WO2012014873A1 - 静電チャック - Google Patents
静電チャック Download PDFInfo
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- WO2012014873A1 WO2012014873A1 PCT/JP2011/066924 JP2011066924W WO2012014873A1 WO 2012014873 A1 WO2012014873 A1 WO 2012014873A1 JP 2011066924 W JP2011066924 W JP 2011066924W WO 2012014873 A1 WO2012014873 A1 WO 2012014873A1
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- electrostatic chuck
- insulating substrate
- adsorption
- electrode
- mass
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- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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Definitions
- the present invention in film forming apparatuses and etching apparatuses such as PVD apparatuses, CVD apparatuses, ion plating apparatuses, and vapor deposition apparatuses, problems such as the fact that a workpiece such as a silicon wafer for semiconductor use cannot be detached over time occur.
- the present invention relates to an electrostatic chuck used for fixed holding, correction, and conveyance without any problem.
- a flat and smooth finished plate-like body is used to accurately fix a workpiece such as a silicon wafer.
- the surface is forcibly adsorbed on the surface, and an electrostatic chuck using electrostatic attraction force is used as the adsorbing means.
- the electrostatic chuck used in these film forming apparatus and etching apparatus has one main surface (one widest surface) of a plate-shaped insulating substrate made of ceramics as an adsorption surface, and the inside or the other of the insulating substrate.
- a DC voltage is applied to the adsorption electrode, and Coulomb force due to dielectric polarization between the workpiece and Johnson Rabeck force due to minute leakage current, etc.
- the workpiece can be forcibly adsorbed and fixed to the adsorbing surface.
- the electrostatic chuck is provided with lift pins for allowing the workpiece to be detached from the suction surface so as to protrude from the peripheral portion of the suction surface corresponding to the peripheral portion of the workpiece.
- a conventional electrostatic chuck used for plasma processing causes so-called residual adsorption, in which an adsorption force remains even after the application of a DC voltage to the adsorption electrode is canceled.
- This residual adsorption generates fixed charges (holes) in the insulating substrate when electrons are injected from the plasma into the workpiece, and the fixed charges (holes) remain in the insulating substrate even after the DC voltage is turned off. This is due to that.
- the present invention has been made in view of the above-described problems, and an object of the present invention is to provide an electrostatic chuck in which the residual adsorption suppression force is unlikely to deteriorate with time.
- the present invention is an electrostatic chuck including an insulating substrate and an adsorption electrode, wherein the region including at least the upper surface of the insulating substrate includes Mn and a first transition element composed of at least one of Fe and Cr.
- the ratio C2 / C1 of the content C2 (mol) of the first transition element to the content C1 (mol) of the Mn is 1 or more.
- the residual adsorption suppression force does not deteriorate with time in a plasma environment, it is possible to realize an electrostatic chuck in which a workpiece is easily detached.
- FIG. 1 is a view showing an embodiment of the electrostatic chuck of the present invention, wherein (a) is a top view of the electrostatic chuck and (b) is a longitudinal sectional view of the electrostatic chuck and a workpiece.
- the electrostatic chuck 1 in the example shown in FIG. 1 includes an insulating substrate 2 and an adsorption electrode 3.
- the insulating base 2 is formed in a disk shape having the same size as the workpiece A such as a silicon wafer, and the adsorption electrode 3 is embedded in the insulating base 2. .
- a large number of convex portions 6 are provided on one main surface of the insulating base 2, and the protruding ends of the large number of convex portions 6 are flat surfaces.
- the surface is an adsorption surface.
- the number of the convex parts 6 is not limited to the number of patterns shown in the figure.
- the lead electrode 8 is connected to the suction electrode 3, and the suction electrode 3 is connected to the DC power source 9 through the lead wire 8.
- the workpiece A attracted to the attracting surface is electrically connected to the ground directly or by plasma. Thereby, an electrostatic adsorption force is developed between the adsorption electrode 3 and the workpiece A, and adsorption fixation is achieved.
- a gas introduction hole 7 penetrating from the other main surface (lower surface in the drawing) to one main surface (upper surface in the drawing) is provided in the central portion of the insulating base 2. Further, a gas flow path 5 is formed between the convex part 6 and the convex part 6, and the gas flow path 5 and the gas introduction hole 7 communicate with each other.
- a cooling gas such as helium gas is supplied from the gas introduction hole 7 to the space formed by the workpiece and the gas channel 5, so that the gas channel 5 Heat transfer between the workpiece and the workpiece A and between the suction surface and the workpiece A, and the temperature distribution of the workpiece A is controlled to be uniform.
