KR100752559B1 - 유전체막의 형성 방법 - Google Patents
유전체막의 형성 방법 Download PDFInfo
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- KR100752559B1 KR100752559B1 KR1020027012657A KR20027012657A KR100752559B1 KR 100752559 B1 KR100752559 B1 KR 100752559B1 KR 1020027012657 A KR1020027012657 A KR 1020027012657A KR 20027012657 A KR20027012657 A KR 20027012657A KR 100752559 B1 KR100752559 B1 KR 100752559B1
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- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2000-00095818 | 2000-03-30 | ||
| JP2000095818A JP4493796B2 (ja) | 2000-03-30 | 2000-03-30 | 誘電体膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20020095194A KR20020095194A (ko) | 2002-12-20 |
| KR100752559B1 true KR100752559B1 (ko) | 2007-08-29 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027012657A Expired - Fee Related KR100752559B1 (ko) | 2000-03-30 | 2001-03-22 | 유전체막의 형성 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6866890B2 (https=) |
| EP (1) | EP1269528B1 (https=) |
| JP (1) | JP4493796B2 (https=) |
| KR (1) | KR100752559B1 (https=) |
| TW (1) | TW486762B (https=) |
| WO (1) | WO2001075956A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101451716B1 (ko) * | 2008-08-11 | 2014-10-16 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
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| JP3437832B2 (ja) | 2000-03-22 | 2003-08-18 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
| JP4095326B2 (ja) | 2002-03-29 | 2008-06-04 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置 |
| JP2004140292A (ja) | 2002-10-21 | 2004-05-13 | Tokyo Electron Ltd | 誘電体膜の形成方法 |
| JP2005093909A (ja) * | 2003-09-19 | 2005-04-07 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
| JP2005317583A (ja) * | 2004-04-27 | 2005-11-10 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP4582542B2 (ja) * | 2005-02-02 | 2010-11-17 | 株式会社神戸製鋼所 | ダイヤモンド電界効果トランジスタ及びその製造方法 |
| US7235502B2 (en) * | 2005-03-31 | 2007-06-26 | Freescale Semiconductor, Inc. | Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors |
| FR2890982B1 (fr) * | 2005-09-21 | 2008-05-02 | St Microelectronics Sa | Procede de realisation d'une couche dielectrique sur un materiau porteur et un circuit integre comprenant un condensateur incorporant une couche dielectrique |
| JP4722876B2 (ja) * | 2007-04-16 | 2011-07-13 | 東京エレクトロン株式会社 | 金属酸化膜の形成方法 |
| DE102007018013A1 (de) * | 2007-04-17 | 2008-10-23 | Qimonda Ag | Dielektrische Schicht sowie Verfahren zur Herstellung einer dielektrischen Schicht |
| JP5419420B2 (ja) * | 2008-11-04 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびに記憶媒体 |
| US8689705B2 (en) | 2010-06-02 | 2014-04-08 | Steelcase, Inc. | Reconfigurable table assemblies |
| US9210999B2 (en) | 2010-06-02 | 2015-12-15 | Steelcase Inc. | Frame type table assemblies |
| US9185974B2 (en) | 2010-06-02 | 2015-11-17 | Steelcase Inc. | Frame type workstation configurations |
| US8667908B2 (en) | 2010-06-02 | 2014-03-11 | Steelcase Inc. | Frame type table assemblies |
| US12376677B1 (en) | 2012-10-10 | 2025-08-05 | Steelcase Inc. | Ergonomic seating system, tilt-lock control and remote powering method and apparatus |
| LU92795B1 (en) | 2015-08-10 | 2017-02-14 | Luxembourg Inst Science & Tech List | SIO2 thin film produced by atomic layer deposition at room temperature |
| WO2017197395A1 (en) | 2016-05-13 | 2017-11-16 | Steelcase Inc. | Multi-tiered workstation assembly |
| US10517392B2 (en) | 2016-05-13 | 2019-12-31 | Steelcase Inc. | Multi-tiered workstation assembly |
| US10217626B1 (en) * | 2017-12-15 | 2019-02-26 | Mattson Technology, Inc. | Surface treatment of substrates using passivation layers |
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| US6020243A (en) | 1997-07-24 | 2000-02-01 | Texas Instruments Incorporated | Zirconium and/or hafnium silicon-oxynitride gate dielectric |
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| JPH02283022A (ja) * | 1989-01-25 | 1990-11-20 | Hitachi Ltd | 半導体装置の製造方法 |
| JP2828152B2 (ja) * | 1991-08-13 | 1998-11-25 | 富士通 株式会社 | 薄膜形成方法、多層構造膜及びシリコン薄膜トランジスタの形成方法 |
| JPH05315608A (ja) * | 1992-05-13 | 1993-11-26 | Tadahiro Omi | 半導体装置 |
| JPH06310687A (ja) * | 1993-04-20 | 1994-11-04 | Kawasaki Steel Corp | 半導体装置およびその製造方法 |
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| JP2871580B2 (ja) * | 1996-03-29 | 1999-03-17 | 日本電気株式会社 | 半導体装置の製造方法 |
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| US6699797B1 (en) * | 2002-12-17 | 2004-03-02 | Intel Corporation | Method of fabrication of low dielectric constant porous metal silicate films |
-
2000
- 2000-03-30 JP JP2000095818A patent/JP4493796B2/ja not_active Expired - Fee Related
-
2001
- 2001-03-22 WO PCT/JP2001/002262 patent/WO2001075956A1/en not_active Ceased
- 2001-03-22 US US10/239,648 patent/US6866890B2/en not_active Expired - Fee Related
- 2001-03-22 KR KR1020027012657A patent/KR100752559B1/ko not_active Expired - Fee Related
- 2001-03-22 EP EP01915684A patent/EP1269528B1/en not_active Expired - Lifetime
- 2001-03-28 TW TW090107295A patent/TW486762B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5939131A (en) | 1996-07-23 | 1999-08-17 | Samsung Electronics Co., Ltd. | Methods for forming capacitors including rapid thermal oxidation |
| US6020243A (en) | 1997-07-24 | 2000-02-01 | Texas Instruments Incorporated | Zirconium and/or hafnium silicon-oxynitride gate dielectric |
| WO1999039384A1 (en) * | 1998-02-02 | 1999-08-05 | Micron Technology, Inc. | Method of forming a semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101451716B1 (ko) * | 2008-08-11 | 2014-10-16 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1269528A1 (en) | 2003-01-02 |
| EP1269528B1 (en) | 2012-06-20 |
| US6866890B2 (en) | 2005-03-15 |
| JP4493796B2 (ja) | 2010-06-30 |
| JP2001284344A (ja) | 2001-10-12 |
| WO2001075956A1 (en) | 2001-10-11 |
| KR20020095194A (ko) | 2002-12-20 |
| US20040005408A1 (en) | 2004-01-08 |
| TW486762B (en) | 2002-05-11 |
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