TW486762B - Method of forming a dielectric film - Google Patents

Method of forming a dielectric film Download PDF

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Publication number
TW486762B
TW486762B TW090107295A TW90107295A TW486762B TW 486762 B TW486762 B TW 486762B TW 090107295 A TW090107295 A TW 090107295A TW 90107295 A TW90107295 A TW 90107295A TW 486762 B TW486762 B TW 486762B
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Taiwan
Prior art keywords
gaseous
layer
forming
dielectric
item
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TW090107295A
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English (en)
Chinese (zh)
Inventor
Hideki Kiryu
Shintaro Aoyama
Tsuyoshi Takahashi
Hiroshi Shinriki
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Tokyo Electron Ltd
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    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69397—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing two or more metal elements

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TW090107295A 2000-03-30 2001-03-28 Method of forming a dielectric film TW486762B (en)

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KR100752559B1 (ko) 2007-08-29
JP4493796B2 (ja) 2010-06-30
JP2001284344A (ja) 2001-10-12
WO2001075956A1 (en) 2001-10-11
KR20020095194A (ko) 2002-12-20
US20040005408A1 (en) 2004-01-08

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