KR100681665B9 - 칩용 보호막 형성용 시트 및 반도체 칩의 제조 방법 - Google Patents

칩용 보호막 형성용 시트 및 반도체 칩의 제조 방법

Info

Publication number
KR100681665B9
KR100681665B9 KR20020014961A KR20020014961A KR100681665B9 KR 100681665 B9 KR100681665 B9 KR 100681665B9 KR 20020014961 A KR20020014961 A KR 20020014961A KR 20020014961 A KR20020014961 A KR 20020014961A KR 100681665 B9 KR100681665 B9 KR 100681665B9
Authority
KR
South Korea
Prior art keywords
chips
sheet
protective film
producing semiconductor
semiconductor chips
Prior art date
Application number
KR20020014961A
Other languages
English (en)
Other versions
KR20020075256A (ko
KR100681665B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18937369&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR100681665(B9) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed filed Critical
Publication of KR20020075256A publication Critical patent/KR20020075256A/ko
Application granted granted Critical
Publication of KR100681665B1 publication Critical patent/KR100681665B1/ko
Publication of KR100681665B9 publication Critical patent/KR100681665B9/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3164Partial encapsulation or coating the coating being a foil
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/562Protection against mechanical damage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27Manufacturing methods
    • H01L2224/274Manufacturing methods by blanket deposition of the material of the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01025Manganese [Mn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01027Cobalt [Co]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/14Layer or component removable to expose adhesive

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Dicing (AREA)
  • Laminated Bodies (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
KR1020020014961A 2001-03-21 2002-03-20 칩용 보호막 형성용 시트 및 반도체 칩의 제조 방법 KR100681665B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00081226 2001-03-21
JP2001081226A JP3544362B2 (ja) 2001-03-21 2001-03-21 半導体チップの製造方法

Publications (3)

Publication Number Publication Date
KR20020075256A KR20020075256A (ko) 2002-10-04
KR100681665B1 KR100681665B1 (ko) 2007-02-09
KR100681665B9 true KR100681665B9 (ko) 2021-07-08

Family

ID=18937369

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020014961A KR100681665B1 (ko) 2001-03-21 2002-03-20 칩용 보호막 형성용 시트 및 반도체 칩의 제조 방법

Country Status (10)

Country Link
US (4) US6919262B2 (ko)
EP (3) EP1852906B1 (ko)
JP (1) JP3544362B2 (ko)
KR (1) KR100681665B1 (ko)
CN (2) CN100370581C (ko)
DE (1) DE60225084T2 (ko)
MX (1) MXPA02003032A (ko)
MY (2) MY135433A (ko)
PT (3) PT2911189T (ko)
TW (1) TW533532B (ko)

