KR100647516B1 - 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트의 박리방법 - Google Patents

포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트의 박리방법 Download PDF

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Publication number
KR100647516B1
KR100647516B1 KR1020040048621A KR20040048621A KR100647516B1 KR 100647516 B1 KR100647516 B1 KR 100647516B1 KR 1020040048621 A KR1020040048621 A KR 1020040048621A KR 20040048621 A KR20040048621 A KR 20040048621A KR 100647516 B1 KR100647516 B1 KR 100647516B1
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KR
South Korea
Prior art keywords
photoresist
compound
stripper composition
quinolinol
weight
Prior art date
Application number
KR1020040048621A
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English (en)
Korean (ko)
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KR20050002573A (ko
Inventor
이혁진
김병묵
송선영
홍헌표
Original Assignee
동우 화인켐 주식회사
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Publication of KR20050002573A publication Critical patent/KR20050002573A/ko
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Publication of KR100647516B1 publication Critical patent/KR100647516B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/34—Imagewise removal by selective transfer, e.g. peeling away
    • G03F7/343—Lamination or delamination methods or apparatus for photolitographic photosensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020040048621A 2003-06-26 2004-06-26 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트의 박리방법 KR100647516B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20030042148 2003-06-26
KR1020030042147 2003-06-26
KR20030042147 2003-06-26
KR1020030042148 2003-06-26

Publications (2)

Publication Number Publication Date
KR20050002573A KR20050002573A (ko) 2005-01-07
KR100647516B1 true KR100647516B1 (ko) 2006-11-23

Family

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Application Number Title Priority Date Filing Date
KR1020040048621A KR100647516B1 (ko) 2003-06-26 2004-06-26 포토레지스트 박리액 조성물 및 이를 이용한 포토레지스트의 박리방법

Country Status (4)

Country Link
JP (1) JP3953476B2 (ja)
KR (1) KR100647516B1 (ja)
CN (1) CN1261827C (ja)
TW (1) TWI315030B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140060910A (ko) * 2012-11-13 2014-05-21 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR20200116443A (ko) * 2019-10-01 2020-10-12 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물