- the peripheral wall 4 is formed along the outer periphery of one main surface of the insulating base 2, and the space formed by the convex portion 6, the workpiece A and the gas flow path 5 is formed. The space is closed, and a large amount of cooling gas supplied from the gas introduction hole 7 is prevented from leaking to the outside.
- the peripheral wall 4 may be installed according to the purpose or may not be installed.
- the peripheral wall 4 may be formed integrally with the insulating base 2 or may be formed separately.
- Examples of the material for forming the insulating substrate 2 include materials starting from aluminum hydroxide purified from bauxite. This material contains a small amount of Mn as an inevitable impurity of Al.
- the region including at least the upper surface of the insulating substrate 2 includes Mn and the first transition composed of at least one of Fe and Cr. It is important that the ratio C2 / C1 of the content C2 (mol) of the first transition element with respect to the content C1 (mol) of Mn is 1 or more.
- the region including the upper surface means, for example, a region having a thickness of 0.2 to 0.5 mm from the upper surface.
- FIG. 2 is a diagram showing a quantitative concept of Mn, Fe, or Cr in the region B indicated by a broken line in FIG.
- This configuration makes it possible to realize an electrostatic chuck in which the workpiece is easily detached because the residual adsorption suppression force does not deteriorate over time in a plasma environment.
- the residual adsorption is manifested on the surface layer of the insulating substrate 2 constituting the electrostatic chuck, that is, the ceramic surface layer containing a small amount of Mn.
- Mn is oxidized from Mn 2+ to Mn 3+ using plasma energy as excitation energy.
- the charge from Mn is used for the reduction of Fe 3+ and Cr 3+ , oxygen vacancies (holes) are generated in the Mn oxide, and these holes become a factor of weak surface current. This surface current appears as residual adsorption.
- the content of the first transition element consisting of at least one of Fe and Cr that accepts charges from Mn is increased as shown in FIG.
- the ratio C2 / C1 of the content C2 of the first transition element to the content C1 of Mn may be set to 1 or more.
- the insulating substrate 2 is mainly composed of at least one of Al 2 O 3 , AlN and Al 2 O 3 —TiO 2 .
- oxygen vacancies generated in the insulating base 2 become charged particles (holes) and a leakage current is likely to occur.
- the adsorption electrode 3 may be provided so as to be exposed on the other main surface (lower surface) of the insulating base 2, but is preferably embedded in the insulating base 2 as shown in the drawing.
- FIG. 3 is a longitudinal sectional view showing another embodiment of the electrostatic chuck of the present invention, and the upper surface side region 21 is the upper surface of the insulating substrate 2 (when the convex portion 6 is formed, the attracting surface).
- the area up to the vicinity of the lower side of the adsorption electrode 3 is an area up to about 0.5 mm below the adsorption electrode 3.
- region 21 contains said 1st transition element, and ratio C2 / C1 of content C2 (mol) of said 1st transition element with respect to content C1 (mol) of Mn is 1 or more. is there.
- the thickness of the upper surface side region 21 is usually 0.2 to 0.5 mm.
- the residual adsorption suppression force does not deteriorate with time in the plasma environment, and the portion (lower surface side region 22) other than this region of the insulating substrate 2 has a low dielectric constant. Because of the loss, it is possible to improve temperature unevenness against soaking. This is because low dielectric loss can be maintained because Fe impurities at the grain boundary are suppressed in the lower surface side region 22 which is a region other than the region involved in the adsorption of the insulating substrate 2.
- the total thickness of the upper surface side region 21 and the lower surface side region 22 is usually 2 to 10 mm, and the thickness of the lower surface side region 22 is larger than that of the upper surface side region 21, so that the thermal uniformity of the insulating substrate itself in a high frequency environment is If the lower surface region 22 has a low dielectric loss, it can be suitably maintained.
- the content of at least one of Fe and Cr is preferably 80 ppm or more. Thereby, the residual adsorption suppression force of the electrostatic chuck 1 is less likely to deteriorate over time.
- MnO serving as a Mn source is generally less than 80 ppm in terms of Mn. Therefore, the first transition element (Fe and Cr in the insulating substrate 2) When the content of at least one of the above is 80 ppm or more, Mn 3+ is more effectively resupplied with electrons from the first transition element.
