TW200402796A - Forming method of substrate insulation film - Google Patents

Forming method of substrate insulation film Download PDF

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Publication number
TW200402796A
TW200402796A TW092107430A TW92107430A TW200402796A TW 200402796 A TW200402796 A TW 200402796A TW 092107430 A TW092107430 A TW 092107430A TW 92107430 A TW92107430 A TW 92107430A TW 200402796 A TW200402796 A TW 200402796A
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TW
Taiwan
Prior art keywords
film
substrate
plasma
gas
insulating film
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TW092107430A
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English (en)
Chinese (zh)
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TWI300249B (https=
Inventor
Takuya Sugawara
Yoshihide Tada
Genji Nakamura
Shigenori Ozaki
Toshio Nakanishi
Masaru Sasaki
Seiji Matsuyama
Kazuhide Hasebe
Shigeru Nakajima
Tomonori Fujiwara
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Tokyo Electron Ltd
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Publication of TW200402796A publication Critical patent/TW200402796A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6548—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by forming intermediate materials, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/693—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Chemical Vapour Deposition (AREA)
TW092107430A 2002-03-29 2003-03-31 Forming method of substrate insulation film TW200402796A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002097845 2002-03-29

Publications (2)

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TW200402796A true TW200402796A (en) 2004-02-16
TWI300249B TWI300249B (https=) 2008-08-21

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TW092107430A TW200402796A (en) 2002-03-29 2003-03-31 Forming method of substrate insulation film

Country Status (8)

Country Link
US (1) US7622402B2 (https=)
EP (1) EP1492161A4 (https=)
JP (2) JP4162601B2 (https=)
KR (1) KR100744590B1 (https=)
CN (2) CN100390945C (https=)
AU (1) AU2003221055A1 (https=)
TW (1) TW200402796A (https=)
WO (1) WO2003088341A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462296B (zh) * 2011-03-04 2014-11-21 旭化成微電子股份有限公司 Semiconductor device, semiconductor device manufacturing method

