KR100600974B1 - 고순도 니켈 또는 니켈 합금 타겟트 및 그 제조방법 - Google Patents
고순도 니켈 또는 니켈 합금 타겟트 및 그 제조방법 Download PDFInfo
- Publication number
- KR100600974B1 KR100600974B1 KR1020047009389A KR20047009389A KR100600974B1 KR 100600974 B1 KR100600974 B1 KR 100600974B1 KR 1020047009389 A KR1020047009389 A KR 1020047009389A KR 20047009389 A KR20047009389 A KR 20047009389A KR 100600974 B1 KR100600974 B1 KR 100600974B1
- Authority
- KR
- South Korea
- Prior art keywords
- nickel
- target
- uniformity
- nickel alloy
- film
- Prior art date
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 125
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 65
- 229910000990 Ni alloy Inorganic materials 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title description 20
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 230000005291 magnetic effect Effects 0.000 claims abstract description 20
- 230000035699 permeability Effects 0.000 claims abstract description 19
- 238000005242 forging Methods 0.000 claims description 20
- 238000005096 rolling process Methods 0.000 claims description 16
- 238000005097 cold rolling Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 62
- 239000000523 sample Substances 0.000 description 18
- 238000004544 sputter deposition Methods 0.000 description 16
- 238000005259 measurement Methods 0.000 description 10
- 239000002994 raw material Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 150000002815 nickel Chemical class 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005336 cracking Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910001000 nickel titanium Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229920013633 Fortron Polymers 0.000 description 1
- 239000004738 Fortron® Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003286 Ni-Mn Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018559 Ni—Nb Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Thermal Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
Claims (7)
- 삭제
- 마그네트론 스퍼터링용 고순도 니켈 또는 니켈 합금 타겟트로서, 이 타겟트의 투자율이 100 이상이며, 평균 결정 입경의 5배 이상으로 입성장한 조대 결정립을 포함하지 않는 것을 특징으로 하는 스퍼터 막의 균일성이 우수한 마그네트론 스퍼터링용 고순도 니켈 또는 니켈 합금 타겟트
- 순도가 4N5(99.995 중량%) 이상인 고순도 니켈 또는 니켈 합금을 열간 단조한 후, 30% 이상의 압연율로 냉간 압연하고, 이것을 다시 300℃ 이상의 온도에서 재결정시킨 열처리 공정으로 이루어지며, 상기 냉간 압연과 열처리를 적어도 2회 이상 반복하는 것을 특징으로 하는 타겟트의 투자율이 100 이상이며, 스퍼터 막의 균일성이 우수한 마그네트론 스퍼터링용 고순도 니켈 또는 니켈 합금 타겟트의 제조방법
- 제3항에 있어서, 순도가 5N(99.999 중량%) 이상인 것을 특징으로 하는 스퍼터 막의 균일성이 우수한 마그네트론 스퍼터링용 고순도 니켈 또는 니켈 합금 타겟트의 제조방법
- 제3항 또는 제4항에 중 어느 한 항에 있어서, 고순도 니켈 또는 니켈 합금의 열간 단조 시에, 니딩 단조하는 것을 특징으로 하는 스퍼터 막의 균일성이 우수한 마그네트론 스퍼터링용 고순도 니켈 또는 니켈 합금 타겟트의 제조방법
- 제3항 또는 제4항 중 어느 한 항에 있어서, 평균 결정 입경의 5배 이상으로 입성장한 조대 결정립을 포함하지 않는 것을 특징으로 하는 스퍼터 막의 균일성이 우수한 마그네트론 스퍼터링용 고순도 니켈 또는 니켈 합금 타겟트의 제조방법
- 제3항 또는 제4항 중 어느 한 항에 있어서, 최종적으로 300℃ 이상 600℃ 미만의 온도에서 풀 아니링 하는 것을 특징으로 하는 스퍼터 막의 균일성이 우수한 마그네트론 스퍼터링용 고순도 니켈 또는 니켈 합금 타겟트의 제조방법
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002009981A JP4376487B2 (ja) | 2002-01-18 | 2002-01-18 | 高純度ニッケル合金ターゲットの製造方法 |
JPJP-P-2002-00009981 | 2002-01-18 | ||
PCT/JP2002/012438 WO2003062487A1 (fr) | 2002-01-18 | 2002-11-28 | Cible en nickel ou alliage de nickel haute purete et son procede de production |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040068595A KR20040068595A (ko) | 2004-07-31 |
KR100600974B1 true KR100600974B1 (ko) | 2006-07-13 |
Family
