KR100624683B1 - 트렌치 게이트 전극을 포함하는 금속-절연체-반도체 장치및 이의 제조 방법 - Google Patents

트렌치 게이트 전극을 포함하는 금속-절연체-반도체 장치및 이의 제조 방법 Download PDF

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KR100624683B1
KR100624683B1 KR1020047002073A KR20047002073A KR100624683B1 KR 100624683 B1 KR100624683 B1 KR 100624683B1 KR 1020047002073 A KR1020047002073 A KR 1020047002073A KR 20047002073 A KR20047002073 A KR 20047002073A KR 100624683 B1 KR100624683 B1 KR 100624683B1
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trench
insulating layer
region
adjacent
gate
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Korean (ko)
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KR20040051584A (ko
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모하메드 엔. 다르위쉬
프레데릭크 피. 질레스
캄홍 루이
쿠오-인 첸
테리르키레
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실리코닉스 인코퍼레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions

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  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020047002073A 2001-08-10 2002-07-19 트렌치 게이트 전극을 포함하는 금속-절연체-반도체 장치및 이의 제조 방법 Expired - Lifetime KR100624683B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/927,320 2001-08-10
US09/927,320 US6882000B2 (en) 2001-08-10 2001-08-10 Trench MIS device with reduced gate-to-drain capacitance
PCT/US2002/022937 WO2003015179A2 (en) 2001-08-10 2002-07-19 Mis device having a trench gate electrode and method of making the same

Publications (2)

Publication Number Publication Date
KR20040051584A KR20040051584A (ko) 2004-06-18
KR100624683B1 true KR100624683B1 (ko) 2006-09-19

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Country Status (6)

Country Link
US (2) US6882000B2 (https=)
EP (1) EP1417717A2 (https=)
JP (2) JP2004538648A (https=)
KR (1) KR100624683B1 (https=)
TW (1) TW552680B (https=)
WO (1) WO2003015179A2 (https=)

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Also Published As

Publication number Publication date
WO2003015179A3 (en) 2003-12-04
US20030030092A1 (en) 2003-02-13
JP2009283969A (ja) 2009-12-03
JP5500898B2 (ja) 2014-05-21
WO2003015179A2 (en) 2003-02-20
US20030062570A1 (en) 2003-04-03
US6921697B2 (en) 2005-07-26
KR20040051584A (ko) 2004-06-18
US6882000B2 (en) 2005-04-19
EP1417717A2 (en) 2004-05-12
TW552680B (en) 2003-09-11
JP2004538648A (ja) 2004-12-24

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