KR100956046B1 - 다공질막의 전구체 조성물 및 그 제조 방법, 다공질막 및 그 제작 방법, 그리고 반도체 장치 - Google Patents
다공질막의 전구체 조성물 및 그 제조 방법, 다공질막 및 그 제작 방법, 그리고 반도체 장치 Download PDFInfo
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- KR100956046B1 KR100956046B1 KR1020077021964A KR20077021964A KR100956046B1 KR 100956046 B1 KR100956046 B1 KR 100956046B1 KR 1020077021964 A KR1020077021964 A KR 1020077021964A KR 20077021964 A KR20077021964 A KR 20077021964A KR 100956046 B1 KR100956046 B1 KR 100956046B1
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- South Korea
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- porous membrane
- precursor composition
- monovalent organic
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D1/00—Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/45—Anti-settling agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/61—Additives non-macromolecular inorganic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/665—Porous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005084206A JP4894153B2 (ja) | 2005-03-23 | 2005-03-23 | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 |
| JPJP-P-2005-00084206 | 2005-03-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20070107788A KR20070107788A (ko) | 2007-11-07 |
| KR100956046B1 true KR100956046B1 (ko) | 2010-05-06 |
Family
ID=37023688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077021964A Expired - Fee Related KR100956046B1 (ko) | 2005-03-23 | 2006-03-17 | 다공질막의 전구체 조성물 및 그 제조 방법, 다공질막 및 그 제작 방법, 그리고 반도체 장치 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090053503A1 (enExample) |
| EP (1) | EP1867687B9 (enExample) |
| JP (1) | JP4894153B2 (enExample) |
| KR (1) | KR100956046B1 (enExample) |
| CN (1) | CN101146874B (enExample) |
| TW (1) | TWI400754B (enExample) |
| WO (1) | WO2006101027A1 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4949692B2 (ja) * | 2006-02-07 | 2012-06-13 | 東京応化工業株式会社 | 低屈折率シリカ系被膜形成用組成物 |
| JP5030478B2 (ja) * | 2006-06-02 | 2012-09-19 | 株式会社アルバック | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 |
| JP5026008B2 (ja) * | 2006-07-14 | 2012-09-12 | 東京応化工業株式会社 | 膜形成組成物 |
| WO2008114835A1 (ja) * | 2007-03-16 | 2008-09-25 | Jsr Corporation | 膜形成用組成物およびシリ力系膜とその形成方法 |
| CN101983223B (zh) * | 2008-04-02 | 2013-06-05 | 三井化学株式会社 | 组合物及其制造方法、多孔质材料及其形成方法、层间绝缘膜、半导体材料、半导体器件以及低折射率表面保护膜 |
| JPWO2011052656A1 (ja) * | 2009-10-27 | 2013-03-21 | 株式会社アルバック | 多孔質膜の前駆体組成物及び多孔質膜の成膜方法 |
| WO2011052657A1 (ja) * | 2009-10-27 | 2011-05-05 | 株式会社 アルバック | 多孔質膜の前駆体組成物及び多孔質膜の成膜方法 |
| JP5785325B2 (ja) * | 2011-06-03 | 2015-09-30 | エア プロダクツ アンド ケミカルズ インコーポレイテッドAir Products And Chemicals Incorporated | 炭素ドープケイ素含有膜を堆積するための組成物及び方法 |
| JP6011364B2 (ja) * | 2013-01-28 | 2016-10-19 | 旭硝子株式会社 | 撥水膜付き基体および輸送機器用物品 |
| KR102344996B1 (ko) * | 2017-08-18 | 2021-12-30 | 삼성전자주식회사 | 전구체 공급 유닛, 기판 처리 장치 및 그를 이용한 반도체 소자의 제조방법 |
| US11443953B2 (en) * | 2018-11-13 | 2022-09-13 | Tokyo Electron Limited | Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning |
| CN117776778B (zh) * | 2023-12-13 | 2026-03-20 | 山西炬华铝业股份有限公司 | 一种蜂窝状堇青石载体及其制备方法 |
| WO2025244979A1 (en) * | 2024-05-20 | 2025-11-27 | Meta Platforms Technologies, Llc | Optical isolation between optical modules |