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3544362B2 (ja) * 2001-03-21 2004-07-21 リンテック株式会社 半導体チップの製造方法
JP4341343B2 (ja) * 2002-10-04 2009-10-07 日立化成工業株式会社 表面保護フィルム及びその製造方法
GB2404280B (en) 2003-07-03 2006-09-27 Xsil Technology Ltd Die bonding
JP4093930B2 (ja) * 2003-07-17 2008-06-04 株式会社東京精密 フレーム搬送プローバ
JP2005051018A (ja) * 2003-07-28 2005-02-24 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2005197572A (ja) * 2004-01-09 2005-07-21 Renesas Technology Corp 半導体チップの製造方法並びに液晶表示装置の製造方法
JP4523777B2 (ja) * 2004-01-09 2010-08-11 リンテック株式会社 剥離シート
JP4523778B2 (ja) * 2004-01-16 2010-08-11 リンテック株式会社 剥離シート
JP4523780B2 (ja) * 2004-01-26 2010-08-11 リンテック株式会社 剥離シート
JP2005223244A (ja) * 2004-02-09 2005-08-18 Tokyo Seimitsu Co Ltd チップの飛び出し位置検出方法
WO2005093829A1 (en) * 2004-03-16 2005-10-06 Infineon Technologies Ag Semiconductor package having an interfacial adhesive layer
JP2005327789A (ja) * 2004-05-12 2005-11-24 Sharp Corp ダイシング・ダイボンド兼用粘接着シートおよびこれを用いた半導体装置の製造方法
JP4754185B2 (ja) * 2004-05-27 2011-08-24 リンテック株式会社 半導体封止用樹脂シートおよびこれを用いた半導体装置の製造方法
JP4642436B2 (ja) * 2004-11-12 2011-03-02 リンテック株式会社 マーキング方法および保護膜形成兼ダイシング用シート
DE102005024431B4 (de) 2005-05-24 2009-08-06 Infineon Technologies Ag Verfahren zur Herstellung von Halbleiterbauteilen unter Verwendung einer Trägerplatte mit doppelseitig klebender Klebstofffolie
JP4731241B2 (ja) * 2005-08-02 2011-07-20 株式会社ディスコ ウエーハの分割方法
DE102005046479B4 (de) * 2005-09-28 2008-12-18 Infineon Technologies Austria Ag Verfahren zum Spalten von spröden Materialien mittels Trenching Technologie
JP4812392B2 (ja) * 2005-10-14 2011-11-09 日東電工株式会社 熱硬化性樹脂シート
JP5046366B2 (ja) * 2005-10-20 2012-10-10 信越化学工業株式会社 接着剤組成物及び該接着剤からなる接着層を備えたシート
US7371674B2 (en) * 2005-12-22 2008-05-13 Intel Corporation Nanostructure-based package interconnect
JP2007250970A (ja) * 2006-03-17 2007-09-27 Hitachi Chem Co Ltd 半導体素子裏面保護用フィルム及びそれを用いた半導体装置とその製造法
JP4846406B2 (ja) * 2006-03-28 2011-12-28 リンテック株式会社 チップ用保護膜形成用シート
TWI381433B (zh) 2006-07-27 2013-01-01 Princo Corp 結合ic整合基板與載板之結構及其製造方法與電子裝置之製造方法
DE102006035644A1 (de) * 2006-07-31 2008-02-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reduzieren der Kontamination durch Vorsehen einer zu entfernenden Polymerschutzschicht während der Bearbeitung von Mikrostrukturen
US7700458B2 (en) * 2006-08-04 2010-04-20 Stats Chippac Ltd. Integrated circuit package system employing wafer level chip scale packaging
CN100485909C (zh) * 2006-08-18 2009-05-06 巨擘科技股份有限公司 结合ic整合基板与载板的结构及其与电子装置的制造方法
KR100831968B1 (ko) * 2006-09-01 2008-05-27 엠텍비젼 주식회사 반도체 패키징 방법 및 이에 의해 제조되는 반도체 패키지
