KR100890232B1 - 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 - Google Patents
포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 Download PDFInfo
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- KR100890232B1 KR100890232B1 KR1020020013291A KR20020013291A KR100890232B1 KR 100890232 B1 KR100890232 B1 KR 100890232B1 KR 1020020013291 A KR1020020013291 A KR 1020020013291A KR 20020013291 A KR20020013291 A KR 20020013291A KR 100890232 B1 KR100890232 B1 KR 100890232B1
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- acid
- positive photosensitive
- photosensitive composition
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- 0 CCC(C1C(*)C(C2C(C3)C=CC3C22)C2(C)C2C1)[C@@]2C(C)(C)C Chemical compound CCC(C1C(*)C(C2C(C3)C=CC3C22)C2(C)C2C1)[C@@]2C(C)(C)C 0.000 description 16
- NECLQTPQJZSWOE-UHFFFAOYSA-N C(CC1)CCC11CCCCC1 Chemical compound C(CC1)CCC11CCCCC1 NECLQTPQJZSWOE-UHFFFAOYSA-N 0.000 description 1
- AXMYVMAUNWBWQJ-UHFFFAOYSA-N CC(C(C)(C)C)C(OC1C(C)(CC2)C(C)(C)C2C1)=O Chemical compound CC(C(C)(C)C)C(OC1C(C)(CC2)C(C)(C)C2C1)=O AXMYVMAUNWBWQJ-UHFFFAOYSA-N 0.000 description 1
- WEPDZDWCGZSUJN-GNRIBBGQSA-N CC(C)C(C)(C)C(N[C@H]1C(C)C(C2)C(C)(C)[C@@H]2C1)=O Chemical compound CC(C)C(C)(C)C(N[C@H]1C(C)C(C2)C(C)(C)[C@@H]2C1)=O WEPDZDWCGZSUJN-GNRIBBGQSA-N 0.000 description 1
- IZZJYQDCQSCRAE-UHFFFAOYSA-N CC(C)CC(C)C(OC1(C)C(C2)C(CCC3)C3C2C1)=O Chemical compound CC(C)CC(C)C(OC1(C)C(C2)C(CCC3)C3C2C1)=O IZZJYQDCQSCRAE-UHFFFAOYSA-N 0.000 description 1
- KQEJQCLGQWIKRD-UHFFFAOYSA-N CC(C)CCCC(C)(C)C(CCC1)C1C(C)(COC(C(C)(C)CC(C)C)=O)O Chemical compound CC(C)CCCC(C)(C)C(CCC1)C1C(C)(COC(C(C)(C)CC(C)C)=O)O KQEJQCLGQWIKRD-UHFFFAOYSA-N 0.000 description 1
- JEXDZLFFMBHQDZ-UHFFFAOYSA-N CCCC1(CC(C2)CC3CC2C1)C3OC(C(C)(C)CC)=O Chemical compound CCCC1(CC(C2)CC3CC2C1)C3OC(C(C)(C)CC)=O JEXDZLFFMBHQDZ-UHFFFAOYSA-N 0.000 description 1
- VGQJCWZVFXHKEW-UUIBSVBUSA-N CC[C@@](CC1)(C2CC1CC(C)C2)OC(C(CC(C)(C)C)C(C)(C)C)=O Chemical compound CC[C@@](CC1)(C2CC1CC(C)C2)OC(C(CC(C)(C)C)C(C)(C)C)=O VGQJCWZVFXHKEW-UUIBSVBUSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Abstract
Description
본 발명의 다른 목적은 보존중에 입자를 거의 발생시키지 않는 포지티브 감광성 조성물을 제공하는 것이다.
본 발명의 포지티브 감광성 조성물은 하기에 상세하게 설명된다.
(A)성분의 산발생제와 조합하여 사용된 산발생 화합물
본 발명에서, 활성광선 또는 방사선으로 노광하여 분해된 화합물은 성분(A)의 산발생제와 병용하여 사용해도 좋다.
아실옥시기로서는 아세톡시기 및 부티릴옥시기 등이 예시되고, A로 나타낸 상기 다환 또는 단환형의 탄화수소기 중에서 다환 또는 단환형 지환식 부분의 대표적인 구조의 구체예를 하기에 나타낼 것이다.
공단량체의 다른 예는 이타콘산디알킬류(예컨데, 이타콘산디메틸, 이타콘산디에틸 또는 이타콘산디부틸 등), 디알킬말레에이트류(예컨대 디메틸 말레에이트), 푸말레이트류(예컨데, 디부틸푸말레이트), 무수말레인산, 말레이미드, 아크릴로니트릴, 메타크릴로니트릴 및 말레오니트릴이 예시된다.
프로필렌 글리콜 모노메틸 에테르와 프로필렌 글리콜 모노메틸 에테르 아세테이트의혼합물은 본 발명에 사용되는 유기용제의 바람직한 예이다.
