KR100778194B1 - 셀프-인터스티셜 응집 결함이 없는 초크랄스키 실리콘을제조하기 위한 방법 - Google Patents

셀프-인터스티셜 응집 결함이 없는 초크랄스키 실리콘을제조하기 위한 방법 Download PDF

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KR100778194B1
KR100778194B1 KR1020027003800A KR20027003800A KR100778194B1 KR 100778194 B1 KR100778194 B1 KR 100778194B1 KR 1020027003800 A KR1020027003800 A KR 1020027003800A KR 20027003800 A KR20027003800 A KR 20027003800A KR 100778194 B1 KR100778194 B1 KR 100778194B1
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South Korea
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wafer
seconds
defect
defects
time
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KR1020027003800A
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Korean (ko)
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KR20020042688A (ko
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루시아노 물레스태그노
제프리 엘. 리베르트
조세프 씨. 홀제르
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엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020027003800A 1999-09-23 2000-09-18 셀프-인터스티셜 응집 결함이 없는 초크랄스키 실리콘을제조하기 위한 방법 KR100778194B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15572599P 1999-09-23 1999-09-23
US60/155,725 1999-09-23
US17547800P 2000-01-11 2000-01-11
US60/175,478 2000-01-11

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KR20020042688A KR20020042688A (ko) 2002-06-05
KR100778194B1 true KR100778194B1 (ko) 2007-11-27

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KR1020027003800A KR100778194B1 (ko) 1999-09-23 2000-09-18 셀프-인터스티셜 응집 결함이 없는 초크랄스키 실리콘을제조하기 위한 방법

Country Status (7)

Country Link
US (1) US6635587B1 (pt)
EP (1) EP1222325B1 (pt)
JP (1) JP4360770B2 (pt)
KR (1) KR100778194B1 (pt)
DE (1) DE60019780T2 (pt)
TW (1) TW574449B (pt)
WO (1) WO2001021865A1 (pt)

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KR101168655B1 (ko) * 2007-12-28 2012-07-25 삼성코닝정밀소재 주식회사 Ｎ 타입 질화갈륨 웨이퍼의 광학 특성 향상 방법

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US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP1688519A3 (en) 2001-01-26 2007-10-17 MEMC Electronic Materials, Inc. Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
CN1327041C (zh) * 2002-11-12 2007-07-18 Memc电子材料有限公司 用于生长单晶锭的拉晶机和方法
DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
FR3034108A1 (fr) 2015-03-24 2016-09-30 Soitec Silicon On Insulator Methode de reduction de defauts et fabrication de substrat
KR102626492B1 (ko) * 2016-11-14 2024-01-17 신에쓰 가가꾸 고교 가부시끼가이샤 고광전변환효율 태양전지의 제조 방법 및 고광전변환효율 태양전지

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101168655B1 (ko) * 2007-12-28 2012-07-25 삼성코닝정밀소재 주식회사 Ｎ 타입 질화갈륨 웨이퍼의 광학 특성 향상 방법

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DE60019780T2 (de) 2005-10-06
KR20020042688A (ko) 2002-06-05
JP4360770B2 (ja) 2009-11-11
TW574449B (en) 2004-02-01
US6635587B1 (en) 2003-10-21
DE60019780D1 (de) 2005-06-02
JP2003510800A (ja) 2003-03-18
EP1222325B1 (en) 2005-04-27
EP1222325A1 (en) 2002-07-17
WO2001021865A1 (en) 2001-03-29

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