JP5054954B2 (ja) * 2006-09-22 2012-10-24 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4439507B2 (ja) * 2006-10-23 2010-03-24 Okiセミコンダクタ株式会社 センサチップの製造方法
US20080141509A1 (en) * 2006-12-19 2008-06-19 Tokyo Electron Limited Substrate processing system, substrate processing method, and storage medium
JP2008218930A (ja) * 2007-03-07 2008-09-18 Furukawa Electric Co Ltd:The エネルギー線硬化型チップ保護用フィルム
JP5344802B2 (ja) * 2007-03-30 2013-11-20 リンテック株式会社 チップ用保護膜形成用シートおよび保護膜付半導体チップ
US7727875B2 (en) * 2007-06-21 2010-06-01 Stats Chippac, Ltd. Grooving bumped wafer pre-underfill system
US7825517B2 (en) * 2007-07-16 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for packaging semiconductor dies having through-silicon vias
JP4762959B2 (ja) * 2007-09-03 2011-08-31 リンテック株式会社 半導体チップおよび半導体装置
US8198176B2 (en) * 2007-10-09 2012-06-12 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
WO2010045754A1 (en) * 2008-10-23 2010-04-29 Freescale Semiconductor Inc. Method for singulating electronic components from a substrate
JP5640050B2 (ja) * 2009-01-30 2014-12-10 日東電工株式会社 半導体装置の製造方法
JP5456441B2 (ja) * 2009-01-30 2014-03-26 日東電工株式会社 ダイシングテープ一体型ウエハ裏面保護フィルム
JP5805367B2 (ja) * 2009-01-30 2015-11-04 日東電工株式会社 ダイシングテープ一体型ウエハ裏面保護フィルム
JP5640051B2 (ja) * 2009-01-30 2014-12-10 日東電工株式会社 半導体装置の製造方法
JP5456440B2 (ja) 2009-01-30 2014-03-26 日東電工株式会社 ダイシングテープ一体型ウエハ裏面保護フィルム
CN102318059A (zh) * 2009-02-12 2012-01-11 住友电木株式会社 带切割片的半导体保护膜形成用膜、使用该膜的半导体装置的制造方法及半导体装置
JP4516150B1 (ja) * 2009-02-27 2010-08-04 昭和高分子株式会社 感光性樹脂組成物
JP5491049B2 (ja) * 2009-03-11 2014-05-14 日東電工株式会社 半導体ウエハ保護用基材レス粘着シート、その粘着シートを用いた半導体ウエハ裏面研削方法及びその粘着シートの製造方法
JP2010287884A (ja) * 2009-05-15 2010-12-24 Shin-Etsu Chemical Co Ltd 半導体チップの製造方法
CN101924056A (zh) * 2009-06-15 2010-12-22 日东电工株式会社 半导体背面用切割带集成膜
CN101924055A (zh) * 2009-06-15 2010-12-22 日东电工株式会社 半导体背面用切割带集成膜
EP2490251B1 (en) * 2009-10-16 2017-08-23 LG Chem, Ltd. Die attach film
US8287996B2 (en) * 2009-12-21 2012-10-16 Intel Corporation Coating for a microelectronic device, treatment comprising same, and method of managing a thermal profile of a microelectronic die
JP2011151362A (ja) * 2009-12-24 2011-08-04 Nitto Denko Corp ダイシングテープ一体型半導体裏面用フィルム
US8304065B2 (en) * 2009-12-28 2012-11-06 Leonel Arana Treatment for a microelectronic device and method of resisting damage to a microelectronic device using same
US20130026648A1 (en) 2010-01-20 2013-01-31 Takashi Hirano Film for forming semiconductor protection film, and semiconductor device
JP5123341B2 (ja) 2010-03-15 2013-01-23 信越化学工業株式会社 接着剤組成物、半導体ウエハ保護膜形成用シート
JP5023179B2 (ja) * 2010-03-31 2012-09-12 リンテック株式会社 チップ用樹脂膜形成用シートおよび半導体チップの製造方法
KR101555741B1 (ko) * 2010-04-19 2015-09-25 닛토덴코 가부시키가이샤 플립칩형 반도체 이면용 필름
