KR100722031B1 - 멀티플 양자 웰 구조를 갖는 광 반도체 장치 - Google Patents
멀티플 양자 웰 구조를 갖는 광 반도체 장치 Download PDFInfo
- Publication number
- KR100722031B1 KR100722031B1 KR1020017009087A KR20017009087A KR100722031B1 KR 100722031 B1 KR100722031 B1 KR 100722031B1 KR 1020017009087 A KR1020017009087 A KR 1020017009087A KR 20017009087 A KR20017009087 A KR 20017009087A KR 100722031 B1 KR100722031 B1 KR 100722031B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- well layer
- quantum well
- layers
- monolayer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 230000003287 optical effect Effects 0.000 title claims abstract description 14
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 230000002285 radioactive effect Effects 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 7
- 150000004767 nitrides Chemical class 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 140
- 229910052738 indium Inorganic materials 0.000 claims description 46
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 46
- 229910002601 GaN Inorganic materials 0.000 claims description 26
- 239000002356 single layer Substances 0.000 claims description 26
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 230000006911 nucleation Effects 0.000 description 6
- 238000010899 nucleation Methods 0.000 description 6
- 239000012071 phase Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19955747A DE19955747A1 (de) | 1999-11-19 | 1999-11-19 | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
| DE19955747.0 | 1999-11-19 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067024995A Division KR100799793B1 (ko) | 1999-11-19 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010101598A KR20010101598A (ko) | 2001-11-14 |
| KR100722031B1 true KR100722031B1 (ko) | 2007-05-25 |
Family
ID=7929653
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077024702A KR100889144B1 (ko) | 1999-11-09 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
| KR1020017009087A KR100722031B1 (ko) | 1999-11-19 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
| KR1020067024995A KR100799793B1 (ko) | 1999-11-19 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020077024702A KR100889144B1 (ko) | 1999-11-09 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067024995A KR100799793B1 (ko) | 1999-11-19 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US6849881B1 (ja) |
| EP (1) | EP1145331B1 (ja) |
| JP (2) | JP4681186B2 (ja) |
| KR (3) | KR100889144B1 (ja) |
| CA (1) | CA2360502A1 (ja) |
| DE (1) | DE19955747A1 (ja) |
| TW (1) | TW479374B (ja) |
| WO (1) | WO2001039282A2 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100957750B1 (ko) | 2008-08-12 | 2010-05-13 | 우리엘에스티 주식회사 | 발광 소자 |
| KR20170014955A (ko) * | 2015-07-31 | 2017-02-08 | 엘지전자 주식회사 | 디스플레이 장치 |
Families Citing this family (148)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19955747A1 (de) * | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
| US6515313B1 (en) * | 1999-12-02 | 2003-02-04 | Cree Lighting Company | High efficiency light emitters with reduced polarization-induced charges |
| TW546855B (en) | 2001-06-07 | 2003-08-11 | Sumitomo Chemical Co | Group 3-5 compound semiconductor and light emitting diode |
| WO2002103814A1 (en) * | 2001-06-15 | 2002-12-27 | Cree, Inc. | Gan based led formed on a sic substrate |
| KR100853935B1 (ko) * | 2002-03-06 | 2008-08-25 | 주식회사 엘지이아이 | 반도체 발광 다이오드 및 그의 제조방법 |
| WO2004040661A2 (de) | 2002-10-30 | 2004-05-13 | Osram Opto Semiconductors Gmbh | Verfahren zum herstellen einer leuchtdioden-lichtquelle mit lumineszenz-konversionselement |