- the content ratio of the first transition element is not a ratio with respect to the entire insulating base 2 but a predetermined amount only in the upper surface region 21. It is a ratio in volume. This ratio can be obtained by taking out a predetermined portion of the insulating substrate 2 by a known method such as grinding, cutting, and polishing, and measuring the taken-out portion by ICP mass spectrometry (ICP-MS).
- ICP-MS ICP mass spectrometry
- the upper limit of the amount of Fe in the ceramics that is the insulating substrate 2 is preferably 500 ppm or less.
- the dielectric loss (tan ⁇ ) of the insulating substrate 2 can be stabilized to a low level, so that the ceramic heat generation of the insulating substrate in a high-frequency environment can be suppressed, and soaking unevenness (process unevenness) within the adsorption surface can be suppressed. . This is because Fe impurities at grain boundaries in the ceramics are suppressed, and low dielectric loss can be maintained.
- the upper limit of the Fe amount is not a ratio with respect to the entire insulating base 2 but the upper surface side region 21. Only in a given volume.
- a predetermined amount of Al 2 O 3 powder as a main raw material was weighed, and in a ball mill, a solvent such as ion-exchanged water or an organic solvent, an organic dispersant, and a ball made of high purity Al 2 O 3 of 99.6% or more and 24 Mix for 72 Hr by wet grinding.
- a solvent such as ion-exchanged water or an organic solvent, an organic dispersant, and a ball made of high purity Al 2 O 3 of 99.6% or more and 24 Mix for 72 Hr by wet grinding.
- the Al 2 O 3 powder as the main raw material is previously identified for the abundance of Mn, Fe, and Cr by an ICP mass spectrometry (ICP-MS) method or the like.
- ICP-MS ICP mass spectrometry
- the above-mentioned elements are present as oxides such as MnO, Fe 2 O 3 and Cr 2 O 3 in high-purity Al 2 O 3 powder, but especially MnO is about 1 to 5 ppm as Mn element (9 in terms of mole). 0.0 ⁇ 10 ⁇ 9 to 9.2 ⁇ 10 ⁇ 8 mol).
- Fe 2 O 3 or Cr 2 O 3 is added.
- an iron (III) deer special grade manufactured by Kanto Chemical Co., Ltd. is used for Fe 2 O 3
- a chromium (III) deer special grade produced by Kanto Chemical Co., Ltd. is used for Cr 2 O 3, for example.
- a predetermined amount of an organic binder such as polyvinyl alcohol, polyvinyl butyral, and acrylic resin, and a plasticizer and an antifoaming agent as auxiliary organic materials are added to the raw slurry thus pulverized and mixed, and further mixed for 24 to 48 hours.
- the mixed organic-inorganic mixed slurry is formed into a ceramic green sheet having a thickness of 20 to 20000 ⁇ m, particularly 100 to 300 ⁇ m by a doctor blade method, a calender roll method, a press molding method, an extrusion molding method or the like.
- a paste electrode material such as platinum or tungsten for forming the adsorption electrode 3 is printed and formed on the ceramic green sheet forming the insulating substrate 2 by a known screen printing method or the like.
- the ceramic green sheet on which the paste-like electrode material is not printed and the electrode-formed green sheet on which the paste-like electrode material is printed are stacked so that the adsorption electrode 3 is formed at a predetermined position on the insulating substrate 2. And stack. Lamination is performed at a predetermined temperature while applying a pressure equal to or higher than the yield stress value of the ceramic green sheet.
- a pressure application method a known method such as a uniaxial press method or an isotropic press method (dry method, wet method) is used. Apply technology.
- the obtained laminated body is fired in a predetermined temperature and atmosphere to produce an insulating substrate in which an adsorption electrode is embedded or formed on the surface.
- the convex portion 6 on one main surface (upper surface) of the insulating substrate 2
- a known method such as a sand blasting method using a mask, a machining method, or an ultrasonic processing method can be used.
- the convex portion 6 having a height of several ⁇ m to several tens of ⁇ m can be formed in a predetermined pattern shape.
- the electrostatic chuck 1 of the present invention having the structure of FIG. 1 was produced as follows. Specifically, the starting materials for the insulating substrate 2 were the following six materials.
- Al 2 O 3 powder having a purity of 99.6% by mass was used as the material 1.
- the average particle diameter D50 of this Al 2 O 3 powder was 0.5 ⁇ m.
- MgO, SiO 2 , and CaO powders were added as sintering aids to Al 2 O 3 powder with a purity of 99.6% by mass (average particle diameter D50 is 0.5 ⁇ m), and Al 2 O 3 powder was added. 98% by mass, each of MgO, SiO 2 and CaO powders was made into a ratio of 2% by mass in total.