US9196533B2 (en) 2010-04-20 2015-11-24 Nitto Denko Corporation Film for back surface of flip-chip semiconductor, dicing-tape-integrated film for back surface of semiconductor, process for producing semiconductor device, and flip-chip semiconductor device
JP5681376B2 (ja) * 2010-04-20 2015-03-04 日東電工株式会社 半導体装置の製造方法、及び、フリップチップ型半導体装置
JP5681375B2 (ja) * 2010-04-20 2015-03-04 日東電工株式会社 半導体装置の製造方法、及び、フリップチップ型半導体装置
US9620455B2 (en) * 2010-06-24 2017-04-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming anisotropic conductive film between semiconductor die and build-up interconnect structure
JP5918926B2 (ja) * 2010-10-13 2016-05-18 リンテック株式会社 保護膜形成用フィルムおよび半導体チップの製造方法
JP5893250B2 (ja) * 2011-01-31 2016-03-23 リンテック株式会社 チップ用保護膜形成用シート、半導体チップの製造方法および半導体装置
JP5727835B2 (ja) * 2011-03-30 2015-06-03 リンテック株式会社 保護膜形成用フィルム、保護膜形成用シートおよび半導体チップの製造方法
JP2011223014A (ja) * 2011-06-02 2011-11-04 Furukawa Electric Co Ltd:The チップ保護用フィルム
JP5972550B2 (ja) * 2011-09-29 2016-08-17 リンテック株式会社 チップ用樹脂膜形成用組成物、チップ用樹脂膜形成用シートおよび半導体装置の製造方法
US9786541B2 (en) 2011-09-30 2017-10-10 Lintec Corporation Dicing sheet with protective film forming layer and chip fabrication method
JP5972551B2 (ja) * 2011-10-06 2016-08-17 リンテック株式会社 チップ用樹脂膜形成用シートおよび半導体チップの製造方法
WO2013089982A1 (en) * 2011-12-15 2013-06-20 Henkel Corporation Method of preparing an adhesive film into a precut semiconductor wafer shape on a dicing tape
JP5960428B2 (ja) * 2011-12-21 2016-08-02 リンテック株式会社 保護膜形成層付ダイシングシートおよびチップの製造方法
JP5544052B2 (ja) * 2011-12-26 2014-07-09 リンテック株式会社 保護膜形成層付ダイシングシートおよびチップの製造方法
JP2013149737A (ja) 2012-01-18 2013-08-01 Nitto Denko Corp フリップチップ型半導体装置の製造方法
WO2013133268A1 (ja) 2012-03-07 2013-09-12 リンテック株式会社 チップ用樹脂膜形成用シート
JP6000668B2 (ja) * 2012-06-07 2016-10-05 日東電工株式会社 半導体素子のマーキング方法、半導体装置の製造方法、及び半導体装置
JP6038919B2 (ja) * 2012-07-25 2016-12-07 リンテック株式会社 保護膜形成層、保護膜形成用シート及び半導体装置の製造方法
SG11201503050VA (en) * 2012-08-23 2015-06-29 Lintec Corp Dicing sheet with protective film formation layer and method for producing chip
JP6026222B2 (ja) * 2012-10-23 2016-11-16 株式会社ディスコ ウエーハの加工方法
WO2014083874A1 (ja) 2012-11-30 2014-06-05 リンテック株式会社 保護膜形成用組成物、保護膜形成用シート、及び硬化保護膜付きチップ
KR102140470B1 (ko) 2012-11-30 2020-08-03 린텍 가부시키가이샤 칩용 수지막 형성용 시트 및 반도체 장치의 제조 방법
KR102108776B1 (ko) 2012-12-03 2020-05-11 린텍 가부시키가이샤 보호막 형성용 필름
WO2014087948A1 (ja) 2012-12-03 2014-06-12 リンテック株式会社 保護膜形成用フィルム
US9196559B2 (en) * 2013-03-08 2015-11-24 Taiwan Semiconductor Manufacturing Company, Ltd. Directly sawing wafers covered with liquid molding compound
JP6357147B2 (ja) 2013-03-19 2018-07-11 リンテック株式会社 保護膜形成用フィルム
