JP2006273584A - 窒化アルミニウム焼結体、半導体製造用部材及び窒化アルミニウム焼結体の製造方法 - Google Patents
窒化アルミニウム焼結体、半導体製造用部材及び窒化アルミニウム焼結体の製造方法 Download PDFInfo
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- JP2006273584A JP2006273584A JP2005090181A JP2005090181A JP2006273584A JP 2006273584 A JP2006273584 A JP 2006273584A JP 2005090181 A JP2005090181 A JP 2005090181A JP 2005090181 A JP2005090181 A JP 2005090181A JP 2006273584 A JP2006273584 A JP 2006273584A
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- Prior art keywords
- aluminum nitride
- nitride sintered
- sintered body
- magnesium
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 160
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 35
- 239000011777 magnesium Substances 0.000 claims abstract description 35
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 30
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000843 powder Substances 0.000 claims description 51
- 239000002994 raw material Substances 0.000 claims description 41
- 239000002245 particle Substances 0.000 claims description 37
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 12
- 239000000395 magnesium oxide Substances 0.000 claims description 12
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 12
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 10
- 239000011164 primary particle Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 2
- 238000010304 firing Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000002156 mixing Methods 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004445 quantitative analysis Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229940075624 ytterbium oxide Drugs 0.000 description 2
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 2
- 229910000347 yttrium sulfate Inorganic materials 0.000 description 2
- RTAYJOCWVUTQHB-UHFFFAOYSA-H yttrium(3+);trisulfate Chemical compound [Y+3].[Y+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RTAYJOCWVUTQHB-UHFFFAOYSA-H 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910016523 CuKa Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UHNWOJJPXCYKCG-UHFFFAOYSA-L magnesium oxalate Chemical compound [Mg+2].[O-]C(=O)C([O-])=O UHNWOJJPXCYKCG-UHFFFAOYSA-L 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- IBSDADOZMZEYKD-UHFFFAOYSA-H oxalate;yttrium(3+) Chemical compound [Y+3].[Y+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O IBSDADOZMZEYKD-UHFFFAOYSA-H 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- -1 that is Chemical compound 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- E05D7/00—Hinges or pivots of special construction
- E05D7/08—Hinges or pivots of special construction for use in suspensions comprising two spigots placed at opposite edges of the wing, especially at the top and the bottom, e.g. trunnions
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- E06B3/00—Window sashes, door leaves, or like elements for closing wall or like openings; Layout of fixed or moving closures, e.g. windows in wall or like openings; Features of rigidly-mounted outer frames relating to the mounting of wing frames
- E06B3/32—Arrangements of wings characterised by the manner of movement; Arrangements of movable wings in openings; Features of wings or frames relating solely to the manner of movement of the wing