Citations (1)
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| JP2004292639A (ja) * | 2003-03-27 | 2004-10-21 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
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| US4535350A (en) | 1981-10-29 | 1985-08-13 | National Semiconductor Corporation | Low-cost semiconductor device package and process |
| US4861129A (en) * | 1987-04-17 | 1989-08-29 | Hoechst Celanese Corp. | Inorganic-organic composite compositions exhibiting nonlinear optical response |
| US5717051A (en) * | 1994-09-19 | 1998-02-10 | Kabushiki Kaisha Toshiba | Glass composite material, precursor thereof, nitrogen-containing composite material and optical device |
| US6737118B2 (en) * | 1997-05-28 | 2004-05-18 | Nippon Steel Corporation | Low dielectric constant materials and their production and use |
| US5939141A (en) * | 1997-08-11 | 1999-08-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Waterproof silicone coatings of thermal insulation and vaporization method |
| JP2000077399A (ja) * | 1998-01-21 | 2000-03-14 | Nippon Steel Corp | シリカ系多孔質膜およびその製造方法 |
| JPH11246665A (ja) * | 1998-02-27 | 1999-09-14 | Japan Science & Technology Corp | 自己保持性多孔質シリカ及びその製造方法 |
| US6395651B1 (en) * | 1998-07-07 | 2002-05-28 | Alliedsignal | Simplified process for producing nanoporous silica |
| KR20010031599A (ko) * | 1998-09-30 | 2001-04-16 | 마쯔무라 미노루 | 광촉매 물품과 방담방오 물품 및 방담방오 물품의 제조방법 |
| US6770572B1 (en) * | 1999-01-26 | 2004-08-03 | Alliedsignal Inc. | Use of multifunctional si-based oligomer/polymer for the surface modification of nanoporous silica films |
| US6592980B1 (en) * | 1999-12-07 | 2003-07-15 | Air Products And Chemicals, Inc. | Mesoporous films having reduced dielectric constants |
| US6143360A (en) * | 1999-12-13 | 2000-11-07 | Dow Corning Corporation | Method for making nanoporous silicone resins from alkylydridosiloxane resins |
| KR100677782B1 (ko) * | 2000-01-17 | 2007-02-05 | 제이에스알 가부시끼가이샤 | 절연막 형성용 재료의 제조 방법 |
| TWI250968B (en) * | 2000-04-04 | 2006-03-11 | Asahi Kasei Corp | Coating composition for use in producing a silica insulating thin film and method for producing a silica insulating thin film |
| US6576568B2 (en) * | 2000-04-04 | 2003-06-10 | Applied Materials, Inc. | Ionic additives for extreme low dielectric constant chemical formulations |
| US7265062B2 (en) * | 2000-04-04 | 2007-09-04 | Applied Materials, Inc. | Ionic additives for extreme low dielectric constant chemical formulations |
| JP2002003784A (ja) * | 2000-04-17 | 2002-01-09 | Jsr Corp | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
| JP2002009069A (ja) * | 2000-06-22 | 2002-01-11 | Canon Sales Co Inc | 成膜方法 |
| JP3545364B2 (ja) * | 2000-12-19 | 2004-07-21 | キヤノン販売株式会社 | 半導体装置及びその製造方法 |
| JP2002201415A (ja) * | 2000-12-28 | 2002-07-19 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液、シリカ系被膜の製造方法及び半導体装置 |
| US6406794B1 (en) * | 2001-02-08 | 2002-06-18 | Jsr Corporation | Film-forming composition |
| JP3840127B2 (ja) * | 2001-03-27 | 2006-11-01 | 独立行政法人産業技術総合研究所 | 低誘電率ボラジン−ケイ素系高分子からなる層間絶縁膜及びこれにより構成された半導体装置 |