CN105339168B (zh) 2013-03-28 2018-05-29 琳得科株式会社 保护膜形成用复合片、带有保护膜的芯片、以及带有保护膜的芯片的制造方法
CN105264035B (zh) * 2013-06-11 2017-10-13 电化株式会社 粘合片以及使用该粘合片的电子元件的制造方法
CN103646956B (zh) * 2013-12-25 2016-07-06 中国电子科技集团公司第四十四研究所 带保护膜ccd芯片封装工艺
SG11201605781WA (en) * 2014-01-22 2016-09-29 Lintec Corp Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and inspection method
US9704769B2 (en) 2014-02-27 2017-07-11 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming encapsulated wafer level chip scale package (EWLCSP)
WO2015146936A1 (ja) 2014-03-24 2015-10-01 リンテック株式会社 保護膜形成フィルム、保護膜形成用シート、ワークまたは加工物の製造方法、検査方法、良品と判断されたワーク、および良品と判断された加工物
CN106030763B (zh) 2014-03-28 2019-06-28 琳得科株式会社 保护膜形成用膜及带保护膜的半导体芯片的制造方法
WO2016002080A1 (ja) * 2014-07-04 2016-01-07 リンテック株式会社 保護膜形成用フィルム
US9922935B2 (en) 2014-09-17 2018-03-20 Samsung Electronics Co., Ltd. Semiconductor package and method of fabricating the same
KR20160032958A (ko) 2014-09-17 2016-03-25 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
JP6585068B2 (ja) * 2014-10-29 2019-10-02 リンテック株式会社 保護膜形成フィルムおよび保護膜形成用複合シート
KR102327141B1 (ko) * 2014-11-19 2021-11-16 삼성전자주식회사 프리패키지 및 이를 사용한 반도체 패키지의 제조 방법
JP6085288B2 (ja) * 2014-12-24 2017-02-22 リンテック株式会社 保護膜形成用フィルムおよび半導体チップの製造方法
JP6454580B2 (ja) 2015-03-30 2019-01-16 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP6539919B2 (ja) * 2015-05-25 2019-07-10 リンテック株式会社 半導体装置の製造方法
JP6517588B2 (ja) 2015-05-27 2019-05-22 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
TWI664229B (zh) * 2015-09-16 2019-07-01 日商琳得科股份有限公司 保護膜形成用薄膜
JP6872313B2 (ja) * 2015-10-13 2021-05-19 リンテック株式会社 半導体装置および複合シート
JP6791626B2 (ja) 2015-12-14 2020-11-25 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
JP6721325B2 (ja) 2015-12-14 2020-07-15 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法
KR102472267B1 (ko) * 2016-04-28 2022-11-30 린텍 가부시키가이샤 보호막이 형성된 반도체 칩의 제조 방법 및 반도체 장치의 제조 방법
WO2017188216A1 (ja) * 2016-04-28 2017-11-02 リンテック株式会社 保護膜形成用フィルムおよび保護膜形成用複合シート
TWI731964B (zh) * 2016-04-28 2021-07-01 日商琳得科股份有限公司 保護膜形成用複合片
KR101654510B1 (ko) * 2016-05-06 2016-09-05 주식회사 티에스피글로벌 반도체 칩 패키지 마킹 방법
CN107298428B (zh) * 2017-06-27 2019-04-09 北京航天控制仪器研究所 一种用于sog-mems芯片单元分离的方法
JP7025171B2 (ja) * 2017-10-12 2022-02-24 株式会社ディスコ 被加工物の研削方法
US10615075B2 (en) * 2018-06-13 2020-04-07 Texas Instruments Incorporated Dicing a wafer
CN113725169A (zh) * 2021-04-22 2021-11-30 成都芯源系统有限公司 倒装芯片封装单元及相关封装方法
WO2023066463A1 (de) * 2021-10-19 2023-04-27 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum erzeugen und zum bereitstellen von elektronischen bauteilen
KR20230081596A (ko) 2021-11-30 2023-06-07 (주)엠티아이 웨이퍼 레벨용 백사이드 유무기 점착테이프 및 이의 제조 방법

