showing a conventional solid image-pickup device. -
FIG. 7A is a cross sectional side view showing a solid image-pickup device formed according to another embodiment of the present invention. -
FIG. 7B is an enlarged cross sectional view showing portion VIIB ofFIG. 7A . - An embodiment of the present invention will be described in the following with reference to the accompanying drawings.
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FIG. 1A is a cross sectional side view showing a solid image-pickup device formed according to one embodiment of the present invention.FIG. 1B is an enlarged cross sectional view showing portion IB ofFIG. 1A .FIG. 2 is a plan view showing the solid image-pickup device formed according to the embodiment of the invention.FIG. 3 is a side view showing the solid image-pickup device, when viewed from a position under the drawing inFIG. 2 .FIG. 4 is a side view showing the solid image-pickup device, when viewed from a position on the right side of the drawing inFIG. 2 .FIG. 5 is a back view of the solid image-pickup device formed according to the embodiment of the present invention. Specifically,FIG. 1A andFIG. 1B are cross sectional views taken along IA-IA line inFIG. 2 . - As shown in
FIGS. 2 through 5 , the solid image-pickup device 2 formed according to the present embodiment comprises a solid image-pickup element 4, atransparent plate 6 and aflexible circuit substrate 8. - The solid image-
pickup element 4 includes a plurality of light sensors arranged in an image-pickup area 14 which is rectangular in shape and located in the central area on thesurface 12 of asemiconductor substrate 10, also includes a plurality ofbonding pads 16 along the edge portions of the surface of the semiconductor substrate. Thesemiconductor substrate 10 has a thickness of 100 μm or less, while thetransparent plate 6 may be formed by a quartz glass. Both the solid image-pickup element 4 and thetransparent plate 6 are rectangular in shape when viewed as plan views, and have the same shape as well as the same size. Thetransparent plate 6 is fixed on thesurface 12 of thesemiconductor substrate 10, in a manner such that the two members are caused to face each other and be coincident in their positions. - Specifically, the ridge line portions 18 (located opposite to the semiconductor substrate 10) of the
transparent plate 6 are chamfered, as shown inFIGS. 3 and 4 . - As shown in
FIG. 1 , thesemiconductor substrate 10 and thetransparent plate 6 are bonded to each other by virtue of a sealingagent 20. Here, the sealingagent 20 is applied to the edge portions of thesemiconductor substrate 10 and thetransparent plate 6, extending around the entire image-pickup area 14. In this way, corresponding to the central portions of both thesemiconductor substrate 10 and thetransparent plate 6, a clearance having a thickness corresponding to the thickness of the sealingagent 20 is formed between thesurface 12 of thesemiconductor substrate 10 and the lower surface of thetransparent plate 6, forming aninternal space 22 which is in an airtight state by virtue of the sealing agent. - Further, the
semiconductor substrate 10 is formed with a plurality of throughholes 26, located in positions corresponding to thebonding pads 16, and extending from the lower surfaces of thebonding pads 16 to theback surface 24 of thesemiconductor substrate 10. Specifically, the diameter of each of the throughholes 26 is smaller than that of each of thebonding pads 16, and the internal surface of each through hole is coated with an insulatingfilm 28. Moreover, an entire area of theback surface 24 of the semiconductor substrate 10 (not including the openings of the through holes 26) is coated with an insulatingfilm 30 having a thickness of several microns. In practice, both the insulatingfilm 28 and the insulatingfilm 30 may be formed by a polyimide resin. - A
flexible circuit substrate 8 is bonded through anadhesive agent 32 to theback surface 24 of thesemiconductor substrate 10, in a manner such that the plate surface of thecircuit substrate 8 can face theback surface 24 of thesemiconductor substrate 10. Further, acopper wire 34 serving as an external lead wire for the solid image-pickup device 2 is provided on the surface of theflexible circuit substrate 8. In this manner, theflexible circuit substrate 8 is bonded to thesemiconductor substrate 10, with thecopper wire 34 being located on the outside of the device. Further, on theflexible circuit substrate 8 and corresponding to the throughholes 26, there are formed a plurality of lands 36 (seeFIG. 5 ) in connection with thecopper wire 34. Specifically, each of thelands 36 is formed with a through hole having a diameter larger than each throughhole 26, and openings having substantially the same diameters are formed in the corresponding positions through the aboveadhesive agent layer 32. - Then, an amount of electrically
