KR100744590B1 - 하지 절연막의 형성 방법 및 반도체 제조 장치 - Google Patents

하지 절연막의 형성 방법 및 반도체 제조 장치 Download PDF

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KR100744590B1
KR100744590B1 KR1020047011711A KR20047011711A KR100744590B1 KR 100744590 B1 KR100744590 B1 KR 100744590B1 KR 1020047011711 A KR1020047011711 A KR 1020047011711A KR 20047011711 A KR20047011711 A KR 20047011711A KR 100744590 B1 KR100744590 B1 KR 100744590B1
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film
plasma
insulating film
forming
substrate
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KR20040086317A (ko
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스가와라다쿠야
다다요시히데
나카무라겐지
오자키시게노리
나카니시도시오
사사키마사루
마츠야마세이지
하세베가즈히데
나카지마시게루
후지와라도모노리
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동경 엘렉트론 주식회사
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
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    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/693—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
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    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

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  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020047011711A 2002-03-29 2003-03-31 하지 절연막의 형성 방법 및 반도체 제조 장치 Expired - Fee Related KR100744590B1 (ko)

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Application Number Priority Date Filing Date Title
JPJP-P-2002-00097845 2002-03-29
JP2002097845 2002-03-29
PCT/JP2003/004125 WO2003088341A1 (en) 2002-03-29 2003-03-31 Method for forming underlying insulation film

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KR20040086317A KR20040086317A (ko) 2004-10-08
KR100744590B1 true KR100744590B1 (ko) 2007-08-01

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Country Status (8)

Country Link
US (1) US7622402B2 (https=)
EP (1) EP1492161A4 (https=)
JP (2) JP4162601B2 (https=)
KR (1) KR100744590B1 (https=)
CN (2) CN100390945C (https=)
AU (1) AU2003221055A1 (https=)
TW (1) TW200402796A (https=)
WO (1) WO2003088341A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12362147B2 (en) 2021-12-28 2025-07-15 Semes Co., Ltd Apparatus for treating substrate

