KR20020046183A - 정전 척 및 그 제조 방법 - Google Patents
정전 척 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20020046183A KR20020046183A KR1020010077215A KR20010077215A KR20020046183A KR 20020046183 A KR20020046183 A KR 20020046183A KR 1020010077215 A KR1020010077215 A KR 1020010077215A KR 20010077215 A KR20010077215 A KR 20010077215A KR 20020046183 A KR20020046183 A KR 20020046183A
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric layer
- electrostatic chuck
- aluminum nitride
- wafer
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
- G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
- B23Q3/154—Stationary devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
중심선 평균 표면 조도(Ra)(nm) | 웨이퍼 상에서의 입자 이탈의 개수(개/mm2) |
320 | 1.5 |
51 | 0.8 |
35 | 0.9 |
25 | 1.1 |
18 | 0.7 |
중심선 평균 표면 조도(Ra)(nm) | 웨이퍼상에서의 입자 이탈의 개수(개/mm2) |
320 | 1.1 |
52 | 0.9 |
34 | 0.5 |
25 | 0.0 |
17 | 0.0 |
표면층(3)의 두께(㎛) | 웨이퍼상에서의 입자 이탈의 개수(개/mm2) |
0.5 | 0.0 |
1.0 | 0.0 |
2.0 | 0.0 |
5.0 | 0.0 |
10.0 | 0.2 |
Claims (8)
- 질화알루미늄으로 이루어진 유전층을 구비하고, 이 유전층 상에 웨이퍼를 흡착시키기 위한 정전 척으로서,상기 유전층의 표면은 25 nm 이하의 중심선 평균 표면 조도를 가지며, 상기 유전층을 구성하는 질화알루미늄보다도 경질인 재료로 이루어진 두께 200 nm 이상의 표면층으로 상기 유전층의 표면을 피복하는 것을 특징으로 하는 정전 척.
- 제1항에 있어서, 상기 질화알루미늄보다도 경질인 재료는 알루미나계 세라믹, 알루미나를 함유한 복합 재료, 다이아몬드형 카본 및 다이아몬드로 이루어진 군에서 선택되는 것을 특징으로 하는 정전 척.
- 제1항 또는 제2항에 있어서, 상기 질화알루미늄을 구성하는 질화알루미늄 입자의 평균 입자 직경은 1∼10 ㎛인 것을 특징으로 하는 정전 척.
- 질화알루미늄으로 이루어진 유전층을 구비하고 이 유전층 상에 웨이퍼를 흡착시키기 위한 정전 척을 제조하는 방법으로서,상기 유전층 표면의 중심선 평균 표면 조도를 25 nm 이하로 한 후, 이 유전층의 상기 표면을, 상기 유전층을 구성하는 질화알루미늄보다도 경질인 재료로 이루어진 두께 200 nm 이상의 표면층으로 상기 유전 층의 표면을 피복하는 것을 특징으로 하는 정전 척의 제조 방법.
- 제4항에 있어서, 상기 질화알루미늄보다 경질인 재료는 알루미나계 세라믹, 알루미나를 함유한 복합 재료, 다이아몬드형 카본 및 다이아몬드로 이루어진 군으로부터 선택되는 것을 특징으로 하는 정전 척의 제조 방법.
- 제4항 또는 제5항에 있어서, 상기 질화알루미늄을 구성하는 질화알루미늄 입자의 평균 입자 직경은 1∼10 ㎛인 것을 특징으로 하는 정전 척의 제조 방법.
- 제4항 또는 제5항에 있어서, 상기 표면층을 형성하기 전에 상기 유전층의 표면에 대하여 불활성 기체의 스퍼터 에칭을 행하는 것을 특징으로 하는 정전 척의 제조 방법.