- AlN powder having a purity of 99% by mass was used as material 3.
- the average particle diameter D50 of this AlN powder was 1.2 ⁇ m.
- TiO 2 (average particle diameter D50 is 0.7 ⁇ m) powder is added to 99.6 mass% Al 2 O 3 powder (average particle diameter D50 is 0.5 ⁇ m) powder, and Al 2 O 3 powder is added. 99% by mass and 1% by mass of TiO 2 powder were used as Al 2 O 3 —TiO 2 powder.
- mullite (3Al 2 O 3 ⁇ 2SiO 2 ) powder having a purity of 99% by mass was used as the material 5.
- the average particle diameter D50 of this mullite powder was 0.6 ⁇ m.
- cordierite (2MgO ⁇ 2Al 2 O 3 ⁇ 5SiO 2 ) powder having a purity of 99% by mass was used as the material 6.
- the average particle diameter D50 of this cordierite powder was 0.9 ⁇ m.
- Reagent Fe 2 O 3 or reagent Cr 2 O 3 were added at the time of wet-grinding mixing the above were added Reagent Fe 2 O 3 or reagent Cr 2 O 3 in amounts shown in Table 1.
- Fe 2 O 3 used an iron (III) deer special grade manufactured by Kanto Chemical Co., Ltd.
- Cr 2 O 3 used a chromium (III) deer special grade produced by Kanto Chemical Co., Ltd.
- Each raw material powder was previously identified for the presence of Mn, Fe, and Cr by ICP mass spectrometry (ICP-MS).
- a plasticizer and a binder were added to the wet pulverized mixed slurry.
- 2 parts by mass of DBP and DOP were added to 100 parts by mass of the raw material powder, 12 parts by mass of polyvinyl butyral was converted to solid content in terms of solid content, and the mixture was further wet mixed for 30 hours.
- the mixed organic-inorganic mixed slurry was formed into a ceramic green sheet having a thickness of 200 ⁇ m by a doctor blade method.
- a tungsten paste serving as an adsorption electrode was printed on a ceramic green sheet serving as an insulating substrate by a screen printing method.
- the ceramic green sheet not printed with tungsten paste and the electrode-formed green sheet printed with tungsten paste are overlapped so that the adsorption electrode is formed at a predetermined position on the insulating substrate, and the yield of the green sheet is obtained by uniaxial press method.
- Lamination was performed at a temperature of 80 ° C. or higher while applying a pressure higher than stress, specifically 5 MPa.
- the obtained laminate is placed in a reducing atmosphere at a predetermined temperature (1600 ° C. except for the raw material powders of the materials 3, 5 and 6; 2000 ° C. for the raw material powder of the material 3; 1400 ° C.) for 3 Hr.
- Thickness processing is performed on the obtained insulating substrate by rotary grinding, gas introduction holes are formed by machining, and a convex portion having a height of 12 ⁇ m is formed in a predetermined pattern by sand blasting using a mask on the suction surface. Formed in shape. Further, a metal terminal (not shown) was attached to the attracting electrode by brazing to produce an electrostatic chuck.
- a plasma treatment of 70 seconds per cycle was repeated 3000 times, and then a predetermined voltage was applied to the adsorption electrode for 300 seconds to adsorb and fix the silicon wafer.
- test piece thickness 1 mm
- dielectric loss at room temperature and 1 MHz was measured.
- the measurement was performed by a bridge circuit method using HP-4278A manufactured by Hewlett-Packard.
- the electrode shape is ⁇ 37 mm (guard ring method).
- sample no. It can be seen that the samples other than 1, 8, 15, 22, 28, 34, and 36 have a C2 / C1 molar ratio of 1 or more, and the residual adsorption force is effectively suppressed.
- sample no. 1, 8, 15, 22, 28, 34, and 36 have C2 / C1 of less than 1, Mn 3+ does not effectively resupply electrons from Fe and / or Cr, and the reduction reaction does not proceed easily.
- the apparent excited state continued, and the residual adsorption was remarkably generated (deterioration with time due to repeated plasma treatment).
- the sample No. 5 to 7 and material 2 (98 mass% Al 2 O 3 ), sample No. 20 and sample no. 21 and sample 3 for material 3 (AlN). 26 and sample no. 27, in material 4 (Al 2 O 3 —TiO 2 ), sample No. 32 and sample no.