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2356309A (en) * 1941-05-09 1944-08-22 Gustav W Garbe Construction unit
US2574074A (en) * 1945-11-28 1951-11-06 Nat Steel Corp Building construction
US3034609A (en) * 1960-07-11 1962-05-15 Unistrut Products Company Building partition structure
US3381438A (en) * 1963-12-12 1968-05-07 Hauserman Co E F Reusable wall system
US3349529A (en) * 1965-03-15 1967-10-31 Kaiser Gypsum Company Inc Hollow wall partition system
US3492766A (en) * 1968-05-09 1970-02-03 Mccloskey Grant Corp Adjustable stud
US3623290A (en) * 1969-07-25 1971-11-30 Lucien R Downing Jr Partition wall
US3789567A (en) * 1972-12-29 1974-02-05 American Standard Inc Edge seals for multiple-interfitting partitions
US3897668A (en) * 1974-09-05 1975-08-05 Thomas M Mcdonnell Wall partition arrangement
US4267679A (en) * 1976-12-27 1981-05-19 Steelite, Inc. Insulated building panel wall construction
JPH0616524B2 (ja) 1984-03-12 1994-03-02 日東電工株式会社 半導体ウエハ固定用接着薄板
JPS60223139A (ja) 1984-04-18 1985-11-07 Nitto Electric Ind Co Ltd 半導体ウエハ固定用接着薄板
DE3639266A1 (de) * 1985-12-27 1987-07-02 Fsk K K Haftfolie
US5187007A (en) * 1985-12-27 1993-02-16 Lintec Corporation Adhesive sheets
US4793883A (en) * 1986-07-14 1988-12-27 National Starch And Chemical Corporation Method of bonding a semiconductor chip to a substrate
US4805364A (en) * 1987-02-02 1989-02-21 Smolik Robert A Wall construction
JPH0715087B2 (ja) 1988-07-21 1995-02-22 リンテック株式会社 粘接着テープおよびその使用方法
US5081813A (en) * 1990-02-27 1992-01-21 Allied Constructions Pty. Limited Metal wall frame structure
US5079884A (en) * 1990-06-04 1992-01-14 National Gypsum Company Extendible interconnected Z-studs
US5989377A (en) * 1994-07-08 1999-11-23 Metallized Products, Inc. Method of protecting the surface of foil and other thin sheet materials before and during high-temperature and high pressure laminating
JP3506519B2 (ja) 1995-03-06 2004-03-15 リンテック株式会社 粘接着テープおよびその使用方法
US6007920A (en) * 1996-01-22 1999-12-28 Texas Instruments Japan, Ltd. Wafer dicing/bonding sheet and process for producing semiconductor device
JPH09291258A (ja) * 1996-04-26 1997-11-11 Lintec Corp 粘着剤組成物およびこれを用いた粘着シート
DE19649263C1 (de) * 1996-11-28 1998-01-15 Herberts Gmbh Wäßrige Schutzüberzugsmittel und deren Verwendung
JPH10335271A (ja) 1997-06-02 1998-12-18 Texas Instr Japan Ltd ウェハ貼着用シートおよび半導体装置の製造方法
US6023094A (en) * 1998-01-14 2000-02-08 National Semiconductor Corporation Semiconductor wafer having a bottom surface protective coating
JP3605651B2 (ja) * 1998-09-30 2004-12-22 日立化成工業株式会社 半導体装置の製造方法
EP1125764B1 (en) * 1998-10-01 2007-12-05 Nissha Printing Co., Ltd. Transfer material, surface-protective sheet, and process for producing molded article with these
US6245382B1 (en) 1999-02-24 2001-06-12 Datacard, Inc. Method for making protective film
JP3865184B2 (ja) * 1999-04-22 2007-01-10 富士通株式会社 半導体装置の製造方法
JP3830699B2 (ja) * 1999-11-11 2006-10-04 株式会社東芝 事故点標定システム
JP3544362B2 (ja) * 2001-03-21 2004-07-21 リンテック株式会社 半導体チップの製造方法

