TW573228B - Positive photosensitive compositions - Google Patents

Positive photosensitive compositions Download PDF

Info

Publication number
TW573228B
TW573228B TW91104582A TW91104582A TW573228B TW 573228 B TW573228 B TW 573228B TW 91104582 A TW91104582 A TW 91104582A TW 91104582 A TW91104582 A TW 91104582A TW 573228 B TW573228 B TW 573228B
Authority
TW
Taiwan
Prior art keywords
positive photosensitive
photosensitive compositions
group
item
compositions
Prior art date
Application number
TW91104582A
Other languages
English (en)
Chinese (zh)
Inventor
Kunihiko Kodama
Toshiaki Aoai
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TW573228B publication Critical patent/TW573228B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW91104582A 2001-03-12 2002-03-12 Positive photosensitive compositions TW573228B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001069052A JP4225699B2 (ja) 2001-03-12 2001-03-12 ポジ型感光性組成物

Publications (1)

Publication Number Publication Date
TW573228B true TW573228B (en) 2004-01-21

Family

ID=18927140

Family Applications (1)

Application Number Title Priority Date Filing Date
TW91104582A TW573228B (en) 2001-03-12 2002-03-12 Positive photosensitive compositions

Country Status (4)

Country Link
US (2) US6844132B2 (https=)
JP (1) JP4225699B2 (https=)
KR (2) KR100890232B1 (https=)
TW (1) TW573228B (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4225699B2 (ja) * 2001-03-12 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
JP2002357905A (ja) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd レジスト組成物
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
JP2004240387A (ja) * 2002-12-10 2004-08-26 Fuji Photo Film Co Ltd ポジ型レジスト組成物
EP1595182B1 (en) * 2003-02-19 2015-09-30 Basf Se Halogenated oxime derivatives and the use thereof as latent acids
US7182738B2 (en) * 2003-04-23 2007-02-27 Marctec, Llc Patient monitoring apparatus and method for orthosis and other devices
US7358408B2 (en) * 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
JP4426526B2 (ja) * 2003-07-17 2010-03-03 ハネウエル・インターナシヨナル・インコーポレーテツド 最新式のマイクロエレクトロニクス用途およびデバイス用の平坦化膜およびそれらの製造方法
JP4612999B2 (ja) * 2003-10-08 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI375121B (en) 2004-06-28 2012-10-21 Fujifilm Corp Photosensitive composition and method for forming pattern using the same
JP4507729B2 (ja) * 2004-07-15 2010-07-21 日産自動車株式会社 タイヤ空気圧モニター装置
JP4406590B2 (ja) * 2004-09-16 2010-01-27 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4406591B2 (ja) * 2004-09-17 2010-01-27 富士フイルム株式会社 レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP4452596B2 (ja) 2004-09-24 2010-04-21 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US20070092829A1 (en) * 2005-10-21 2007-04-26 Christoph Noelscher Photosensitive coating for enhancing a contrast of a photolithographic exposure
US7601480B2 (en) * 2006-12-20 2009-10-13 Az Electronic Materials Usa Corp. Photoactive compounds
JP2009079137A (ja) * 2007-09-26 2009-04-16 Fujifilm Corp 膜形成用組成物及び膜の製造方法
US8084193B2 (en) * 2008-07-12 2011-12-27 International Business Machines Corporation Self-segregating multilayer imaging stack with built-in antireflective properties
JP6049250B2 (ja) * 2010-11-30 2016-12-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤
KR101728820B1 (ko) * 2013-12-12 2017-04-20 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자
CN120465292B (zh) * 2025-07-17 2025-09-23 科一(福建)超纤有限责任公司 一种环保型水性合成革的制备方法及其应用

