KR100693695B1 - 유전판 및 플라즈마 처리 장치 - Google Patents
유전판 및 플라즈마 처리 장치 Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 180
- 238000000034 method Methods 0.000 title claims description 50
- 230000008569 process Effects 0.000 title description 41
- 230000005540 biological transmission Effects 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 11
- 238000004904 shortening Methods 0.000 claims abstract description 7
- 230000002068 genetic effect Effects 0.000 claims 5
- 239000012535 impurity Substances 0.000 abstract description 12
- 238000009832 plasma treatment Methods 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 125
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 32
- 239000000758 substrate Substances 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 238000001816 cooling Methods 0.000 description 18
- 238000002347 injection Methods 0.000 description 18
- 239000007924 injection Substances 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- 239000012495 reaction gas Substances 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 230000001105 regulatory effect Effects 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000000498 cooling water Substances 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910017840 NH 3 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000009827 uniform distribution Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (10)
- 플라즈마 처리 장치의 처리실과, 플라즈마 처리에 필요한 마이크로파를 안내하는 슬롯 전극 사이에 배치 가능한 유전판에 있어서,상기 유전판의 두께(H)는 상기 마이크로파의 투과로 인한 상기 유전판의 유리가 최소화되도록 상기 유전판내의 상기 마이크로파의 파장(λ)과 사전설정된 관계를 가지며, 상기 파장(λ)은 λ=λOn의 관계를 가지며, 여기서 λO는 진공중의 상기 마이크로파의 파장이며, n은 n=1/(εt)l/2에 의해 표현되는 상기 유전판의 파장 단축율이며, εt는 진공에서 상기 유전판의 비유전율인유전판.
- 제 1 항에 있어서,상기 유전판의 두께(H)와 파장(λ)의 사전설정된 관계는 0.5λ< H < 0.75λ에 의해 표현되는유전판.
- 제 2 항에 있어서,상기 유전판의 두께(H)는 0.6λ≤H ≤0.7λ에 의해 표현되는 관계를 만족시키는유전판.
- 제 1 항에 있어서,상기 유전판의 두께(H)와 파장(λ)의 사전설정된 관계는 0.3λ< H < 0.4λ에 의해 표현되는유전판.
- 제 1 항에 있어서,상기 유전판의 두께(H)와 파장(λ)의 사전설정된 관계는 (0.1+0.5N)λ≤ H ≤(0.2+0.5N)λ 및 (0.3+0.5N)λ≤ H ≤(0.4+0.5N)λ의 관계중 어느 하나에 의해 표현되며, 여기서 N은 정수인유전판.
- 플라즈마 처리 장치에 있어서,피처리체에 플라즈마 처리가 수행되는 처리실과,상기 처리실에 플라즈마를 생성하도록 상기 처리실로 도입된 마이크로파를 안내하는 복수개의 슬릿을 갖는 슬롯 전극과,상기 슬롯 전극과 상기 처리실 사이에 배치되는 유전판을 포함하며, 상기 유전판의 두께(H)는 상기 마이크로파의 투과로 인한 상기 유전판의 유리가 최소화되도록 상기 유전판내의 상기 마이크로파의 파장(λ)과 사전설정된 관계를 가지며, 상기 파장(λ)은 λ=λOn의 관계를 가지며, 여기서 λO는 진공중의 상기 마이크로파의 파장이며, n은 n=1/(εt)l/2에 의해 표현되는 상기 유전판의 파장 단축율이며, εt는 진공에서 상기 유전판의 비유전율인플라즈마 처리 장치.
- 제 6 항에 있어서,상기 유전판의 두께(H)와 파장(λ)의 사전설정된 관계는 0.5λ< H < 0.75λ에 의해 표현되는플라즈마 처리 장치.
- 제 7 항에 있어서,상기 유전판의 두께(H)는 0.6λ≤H ≤0.7λ에 의해 표현되는 관계를 만족시키는플라즈마 처리 장치.
- 제 6 항에 있어서,상기 유전판의 두께(H)와 파장(λ)의 사전설정된 관계는 0.3λ< H < 0.4λ에 의해 표현되는플라즈마 처리 장치.
- 제 6 항에 있어서,상기 유전판의 두께(H)와 파장(λ)의 사전설정된 관계는 (0.1+0.5N)λ≤ H ≤(0.2+0.5N)λ 및 (0.3+0.5N)λ≤ H ≤(0.4+0.5N)λ의 관계중 어느 하나에 의해 표현되며, 여기서 N은 정수인플라즈마 처리 장치.
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Application Number | Priority Date | Filing Date | Title |
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JP2000085264A JP4849705B2 (ja) | 2000-03-24 | 2000-03-24 | プラズマ処理装置、プラズマ生成導入部材及び誘電体 |
JP2000-085264 | 2000-03-24 |
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KR20010093072A KR20010093072A (ko) | 2001-10-27 |
KR100693695B1 true KR100693695B1 (ko) | 2007-03-09 |
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US (1) | US6372084B2 (ko) |
JP (1) | JP4849705B2 (ko) |
KR (1) | KR100693695B1 (ko) |
TW (1) | TW583343B (ko) |
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JP2000021870A (ja) * | 1998-06-30 | 2000-01-21 | Tokyo Electron Ltd | プラズマ処理装置 |
JP4222707B2 (ja) * | 2000-03-24 | 2009-02-12 | 東京エレクトロン株式会社 | プラズマ処理装置及び方法、ガス供給リング及び誘電体 |
JP4504511B2 (ja) * | 2000-05-26 | 2010-07-14 | 忠弘 大見 | プラズマ処理装置 |
JP3872650B2 (ja) * | 2000-09-06 | 2007-01-24 | 東京エレクトロン株式会社 | プラズマ処理装置及び方法 |
JP5010781B2 (ja) * | 2001-03-28 | 2012-08-29 | 忠弘 大見 | プラズマ処理装置 |
JP4236882B2 (ja) * | 2001-08-01 | 2009-03-11 | 東京エレクトロン株式会社 | ガス処理装置およびガス処理方法 |
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JP4147017B2 (ja) * | 2001-10-19 | 2008-09-10 | 東京エレクトロン株式会社 | マイクロ波プラズマ基板処理装置 |
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JP3723783B2 (ja) | 2002-06-06 | 2005-12-07 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3677017B2 (ja) * | 2002-10-29 | 2005-07-27 | 東京エレクトロン株式会社 | スロットアレイアンテナおよびプラズマ処理装置 |
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JP3838397B2 (ja) * | 1997-12-02 | 2006-10-25 | 忠弘 大見 | 半導体製造方法 |
JP2000058294A (ja) * | 1998-08-07 | 2000-02-25 | Furontekku:Kk | プラズマ処理装置 |
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US6372084B2 (en) | 2002-04-16 |
US20010050059A1 (en) | 2001-12-13 |
JP2001274149A (ja) | 2001-10-05 |
KR20010093072A (ko) | 2001-10-27 |
TW583343B (en) | 2004-04-11 |
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