conductive material 38 which will protrude to thelands 36 is used to fill the throughholes 26 of thesemiconductor substrate 10 and the through holes of theflexible circuit substrate 8. In this manner, by way of such an electricallyconductive material 38, thebonding pads 16 of thesemiconductor substrate 10 as well as thelands 36 of theflexible circuit substrate 8 can be electrically connected with thecopper wire 34. Here, in more detail, the electricallyconductive material 38 may be formed by hardening an electrically conductive paste. - In fact, the
flexible circuit substrate 8 is formed such that its longitudinal direction can be arranged in the lateral direction of the image-pickup device, and that one end thereof is extending to one side of thesemiconductor substrate 10. - In this way, since the solid image-pickup device 2 of the present embodiment is constructed in a manner such that the
transparent plate 6 is disposed to cover thesurface 12 of thesemiconductor substrate 10 on which light sensors are arranged, such an arrangement is different from a conventional image-pickup device in which the semiconductor substrate is received into a package. Namely, when viewed as a plan view, the device of the present embodiment has only a size which is exactly the same as thesemiconductor substrate 10. Further, the thickness of the device includes only the thicknesses of thetransparent plate 6 and thesemiconductor substrate 10. For this reason, it is possible to greatly reduce the size of the solid image-pickup device 2, especially the thickness thereof. - Further, since the
flexible circuit substrate 8 is disposed to cover theback surface 24 of the solid image-pickup device 2, and since thebonding pads 16 on thesemiconductor substrate 10 are connected with the wire on theflexible circuit substrate 8 by virtue of the electricallyconductive material 38 received in the throughholes 26, it is possible to obtain an improved thickness-reduced image-pickup device including an external circuit (flexible circuit substrate 8). - Usually, in an apparatus such as digital still camera containing the solid image-pickup device 2, since an optical lens is disposed in front of the solid image-pickup device 2, the apparatus as a whole is likely to become thick in its thickness. For this reason, the fact that it has become possible to produce a thickness-reduced solid image-pickup device 2 is extremely favourable in producing an improved optical apparatus which is thin in its thickness.
- Besides, according to the present embodiment of the invention, since the
ridge line portions 18 of thetransparent plate 6 are chamfered, when the solid image-pickup device 2 is installed into an optical apparatus and when thetransparent plate 6 accidentally bumps against a lens block or the like within the optical apparatus, it is possible to prevent thetransparent plate 6 from getting broken off. - Further, when the solid image-pickup device 2 is installed into a digital still camera or the like, if (for example) reference surfaces 40, 42 and 44 set on the side surface of the
transparent plate 6 are used as the working reference, it is possible to incorporate the solid image-pickup device into the camera in an accurate positioning process with a high precision. Moreover, as shown inFIG. 3 , the reference surfaces 40 and 42 are set on thesame side surface 46 of the transparent plate, but mutually separated from each other at a predetermined interval. However, thereference surface 44, as shown inFIG. 4 , is set on the other side surface 48 of the transparent plate, perpendicular to theside surface 46. In this way, even if the side surfaces of thetransparent plate 6 are used as references, since there are no positional dislocations between the side surfaces of thetransparent plate 6 and the side surface of thesemiconductor substrate 10, it is possible to carry out the positioning of thesemiconductor substrate 10 with a high precision. Further, a precision in positional relation between the side surface of thesemiconductor substrate 10 and the image-pickup area 14 can be determined in accordance with a cutting precision when the wafer is cut and individual solid image-pickup devices 2 are obtained. In fact, such a precision can be made at 10 μm or less. Accordingly, it is possible to carry out the positioning of the image-pickup area 14 with respect to an optical apparatus, with only an extremely small error of 10 μm or less. Moreover, since it is possible to easily perform the positioning with a high precision, it is allowed to shorten a working time necessary for installing the solid image-pickup device 2 into an optical apparatus. - The solid image-pickup device 2 having the above-described structure can be manufactured at an extremely low cost, with the use of a method which will be explained in detail below.
