KR100803717B1 - 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 그보호막 형성 재료로 이루어지는 레지스트 보호막, 및 그레지스트 보호막을 사용한 레지스트 패턴 형성방법 - Google Patents

액침 노광 프로세스용 레지스트 보호막 형성용 재료, 그보호막 형성 재료로 이루어지는 레지스트 보호막, 및 그레지스트 보호막을 사용한 레지스트 패턴 형성방법 Download PDF

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Publication number
KR100803717B1
KR100803717B1 KR1020067003668A KR20067003668A KR100803717B1 KR 100803717 B1 KR100803717 B1 KR 100803717B1 KR 1020067003668 A KR1020067003668 A KR 1020067003668A KR 20067003668 A KR20067003668 A KR 20067003668A KR 100803717 B1 KR100803717 B1 KR 100803717B1
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South Korea
Prior art keywords
resist
group
protective film
liquid
film
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Expired - Fee Related
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KR1020067003668A
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English (en)
Korean (ko)
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KR20060064054A (ko
Inventor
다쿠 히라야마
고타로 엔도
마사아키 요시다
가즈마사 와키야
Original Assignee
도오꾜오까고오교 가부시끼가이샤
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Publication of KR20060064054A publication Critical patent/KR20060064054A/ko
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Publication of KR100803717B1 publication Critical patent/KR100803717B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020067003668A 2003-08-25 2004-08-25 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 그보호막 형성 재료로 이루어지는 레지스트 보호막, 및 그레지스트 보호막을 사용한 레지스트 패턴 형성방법 Expired - Fee Related KR100803717B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003300666 2003-08-25
JPJP-P-2003-00300666 2003-08-25
JP2003356963A JP4265766B2 (ja) 2003-08-25 2003-10-16 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
JPJP-P-2003-00356963 2003-10-16

Publications (2)

Publication Number Publication Date
KR20060064054A KR20060064054A (ko) 2006-06-12
KR100803717B1 true KR100803717B1 (ko) 2008-02-15

Family

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Family Applications (1)

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KR1020067003668A Expired - Fee Related KR100803717B1 (ko) 2003-08-25 2004-08-25 액침 노광 프로세스용 레지스트 보호막 형성용 재료, 그보호막 형성 재료로 이루어지는 레지스트 보호막, 및 그레지스트 보호막을 사용한 레지스트 패턴 형성방법

Country Status (6)

Country Link
US (1) US20070031755A1 (https=)
EP (1) EP1662323A4 (https=)
JP (1) JP4265766B2 (https=)
KR (1) KR100803717B1 (https=)
TW (1) TW200510495A (https=)
WO (1) WO2005019937A1 (https=)

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