KR100873549B1 - 평면 안테나 및 플라즈마 처리 장치 - Google Patents
평면 안테나 및 플라즈마 처리 장치 Download PDFInfo
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- KR100873549B1 KR100873549B1 KR1020070010118A KR20070010118A KR100873549B1 KR 100873549 B1 KR100873549 B1 KR 100873549B1 KR 1020070010118 A KR1020070010118 A KR 1020070010118A KR 20070010118 A KR20070010118 A KR 20070010118A KR 100873549 B1 KR100873549 B1 KR 100873549B1
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- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
Abstract
Description
Claims (39)
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- 처리실 내로 마이크로파를 공급함으로써 발생된 플라즈마에 의해 기판을 처리하는 플라즈마 처리 장치에 사용되는 평면 안테나로서, 상기 평면 안테나는 복수의 슬릿을 구비하고, 상기 슬릿은 제 1 슬릿 및 제 2 슬릿의 여러 쌍을 포함하며, 각 쌍은 제 1 슬릿과 상기 제 1 슬릿으로부터 이격되어 있는 제 2 슬릿으로 구성되는평면 안테나.
- 제 21 항에 있어서,각 쌍의 상기 제 1 슬릿 및 제 2 슬릿은 "T"자 형상 또는 "V"자 형상으로 배치되는평면 안테나.
- 제 21 항에 있어서,상기 평면 안테나는 복수의 영역으로 분할되고, 상기 슬릿은 각각의 상기 영역에 형성되는평면 안테나.
- 제 23 항에 있어서,상기 영역 각각은 삼각형 형상, 사각형 형상, 육각형 형상 및 동일한 형상 중 어느 하나의 형상으로 구성되는평면 안테나.
- 제 21 항에 있어서,상기 슬릿은 동심원 또는 소용돌이 형상으로 배열되는평면 안테나.
- 제 21 항에 있어서,상기 평면 안테나의 두께는 1mm 이하인평면 안테나.
- 제 21 항에 있어서,상기 슬릿 쌍은 상기 평면 안테나의 중심으로부터의 거리가 증가할수록 커지도록 구성된평면 안테나.
- 제 27 항에 있어서,상기 평면 안테나의 중심으로부터의 상기 슬릿 쌍의 거리가 2배인 경우, 각각의 상기 슬릿의 크기는 1.2배 내지 2배인평면 안테나.
- 제 21 항에 있어서,상기 제 1 슬릿 및 제 2 슬릿 각각의 길이는 도파관내에서의 마이크로파의 파장의 1/2 내지 자유 공간 파장의 2배의 범위로 설정되는평면 안테나.
- 제 21 항에 있어서,상기 평면 안테나의 둘레부에 방사 요소가 형성되는평면 안테나.
- 플라즈마 처리 장치에 있어서,플라즈마에 의해 기판을 처리하는 챔버와,상기 기판이 배치되는 배치 스테이지와,상기 챔버 내로 마이크로파를 공급하는 평면 안테나와,상기 챔버 내로 가스를 공급하는 가스 도입부와,상기 챔버로부터 가스를 배기하는 진공 장치를 포함하고,상기 평면 안테나는 복수의 슬릿을 구비하며, 상기 슬릿은 제 1 슬릿 및 제 2 슬릿의 쌍을 포함하며, 각 쌍은 제 1 슬릿과, 상기 제 1 슬릿으로부터 이격되어 있는 제 2 슬릿으로 구성되는플라즈마 처리 장치.
- 제 31 항에 있어서,각 쌍의 상기 제 1 슬릿 및 제 2 슬릿은 "T"자 형상 또는 "V"자 형상으로 배치되는플라즈마 처리 장치.
- 제 31 항에 있어서,상기 평면 안테나는 복수의 영역으로 분할되고, 상기 슬릿은 각각의 상기 영역에 형성되는플라즈마 처리 장치.
- 제 33 항에 있어서,상기 영역 각각은 삼각형 형상, 사각형 형상, 육각형 형상 및 동일한 형상 중 어느 하나의 형상으로 구성되는플라즈마 처리 장치.
- 제 31 항에 있어서,상기 슬릿은 동심원 또는 소용돌이 형상으로 배열되는플라즈마 처리 장치.
- 제 31 항에 있어서,상기 평면 안테나의 두께는 1mm 이하인플라즈마 처리 장치.
- 제 31 항에 있어서,상기 제 1 슬릿 및 제 2 슬릿 각각의 길이는 도파관내에서의 마이크로파의 파장의 1/2 내지 자유 공간 파장의 2배의 범위로 설정되는플라즈마 처리 장치.
- 제 31 항에 있어서,상기 평면 안테나의 둘레부에 방사 요소가 형성되는플라즈마 처리 장치.
- 제 31 항에 있어서,상기 기판에 바이어스를 인가하기 위해 고주파 전원이 상기 배치 스테이지에 접속되는플라즈마 처리 장치.
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- 2007-05-17 KR KR1020070048124A patent/KR100985953B1/ko active IP Right Grant
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KR20010093073A (ko) | 2001-10-27 |
KR20100007827A (ko) | 2010-01-22 |
TW526278B (en) | 2003-04-01 |
KR20070032743A (ko) | 2007-03-22 |
KR100953037B1 (ko) | 2010-04-14 |
US7629033B2 (en) | 2009-12-08 |
KR20100075816A (ko) | 2010-07-05 |
KR20090055540A (ko) | 2009-06-02 |
KR20070059036A (ko) | 2007-06-11 |
JP2001274151A (ja) | 2001-10-05 |
US20070254113A1 (en) | 2007-11-01 |
KR100960410B1 (ko) | 2010-05-28 |
KR101061608B1 (ko) | 2011-09-01 |
US20070251453A1 (en) | 2007-11-01 |
KR20110010660A (ko) | 2011-02-01 |
KR100985953B1 (ko) | 2010-10-06 |
KR101116056B1 (ko) | 2012-02-14 |
US20020002948A1 (en) | 2002-01-10 |
KR100738767B1 (ko) | 2007-07-12 |
JP4222707B2 (ja) | 2009-02-12 |
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