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3949313B2 (ja) * 1998-03-17 2007-07-25 富士フイルム株式会社 ポジ型感光性組成物
US6806022B1 (en) 1998-04-22 2004-10-19 Fuji Photo Film Co., Ltd. Positive photosensitive resin composition
JP3922673B2 (ja) 1998-04-22 2007-05-30 富士フイルム株式会社 ポジ型感光性樹脂組成物及びパターン形成方法
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP3763239B2 (ja) 1999-01-18 2006-04-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物
SG76651A1 (en) 1999-03-31 2000-11-21 Sumitomo Chemical Co Chemical amplification type positive resist
KR100647527B1 (ko) 1999-04-01 2006-11-17 후지 샤신 필름 가부시기가이샤 원자외선 노광용 포지티브 포토레지스트 조성물
JP2000292926A (ja) 1999-04-01 2000-10-20 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP4124907B2 (ja) * 1999-04-06 2008-07-23 東京応化工業株式会社 ポジ型レジスト組成物
US6596458B1 (en) * 1999-05-07 2003-07-22 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
JP2001022070A (ja) 1999-07-07 2001-01-26 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP2001022072A (ja) 1999-07-07 2001-01-26 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP2000338679A (ja) 1999-05-31 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP2000338673A (ja) * 1999-05-26 2000-12-08 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
JP3992882B2 (ja) 1999-06-04 2007-10-17 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP3812622B2 (ja) 1999-09-17 2006-08-23 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4269119B2 (ja) 1999-10-25 2009-05-27 信越化学工業株式会社 レジスト材料及びパターン形成方法
EP1122605A3 (en) * 2000-02-04 2001-09-19 JSR Corporation Radiation-sensitive resin composition
JP3821211B2 (ja) 2000-03-21 2006-09-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR100499304B1 (ko) 2000-03-21 2005-07-04 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 패턴 형성 방법
JP4300383B2 (ja) 2000-04-11 2009-07-22 信越化学工業株式会社 レジスト材料及びパターン形成方法
TWI295284B (https=) 2000-04-27 2008-04-01 Shinetsu Chemical Co
JP4831275B2 (ja) 2000-04-27 2011-12-07 信越化学工業株式会社 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法
JP4544389B2 (ja) 2000-04-28 2010-09-15 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
US6492090B2 (en) 2000-04-28 2002-12-10 Shin-Etsu Chemical Co., Ltd. Polymers, resist compositions and patterning process
JP3880860B2 (ja) 2001-01-22 2007-02-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6815143B2 (en) 2001-01-22 2004-11-09 Shin-Etsu Chemical Co., Ltd. Resist material and pattern forming method
KR100795109B1 (ko) 2001-02-23 2008-01-17 후지필름 가부시키가이샤 포지티브 감광성 조성물
JP4225699B2 (ja) * 2001-03-12 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
JP2002292925A (ja) 2001-03-30 2002-10-09 Kyocera Corp 光プリンタヘッド
JP4257823B2 (ja) 2002-05-27 2009-04-22 パナソニック株式会社 半導体装置および容量測定方法

Also Published As

Publication number Publication date
KR20080091748A (ko) 2008-10-14
JP4225699B2 (ja) 2009-02-18
KR100890232B1 (ko) 2009-03-25
KR20020073095A (ko) 2002-09-19
US20030010748A1 (en) 2003-01-16
JP2002268224A (ja) 2002-09-18
USRE43560E1 (en) 2012-07-31
US6844132B2 (en) 2005-01-18
KR100933915B1 (ko) 2009-12-28

Similar Documents

Publication Publication Date Title
TW573228B (en) Positive photosensitive compositions
JP2004501940A5 (https=)
RU99117921A (ru) Аминосоединение для получения новых производных пиридонкарбоновой кислоты или их солей
JP2004534118A5 (https=)
CN111511749A (zh) 具有大环分子结构的化合物及其用途
JP2005522440A5 (https=)
JPH1010894A5 (https=)
JP2005538719A5 (https=)
KR930016389A (ko) No 신타제 및 시클로옥시게나제의 이중 억제제, 이들의 제조방법 및 이들을 함유하는 치료 조성물
NO20043611L (no) Fremgangsmate for fremstilling av HMG-COA reduktaseinhibitorer
WO2004020430A3 (fr) Derives de dioxane-2-alkylcarbamates, leur preparation et leur application en therapeutique
JP2002527414A5 (https=)
CN111315744A (zh) 杂芳基并四氢吡啶类化合物、其制备方法、药物组合物及应用
JP2021528421A5 (https=)
JP2009511511A5 (https=)
JP2011514426A5 (https=)
CN116096713A (zh) 化合物的固体形式
JP2005146110A5 (https=)
JP2003064306A5 (https=)
JP2005526149A5 (https=)
JP2008506698A5 (https=)
JP2007536395A5 (https=)
JP2019048889A5 (https=)
JP2003177538A5 (https=)
JP2005146204A5 (https=)