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112485B2 (en) 2002-08-28 2006-09-26 Micron Technology, Inc. Systems and methods for forming zirconium and/or hafnium-containing layers
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
WO2005098961A1 (ja) * 2004-04-09 2005-10-20 Tokyo Electron Limited ゲート絶縁膜の形成方法、記憶媒体、及びコンピュータプログラム
JP4526995B2 (ja) * 2004-04-09 2010-08-18 東京エレクトロン株式会社 ゲート絶縁膜の形成方法ならびにコンピュータ読取可能な記憶媒体およびコンピュータプログラム
US7361608B2 (en) * 2004-09-30 2008-04-22 Tokyo Electron Limited Method and system for forming a feature in a high-k layer
JP2006216625A (ja) * 2005-02-01 2006-08-17 Tohoku Univ 薄膜形成装置，薄膜及びその形成方法，半導体装置及びその製造方法
JP4509839B2 (ja) * 2005-03-29 2010-07-21 東京エレクトロン株式会社 基板処理方法
JP4522900B2 (ja) * 2005-03-30 2010-08-11 東京エレクトロン株式会社 成膜方法および記録媒体
WO2007138937A1 (en) * 2006-05-26 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR20080086686A (ko) * 2007-03-23 2008-09-26 주식회사 하이닉스반도체 반도체 소자의 제조방법
USD593127S1 (en) * 2007-04-02 2009-05-26 Tokyo Electron Limited Computer generated image for a display panel or screen
KR101050457B1 (ko) * 2008-08-29 2011-07-19 주식회사 하이닉스반도체 반도체장치의 고전압게이트절연막 형성 방법
JP5166297B2 (ja) * 2009-01-21 2013-03-21 東京エレクトロン株式会社 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体
DE112010000953B4 (de) 2009-03-05 2017-08-24 Mitsubishi Electric Corporation Verfahren zum Herstellen einer Siliziumkarbid-Halbleitervorrichtung
JP5710606B2 (ja) * 2009-06-26 2015-04-30 東京エレクトロン株式会社 アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善
US8497196B2 (en) * 2009-10-04 2013-07-30 Tokyo Electron Limited Semiconductor device, method for fabricating the same and apparatus for fabricating the same
CN103165437B (zh) * 2011-12-12 2016-06-29 无锡华润上华科技有限公司 一种栅氧刻蚀方法和多栅极制作方法
US8993459B2 (en) 2012-08-31 2015-03-31 Globalfoundries Inc. Method of forming a material layer in a semiconductor structure
CN103887241B (zh) * 2014-03-06 2016-09-28 北京大学 一种适用于锗基阱的制备方法
CN106601588A (zh) * 2016-12-06 2017-04-26 湖南红太阳光电科技有限公司 一种氧化硅钝化层的制备方法
IT201700053902A1 (it) * 2017-05-18 2018-11-18 Lfoundry Srl Metodo di bonding ibrido per wafer a semiconduttore e relativo dispositivo integrato tridimensionale
US20210057215A1 (en) * 2019-05-03 2021-02-25 Applied Materials, Inc. Treatments to enhance material structures
KR102748017B1 (ko) 2021-12-28 2024-12-31 세메스 주식회사 기판 처리 장치
KR102603515B1 (ko) * 2022-11-03 2023-11-20 (주)이큐테크플러스 고밀도 라디컬을 이용하여 개선된 계면 및 박막을 형성하는 방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5745968A (en) * 1980-08-29 1982-03-16 Ibm Capacitor with double dielectric unit
JPH05221644A (ja) * 1992-02-13 1993-08-31 Matsushita Electric Ind Co Ltd 酸化タンタル薄膜の製造方法
TW399324B (en) * 1997-01-10 2000-07-21 Hitachi Ltd The semiconductor device and its manufacturing method
US6461982B2 (en) * 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
EP1189493A3 (en) * 1997-05-22 2004-06-23 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
US6020243A (en) * 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
JP4069966B2 (ja) 1998-04-10 2008-04-02 東京エレクトロン株式会社 シリコン酸化膜の成膜方法および装置
US6228779B1 (en) * 1998-11-06 2001-05-08 Novellus Systems, Inc. Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology
US6245616B1 (en) * 1999-01-06 2001-06-12 International Business Machines Corporation Method of forming oxynitride gate dielectric
JP4255563B2 (ja) * 1999-04-05 2009-04-15 東京エレクトロン株式会社 半導体製造方法及び半導体製造装置
KR20010017820A (ko) * 1999-08-14 2001-03-05 윤종용 반도체 소자 및 그 제조방법
JP4397491B2 (ja) 1999-11-30 2010-01-13 財団法人国際科学振興財団 １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法
ATE514181T1 (de) * 2000-03-13 2011-07-15 Tadahiro Ohmi Verfahren zur ausbildung eines dielektrischen films
US6348373B1 (en) * 2000-03-29 2002-02-19 Sharp Laboratories Of America, Inc. Method for improving electrical properties of high dielectric constant films
EP1292970B1 (en) 2000-06-08 2011-09-28 Genitech Inc. Thin film forming method
JP2001358318A (ja) * 2000-06-15 2001-12-26 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2002134739A (ja) * 2000-10-19 2002-05-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002289614A (ja) * 2001-03-26 2002-10-04 Nec Corp 誘電体膜の評価方法、熱処理装置の温度校正方法及び半導体記憶装置の製造方法
US6787440B2 (en) * 2002-12-10 2004-09-07 Intel Corporation Method for making a semiconductor device having an ultra-thin high-k gate dielectric

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI462296B (zh) * 2011-03-04 2014-11-21 旭化成微電子股份有限公司 Semiconductor device, semiconductor device manufacturing method

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US20050255711A1 (en) 2005-11-17
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KR100744590B1 (ko) 2007-08-01
EP1492161A1 (en) 2004-12-29
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JPWO2003088341A1 (ja) 2005-08-25
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US7622402B2 (en) 2009-11-24
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