| US6852367B2 (en) * | 2001-11-20 | 2005-02-08 | Shipley Company, L.L.C. | Stable composition |
| JP2003183575A (ja) * | 2001-12-20 | 2003-07-03 | Mitsui Chemicals Inc | 保存安定性に優れる多孔質シリカフィルム形成用塗布液、該塗布液の製造方法、並びに、均一なメソ孔が規則的に配列された多孔質シリカフィルムの製造方法、該多孔質シリカフィルムおよびその用途 |
| JP3891479B2 (ja) * | 2002-03-19 | 2007-03-14 | 三井化学株式会社 | 表面平滑性に優れる多孔質シリカフィルムの製造方法 |
| JP2003306639A (ja) * | 2002-04-15 | 2003-10-31 | Mitsui Chemicals Inc | 多孔質膜、その製造方法及びその用途 |
| JP2004002579A (ja) * | 2002-06-03 | 2004-01-08 | Sumitomo Chem Co Ltd | 多孔質シリカ膜形成用塗布液 |
| JP3979895B2 (ja) * | 2002-07-23 | 2007-09-19 | 三井化学株式会社 | 多孔質シリカフィルム形成用塗布液の製造方法、該方法により得られた塗布液、並びに撥水性に優れる多孔質シリカフィルム |
| JP4284083B2 (ja) * | 2002-08-27 | 2009-06-24 | 株式会社アルバック | 多孔質シリカ膜の形成方法 |
| JP3884699B2 (ja) * | 2002-11-13 | 2007-02-21 | 信越化学工業株式会社 | 多孔質膜形成用組成物、多孔質膜とその製造方法、層間絶縁膜及び半導体装置 |
| US6699797B1 (en) * | 2002-12-17 | 2004-03-02 | Intel Corporation | Method of fabrication of low dielectric constant porous metal silicate films |
| TWI240959B (en) * | 2003-03-04 | 2005-10-01 | Air Prod & Chem | Mechanical enhancement of dense and porous organosilicate materials by UV exposure |
| JP2004269693A (ja) | 2003-03-10 | 2004-09-30 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物及びその製造方法、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
| JP2004292641A (ja) * | 2003-03-27 | 2004-10-21 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
| JP2004307694A (ja) * | 2003-04-09 | 2004-11-04 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜及び半導体装置。 |
| TWI287530B (en) * | 2003-04-24 | 2007-10-01 | Mitsui Chemicals Inc | Coating solutions for forming porous silica |
-
2005
- 2005-03-23 JP JP2005084206A patent/JP4894153B2/ja not_active Expired - Fee Related
-
2006
- 2006-03-10 TW TW95108281A patent/TWI400754B/zh not_active IP Right Cessation
- 2006-03-17 CN CN2006800093480A patent/CN101146874B/zh not_active Expired - Fee Related
- 2006-03-17 US US11/886,952 patent/US20090053503A1/en not_active Abandoned
- 2006-03-17 KR KR1020077021964A patent/KR100956046B1/ko not_active Expired - Fee Related
- 2006-03-17 EP EP20060729340 patent/EP1867687B9/en not_active Expired - Lifetime
- 2006-03-17 WO PCT/JP2006/305350 patent/WO2006101027A1/ja not_active Ceased
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004292639A (ja) * | 2003-03-27 | 2004-10-21 | Shin Etsu Chem Co Ltd | 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置 |
Non-Patent Citations (2)
| Title |
|---|
| Current Opinion in Colloid & Interface Science Vol.4, pp.420-427(2007). |
| Nature, 417, 813(2002). |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1867687B9 (en) | 2013-09-18 |
| EP1867687B1 (en) | 2013-06-12 |
| EP1867687A1 (en) | 2007-12-19 |
| US20090053503A1 (en) | 2009-02-26 |
| KR20070107788A (ko) | 2007-11-07 |
| WO2006101027A1 (ja) | 2006-09-28 |
| TWI400754B (zh) | 2013-07-01 |
| JP2006265350A (ja) | 2006-10-05 |
| CN101146874B (zh) | 2012-08-15 |
| TW200641994A (en) | 2006-12-01 |
| EP1867687A4 (en) | 2009-06-03 |
| CN101146874A (zh) | 2008-03-19 |
| JP4894153B2 (ja) | 2012-03-14 |
| HK1117187A1 (en) | 2009-01-09 |
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