- E06B3/48—Wings connected at their edges, e.g. foldable wings
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Abstract
【解決手段】本発明に係る窒化アルミニウム焼結体は、窒化アルミニウムを主成分とし、0.4〜2.5wt%のマグネシウムと、2.0〜5.0wt%のイットリウムとを含有し、平均粒径が、1.0μm以下であることを特徴とする。
【選択図】なし
Description
窒化アルミニウム焼結体の平均粒径が、0.3μm以上であることが好ましい。これによれば、高温、高電圧環境において更に高体積抵抗の窒化アルミニウム焼結体を得ることができる。
本実施形態の窒化アルミニウム焼結体は、窒化アルミニウムを主成分とし、マグネシウムを0.4〜2.5wt%、イットリウムを2.0~5.0wt%含み、平均粒径が1.0μm以下である。窒化アルミニウム焼結体に含まれるマグネシウムが0.4wt%未満であると、体積抵抗率が低下してしまう。一方、窒化アルミニウム焼結体に含まれるマグネシウムが2.5wt%を越えると、高温、高電圧環境において高体積抵抗の窒化アルミニウム焼結体を得ることができない。また、窒化アルミニウム焼結体に含まれるマグネシウムが2.5wt%を越えると、大幅に熱伝導率が低下してしまい、窒化アルミニウムの高熱伝導率の特徴が薄れてしまう。また、窒化アルミニウム焼結体に含まれるイットリウムが2.0wt%未満であると、例えば1750℃以下といった低温での焼成において、焼結が不完全になり充分緻密な焼結体が得られない。一方、窒化アルミニウム焼結体に含まれるイットリウムが5.0wt%を越えると、体積抵抗率が低下してしまう。窒化アルミニウム焼結体の平均粒径が、1.0μmを越えると、体積抵抗率が低下してしまう。
このような窒化アルミニウム焼結体は、窒化アルミニウム原料粉末と、酸化マグネシウム換算で0.5〜3.0mol%のマグネシウムと、酸化イットリウム換算で0.5〜1.5mol%のイットリウムとを含む原料粉末を成形し、1750℃以下で焼成する工程によって製造できる。
本実施形態の窒化アルミニウム焼結体は、高温、高電圧環境において高体積抵抗が要求される様々な半導体製造用部材に適用できる。例えば、少なくとも一部を、窒化アルミニウムを主成分とし、0.4〜2.5wt%のマグネシウムと、2.0〜5.0wt%のイットリウムとを含有し、平均粒径が、1.0μm以下である本発明の窒化アルミニウム焼結体で形成し、金属部材が埋設された半導体製造用部材とすることができる。このような半導体製造用部材によれば、適切な高温、高電圧環境において高体積抵抗の特性を有する窒化アルミニウム焼結体を半導体製造用部材として提供することができる。
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなるはずである。
(実施例1〜12、比較例1〜4)
表1に示す組成比となるように、窒化アルミニウム粉末と酸化マグネシウム粉末と酸化イットリウム粉末等を秤量し、混合して原料粉末を作製した。なお、窒化アルミニウムの平均粒径は、0.2μmとした。具体的には、イソプロピルアルコールを溶媒とし、ナイロン製のポット及び玉石を用いて4時間湿式混合した。混合後のスラリーを取り出し、窒素雰囲気中にて110℃で乾燥した。更に、乾燥粉末を450℃で5時間、大気雰囲気中で熱処理し、湿式混合中に混入したカーボン成分を焼失除去し、原料粉末を作製した。なお、調合粉末の比率(mol%)は、窒化アルミニウム 、酸化マグネシウム、酸化イットリウム、酸化イッテルビウム、酸化チタン粉末等とも不純物含有量を無視して算出した割合を示す。
窒化アルミニウム焼結体を加工し得られた(1)〜(8)の評価の結果を表1に示す。
Claims (9)
- 窒化アルミニウムを主成分とし、0.4〜2.5wt%のマグネシウムと、2.0〜5.0wt%のイットリウムとを含有し、平均粒径が、1.0μm以下であることを特徴とする窒化アルミニウム焼結体。
- 格子定数のa軸長が、3.1125×10-10m以上であることを特徴とする請求項1に記載の窒化アルミニウム焼結体。
- 平均粒径が、0.3μm以上であることを特徴とする請求項1又は請求項2に記載の窒化アルミニウム焼結体。
- 真空中、200℃において、印加電圧を2kV/mmとしたときの、電圧印加1分後の体積抵抗率が、1×1015Ω・cm以上であることを特徴とする請求項1〜請求項3のいずれか1項に記載の窒化アルミニウム焼結体。
- 熱伝導率が、30W/mK以上であることを特徴とする請求項1〜請求項4のいずれか1項に記載の窒化アルミニウム焼結体。
- 窒化アルミニウム原料と、酸化マグネシウム換算で0.5〜3.0mol%のマグネシウムと、酸化イットリウム換算で0.5〜1.5mol%のイットリウムとを含む原料粉末を成形し、1750℃以下で焼成する工程を含むことを特徴とする窒化アルミニウム焼結体の製造方法。
- 前記窒化アルミニウム原料の平均一次粒径は、0.5μm以下であることを特徴とする請求項6に記載の窒化アルミニウム焼結体の製造方法。
- 前記窒化アルミニウム原料の比表面積は、7m2/g以上であることを特徴とする請求項6又は請求項7に記載の窒化アルミニウム焼結体の製造方法。
- 請求項1〜請求項5のいずれか1項に記載の窒化アルミニウム焼結体によって、少なくとも一部が構成されていることを特徴とする半導体製造用部材。
Priority Applications (4)
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JP2005090181A JP4987238B2 (ja) | 2005-03-25 | 2005-03-25 | 窒化アルミニウム焼結体、半導体製造用部材及び窒化アルミニウム焼結体の製造方法 |
US11/378,974 US7422992B2 (en) | 2005-03-25 | 2006-03-17 | Aluminum nitride sintered body, semiconductor manufacturing member, and method of manufacturing aluminum nitride sintered body |
KR1020060026091A KR100756619B1 (ko) | 2005-03-25 | 2006-03-22 | 질화알루미늄 소결체, 반도체 제조용 부재 및 질화알루미늄소결체의 제조 방법 |
TW095110229A TWI303857B (en) | 2005-03-25 | 2006-03-24 | Aluminum nitride sintered body, semiconductor manufacturing member, and method of manufacturing aluminum nitride sintered body |
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US7422992B2 (en) | 2008-09-09 |
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US20060217259A1 (en) | 2006-09-28 |
KR20060103146A (ko) | 2006-09-28 |
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