KR100890232B1 - 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 - Google Patents

포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 Download PDF

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Publication number
KR100890232B1
KR100890232B1 KR1020020013291A KR20020013291A KR100890232B1 KR 100890232 B1 KR100890232 B1 KR 100890232B1 KR 1020020013291 A KR1020020013291 A KR 1020020013291A KR 20020013291 A KR20020013291 A KR 20020013291A KR 100890232 B1 KR100890232 B1 KR 100890232B1
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KR
South Korea
Prior art keywords
group
acid
positive photosensitive
photosensitive composition
substituted
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Expired - Lifetime
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KR1020020013291A
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English (en)
Korean (ko)
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KR20020073095A (ko
Inventor
코다마쿠니히코
아오아이토시아이
Original Assignee
후지필름 가부시키가이샤
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Publication of KR20020073095A publication Critical patent/KR20020073095A/ko
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Publication of KR100890232B1 publication Critical patent/KR100890232B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020020013291A 2001-03-12 2002-03-12 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 Expired - Lifetime KR100890232B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001069052A JP4225699B2 (ja) 2001-03-12 2001-03-12 ポジ型感光性組成物
JPJP-P-2001-00069052 2001-03-12

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020080095610A Division KR100933915B1 (ko) 2001-03-12 2008-09-29 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법

Publications (2)

Publication Number Publication Date
KR20020073095A KR20020073095A (ko) 2002-09-19
KR100890232B1 true KR100890232B1 (ko) 2009-03-25

Family

ID=18927140

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020020013291A Expired - Lifetime KR100890232B1 (ko) 2001-03-12 2002-03-12 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법
KR1020080095610A Expired - Lifetime KR100933915B1 (ko) 2001-03-12 2008-09-29 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020080095610A Expired - Lifetime KR100933915B1 (ko) 2001-03-12 2008-09-29 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법

Country Status (4)

Country Link
US (2) US6844132B2 (https=)
JP (1) JP4225699B2 (https=)
KR (2) KR100890232B1 (https=)
TW (1) TW573228B (https=)

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JP4225699B2 (ja) * 2001-03-12 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
JP2002357905A (ja) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd レジスト組成物
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
JP2004240387A (ja) * 2002-12-10 2004-08-26 Fuji Photo Film Co Ltd ポジ型レジスト組成物
EP1595182B1 (en) * 2003-02-19 2015-09-30 Basf Se Halogenated oxime derivatives and the use thereof as latent acids
US7182738B2 (en) * 2003-04-23 2007-02-27 Marctec, Llc Patient monitoring apparatus and method for orthosis and other devices
US7358408B2 (en) * 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
JP4426526B2 (ja) * 2003-07-17 2010-03-03 ハネウエル・インターナシヨナル・インコーポレーテツド 最新式のマイクロエレクトロニクス用途およびデバイス用の平坦化膜およびそれらの製造方法
JP4612999B2 (ja) * 2003-10-08 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI375121B (en) 2004-06-28 2012-10-21 Fujifilm Corp Photosensitive composition and method for forming pattern using the same
JP4507729B2 (ja) * 2004-07-15 2010-07-21 日産自動車株式会社 タイヤ空気圧モニター装置
JP4406590B2 (ja) * 2004-09-16 2010-01-27 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4406591B2 (ja) * 2004-09-17 2010-01-27 富士フイルム株式会社 レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP4452596B2 (ja) 2004-09-24 2010-04-21 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US20070092829A1 (en) * 2005-10-21 2007-04-26 Christoph Noelscher Photosensitive coating for enhancing a contrast of a photolithographic exposure
US7601480B2 (en) * 2006-12-20 2009-10-13 Az Electronic Materials Usa Corp. Photoactive compounds
JP2009079137A (ja) * 2007-09-26 2009-04-16 Fujifilm Corp 膜形成用組成物及び膜の製造方法
US8084193B2 (en) * 2008-07-12 2011-12-27 International Business Machines Corporation Self-segregating multilayer imaging stack with built-in antireflective properties
JP6049250B2 (ja) * 2010-11-30 2016-12-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤
KR101728820B1 (ko) * 2013-12-12 2017-04-20 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자
CN120465292B (zh) * 2025-07-17 2025-09-23 科一(福建)超纤有限责任公司 一种环保型水性合成革的制备方法及其应用

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JPH11327149A (ja) * 1998-03-17 1999-11-26 Fuji Photo Film Co Ltd ポジ型感光性組成物
WO2000008525A1 (en) * 1998-08-07 2000-02-17 Clariant International Ltd. Radiation-sensitive composition of chemical amplification type
JP2000292917A (ja) * 1999-04-06 2000-10-20 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP2000338673A (ja) * 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
KR20000077438A (ko) * 1999-05-26 2000-12-26 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR20010089148A (ko) * 2000-02-04 2001-09-29 마쯔모또 에이찌 감방사선성 수지 조성물

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Publication number Priority date Publication date Assignee Title
JPH11327149A (ja) * 1998-03-17 1999-11-26 Fuji Photo Film Co Ltd ポジ型感光性組成物
WO2000008525A1 (en) * 1998-08-07 2000-02-17 Clariant International Ltd. Radiation-sensitive composition of chemical amplification type
EP1033624A1 (en) * 1998-08-07 2000-09-06 Clariant International Ltd. Radiation-sensitive composition of chemical amplification type
JP2000292917A (ja) * 1999-04-06 2000-10-20 Tokyo Ohka Kogyo Co Ltd ポジ型レジスト組成物
JP2000338673A (ja) * 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
KR20000077438A (ko) * 1999-05-26 2000-12-26 무네유키 가코우 원자외선 노광용 포지티브 포토레지스트 조성물
KR20010089148A (ko) * 2000-02-04 2001-09-29 마쯔모또 에이찌 감방사선성 수지 조성물

Also Published As

Publication number Publication date
KR20080091748A (ko) 2008-10-14
JP4225699B2 (ja) 2009-02-18
KR20020073095A (ko) 2002-09-19
US20030010748A1 (en) 2003-01-16
JP2002268224A (ja) 2002-09-18
USRE43560E1 (en) 2012-07-31
TW573228B (en) 2004-01-21
US6844132B2 (en) 2005-01-18
KR100933915B1 (ko) 2009-12-28

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