- 제7항에 있어서, 상기 불활성 기체의 스퍼터 에칭을 행하는 데 있어서, 상기 불활성 기체에 대하여 산소를 함유시키는 것을 특징으로 하는 정전 척의 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2000-00376158 | 2000-12-11 | ||
JP2000376158A JP4312372B2 (ja) | 2000-12-11 | 2000-12-11 | 静電チャックおよびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020046183A true KR20020046183A (ko) | 2002-06-20 |
KR100450475B1 KR100450475B1 (ko) | 2004-10-02 |
Family
ID=18845060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0077215A KR100450475B1 (ko) | 2000-12-11 | 2001-12-07 | 정전 척 및 그 제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US6636413B2 (ko) |
JP (1) | JP4312372B2 (ko) |
KR (1) | KR100450475B1 (ko) |
TW (1) | TW508717B (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020064508A (ko) * | 2001-02-02 | 2002-08-09 | 삼성전자 주식회사 | 정전 척 |
KR100756619B1 (ko) * | 2005-03-25 | 2007-09-10 | 니뽄 가이시 가부시키가이샤 | 질화알루미늄 소결체, 반도체 제조용 부재 및 질화알루미늄소결체의 제조 방법 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6982125B2 (en) * | 2002-12-23 | 2006-01-03 | Saint-Gobain Ceramics & Plastics, Inc. | ALN material and electrostatic chuck incorporating same |
EP1465012A3 (en) * | 2003-03-31 | 2004-12-22 | ASML Netherlands B.V. | Supporting structure for use in a lithographic apparatus |
SG125948A1 (en) * | 2003-03-31 | 2006-10-30 | Asml Netherlands Bv | Supporting structure for use in a lithographic apparatus |
US7420653B2 (en) * | 2003-10-02 | 2008-09-02 | Asml Netherlands B.V. | Lithographic projection apparatus, mirror, method of supplying a protective cap layer, device manufacturing method and device manufactured accordingly |
KR100666039B1 (ko) * | 2003-12-05 | 2007-01-10 | 동경 엘렉트론 주식회사 | 정전척 |
US7245357B2 (en) * | 2003-12-15 | 2007-07-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20080141938A1 (en) * | 2006-12-13 | 2008-06-19 | General Electric Company | Processing apparatus, coated article and method |
JP5295515B2 (ja) * | 2007-03-30 | 2013-09-18 | 東京エレクトロン株式会社 | 載置台の表面処理方法 |
JP2010092976A (ja) * | 2008-10-06 | 2010-04-22 | Ulvac Japan Ltd | 吸着力回復方法、吸着力低下防止方法 |
US9642261B2 (en) * | 2014-01-24 | 2017-05-02 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Composite electronic structure with partially exposed and protruding copper termination posts |
JP6522180B1 (ja) | 2018-02-08 | 2019-05-29 | Sppテクノロジーズ株式会社 | 基板載置台及びこれを備えたプラズマ処理装置及びプラズマ処理方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07245336A (ja) * | 1994-03-03 | 1995-09-19 | Fujitsu Ltd | 静電チャックおよびその表面処理方法 |
JPH0855900A (ja) * | 1994-08-11 | 1996-02-27 | Fujitsu Ltd | 静電吸着方法とその装置と半導体装置の製造方法 |
JPH0945753A (ja) * | 1995-07-28 | 1997-02-14 | Kyocera Corp | 物品保持装置 |
TW303505B (en) * | 1996-05-08 | 1997-04-21 | Applied Materials Inc | Substrate support chuck having a contaminant containment layer and method of fabricating same |
JP4236292B2 (ja) * | 1997-03-06 | 2009-03-11 | 日本碍子株式会社 | ウエハー吸着装置およびその製造方法 |
JPH11157953A (ja) * | 1997-12-02 | 1999-06-15 | Nhk Spring Co Ltd | セラミックスと金属との構造体及びそれを用いた静電チャック装置 |
JP4013386B2 (ja) * | 1998-03-02 | 2007-11-28 | 住友電気工業株式会社 | 半導体製造用保持体およびその製造方法 |
JP3357313B2 (ja) * | 1999-03-11 | 2002-12-16 | 住友特殊金属株式会社 | 薄膜磁気ヘッド、薄膜磁気ヘッド用基板、および薄膜磁気ヘッド用基板の製造方法 |
-
2000
- 2000-12-11 JP JP2000376158A patent/JP4312372B2/ja not_active Expired - Lifetime
-
2001
- 2001-10-31 TW TW090127004A patent/TW508717B/zh not_active IP Right Cessation
- 2001-12-04 US US10/004,736 patent/US6636413B2/en not_active Expired - Lifetime
- 2001-12-07 KR KR10-2001-0077215A patent/KR100450475B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020064508A (ko) * | 2001-02-02 | 2002-08-09 | 삼성전자 주식회사 | 정전 척 |
KR100756619B1 (ko) * | 2005-03-25 | 2007-09-10 | 니뽄 가이시 가부시키가이샤 | 질화알루미늄 소결체, 반도체 제조용 부재 및 질화알루미늄소결체의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP2002184852A (ja) | 2002-06-28 |
KR100450475B1 (ko) | 2004-10-02 |
JP4312372B2 (ja) | 2009-08-12 |
US20020109954A1 (en) | 2002-08-15 |
US6636413B2 (en) | 2003-10-21 |
TW508717B (en) | 2002-11-01 |
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