KR100691701B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR100691701B1
KR100691701B1 KR1020050007889A KR20050007889A KR100691701B1 KR 100691701 B1 KR100691701 B1 KR 100691701B1 KR 1020050007889 A KR1020050007889 A KR 1020050007889A KR 20050007889 A KR20050007889 A KR 20050007889A KR 100691701 B1 KR100691701 B1 KR 100691701B1
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KR
South Korea
Prior art keywords
nonvolatile memory
semiconductor device
memory cell
nmos transistor
forming
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KR1020050007889A
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English (en)
Korean (ko)
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KR20060003815A (ko
Inventor
다카하시고지
나카가와신이치
Original Assignee
후지쯔 가부시끼가이샤
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Publication date
Application filed by 후지쯔 가부시끼가이샤 filed Critical 후지쯔 가부시끼가이샤
Publication of KR20060003815A publication Critical patent/KR20060003815A/ko
Application granted granted Critical
Publication of KR100691701B1 publication Critical patent/KR100691701B1/ko
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020050007889A 2004-07-06 2005-01-28 반도체 장치의 제조 방법 Expired - Fee Related KR100691701B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004198888A JP2006024598A (ja) 2004-07-06 2004-07-06 半導体装置の製造方法
JPJP-P-2004-00198888 2004-07-06

Publications (2)

Publication Number Publication Date
KR20060003815A KR20060003815A (ko) 2006-01-11
KR100691701B1 true KR100691701B1 (ko) 2007-03-09

Family

ID=35058439

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050007889A Expired - Fee Related KR100691701B1 (ko) 2004-07-06 2005-01-28 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (2) US7541236B2 (enExample)
EP (1) EP1615266A3 (enExample)
JP (1) JP2006024598A (enExample)
KR (1) KR100691701B1 (enExample)
CN (1) CN100380632C (enExample)
TW (1) TWI282113B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1818989A3 (en) * 2006-02-10 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device and manufacturing method thereof
EP1837917A1 (en) * 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
TWI416738B (zh) * 2006-03-21 2013-11-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
US7554854B2 (en) * 2006-03-31 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for deleting data from NAND type nonvolatile memory
US8022460B2 (en) * 2006-03-31 2011-09-20 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP4975398B2 (ja) * 2006-08-30 2012-07-11 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US7813158B2 (en) * 2007-05-14 2010-10-12 Hong Kong Applied Science And Technology Research Institute Co., Ltd. Recordable electrical memory
JP2010272649A (ja) * 2009-05-20 2010-12-02 Panasonic Corp 半導体装置及びその製造方法
US20140030860A1 (en) * 2012-07-24 2014-01-30 Eon Silicon Solution, Inc. Manufacturing method of tunnel oxide of nor flash memory

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646425A (en) * 1984-12-10 1987-03-03 Solid State Scientific, Inc. Method for making a self-aligned CMOS EPROM wherein the EPROM floating gate and CMOS gates are made from one polysilicon layer
CA2004436C (en) 1989-12-01 1999-06-29 Alain Comeau Test chip for use in semiconductor fault analysis
JPH03214778A (ja) * 1990-01-19 1991-09-19 Sharp Corp 半導体記憶装置の動作方法
JP2976693B2 (ja) 1992-05-08 1999-11-10 日本電気株式会社 Ｃｍｏｓ型半導体集積回路
US5292681A (en) * 1993-09-16 1994-03-08 Micron Semiconductor, Inc. Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors
JPH0870056A (ja) * 1994-08-31 1996-03-12 Toshiba Corp 半導体記憶装置
JP2982862B2 (ja) 1996-07-17 1999-11-29 日本電気株式会社 半導体装置
JP2924832B2 (ja) * 1996-11-28 1999-07-26 日本電気株式会社 半導体装置の製造方法
JP3887064B2 (ja) * 1997-05-15 2007-02-28 株式会社東芝 不揮発性半導体記憶装置
JP3221369B2 (ja) * 1997-09-19 2001-10-22 日本電気株式会社 不揮発性半導体記憶装置及びその製造方法
JP3528575B2 (ja) * 1998-02-17 2004-05-17 セイコーエプソン株式会社 不揮発性半導体記憶装置及びその製造方法
JP2000150666A (ja) * 1998-11-05 2000-05-30 Nec Corp 半導体装置及びその製造方法
JP4398541B2 (ja) 1999-06-30 2010-01-13 東芝メモリシステムズ株式会社 不揮発性半導体メモリ
JP3467479B2 (ja) * 2000-05-19 2003-11-17 松下電器産業株式会社 不揮発性半導体記憶装置
JP2002064190A (ja) * 2000-08-18 2002-02-28 Mitsubishi Electric Corp 半導体装置
JP2002246562A (ja) * 2001-02-15 2002-08-30 Toshiba Corp 半導体記憶装置
US7084437B2 (en) * 2001-10-31 2006-08-01 International Business Machines Corporation Semiconductor device
JP5179692B2 (ja) 2002-08-30 2013-04-10 富士通セミコンダクター株式会社 半導体記憶装置及びその製造方法
JP4338495B2 (ja) * 2002-10-30 2009-10-07 富士通マイクロエレクトロニクス株式会社 シリコンオキシカーバイド、半導体装置、および半導体装置の製造方法
JP2004193282A (ja) * 2002-12-10 2004-07-08 Renesas Technology Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
EP1615266A2 (en) 2006-01-11
JP2006024598A (ja) 2006-01-26
US7541236B2 (en) 2009-06-02
US7910431B2 (en) 2011-03-22
TWI282113B (en) 2007-06-01
US20080220573A1 (en) 2008-09-11
KR20060003815A (ko) 2006-01-11
TW200603209A (en) 2006-01-16
CN1719597A (zh) 2006-01-11
EP1615266A3 (en) 2014-01-29
CN100380632C (zh) 2008-04-09
US20060008995A1 (en) 2006-01-12

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