KR100848523B1 - 노광장치 및 노광방법 - Google Patents

노광장치 및 노광방법 Download PDF

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Publication number
KR100848523B1
KR100848523B1 KR1020000069174A KR20000069174A KR100848523B1 KR 100848523 B1 KR100848523 B1 KR 100848523B1 KR 1020000069174 A KR1020000069174 A KR 1020000069174A KR 20000069174 A KR20000069174 A KR 20000069174A KR 100848523 B1 KR100848523 B1 KR 100848523B1
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KR
South Korea
Prior art keywords
optical system
projection optical
substrate
projection
mask
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KR1020000069174A
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English (en)
Korean (ko)
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KR20010051835A (ko
Inventor
야나기하라마사미쯔
가쯔메도모히로
Original Assignee
가부시키가이샤 니콘
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Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020000069174A 1999-11-26 2000-11-21 노광장치 및 노광방법 KR100848523B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP33647299 1999-11-26
JP99-336472 1999-11-26
JP2000-316451 2000-10-17
JP2000316451A JP2001215718A (ja) 1999-11-26 2000-10-17 露光装置及び露光方法

Publications (2)

Publication Number Publication Date
KR20010051835A KR20010051835A (ko) 2001-06-25
KR100848523B1 true KR100848523B1 (ko) 2008-07-25

Family

ID=26575485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000069174A KR100848523B1 (ko) 1999-11-26 2000-11-21 노광장치 및 노광방법

Country Status (4)

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US (1) US6552775B1 (US20040097461A1-20040520-C00035.png)
JP (1) JP2001215718A (US20040097461A1-20040520-C00035.png)
KR (1) KR100848523B1 (US20040097461A1-20040520-C00035.png)
TW (1) TW466585B (US20040097461A1-20040520-C00035.png)

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KR101573107B1 (ko) * 2011-08-24 2015-11-30 캐논 가부시끼가이샤 투영 광학계, 노광 장치, 및 디바이스 제조 방법
KR20160031254A (ko) * 2014-09-12 2016-03-22 금호전기주식회사 노광장치
KR20160055734A (ko) * 2016-04-25 2016-05-18 금호전기주식회사 노광장치

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JP2009194204A (ja) * 2008-02-15 2009-08-27 Nikon Corp 露光装置、露光システムおよびデバイス製造方法
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US9025136B2 (en) * 2008-09-23 2015-05-05 Applied Materials, Inc. System and method for manufacturing three dimensional integrated circuits
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US9507271B1 (en) * 2008-12-17 2016-11-29 Applied Materials, Inc. System and method for manufacturing multiple light emitting diodes in parallel
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KR101573107B1 (ko) * 2011-08-24 2015-11-30 캐논 가부시끼가이샤 투영 광학계, 노광 장치, 및 디바이스 제조 방법
US9229205B2 (en) 2011-08-24 2016-01-05 Canon Kabushiki Kaisha Projection optical system, exposure apparatus, and method of manufacturing device
KR20160031254A (ko) * 2014-09-12 2016-03-22 금호전기주식회사 노광장치
KR101634715B1 (ko) * 2014-09-12 2016-06-29 금호전기주식회사 노광장치
KR20160055734A (ko) * 2016-04-25 2016-05-18 금호전기주식회사 노광장치
KR101678515B1 (ko) * 2016-04-25 2016-11-22 금호전기주식회사 노광장치

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