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112485B2 (en) 2002-08-28 2006-09-26 Micron Technology, Inc. Systems and methods for forming zirconium and/or hafnium-containing layers
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
WO2005098961A1 (ja) * 2004-04-09 2005-10-20 Tokyo Electron Limited ゲート絶縁膜の形成方法、記憶媒体、及びコンピュータプログラム
JP4526995B2 (ja) * 2004-04-09 2010-08-18 東京エレクトロン株式会社 ゲート絶縁膜の形成方法ならびにコンピュータ読取可能な記憶媒体およびコンピュータプログラム
US7361608B2 (en) * 2004-09-30 2008-04-22 Tokyo Electron Limited Method and system for forming a feature in a high-k layer
JP2006216625A (ja) * 2005-02-01 2006-08-17 Tohoku Univ 薄膜形成装置，薄膜及びその形成方法，半導体装置及びその製造方法
JP4509839B2 (ja) * 2005-03-29 2010-07-21 東京エレクトロン株式会社 基板処理方法
JP4522900B2 (ja) * 2005-03-30 2010-08-11 東京エレクトロン株式会社 成膜方法および記録媒体
WO2007138937A1 (en) * 2006-05-26 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20080086686A (ko) * 2007-03-23 2008-09-26 주식회사 하이닉스반도체 반도체 소자의 제조방법
USD593127S1 (en) * 2007-04-02 2009-05-26 Tokyo Electron Limited Computer generated image for a display panel or screen
KR101050457B1 (ko) * 2008-08-29 2011-07-19 주식회사 하이닉스반도체 반도체장치의 고전압게이트절연막 형성 방법
JP5166297B2 (ja) * 2009-01-21 2013-03-21 東京エレクトロン株式会社 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体
DE112010000953B4 (de) 2009-03-05 2017-08-24 Mitsubishi Electric Corporation Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung
JP5710606B2 (ja) * 2009-06-26 2015-04-30 東京エレクトロン株式会社 アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善
US8497196B2 (en) * 2009-10-04 2013-07-30 Tokyo Electron Limited Semiconductor device, method for fabricating the same and apparatus for fabricating the same
KR101474184B1 (ko) 2011-03-04 2014-12-17 아사히 가세이 일렉트로닉스 가부시끼가이샤 반도체 장치, 반도체 장치의 제조 방법
CN103165437B (zh) * 2011-12-12 2016-06-29 无锡华润上华科技有限公司 一种栅氧刻蚀方法和多栅极制作方法
US8993459B2 (en) 2012-08-31 2015-03-31 Globalfoundries Inc. Method of forming a material layer in a semiconductor structure
CN103887241B (zh) * 2014-03-06 2016-09-28 北京大学 一种适用于锗基阱的制备方法
CN106601588A (zh) * 2016-12-06 2017-04-26 湖南红太阳光电科技有限公司 一种氧化硅钝化层的制备方法
IT201700053902A1 (it) * 2017-05-18 2018-11-18 Lfoundry Srl Metodo di bonding ibrido per wafer a semiconduttore e relativo dispositivo integrato tridimensionale
US20210057215A1 (en) * 2019-05-03 2021-02-25 Applied Materials, Inc. Treatments to enhance material structures
KR102603515B1 (ko) * 2022-11-03 2023-11-20 (주)이큐테크플러스 고밀도 라디컬을 이용하여 개선된 계면 및 박막을 형성하는 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294550A (ja) * 1999-04-05 2000-10-20 Tokyo Electron Ltd 半導体製造方法及び半導体製造装置
JP2001160555A (ja) * 1999-11-30 2001-06-12 Tadahiro Omi １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745968A (en) * 1980-08-29 1982-03-16 Ibm Capacitor with double dielectric unit
JPH05221644A (ja) * 1992-02-13 1993-08-31 Matsushita Electric Ind Co Ltd 酸化タンタル薄膜の製造方法
TW399324B (en) * 1997-01-10 2000-07-21 Hitachi Ltd The semiconductor device and its manufacturing method
US6461982B2 (en) * 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
EP1189493A3 (en) * 1997-05-22 2004-06-23 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
US6020243A (en) * 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
JP4069966B2 (ja) 1998-04-10 2008-04-02 東京エレクトロン株式会社 シリコン酸化膜の成膜方法および装置
US6228779B1 (en) * 1998-11-06 2001-05-08 Novellus Systems, Inc. Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology
US6245616B1 (en) * 1999-01-06 2001-06-12 International Business Machines Corporation Method of forming oxynitride gate dielectric
KR20010017820A (ko) * 1999-08-14 2001-03-05 윤종용 반도체 소자 및 그 제조방법
ATE514181T1 (de) * 2000-03-13 2011-07-15 Tadahiro Ohmi Verfahren zur ausbildung eines dielektrischen films
US6348373B1 (en) * 2000-03-29 2002-02-19 Sharp Laboratories Of America, Inc. Method for improving electrical properties of high dielectric constant films
EP1292970B1 (en) 2000-06-08 2011-09-28 Genitech Inc. Thin film forming method
JP2001358318A (ja) * 2000-06-15 2001-12-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2002134739A (ja) * 2000-10-19 2002-05-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002289614A (ja) * 2001-03-26 2002-10-04 Nec Corp 誘電体膜の評価方法、熱処理装置の温度校正方法及び半導体記憶装置の製造方法
US6787440B2 (en) * 2002-12-10 2004-09-07 Intel Corporation Method for making a semiconductor device having an ultra-thin high-k gate dielectric

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000294550A (ja) * 1999-04-05 2000-10-20 Tokyo Electron Ltd 半導体製造方法及び半導体製造装置
JP2001160555A (ja) * 1999-11-30 2001-06-12 Tadahiro Omi １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12362147B2 (en) 2021-12-28 2025-07-15 Semes Co., Ltd Apparatus for treating substrate

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CN1967787A (zh) 2007-05-23
EP1492161A1 (en) 2004-12-29
CN100390945C (zh) 2008-05-28
JPWO2003088341A1 (ja) 2005-08-25
KR20040086317A (ko) 2004-10-08
AU2003221055A1 (en) 2003-10-27
JP2008277844A (ja) 2008-11-13
US7622402B2 (en) 2009-11-24
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