KR100639692B1 - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR100639692B1
KR100639692B1 KR1020050005308A KR20050005308A KR100639692B1 KR 100639692 B1 KR100639692 B1 KR 100639692B1 KR 1020050005308 A KR1020050005308 A KR 1020050005308A KR 20050005308 A KR20050005308 A KR 20050005308A KR 100639692 B1 KR100639692 B1 KR 100639692B1
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KR
South Korea
Prior art keywords
insulating film
semiconductor region
floating field
field plate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020050005308A
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English (en)
Korean (ko)
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KR20050077015A (ko
Inventor
하타데카즈나리
Original Assignee
미쓰비시덴키 가부시키가이샤
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Publication of KR20050077015A publication Critical patent/KR20050077015A/ko
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Publication of KR100639692B1 publication Critical patent/KR100639692B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/655—Lateral DMOS [LDMOS] FETs having edge termination structures
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03C—DOMESTIC PLUMBING INSTALLATIONS FOR FRESH WATER OR WASTE WATER; SINKS
    • E03C1/00—Domestic plumbing installations for fresh water or waste water; Sinks
    • E03C1/12—Plumbing installations for waste water; Basins or fountains connected thereto; Sinks
    • E03C1/26—Object-catching inserts or similar devices for waste pipes or outlets
    • E03C1/264—Separate sieves or similar object-catching inserts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/159—Shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/835—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] comprising LDMOS
    • E—FIXED CONSTRUCTIONS
    • E03—WATER SUPPLY; SEWERAGE
    • E03C—DOMESTIC PLUMBING INSTALLATIONS FOR FRESH WATER OR WASTE WATER; SINKS
    • E03C2201/00—Details, devices or methods not otherwise provided for
    • E03C2201/40—Arrangement of water treatment devices in domestic plumbing installations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Public Health (AREA)
  • Water Supply & Treatment (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020050005308A 2004-01-26 2005-01-20 반도체장치 Expired - Lifetime KR100639692B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004016663A JP4731816B2 (ja) 2004-01-26 2004-01-26 半導体装置
JPJP-P-2004-00016663 2004-01-26

Publications (2)

Publication Number Publication Date
KR20050077015A KR20050077015A (ko) 2005-07-29
KR100639692B1 true KR100639692B1 (ko) 2006-10-31

Family

ID=34792485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050005308A Expired - Lifetime KR100639692B1 (ko) 2004-01-26 2005-01-20 반도체장치

Country Status (6)

Country Link
US (1) US7122875B2 (https=)
JP (1) JP4731816B2 (https=)
KR (1) KR100639692B1 (https=)
CN (1) CN100472803C (https=)
DE (1) DE102004059620B4 (https=)
TW (1) TWI253177B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101213068B1 (ko) * 2009-04-06 2012-12-18 미쓰비시덴키 가부시키가이샤 반도체장치 및 그의 제조방법

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US7679111B2 (en) * 2005-09-16 2010-03-16 International Rectifier Corporation Termination structure for a power semiconductor device
JP2007318062A (ja) * 2006-04-27 2007-12-06 Matsushita Electric Ind Co Ltd 高耐圧半導体スイッチング素子
JP4935192B2 (ja) * 2006-05-31 2012-05-23 三菱電機株式会社 半導体装置
WO2008101989A1 (de) * 2007-02-22 2008-08-28 Forschungsverbund Berlin E.V. Halbleiterbauelement und verfahren zu dessen herstellung
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US20090096039A1 (en) * 2007-10-10 2009-04-16 United Microelectronics Corp. High-voltage device and manufacturing method of top layer in high-voltage device
JP5371358B2 (ja) * 2008-09-29 2013-12-18 ローム株式会社 半導体装置および半導体装置の製造方法
JP5312889B2 (ja) * 2008-09-29 2013-10-09 ローム株式会社 半導体装置
JP5487851B2 (ja) * 2008-09-30 2014-05-14 サンケン電気株式会社 半導体装置
CN101414637B (zh) * 2008-12-01 2010-08-25 西安电子科技大学 凹槽绝缘交叠栅异质结场效应晶体管
JP5182376B2 (ja) * 2008-12-10 2013-04-17 トヨタ自動車株式会社 半導体装置
JP5376365B2 (ja) 2009-04-16 2013-12-25 三菱電機株式会社 半導体装置
JP5460279B2 (ja) * 2009-12-11 2014-04-02 株式会社日立製作所 半導体装置およびその製造方法
JP5517688B2 (ja) * 2010-03-24 2014-06-11 三菱電機株式会社 半導体装置
JP5594515B2 (ja) * 2010-03-26 2014-09-24 日本電気株式会社 半導体装置、電子装置、半導体装置の製造方法、および半導体装置の動作方法
JP5505499B2 (ja) * 2010-06-04 2014-05-28 富士電機株式会社 半導体装置および駆動回路
JP5601072B2 (ja) * 2010-08-03 2014-10-08 サンケン電気株式会社 半導体装置
JP2012134198A (ja) * 2010-12-20 2012-07-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP5703829B2 (ja) * 2011-02-24 2015-04-22 サンケン電気株式会社 半導体装置
JP5716591B2 (ja) * 2011-07-26 2015-05-13 三菱電機株式会社 半導体装置
JP5979836B2 (ja) * 2011-09-09 2016-08-31 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US9093432B2 (en) 2011-09-23 2015-07-28 Sanken Electric Co., Ltd. Semiconductor device
JP5435129B2 (ja) 2011-10-26 2014-03-05 トヨタ自動車株式会社 半導体装置
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
JP5772987B2 (ja) * 2012-01-12 2015-09-02 トヨタ自動車株式会社 半導体装置とその製造方法
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US20130334648A1 (en) * 2012-06-15 2013-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and Apparatus for High Voltage Diodes
US9245879B2 (en) 2012-06-29 2016-01-26 Power Integrations, Inc. Static discharge system
US20140001479A1 (en) * 2012-06-29 2014-01-02 Power Integrations, Inc. Switching device with charge distribution structure
US10192981B2 (en) 2012-06-29 2019-01-29 Power Integrations, Inc. Switching device with charge distribution structure
US10224923B2 (en) * 2012-10-31 2019-03-05 Nxp Usa, Inc. Method and apparatus for driving a power transistor gate
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KR101213068B1 (ko) * 2009-04-06 2012-12-18 미쓰비시덴키 가부시키가이샤 반도체장치 및 그의 제조방법
US8994141B2 (en) 2009-04-06 2015-03-31 Mitsubishi Electric Corporation Semiconductor device and method for fabricating the same
US9741788B2 (en) 2009-04-06 2017-08-22 Mitsubishi Electric Corporation Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
TWI253177B (en) 2006-04-11
US7122875B2 (en) 2006-10-17
TW200525761A (en) 2005-08-01
CN1649168A (zh) 2005-08-03
DE102004059620A1 (de) 2005-08-18
CN100472803C (zh) 2009-03-25
DE102004059620B4 (de) 2011-07-28
JP4731816B2 (ja) 2011-07-27
KR20050077015A (ko) 2005-07-29
US20050161761A1 (en) 2005-07-28
JP2005209983A (ja) 2005-08-04

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