- One example of a method for manufacturing the solid image-pickup device 2 according to the present invention will be described with reference to
FIGS. 1 through 5 . - At first, a transparent plate having the same size as that of a semiconductor wafer is bonded (by means of the sealing
agent 20, i.e., an adhesive agent) to the surface of the semiconductor wafer on which semiconductor substrate portions for a plurality of solid image-pickup devices have been formed. During the bonding process, the sealingagent 20 is applied to either the semiconductor wafer or the transparent plate, corresponding to the respective solid image-pickup devices to be formed on the semiconductor wafer, in a manner such that each image-pickup area 14 is surrounded by the sealing agent, thereby bonding together the semiconductor wafer and transparent plate. Then, the sealingagent 20 is hardened by heating or by irradiating with an ultraviolet light. - Subsequently, the back surface of the semiconductor wafer, on which the transparent plate has been bonded, is ground so as to reduce the thickness of the semiconductor wafer to 100 μm or less.
- Afterwards, the through
holes 26 are formed extending from the back surface of the semiconductor wafer to the lower surfaces of thebonding pads 16. In forming these through holes, it is allowed to employ one of several commonly used processes, such as a process using a laser, a process using a photolithography technique or the like. - Then, the inner surface of each through
hole 26 is coated with an insulatingfilm 28 formed by a polyamide resin, while the back surface 24 (not including the openings of the through holes 26) of the semiconductor wafer is coated with an insulatingfilm 30. Here, the insulatingfilm 30 may be a polyimide tape. - Subsequently, the semiconductor wafer along with the transparent plate are cut into several smaller portions corresponding to the respective solid image-pickup devices, thereby individually obtaining solid image-pickup devices. At this time, if several grooves each having a V-shaped cross section are formed in advance on the surface of the transparent plate before the cutting process is carried out, and if the semiconductor wafer together with the transparent plate are cut along these grooves, it is possible to obtain a plurality of solid image-pickup devices each having such a transparent plate that its ridge line portions have been chamfered.
- Afterwards, a
flexible circuit substrate 8 is bonded to theback surface 24 of each small semiconductor wafer, while the throughholes 26 are filled with an electrically conductive paste which is then heated so as to be hardened, thereby rendering thebonding pads 16 of thesemiconductor substrate 10 to be electrically connected with thecopper wire 34 of theflexible circuit substrate 8. - With the use of the manufacturing method described above, it is not necessary to perform a conventional operation in which semiconductor substrates are individually received into the respective packages to form the respective solid image-pickup devices, while the packages and the semiconductor substrates are connected with each other through the bonding wires. Moreover, since the transparent plate can be bonded to the semiconductor wafer and subsequent processes can be carried out dealing with only the integrally bonded body, it is possible to produce a large number of solid image-pickup devices during each one operation, thereby making it possible to greatly reduce the production cost.
- However, the method of the present invention for manufacturing the solid image-pickup element and the solid image-pickup device should not be limited to the above-described example. In fact, it is also possible to carry out one of some other methods without departing from the scope prescribed by the spirit of the present invention.
