KR100684155B1 - 원자외선 노광용 포지티브 포토레지스트 조성물 - Google Patents

원자외선 노광용 포지티브 포토레지스트 조성물 Download PDF

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Publication number
KR100684155B1
KR100684155B1 KR1020000028523A KR20000028523A KR100684155B1 KR 100684155 B1 KR100684155 B1 KR 100684155B1 KR 1020000028523 A KR1020000028523 A KR 1020000028523A KR 20000028523 A KR20000028523 A KR 20000028523A KR 100684155 B1 KR100684155 B1 KR 100684155B1
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South Korea
Prior art keywords
group
substituent
carbon atoms
alkyl group
hydrogen atom
Prior art date
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KR1020000028523A
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English (en)
Korean (ko)
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KR20000077438A (ko
Inventor
사토켄이치로오
코다마쿠니히코
아오아이토시아키
나카오하지메
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Priority claimed from JP14677599A external-priority patent/JP3547047B2/ja
Priority claimed from JP11146774A external-priority patent/JP2000338673A/ja
Priority claimed from JP15021599A external-priority patent/JP3890380B2/ja
Priority claimed from JP11152862A external-priority patent/JP2000338681A/ja
Priority claimed from JP15286199A external-priority patent/JP4046258B2/ja
Priority claimed from JP11152860A external-priority patent/JP2000338679A/ja
Priority claimed from JP15869599A external-priority patent/JP3992882B2/ja
Priority claimed from JP15869399A external-priority patent/JP3989132B2/ja
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20000077438A publication Critical patent/KR20000077438A/ko
Application granted granted Critical
Publication of KR100684155B1 publication Critical patent/KR100684155B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
KR1020000028523A 1999-05-26 2000-05-26 원자외선 노광용 포지티브 포토레지스트 조성물 KR100684155B1 (ko)

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
JP99-146774 1999-05-26
JP99-146775 1999-05-26
JP14677599A JP3547047B2 (ja) 1999-05-26 1999-05-26 遠紫外線露光用ポジ型フォトレジスト組成物
JP11146774A JP2000338673A (ja) 1999-05-26 1999-05-26 遠紫外線露光用ポジ型フォトレジスト組成物
JP15021599A JP3890380B2 (ja) 1999-05-28 1999-05-28 遠紫外線露光用ポジ型フォトレジスト組成物
JP99-150215 1999-05-28
JP11152862A JP2000338681A (ja) 1999-05-31 1999-05-31 遠紫外線露光用ポジ型フォトレジスト組成物
JP99-152860 1999-05-31
JP15286199A JP4046258B2 (ja) 1999-05-31 1999-05-31 遠紫外線露光用ポジ型フォトレジスト組成物
JP11152860A JP2000338679A (ja) 1999-05-31 1999-05-31 遠紫外線露光用ポジ型フォトレジスト組成物
JP99-152861 1999-05-31
JP99-152862 1999-05-31
JP15869599A JP3992882B2 (ja) 1999-06-04 1999-06-04 遠紫外線露光用ポジ型フォトレジスト組成物
JP99-158693 1999-06-04
JP99-158695 1999-06-04
JP15869399A JP3989132B2 (ja) 1999-06-04 1999-06-04 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
KR20000077438A KR20000077438A (ko) 2000-12-26
KR100684155B1 true KR100684155B1 (ko) 2007-02-28

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KR1020000028523A KR100684155B1 (ko) 1999-05-26 2000-05-26 원자외선 노광용 포지티브 포토레지스트 조성물

Country Status (2)

Country Link
US (1) US6479211B1 (US06479211-20021112-C00034.png)
KR (1) KR100684155B1 (US06479211-20021112-C00034.png)

Cited By (1)

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KR101378765B1 (ko) 2007-05-30 2014-03-28 주식회사 동진쎄미켐 포토에시드 제너레이터를 포함하는 포토레지스트 모노머,폴리머 및 그를 포함하는 포토레지스트 조성물

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KR100922841B1 (ko) * 2007-12-18 2009-10-20 제일모직주식회사 감광성 고분자 및 이를 포함하는 레지스트 조성물
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KR101378765B1 (ko) 2007-05-30 2014-03-28 주식회사 동진쎄미켐 포토에시드 제너레이터를 포함하는 포토레지스트 모노머,폴리머 및 그를 포함하는 포토레지스트 조성물

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