| DE10258193B4 (de) | 2002-12-12 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Leuchtdioden-Lichtquellen mit Lumineszenz-Konversionselement |
| DE10261675B4 (de) | 2002-12-31 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit strahlungsdurchlässiger elektrischer Kontaktschicht |
| TWI255052B (en) | 2003-02-14 | 2006-05-11 | Osram Opto Semiconductors Gmbh | Method to produce a number of semiconductor-bodies and electronic semiconductor-bodies |
| CA2897376A1 (en) | 2003-02-26 | 2004-09-10 | Radoje T. Drmanac | Modular system and probes for dna analysis |
| DE10308866A1 (de) | 2003-02-28 | 2004-09-09 | Osram Opto Semiconductors Gmbh | Beleuchtungsmodul und Verfahren zu dessen Herstellung |
| DE10361661A1 (de) * | 2003-07-14 | 2005-03-17 | Osram Opto Semiconductors Gmbh | Licht emittierendes Bauelement mit einem Lumineszenz-Konversionselement |
| KR101034055B1 (ko) | 2003-07-18 | 2011-05-12 | 엘지이노텍 주식회사 | 발광 다이오드 및 그 제조방법 |
| JP2005056973A (ja) * | 2003-08-01 | 2005-03-03 | Hitachi Cable Ltd | 半導体発光素子及びそれを作製するための半導体発光素子用エピタキシャルウェハ |
| US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
| US7223611B2 (en) * | 2003-10-07 | 2007-05-29 | Hewlett-Packard Development Company, L.P. | Fabrication of nanowires |
| DE10351349A1 (de) | 2003-10-31 | 2005-06-16 | Osram Opto Semiconductors Gmbh | Verfahren zum Hestellen eines Lumineszenzdiodenchips |
| DE102004016697B4 (de) * | 2004-02-27 | 2007-10-11 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von Halbleiterchips umfassend ein Verbindungsverfahren, das Löten mit einem Lot umfasst, und Halbleiterchip |
| EP1741144A1 (de) | 2004-04-29 | 2007-01-10 | Osram Opto Semiconductors GmbH | Verfahren zum herstellen eines strahlungsemittierenden halbleiterchips |
| DE102004021175B4 (de) | 2004-04-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchips für die Optoelektronik und Verfahren zu deren Herstellung |
| DE102004026125A1 (de) | 2004-05-28 | 2005-12-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zu dessen Herstellung |
| DE102004040468B4 (de) | 2004-05-31 | 2022-02-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement und Gehäuse-Grundkörper für ein derartiges Bauelement |
| DE102004045947A1 (de) * | 2004-06-30 | 2006-01-19 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
| DE102005013894B4 (de) * | 2004-06-30 | 2010-06-17 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung |
| JP5305655B2 (ja) * | 2004-07-30 | 2013-10-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 薄膜技術による半導体チップの製造方法および薄膜半導体チップ |
| US8728937B2 (en) * | 2004-07-30 | 2014-05-20 | Osram Opto Semiconductors Gmbh | Method for producing semiconductor chips using thin film technology |
| KR100611491B1 (ko) * | 2004-08-26 | 2006-08-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| KR100670531B1 (ko) * | 2004-08-26 | 2007-01-16 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
| JP2006128653A (ja) * | 2004-09-28 | 2006-05-18 | Sumitomo Chemical Co Ltd | ３−５族化合物半導体、その製造方法及びその用途 |
| DE102005028748A1 (de) | 2004-10-25 | 2006-05-04 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes Halbleiterbauelement und Bauelementgehäuse |
| JP2007019277A (ja) * | 2005-07-07 | 2007-01-25 | Rohm Co Ltd | 半導体発光素子 |
| DE102005035722B9 (de) | 2005-07-29 | 2021-11-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
| JP4913375B2 (ja) | 2005-08-08 | 2012-04-11 | 昭和電工株式会社 | 半導体素子の製造方法 |
| JP2007080996A (ja) | 2005-09-13 | 2007-03-29 | Sony Corp | ＧａＮ系半導体発光素子及びその製造方法 |
| EP1764840A1 (en) * | 2005-09-15 | 2007-03-21 | SuperNova Optoelectronics Corporation | Gallium nitride semiconductor light emitting device |
| KR100691283B1 (ko) * | 2005-09-23 | 2007-03-12 | 삼성전기주식회사 | 질화물 반도체 소자 |