- For example, although the above description shows that each
flexible circuit substrate 8 is bonded to theback surface 24 of eachsemiconductor substrate 10, it is also allowed not to use theflexible circuit substrate 8. Namely, it is effective that after the back surface of thesemiconductor substrate 10 is subjected to an insulating treatment, bumps or the like are formed on the openings of the through holes 26. - Further, although the present embodiment shown in
FIG. 1 indicates that the sealing agent is applied to the edge portions of the semiconductor substrate and the transparent plate in a manner such that the applied sealing agent extends around the entire image-pickup area, it is also possible to employ a method shown inFIG. 7 which indicates that a light-transmissible material may be used in the sealing agent, and such a sealing agent may be interposed between the entire surface of the semiconductor substrate and the transparent plate. In this way, especially in a process for manufacturing an image-pickup device which is required to be compact in size, it is not necessary to control the forming position of the sealing agent with respect to an image-pickup area, and in a process of bonding together the semiconductor wafer and the transparent plate, it is allowed to apply the sealing agent to the entire surface of the semiconductor wafer. For this reason, even if it is difficult to control the forming position of the sealing agent as shown in the structure ofFIG. 1 , it is still possible to manufacture the image-pickup device which is compact in size. - As described in the above, the solid image-pickup device of the present invention and the solid image-pickup device manufactured using the method of the present invention, are constructed in a manner such that the transparent plate is disposed to cover the surface of the semiconductor substrate on which light sensors have been arranged. Therefore, such an arrangement is different from a conventional structure in which a semiconductor substrate is received into a corresponding package. Namely, when viewed as a plan view, the device of the present invention has only a size which is exactly the same as the semiconductor substrate. Further, the thickness of the device includes the thicknesses of the transparent plate and the semiconductor substrate. For this reason, it is possible to greatly reduce the size of a solid image-pickup device, especially the thickness thereof.
- Further, since the flexible circuit substrate is disposed to cover the back surface of the solid image-pickup device, and since the bonding pads on the semiconductor substrate are connected with the wire on the flexible circuit substrate by virtue of the electrically conductive material received in the through holes, it is possible to obtain an improved thickness-reduced image-pickup device including an external circuit.
- As a result, it is not necessary to perform a conventional operation in which semiconductor substrates are individually received into the packages corresponding to the respective solid image-pickup devices, while the packages and the semiconductor substrates are connected with each other through the bonding wires. Moreover, since the transparent plate can be bonded to the semiconductor wafer, and subsequent processes can be carried out with respect to the integrally bonded body, it is possible to produce a large number of solid image-pickup devices during each one operation, thereby making it possible to greatly reduce the production cost.
Claims (20)
1. An imaging device, comprising:
a semiconductor substrate having a first side as a light incident side and a second side opposite the first side;
an image pick-up area disposed in a central area of the semiconductor substrate and having at least one light sensor;
at least one through hole disposed in an edge area of the semiconductor substrate and extending from the second side towards the first side;
a transparent plate disposed along the first side;
a cavity disposed between the transparent plate and the image pick-up area, and a disposed over the central area of the semiconductor substrate;
an insulating film covering inner side surfaces of the at least one through hole; and
an electrically conductive material disposed in the through hole so as to cover inner side surfaces of the insulating film, wherein the electrically conductive material is physically connected to at least a portion of a wiring located on the second side and is electrically connected to the wiring.
2. The imaging device according to claim 1 , wherein the transparent plate has substantially the same shape and substantially the same size as the semiconductor substrate from a plan view perspective.
3. The imaging device according to claim 1 , wherein the transparent plate is fixed over the semiconductor substrate with a sealing agent disposed between the transparent plate and the semiconductor substrate, the sealing agent being disposed over the edge area of the semiconductor substrate, thus forming the cavity surrounded by said sealing agent and being sealed airtight.
4. The imaging device according to claim 1 , wherein the transparent plate is fixed over the semiconductor substrate with a sealing agent disposed between the transparent plate and the semiconductor substrate, the sealing agent being disposed over both the edge area and the central area of the semiconductor substrate, thus filling the cavity with the sealing agent.
5. The imaging device according to claim 1 , wherein a portion of the electrically conductive material covers a portion of the second side.
6. The imaging device according to claim 1 , wherein the transparent plate is made of a glass.
7. The imaging device according to claim 1 , wherein the through hole has a depth of 100 μm or less.
8. The imaging device according to claim 1 , wherein the wiring is an external lead wire for the imaging device.
9. The imaging device according to claim 1 , further comprising a non-conductive material disposed between the wiring and the semiconductor substrate.
10. The imaging device according to claim 1 , wherein the insulating film extends along the second side of the semiconductor substrate.
