KR100854004B1 - 낮은 마이크로파이프 밀도를 가지는 100 ㎜ 실리콘카바이드 웨이퍼 - Google Patents

낮은 마이크로파이프 밀도를 가지는 100 ㎜ 실리콘카바이드 웨이퍼 Download PDF

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KR100854004B1
KR100854004B1 KR1020077007642A KR20077007642A KR100854004B1 KR 100854004 B1 KR100854004 B1 KR 100854004B1 KR 1020077007642 A KR1020077007642 A KR 1020077007642A KR 20077007642 A KR20077007642 A KR 20077007642A KR 100854004 B1 KR100854004 B1 KR 100854004B1
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silicon carbide
wafer
seed
crucible
crystal
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KR20070088561A (ko
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아드리안 파월
마크 브래디
로버트 타일러 레오나르드
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크리 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020077007642A 2004-10-04 2005-09-27 낮은 마이크로파이프 밀도를 가지는 100 ㎜ 실리콘카바이드 웨이퍼 Expired - Lifetime KR100854004B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/957,807 2004-10-04
US10/957,807 US7314521B2 (en) 2004-10-04 2004-10-04 Low micropipe 100 mm silicon carbide wafer

Publications (2)

Publication Number Publication Date
KR20070088561A KR20070088561A (ko) 2007-08-29
KR100854004B1 true KR100854004B1 (ko) 2008-08-26

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KR1020077007642A Expired - Lifetime KR100854004B1 (ko) 2004-10-04 2005-09-27 낮은 마이크로파이프 밀도를 가지는 100 ㎜ 실리콘카바이드 웨이퍼

Country Status (8)

Country Link
US (3) US7314521B2 (https=)
EP (2) EP2487280A1 (https=)
JP (3) JP2008515749A (https=)
KR (1) KR100854004B1 (https=)
CN (2) CN103422174A (https=)
CA (1) CA2581856C (https=)
TW (1) TWI294925B (https=)
WO (1) WO2006041660A2 (https=)

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TW200628643A (en) 2006-08-16
US20080237609A1 (en) 2008-10-02
JP5680269B2 (ja) 2015-03-04
KR20070088561A (ko) 2007-08-29
WO2006041660A2 (en) 2006-04-20
US8618552B2 (en) 2013-12-31
TWI294925B (en) 2008-03-21
JP2013018704A (ja) 2013-01-31
US20070209577A1 (en) 2007-09-13
US8866159B1 (en) 2014-10-21
EP1807558A2 (en) 2007-07-18
WO2006041660A8 (en) 2007-09-07
CA2581856A1 (en) 2006-04-20
CN101084330A (zh) 2007-12-05
JP2008515749A (ja) 2008-05-15
EP1807558B1 (en) 2014-05-14
JP2009078966A (ja) 2009-04-16
EP2487280A1 (en) 2012-08-15
CA2581856C (en) 2011-11-29
US20140291698A1 (en) 2014-10-02
JP6141609B2 (ja) 2017-06-07
WO2006041660A3 (en) 2007-01-11
CN103422174A (zh) 2013-12-04
US7314521B2 (en) 2008-01-01

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