| DE102005062514A1 (de) | 2005-09-28 | 2007-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| DE102006023685A1 (de) | 2005-09-29 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102006004397A1 (de) | 2005-09-30 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierendes optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| KR100649749B1 (ko) * | 2005-10-25 | 2006-11-27 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
| KR20080106402A (ko) | 2006-01-05 | 2008-12-05 | 일루미텍스, 인크. | Ｌｅｄ로부터 광을 유도하기 위한 개별 광학 디바이스 |
| DE102006033502A1 (de) * | 2006-05-03 | 2007-11-15 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper mit Trägersubstrat und Verfahren zur Herstellung eines solchen |
| DE102006028692B4 (de) * | 2006-05-19 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium |
| DE102006024165A1 (de) | 2006-05-23 | 2007-11-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Optoelektronischer Halbleiterchip mit einem Wellenlängenkonversionsstoff sowie optoelektronisches Halbleiterbauelement mit einem solchen Halbleiterchip und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
| KR101263934B1 (ko) * | 2006-05-23 | 2013-05-10 | 엘지디스플레이 주식회사 | 발광다이오드 및 그의 제조방법 |
| JP2007318044A (ja) * | 2006-05-29 | 2007-12-06 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
| US20070284565A1 (en) * | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
| EP2033236A4 (en) * | 2006-06-12 | 2014-10-22 | 3M Innovative Properties Co | LED DEVICE WITH RE-ESTIMATING SEMICONDUCTOR CONSTRUCTION AND OPTICAL ELEMENT |
| US7952110B2 (en) | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
| WO2007146868A1 (en) * | 2006-06-12 | 2007-12-21 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and converging optical element |
| US7902542B2 (en) * | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
| EP1883121B1 (en) * | 2006-07-26 | 2019-03-06 | LG Electronics Inc. | Nitride-based semiconductor light emitting device |
| KR100850950B1 (ko) * | 2006-07-26 | 2008-08-08 | 엘지전자 주식회사 | 질화물계 발광 소자 |
| EP1883140B1 (de) * | 2006-07-27 | 2013-02-27 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten |
| EP1883119B1 (de) * | 2006-07-27 | 2015-11-04 | OSRAM Opto Semiconductors GmbH | Halbleiter-Schichtstruktur mit Übergitter |
| EP1883141B1 (de) * | 2006-07-27 | 2017-05-24 | OSRAM Opto Semiconductors GmbH | LD oder LED mit Übergitter-Mantelschicht |
| DE102007021009A1 (de) | 2006-09-27 | 2008-04-10 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung und Verfahren zur Herstellung einer solchen |
| DE102006051745B4 (de) | 2006-09-28 | 2024-02-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
| DE102006063104B4 (de) | 2006-09-28 | 2024-08-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
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| TW479374B (en) | 2002-03-11 |
| JP4681186B2 (ja) | 2011-05-11 |
| CA2360502A1 (en) | 2001-05-31 |
| KR100799793B1 (ko) | 2008-01-31 |
| US20060289854A1 (en) | 2006-12-28 |
| JP2011035433A (ja) | 2011-02-17 |
| KR20010101598A (ko) | 2001-11-14 |
| KR20070116157A (ko) | 2007-12-06 |
| KR100889144B1 (ko) | 2009-03-16 |
| KR20070009725A (ko) | 2007-01-18 |
| WO2001039282A3 (de) | 2001-12-06 |
| US6849881B1 (en) | 2005-02-01 |
| JP5361845B2 (ja) | 2013-12-04 |
| WO2001039282A2 (de) | 2001-05-31 |
| US7556974B2 (en) | 2009-07-07 |
| JP2003515936A (ja) | 2003-05-07 |
| US7106090B2 (en) | 2006-09-12 |
| DE19955747A1 (de) | 2001-05-23 |
| EP1145331A2 (de) | 2001-10-17 |
| US20050116216A1 (en) | 2005-06-02 |
| EP1145331B1 (de) | 2013-07-17 |
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