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JP4202859B2 (ja) 2003-08-05 2008-12-24 花王株式会社 レジスト用剥離剤組成物
JP2005075924A (ja) * 2003-08-29 2005-03-24 Neos Co Ltd シリカスケール除去剤
JP4741315B2 (ja) * 2005-08-11 2011-08-03 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． ポリマー除去組成物
KR100893279B1 (ko) * 2006-08-03 2009-04-17 테크노세미켐 주식회사 반도체 제조용 감광성수지 제거제 조성물
KR100893280B1 (ko) * 2006-08-03 2009-04-17 테크노세미켐 주식회사 반도체 제조용 감광성수지 제거제 조성물
KR20070035722A (ko) * 2005-09-28 2007-04-02 동우 화인켐 주식회사 포토레지스트 박리 조성물 및 이를 이용한 반도체 소자의제조방법
KR100752446B1 (ko) * 2005-12-26 2007-08-24 리퀴드테크놀로지(주) 감광성 내식각막의 잔사제거용 조성물
JP2008058623A (ja) * 2006-08-31 2008-03-13 Tokyo Ohka Kogyo Co Ltd フォトレジスト用剥離液およびこれを用いた基板の処理方法
JP5007089B2 (ja) * 2006-09-08 2012-08-22 富士フイルム株式会社 レジストの剥離方法
CN102662304B (zh) * 2007-01-25 2016-12-14 新应材股份有限公司 一种双面微影蚀刻制程
KR101449053B1 (ko) 2008-11-26 2014-10-08 동우 화인켐 주식회사 포토레지스트 잔류물 박리액 조성물 및 이를 이용한 박리 방법
JP5238043B2 (ja) * 2009-02-03 2013-07-17 出光興産株式会社 レジスト剥離剤組成物及びそれを用いたレジスト剥離方法
WO2010118916A1 (en) 2009-04-16 2010-10-21 Basf Se Organic photoresist stripper composition
KR100950779B1 (ko) * 2009-08-25 2010-04-02 엘티씨 (주) Ｔｆｔ―ｌｃｄ 통합공정용 포토레지스트 박리제 조성물
US8518865B2 (en) * 2009-08-31 2013-08-27 Air Products And Chemicals, Inc. Water-rich stripping and cleaning formulation and method for using same
KR101169332B1 (ko) * 2010-05-12 2012-07-30 주식회사 이엔에프테크놀로지 포토레지스트 박리액 조성물
KR101089211B1 (ko) * 2010-12-02 2011-12-02 엘티씨 (주) 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물
CN103064263B (zh) * 2011-08-22 2015-06-10 东友精细化工有限公司 抗蚀剂剥离液组合物及利用该组合物的抗蚀剂剥离方法
CN104169801B (zh) * 2012-03-16 2019-12-17 巴斯夫欧洲公司 光致抗蚀剂剥离和清洁组合物、其制备方法及其用途
KR101668063B1 (ko) * 2013-05-07 2016-10-20 주식회사 엘지화학 포토레지스트 제거용 스트리퍼 조성물 및 이를 사용한 포토레지스트의 박리방법
SG11201603122XA (en) 2013-10-21 2016-05-30 Fujifilm Electronic Materials Cleaning formulations for removing residues on surfaces
CN104635438B (zh) * 2013-11-12 2020-06-09 安集微电子科技（上海）股份有限公司 一种光刻胶剥离液
CN105873691B (zh) 2013-12-06 2018-04-20 富士胶片电子材料美国有限公司 用于去除表面上的残余物的清洗调配物
CN105022237B (zh) * 2014-04-23 2020-07-03 安集微电子科技（上海）股份有限公司 一种金属低刻蚀光刻胶剥离液
KR101710170B1 (ko) * 2014-08-20 2017-02-27 주식회사 엘지화학 포토레지스트용 스트리퍼 폐액의 재생 방법
KR101697336B1 (ko) * 2016-03-03 2017-01-17 주식회사 엘지화학 액정 배향막의 제조방법
JP6772080B2 (ja) * 2016-03-28 2020-10-21 三菱製紙株式会社 剥離方法
CN107544215A (zh) * 2016-06-29 2018-01-05 深圳新宙邦科技股份有限公司 一种光刻胶剥离液
CN106019863B (zh) * 2016-07-14 2019-08-09 江阴江化微电子材料股份有限公司 一种高世代平板铜制程光阻剥离液
CN108535971B (zh) * 2017-03-03 2023-09-12 易案爱富科技有限公司 光致抗蚀剂去除用剥离液组合物
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US11460778B2 (en) * 2018-04-12 2022-10-04 Versum Materials Us, Llc Photoresist stripper
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CN112805630B (zh) * 2019-11-20 2022-04-05 松下知识产权经营株式会社 抗蚀剂剥离液
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CN112540515B (zh) * 2020-12-16 2023-11-21 江苏艾森半导体材料股份有限公司 一种光刻胶去胶液及其制备方法和应用
CN112731777A (zh) * 2020-12-17 2021-04-30 芯越微电子材料(嘉兴)有限公司 一种适用半导体集成电路的光刻胶剥离液及制备方法
CN114035411B (zh) * 2021-10-19 2023-11-10 湖北兴福电子材料股份有限公司 一种光刻胶去膜液
CN115291483B (zh) * 2022-09-02 2023-08-29 昆山晶科微电子材料有限公司 一种半导体剥离液及其制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140060910A (ko) * 2012-11-13 2014-05-21 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR102032321B1 (ko) * 2012-11-13 2019-10-15 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR20200116443A (ko) * 2019-10-01 2020-10-12 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물
KR102324927B1 (ko) * 2019-10-01 2021-11-12 동우 화인켐 주식회사 얼룩 발생 방지용 레지스트 박리액 조성물

Also Published As

Publication number Publication date
TWI315030B (en) 2009-09-21
CN1261827C (zh) 2006-06-28
JP3953476B2 (ja) 2007-08-08
JP2005043874A (ja) 2005-02-17
CN1577111A (zh) 2005-02-09
KR20050002573A (ko) 2005-01-07

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