Claims (14)
- (A1) 탄소수 2∼4의 불소치환 알칸술폰산의 술포늄염,(A2) 탄소수 2∼4의 불소치환 알칸술폰산의 술포늄염으로서, 상기 (A1)과 방향환의 수가 다른 술포늄염,(B) 단환 또는 다환의 지환탄화수소 구조를 가지며, 방향환을 함유하지 않으며, 산의 작용에 의해 분해하여 알칼리 현상액에서의 용해도가 증대하는 수지,(C) 염기성 화합물, 및(D) 불소 및/또는 실리콘 계면활성제를 포함하는 것을 특징으로 하는 포지티브 감광성 조성물.
- 제1항에 있어서, (E) 히드록실기를 포함하는 용제 및 히드록실기를 포함하지 않는 용제의 혼합물을 더 포함하는 것을 특징으로 하는 포지티브 감광성 조성물.
- 삭제
- 삭제
- 삭제
- 삭제
- 제1항에 있어서, 상기 수지(B)는 (메타)아크릴레이트 구조단위를 함유하는 것을 특징으로 하는 포지티브 감광성 조성물.
- 삭제
- 제1항에 있어서, 염기성 화합물(C)은 이미다졸 구조, 디아자비시클로 구조, 오늄히드록시드 구조 및 오늄카르복실레이트 구조에서 선택된 구조를 갖는 화합물인 것을 특징으로 하는 포지티브 감광성 조성물.
- 삭제
- 삭제
- 제1항에 있어서, 상기 (A1) 및 (A2) 중에서 방향환의 수가 많은 술포늄염이 전체 술포늄염의 50중량% 이하인 것을 특징으로 하는 포지티브 감광성 조성물.
- 제1항에 기재된 포지티브 감광성 조성물에 의해 막을 형성하고, 상기 막을 노광, 현상하는 것을 특징으로 하는 패턴 형성 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00069052 | 2001-03-12 | ||
JP2001069052A JP4225699B2 (ja) | 2001-03-12 | 2001-03-12 | ポジ型感光性組成物 |
Related Child Applications (1)
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KR1020080095610A Division KR100933915B1 (ko) | 2001-03-12 | 2008-09-29 | 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20020073095A KR20020073095A (ko) | 2002-09-19 |
KR100890232B1 true KR100890232B1 (ko) | 2009-03-25 |
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KR1020020013291A KR100890232B1 (ko) | 2001-03-12 | 2002-03-12 | 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 |
KR1020080095610A KR100933915B1 (ko) | 2001-03-12 | 2008-09-29 | 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 |
Family Applications After (1)
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KR1020080095610A KR100933915B1 (ko) | 2001-03-12 | 2008-09-29 | 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법 |
Country Status (4)
Country | Link |
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US (2) | US6844132B2 (ko) |
JP (1) | JP4225699B2 (ko) |
KR (2) | KR100890232B1 (ko) |
TW (1) | TW573228B (ko) |
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US6492090B2 (en) | 2000-04-28 | 2002-12-10 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
JP4544389B2 (ja) | 2000-04-28 | 2010-09-15 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
JP3880860B2 (ja) | 2001-01-22 | 2007-02-14 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
US6815143B2 (en) | 2001-01-22 | 2004-11-09 | Shin-Etsu Chemical Co., Ltd. | Resist material and pattern forming method |
KR100795109B1 (ko) | 2001-02-23 | 2008-01-17 | 후지필름 가부시키가이샤 | 포지티브 감광성 조성물 |
JP4225699B2 (ja) * | 2001-03-12 | 2009-02-18 | 富士フイルム株式会社 | ポジ型感光性組成物 |
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JP4257823B2 (ja) | 2002-05-27 | 2009-04-22 | パナソニック株式会社 | 半導体装置および容量測定方法 |
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2001
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JPH11327149A (ja) * | 1998-03-17 | 1999-11-26 | Fuji Photo Film Co Ltd | ポジ型感光性組成物 |
WO2000008525A1 (fr) * | 1998-08-07 | 2000-02-17 | Clariant International Ltd. | Composition radiosensible du type a amplification chimique |
EP1033624A1 (en) * | 1998-08-07 | 2000-09-06 | Clariant International Ltd. | Radiation-sensitive composition of chemical amplification type |
JP2000292917A (ja) * | 1999-04-06 | 2000-10-20 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物 |
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KR20000077438A (ko) * | 1999-05-26 | 2000-12-26 | 무네유키 가코우 | 원자외선 노광용 포지티브 포토레지스트 조성물 |
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Also Published As
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US20030010748A1 (en) | 2003-01-16 |
KR100933915B1 (ko) | 2009-12-28 |
JP2002268224A (ja) | 2002-09-18 |
USRE43560E1 (en) | 2012-07-31 |
JP4225699B2 (ja) | 2009-02-18 |
US6844132B2 (en) | 2005-01-18 |
KR20080091748A (ko) | 2008-10-14 |
TW573228B (en) | 2004-01-21 |
KR20020073095A (ko) | 2002-09-19 |
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