KR100756619B1 - 질화알루미늄 소결체, 반도체 제조용 부재 및 질화알루미늄소결체의 제조 방법 - Google Patents
질화알루미늄 소결체, 반도체 제조용 부재 및 질화알루미늄소결체의 제조 방법 Download PDFInfo
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- KR100756619B1 KR100756619B1 KR1020060026091A KR20060026091A KR100756619B1 KR 100756619 B1 KR100756619 B1 KR 100756619B1 KR 1020060026091 A KR1020060026091 A KR 1020060026091A KR 20060026091 A KR20060026091 A KR 20060026091A KR 100756619 B1 KR100756619 B1 KR 100756619B1
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- Prior art keywords
- aluminum nitride
- nitride sintered
- sintered body
- magnesium
- yttrium
- Prior art date
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 154
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000002245 particle Substances 0.000 claims abstract description 41
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 34
- 239000011777 magnesium Substances 0.000 claims abstract description 34
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 29
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000843 powder Substances 0.000 description 50
- 239000002994 raw material Substances 0.000 description 38
- 238000000034 method Methods 0.000 description 15
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 12
- 239000000395 magnesium oxide Substances 0.000 description 12
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 11
- 238000002156 mixing Methods 0.000 description 10
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 10
- 238000010304 firing Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000011164 primary particle Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004445 quantitative analysis Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 229940075624 ytterbium oxide Drugs 0.000 description 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 2
- 229910000347 yttrium sulfate Inorganic materials 0.000 description 2
- RTAYJOCWVUTQHB-UHFFFAOYSA-H yttrium(3+);trisulfate Chemical compound [Y+3].[Y+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RTAYJOCWVUTQHB-UHFFFAOYSA-H 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UHNWOJJPXCYKCG-UHFFFAOYSA-L magnesium oxalate Chemical compound [Mg+2].[O-]C(=O)C([O-])=O UHNWOJJPXCYKCG-UHFFFAOYSA-L 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- IBSDADOZMZEYKD-UHFFFAOYSA-H oxalate;yttrium(3+) Chemical compound [Y+3].[Y+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O IBSDADOZMZEYKD-UHFFFAOYSA-H 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- -1 that is Chemical compound 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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Abstract
Description
Claims (9)
- 질화알루미늄을 주성분으로 하고, 0.4 내지 2.5 wt%의 마그네슘과, 2.0 내지 5.0 wt%의 이트륨을 함유하며, 평균 입자 직경이 1.0 ㎛ 이하이고, 격자 정수의 a축 길이가 3.1125×10-10 m 이상인 것을 특징으로 하는 질화알루미늄 소결체.
- 삭제
- 제1항에 있어서, 평균 입자 직경이 0.3 ㎛ 이상인 것을 특징으로 하는 질화알루미늄 소결체.
- 제1항에 있어서, 진공 중 200℃에서 인가 전압을 2 kV/mm로 했을 때의 전압 인가 1분 후의 체적 저항율이 1×1015 Ω·cm 이상인 것을 특징으로 하는 질화알루미늄 소결체.
- 제1항에 있어서, 열전도율이 30 W/mK 이상인 것을 특징으로 하는 질화알루미늄 소결체.
- 삭제
- 삭제
- 삭제
- 제1항, 제3항, 제4항 또는 제5항 중 어느 한 항에 기재한 질화알루미늄 소결체에 의해 일부 또는 전부가 구성되어 있는 것을 특징으로 하는 반도체 제조용 부재.
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JP2005090181A JP4987238B2 (ja) | 2005-03-25 | 2005-03-25 | 窒化アルミニウム焼結体、半導体製造用部材及び窒化アルミニウム焼結体の製造方法 |
JPJP-P-2005-00090181 | 2005-03-25 |
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KR20060103146A KR20060103146A (ko) | 2006-09-28 |
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KR1020060026091A KR100756619B1 (ko) | 2005-03-25 | 2006-03-22 | 질화알루미늄 소결체, 반도체 제조용 부재 및 질화알루미늄소결체의 제조 방법 |
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US (1) | US7422992B2 (ko) |
JP (1) | JP4987238B2 (ko) |
KR (1) | KR100756619B1 (ko) |
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JP2007254190A (ja) * | 2006-03-22 | 2007-10-04 | Ngk Insulators Ltd | 窒化アルミニウム焼結体、窒化アルミニウム焼結体の製造方法、及び部材 |
CN101687693A (zh) * | 2007-05-18 | 2010-03-31 | 康宁股份有限公司 | 玻璃微流体装置及其制造方法 |
JP4879929B2 (ja) * | 2008-03-26 | 2012-02-22 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
JP5307671B2 (ja) * | 2008-10-23 | 2013-10-02 | 日本碍子株式会社 | 窒化アルミニウム基複合材料、その製造方法及び半導体製造装置用部材 |
KR101644000B1 (ko) * | 2010-07-26 | 2016-07-29 | 쿄세라 코포레이션 | 정전 척 |
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WO2013111363A1 (ja) * | 2012-01-26 | 2013-08-01 | 京セラ株式会社 | 静電チャック |
KR102347643B1 (ko) * | 2017-05-30 | 2022-01-06 | 교세라 가부시키가이샤 | 질화알루미늄질 소결체 및 반도체 유지 장치 |
KR102339550B1 (ko) * | 2017-06-30 | 2021-12-17 | 주식회사 미코세라믹스 | 질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재 |
JP7213710B2 (ja) * | 2018-03-23 | 2023-01-27 | 日本碍子株式会社 | 複合焼結体、半導体製造装置部材および複合焼結体の製造方法 |
KR102461995B1 (ko) * | 2021-09-17 | 2022-11-03 | 주식회사 미코세라믹스 | 저열전도 샤프트를 구비하는 고온용 서셉터 |
KR102535856B1 (ko) | 2021-11-19 | 2023-05-26 | 주식회사 케이에스엠컴포넌트 | 반도체 제조 장치용 세라믹 히터 |
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- 2006-03-22 KR KR1020060026091A patent/KR100756619B1/ko active IP Right Grant
- 2006-03-24 TW TW095110229A patent/TWI303857B/zh active
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US7422992B2 (en) | 2008-09-09 |
US20060217259A1 (en) | 2006-09-28 |
KR20060103146A (ko) | 2006-09-28 |
TW200723436A (en) | 2007-06-16 |
JP2006273584A (ja) | 2006-10-12 |
JP4987238B2 (ja) | 2012-07-25 |
TWI303857B (en) | 2008-12-01 |
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