KR100752559B1 - 유전체막의 형성 방법 - Google Patents

유전체막의 형성 방법 Download PDF

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KR100752559B1
KR100752559B1 KR1020027012657A KR20027012657A KR100752559B1 KR 100752559 B1 KR100752559 B1 KR 100752559B1 KR 1020027012657 A KR1020027012657 A KR 1020027012657A KR 20027012657 A KR20027012657 A KR 20027012657A KR 100752559 B1 KR100752559 B1 KR 100752559B1
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forming
substrate
gaseous
molecular compound
insulating layer
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KR20020095194A (ko
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히데키 기류
신타로 아오야마
츠요시 다카하시
히로시 신리키
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동경 엘렉트론 주식회사
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    • H10P14/6938Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69397Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements

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  • Organic Chemistry (AREA)
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  • Formation Of Insulating Films (AREA)
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  • Insulated Gate Type Field-Effect Transistor (AREA)
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