- the residual adsorption force is effectively suppressed, and it is understood that the low dielectric loss is maintained particularly at Fe of 500 ppm or less. This means that Fe impurities at the grain boundaries are suppressed to an amount that does not affect the dielectric loss.
- the dielectric loss of the insulating substrate tends to increase. As described above, it has been found that when Fe is 500 ppm or more, the dielectric loss is deteriorated.
- the electrostatic chuck 1 of the present invention having the structure of FIG.
- the starting material of the insulating substrate 2 is a purity of 99.6% by mass Al 2 O 3 powder (average particle diameter D50 is 0.5 ⁇ m). To 100 parts by mass of the raw material powder, 80 parts by mass of toluene and 0.5% by mass of dispersant are used. The part was mixed with 48 Hr wet pulverized and mixed with high-purity Al 2 O 3 balls of ⁇ 20 mm in a ball mill.
- a plasticizer and a binder were added to the wet pulverized mixed slurry.
- 2 parts by mass of DBP and DOP were added to 100 parts by mass of the raw material powder, 12 parts by mass of polyvinyl butyral was converted to solid content in terms of solid content, and the mixture was further wet mixed for 30 hours.
- the mixed organic-inorganic mixed slurry (with and without Fe 2 O 3 and Ce 2 O 3 ) was formed into a ceramic green sheet having a thickness of 200 ⁇ m by the doctor blade method.
- tungsten paste serving as an adsorption electrode was printed on a ceramic green sheet of Al 2 O 3 added with Fe 2 O 3 and Ce 2 O 3 by screen printing.
- the Al 2 O 3 ceramic green sheet added with Fe 2 O 3 and Ce 2 O 3 is placed on the lower surface (surface opposite to the adsorption surface) of the adsorption electrode so that the thickness after firing is within 0.5 mm.
- a sample overlaid on was also prepared.
- the obtained laminate was fired for 3 hours at a predetermined temperature (1600 ° C.) in a reducing atmosphere to obtain an insulating base ceramic.
- the obtained insulating substrate was subjected to thickness processing by rotary grinding, so that the total thickness of the insulating substrate was 2 mm.
- the upper surface side region 21 was set to 0.35 ⁇ m.
- gas introduction holes were formed by machining, and convex portions having a height of 12 ⁇ m were formed in a predetermined pattern shape by a sand blast method using a mask on the adsorption surface.
- a metal terminal (not shown) was attached to the attracting electrode by brazing to produce an electrostatic chuck, and this was further bonded to a cooling base plate (not shown).
- the plasma treatment of one cycle of 70 seconds was repeated 3000 times on the suction surface of the electrostatic chuck, and then a predetermined voltage was applied to the suction electrode for 300 seconds to suck and fix the silicon wafer.
- test piece thickness 1 mm
- dielectric loss at room temperature and 1 MHz was measured.
- the measurement was performed by a bridge circuit method using HP-4278A manufactured by Hewlett-Packard.
- the electrode shape is ⁇ 37 mm (guard ring method).
- a high frequency RF of 15 MHz was applied to the base plate, the surface of the electrostatic chuck was measured with an infrared thermometer, and the difference ( ⁇ T) between the maximum temperature and the minimum temperature was evaluated.
- the portion other than the region involved in the adsorption (the lower surface region 22) has a low dielectric loss, so that it is possible to improve the temperature unevenness against soaking as the whole insulating substrate. Further, since C2 / C1 was 1 or more, the residual adsorption suppressing power did not deteriorate with time.