Also Published As

Publication number Publication date
MXPA02003032A (es) 2003-08-20
DE60225084T2 (de) 2009-02-19
EP1852906B1 (en) 2015-04-29
US20080260982A1 (en) 2008-10-23
CN1217406C (zh) 2005-08-31
MY135433A (en) 2008-04-30
MY143879A (en) 2011-07-15
JP3544362B2 (ja) 2004-07-21
EP1244143A3 (en) 2004-11-17
CN1684225A (zh) 2005-10-19
TW533532B (en) 2003-05-21
PT2911189T (pt) 2020-05-11
EP1244143B1 (en) 2008-02-20
EP1852906A2 (en) 2007-11-07
EP1852906A3 (en) 2009-04-01
US20020137309A1 (en) 2002-09-26
PT1244143E (pt) 2008-03-11
US7235465B2 (en) 2007-06-26
US7408259B2 (en) 2008-08-05
EP1244143A2 (en) 2002-09-25
KR20020075256A (ko) 2002-10-04
PT1852906E (pt) 2015-07-22
US6919262B2 (en) 2005-07-19
DE60225084D1 (de) 2008-04-03
CN100370581C (zh) 2008-02-20
KR100681665B1 (ko) 2007-02-09
US20050186762A1 (en) 2005-08-25
EP2911189A1 (en) 2015-08-26
US20050184402A1 (en) 2005-08-25
CN1375866A (zh) 2002-10-23
JP2002280329A (ja) 2002-09-27
EP2911189B1 (en) 2020-04-29

Similar Documents

Publication Publication Date Title
PT2911189T (pt) Folha para formar uma película protetora para chips e processo para produzir chips semicondutores
SG97938A1 (en) Method to prevent die attach adhesive contamination in stacked chips
TWI365529B (en) Method for forming a semiconductor package and structure thereof
EP1122776B8 (en) Process for producing semiconductor chips
EP1535657A4 (en) MODIFIED SUBSTRATE AND METHOD FOR PRODUCING MODIFIED SUBSTRATE
HK1038439A1 (zh) 半導體器件及其制造方法
EP1635396A4 (en) LAMINATED SEMICONDUCTOR SUBSTRATE AND PROCESS FOR ITS MANUFACTURE
AU2001296332A1 (en) Structure and process for reducing die corner and edge stresses in microelectronic packages
AU2001234993A1 (en) A process for forming a semiconductor structure
PL363685A1 (en) Process for directly bonding rubber to at least a second substrate, and the resulting article
EP1453096A4 (en) Glued fabric and method for making the glued wafer
HK1075236A1 (en) Contact lens package and method for reducing the adherence of a contact lens to its package
HUP0402509A3 (en) Packaging and sealing tool for production thereof
SG97981A1 (en) Process for producing an ic chip having a protective layer
AU2002329376A1 (en) An electronic package having a thermal stretching layer
HK1065619A1 (en) Method for making an article comprising at least a silicon chip
SG106156A1 (en) Methods for producing a semiconductor component and semiconductor component
GB0009280D0 (en) Method of cystallising a semiconductor film
EP1285744A4 (en) PROCESS FOR PRODUCING A PACKAGING LAMINATE
SG90228A1 (en) Semiconductor device adhesive layer structure and process for forming structure
AU2003248343A1 (en) Process for producing semiconductor device
AU780682C (en) Method and apparatus to aid in forming a package
AU2003287660A8 (en) Process for using protective layers in the fabrication of electronic devices
SG114480A1 (en) Method for producing a flip chip package
SG107567A1 (en) Method and apparatus for forming a flip chip semiconductor package and method for producing a substrate for the flip chip semiconductor package

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130118

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20140117

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20150119

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20160119

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20170119

Year of fee payment: 11

FPAY Annual fee payment

Payment date: 20180119

Year of fee payment: 12

J204 Request for invalidation trial [patent]
FPAY Annual fee payment

Payment date: 20190117

Year of fee payment: 13

J301 Trial decision

Free format text: TRIAL NUMBER: 2018100003140; TRIAL DECISION FOR INVALIDATION REQUESTED 20180928

Effective date: 20200224

J302 Written judgement (patent court)

Free format text: TRIAL NUMBER: 2020200003836; JUDGMENT (PATENT COURT) FOR INVALIDATION REQUESTED 20200501

Effective date: 20210129

J303 Written judgement (supreme court)

Free format text: TRIAL NUMBER: 2021300010381; JUDGMENT (SUPREME COURT) FOR INVALIDATION REQUESTED 20210305

Effective date: 20210624