11. An optical apparatus comprising:
a lens block; and
an imaging device including:
a semiconductor substrate having a first side as a light incident side and a second side opposite the first side;
an image pick-up area disposed in a central area of the semiconductor substrate and having at least one light sensor;
at least one through hole disposed in an edge area of the semiconductor substrate and extending from the second side towards the first side;
a transparent plate disposed along the first side;
a cavity disposed between the transparent plate and the image pick-up area, and a disposed over the central area of the semiconductor substrate;
an insulating film covering inner side surfaces of the at least one through hole; and
an electrically conductive material disposed in the through hole so as to cover inner side surfaces of the insulating film, wherein the electrically conductive material is physically connected to at least a portion of a wiring located on the second side and is electrically connected to the wiring.
12. The optical apparatus according to claim 11 , wherein the transparent plate has substantially the same shape and substantially the same size as the semiconductor substrate from a plan view perspective.
13. The optical apparatus according to claim 11 , wherein the transparent plate is fixed over the semiconductor substrate with a sealing agent disposed between the transparent plate and the semiconductor substrate, the sealing agent being disposed over the edge area of the semiconductor substrate, thus forming the cavity surrounded by said sealing agent and being sealed airtight.
14. The optical apparatus according to claim 11 , wherein the transparent plate is fixed over the semiconductor substrate with a sealing agent disposed between the transparent plate and the semiconductor substrate, the sealing agent being disposed over both the edge area and the central area of the semiconductor substrate, thus filling the cavity with the sealing agent.
15. The optical apparatus according to claim 11 , wherein a portion of the electrically conductive material covers a portion of the second side.
16. The optical apparatus according to claim 11 , wherein the transparent plate is made of a glass.
17. The optical apparatus according to claim 11 , wherein the through hole has a depth of 100 μm or less.
18. The optical apparatus according to claim 11 , wherein the wiring is an external lead wire for the imaging device.
19. The optical apparatus according to claim 11 , further comprising a non-conductive material disposed between the wiring and the semiconductor substrate.
20. The optical apparatus according to claim 11 , wherein the insulating film extends along the second side of the semiconductor substrate.
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US11/714,878 US8410567B2 (en) | 2001-10-04 | 2007-03-05 | Solid image-pickup device with flexible circuit substrate |
US13/785,421 US9048352B2 (en) | 2001-10-04 | 2013-03-05 | Solid image-pickup device with flexible circuit substrate |
US14/727,311 US9455286B2 (en) | 2001-10-04 | 2015-06-01 | Solid image-pickup device with through hole passing through substrate |
US15/251,679 US10068938B2 (en) | 2001-10-04 | 2016-08-30 | Solid image-pickup device with flexible circuit substrate |
US16/148,064 US20190035837A1 (en) | 2001-10-04 | 2018-10-01 | Solid image-pickup device with flexible circuit substrate |
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US11/303,297 Expired - Lifetime US7187051B2 (en) | 2001-10-04 | 2005-12-16 | Solid image-pickup device and method for manufacturing the solid image pickup device |
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JP4000507B2 (en) * | 2001-10-04 | 2007-10-31 | ソニー株式会社 | Method for manufacturing solid-state imaging device |
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TWI229435B (en) | 2002-06-18 | 2005-03-11 | Sanyo Electric Co | Manufacture of semiconductor device |
JP4443865B2 (en) | 2002-06-24 | 2010-03-31 | 富士フイルム株式会社 | Solid-state imaging device and manufacturing method thereof |
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JP4510403B2 (en) * | 2003-05-08 | 2010-07-21 | 富士フイルム株式会社 | Camera module and method for manufacturing camera module |
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KR20100126644A (en) | 2010-12-02 |
US7531375B2 (en) | 2009-05-12 |
KR101026282B1 (en) | 2011-03-31 |
KR100982606B1 (en) | 2010-09-15 |
KR101016498B1 (en) | 2011-02-24 |
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US7045870B2 (en) | 2006-05-16 |
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US8410567B2 (en) | 2013-04-02 |
KR20100126643A (en) | 2010-12-02 |
JP2003116066A (en) | 2003-04-18 |
US20070158774A1 (en) | 2007-07-12 |
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