KR100673879B1 - 전자 부품, 유전체 자기 조성물 및 그 제조 방법 - Google Patents
전자 부품, 유전체 자기 조성물 및 그 제조 방법 Download PDFInfo
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- KR100673879B1 KR100673879B1 KR1020040094591A KR20040094591A KR100673879B1 KR 100673879 B1 KR100673879 B1 KR 100673879B1 KR 1020040094591 A KR1020040094591 A KR 1020040094591A KR 20040094591 A KR20040094591 A KR 20040094591A KR 100673879 B1 KR100673879 B1 KR 100673879B1
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Abstract
Description
Claims (12)
- 유전체입자를 함유하는 유전체 자기 조성물을 제조하는 방법으로서,주성분 원료 및 부성분 원료를 함유하는 유전체 원료를 준비하는 공정과,상기 유전체 원료를 소성하는 공정을 가지고,상기 부성분 원료가, Mg의 산화물 및 소성 후에 Mg의 산화물이 되는 화합물 중 1종 이상과,Mn의 산화물, Cr의 산화물 및 소성 후에 이들 산화물이 되는 화합물 중 1종 이상을 함유하고,각각, 주성분 원료 100몰에 대하여, MgO, MnO, Cr2O3 환산으로,MgO:0.1∼3몰,MnO+Cr2O3:0∼0.5몰(단, 0은 포함하지 않음)이며,소성하기 전의 상기 주성분 원료가, ABO3로 표시되는 페로브스카이트형 결정 구조인 티탄산바륨 원료 분말이고, A 사이트 성분과 B 사이트 성분의 비 A/B가 몰비로 1.006≤A/B≤1.035, 비표면적이 15∼50㎡/g인 원료 분말을 이용하는 것을 특징으로 하는 유전체 자기 조성물의 제조 방법.
- 제1항에 있어서, 상기 부성분 원료가, 추가로, V의 산화물, W의 산화물, Ta의 산화물, Nb의 산화물 및 소성 후에 이들 산화물이 되는 화합물 중 1종 이상을 함유하고,주성분 원료 100몰에 대하여, V2O5, WO3, Ta2O5, Nb2O5 환산으로,V2O5+WO3+Ta2O5+Nb2O5:0∼0.5몰(단, O는 포함하지 않음)인 것을 특징으로 하는 유전체 자기 조성물의 제조 방법.
- 제1항에 있어서, 상기 부성분 원료가, 추가로, R(단, R은 Sc, Er, Tm, Yb, Lu, Y, Dy, Ho, Tb, Gd 및 Eu 중에서 선택되는 1종 또는 2종 이상)의 산화물 및 소성 후에 R의 산화물이 되는 화합물 중 1종 이상을 함유하고,주성분 원료 100몰에 대하여, R2O3 환산으로, 0∼5몰(단, 0은 포함하지 않음)인 것을 특징으로 하는 유전체 자기 조성물의 제조 방법.
- 제3항에 있어서, 상기 R의 산화물 및 소성 후에 R의 산화물이 되는 화합물이, Y의 산화물, Dy의 산화물, Ho의 산화물 및 소성 후에 이들 산화물이 되는 화합물 중 1종 이상인 것을 특징으로 하는 유전체 자기 조성물의 제조 방법.
- 제1항에 있어서, 상기 부성분 원료가, 추가로, Si의 산화물 및 소성 후에 Si의 산화물이 되는 화합물 중 1종 이상을 함유하고,주성분 원료 100몰에 대하여, SiO2 환산으로, 0.5∼12몰인 것을 특징으로 하는 유전체 자기 조성물의 제조 방법.
- 제1항에 있어서, 상기 부성분 원료가, 추가로, Ba의 산화물, Sr의 산화물, Ca의 산화물 및 소성 후에 이들 산화물이 되는 화합물 중 적어도 2종을 함유하고,주성분 원료 100몰에 대하여, BaO, SrO, CaO 환산으로,BaO + SrO + CaO : 0.5∼12몰인 것을 특징으로 하는 유전체 자기 조성물의 제조 방법.
- 제1항에 있어서, 상기 티탄산바륨 원료 분말의 상기 A 사이트를 구성하는 성분이, Ba, Sr 및 Ca 중에서 선택되는 1종 또는 2종 이상을 함유하고, 상기 B사이트를 구성하는 성분이, Ti 및 Zr로부터 선택되는 1종 또는 2종을 함유하는 것을 특징으로 하는 유전체 자기 조성물의 제조 방법.
- 유전체 입자를 함유하여 이루어지고,주성분 원료 및 부성분 원료를 함유하는 유전체 원료를 소성함으로써 얻어지는 유전체 자기조성물로서,상기 부성분 원료로서, Mg의 산화물 및 소성 후에 Mg의 산화물이 되는 화합물 중 1종 이상과,Mn의 산화물, Cr의 산화물 및 소성 후에 이들 산화물이 되는 화합물 중 1종 이상을 함유하고,각각, 주성분 원료 100 몰에 대하여 MgO, MnO, Cr2O3 환산으로,MgO : 0.1∼3몰,MnO + Cr2O3 : 0∼0.5몰(단, O는 포함하지 않음)인 원료분말을 사용하고,또한, 소성하기 전의 상기 주성분 원료로서, ABO3으로 표시된 페로브스카이트형 결정구조인 티탄산 바륨 원료 분말이고, A 사이트 성분과 B 사이트 성분의 비 A/B가 몰비로 1.006≤A/B≤1.035, 비표면적이 15∼50㎡/g인 원료분말을 이용하여 얻어지고,상기 유전체 자기 조성물을 구성하는 유전체 입자의 평균입경이 0.02 ㎛ 이상 0.2㎛이하인 것을 특징으로 하는 유전체 자기 조성물.
- 제8항에 있어서, 상기 유전체 자기 조성물을 구성하는 소성 후의 유전체 입자의 평균 입자 직경이 0.2㎛ 이하인 것을 특징으로 하는 유전체 자기 조성물.
- 제8항 기재의 유전체 자기 조성물로 구성되어 있는 유전체층을 갖는 것을 특징으로 하는 전자 부품.
- 제8항 기재의 유전체 자기 조성물로 구성되어 있는 유전체층과 내부 전극층이 교대로 적층되어 있는 콘덴서 소자 본체를 갖는 것을 특징으로 하는 적층 세라믹 콘덴서.
- 제11항에 있어서, 상기 유전체층의 두께가 4.5㎛ 이하인 것을 특징으로 하는 적층 세라믹 콘덴서.
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