- Electrostatic chuck 2 Insulating substrate 3: Electrode for adsorption 4: Peripheral wall 5: Gas flow path 6: Convex portion 7: Gas introduction hole 8: Lead wire 9: DC power supply 21: Upper surface side region 22: Lower surface side region
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Abstract
Description
2:絶縁基体
3:吸着用電極
4:周壁
5:ガス流路
6:凸部
7:ガス導入孔
8:リード線
9:直流電源
21:上面側領域
22:下面側領域
Claims (5)
- 絶縁基体と、吸着用電極とを備えた静電チャックであって、前記絶縁基体の少なくとも上面を含む領域はMnを含むとともにFeおよびCrの少なくとも一方からなる第一の遷移元素を含むセラミックスからなり、前記Mnの含有量C1(mol)に対する前記第一の遷移元素の含有量C2(mol)の比C2/C1が1以上であることを特徴とする静電チャック。
- 前記吸着用電極は前記絶縁基体の内部に設けられ、前記絶縁基体の上面側領域は前記第一の遷移元素を含んでいて、前記C1に対する前記C2の比C2/C1が1以上であることを特徴とする請求項1に記載の静電チャック。
- 前記FeおよびCrの少なくとも一方の含有率が80ppm以上であることを特徴とする請求項1または請求項2に記載の静電チャック。
- 前記セラミックスに、前記Feが500ppm以下の含有率で含まれていることを特徴とする請求項1乃至請求項3のいずれかに記載の静電チャック。
- 前記絶縁基体がAl2O3,AlNおよびAl2O3-TiO2のうちの少なくとも1種を主成分とすることを特徴とする請求項1乃至請求項4のいずれかに記載の静電チャック。
Priority Applications (4)
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CN201180018371.7A CN102834913B (zh) | 2010-07-26 | 2011-07-26 | 静电吸盘 |
US13/639,283 US8810992B2 (en) | 2010-07-26 | 2011-07-26 | Electrostatic chuck |
JP2012526504A JP5409917B2 (ja) | 2010-07-26 | 2011-07-26 | 静電チャック |
KR1020127025949A KR101644000B1 (ko) | 2010-07-26 | 2011-07-26 | 정전 척 |
Applications Claiming Priority (2)
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JP2010167247 | 2010-07-26 | ||
JP2010-167247 | 2010-07-26 |
Publications (1)
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WO2012014873A1 true WO2012014873A1 (ja) | 2012-02-02 |
Family
ID=45530080
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Application Number | Title | Priority Date | Filing Date |
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PCT/JP2011/066924 WO2012014873A1 (ja) | 2010-07-26 | 2011-07-26 | 静電チャック |
Country Status (5)
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US (1) | US8810992B2 (ja) |
JP (1) | JP5409917B2 (ja) |
KR (1) | KR101644000B1 (ja) |
CN (1) | CN102834913B (ja) |
WO (1) | WO2012014873A1 (ja) |
Cited By (2)
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KR20160131007A (ko) | 2014-03-10 | 2016-11-15 | 스미토모 오사카 세멘토 가부시키가이샤 | 유전체 재료 및 정전 척 장치 |
JP2019179780A (ja) * | 2018-03-30 | 2019-10-17 | 住友大阪セメント株式会社 | 静電チャック装置の製造方法 |
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US11064903B2 (en) | 2008-11-18 | 2021-07-20 | Sync-Rx, Ltd | Apparatus and methods for mapping a sequence of images to a roadmap image |
WO2013111363A1 (ja) | 2012-01-26 | 2013-08-01 | 京セラ株式会社 | 静電チャック |
JP2014093420A (ja) * | 2012-11-02 | 2014-05-19 | Toyota Motor Corp | ウェハを支持ディスクに接着する治具、および、それを用いた半導体装置の製造方法 |
EP2960933B1 (en) * | 2013-02-25 | 2017-12-06 | Kyocera Corporation | Sample holding tool |
US9669653B2 (en) | 2013-03-14 | 2017-06-06 | Applied Materials, Inc. | Electrostatic chuck refurbishment |
US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
EP3366128B1 (en) * | 2015-11-28 | 2020-01-08 | Kyocera Corporation | Guide member for fishing line |
KR101933508B1 (ko) * | 2018-07-05 | 2018-12-28 | 주식회사 맥테크 | 도전성 다공질 세라믹 기판 및 그 제조방법 |
WO2020045432A1 (ja) * | 2018-08-29 | 2020-03-05 | 京セラ株式会社 | 静電チャックおよび静電チャックの製造方法 |
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- 2011-07-26 KR KR1020127025949A patent/KR101644000B1/ko active IP Right Grant
- 2011-07-26 WO PCT/JP2011/066924 patent/WO2012014873A1/ja active Application Filing
- 2011-07-26 US US13/639,283 patent/US8810992B2/en active Active
- 2011-07-26 CN CN201180018371.7A patent/CN102834913B/zh active Active
- 2011-07-26 JP JP2012526504A patent/JP5409917B2/ja active Active
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Also Published As
Publication number | Publication date |
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CN102834913B (zh) | 2016-01-06 |
JP5409917B2 (ja) | 2014-02-05 |
KR101644000B1 (ko) | 2016-07-29 |
CN102834913A (zh) | 2012-12-19 |
US8810992B2 (en) | 2014-08-19 |
US20130120896A1 (en) | 2013-05-16 |
JPWO2012014873A1 (ja) | 2013-09-12 |
KR20130091630A (ko) | 2013-08-19 |
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