ID=27605983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047009389A KR100600974B1 (ko) | 2002-01-18 | 2002-11-28 | 고순도 니켈 또는 니켈 합금 타겟트 및 그 제조방법 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7740718B2 (ko) |
EP (1) | EP1467000B1 (ko) |
JP (1) | JP4376487B2 (ko) |
KR (1) | KR100600974B1 (ko) |
CN (1) | CN1314832C (ko) |
DE (1) | DE60235838D1 (ko) |
TW (1) | TW583328B (ko) |
WO (1) | WO2003062487A1 (ko) |
Families Citing this family (28)
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CN1715454A (zh) * | 2001-08-01 | 2006-01-04 | 株式会社日矿材料 | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 |
JP4204978B2 (ja) * | 2001-12-19 | 2009-01-07 | 日鉱金属株式会社 | 磁性体ターゲットとバッキングプレートとの接合方法及び磁性体ターゲット |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
CN101186979B (zh) * | 2003-10-07 | 2012-06-13 | Jx日矿日石金属株式会社 | 高纯度Ni-V合金的制造方法 |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
EP1704266A2 (en) * | 2003-12-22 | 2006-09-27 | Cabot Corporation | High integrity sputtering target material and method for producing bulk quantities of same |
CN100567535C (zh) * | 2004-03-01 | 2009-12-09 | 日矿金属株式会社 | Ni-Pt合金和Ni-Pt合金靶 |
CN101061252A (zh) * | 2004-11-15 | 2007-10-24 | 日矿金属株式会社 | 用于制造金属玻璃膜的溅射靶及其制造方法 |
WO2006051736A1 (ja) * | 2004-11-15 | 2006-05-18 | Nippon Mining & Metals Co., Ltd. | 水素分離膜及び水素分離膜形成用スパッタリングターゲット及びその製造方法 |
EE05493B1 (et) * | 2006-03-07 | 2011-12-15 | Cabot Corporation | Meetod l?pliku paksusega metallesemete valmistamiseks, saadud metallplaat ja selle valmistamiseks kasutatav BCC- metall |
US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
JP2009167530A (ja) | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
SG172268A1 (en) * | 2009-04-17 | 2011-07-28 | Jx Nippon Mining & Metals Corp | Barrier film for semiconductor wiring, sintered compact sputtering target and method of producing the sputtering target |
TWI502092B (zh) * | 2010-03-19 | 2015-10-01 | Jx Nippon Mining & Metals Corp | Nickel alloy sputtering target, Ni alloy film and silicon nitride film |
CN103459657B (zh) * | 2011-04-18 | 2015-05-20 | 株式会社东芝 | 高纯度Ni溅射靶及其制造方法 |
CN102864421A (zh) * | 2011-07-05 | 2013-01-09 | 北京有色金属研究总院 | 一种细晶高纯镍靶材制造方法 |
CN102400073A (zh) * | 2011-11-18 | 2012-04-04 | 宁波江丰电子材料有限公司 | 镍靶坯及靶材的制造方法 |
CN102418058A (zh) * | 2011-12-02 | 2012-04-18 | 宁波江丰电子材料有限公司 | 镍靶坯及靶材的制造方法 |
KR20150023767A (ko) * | 2012-07-04 | 2015-03-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타겟 |
JP5958183B2 (ja) * | 2012-08-27 | 2016-07-27 | 三菱マテリアル株式会社 | Ni又はNi合金スパッタリングターゲット及びその製造方法 |
CN104726829A (zh) * | 2013-12-18 | 2015-06-24 | 有研亿金新材料股份有限公司 | 一种高纯NiPt合金靶材及其制备方法 |
EP3106540B1 (en) | 2014-03-27 | 2018-04-25 | JX Nippon Mining & Metals Corp. | Method of producing a ni-p alloy or a ni-pt-p alloy sputtering target |
CN104190885B (zh) * | 2014-08-28 | 2016-06-01 | 云南钛业股份有限公司 | 一种四枪电子束冷床炉生产巨型高纯镍锭方坯的方法 |
JP6459601B2 (ja) * | 2015-02-17 | 2019-01-30 | 三菱マテリアル株式会社 | Niスパッタリングターゲット |
CN105861999B (zh) * | 2016-04-05 | 2018-08-07 | 基迈克材料科技(苏州)有限公司 | 高纯细晶金属镍热挤压旋转靶材 |
CN105734507B (zh) * | 2016-04-05 | 2018-06-19 | 基迈克材料科技(苏州)有限公司 | 成膜均匀的细晶镍合金旋转靶材及其热挤压优化制备方法 |
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JPH11335821A (ja) * | 1998-05-20 | 1999-12-07 | Japan Energy Corp | 磁性薄膜形成用Ni−Fe合金スパッタリングターゲット、磁性薄膜および磁性薄膜形成用Ni−Fe合金スパッタリングターゲットの製造方法 |
US6342114B1 (en) * | 1999-03-31 | 2002-01-29 | Praxair S.T. Technology, Inc. | Nickel/vanadium sputtering target with ultra-low alpha emission |
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AU2001265309A1 (en) | 2000-06-02 | 2001-12-17 | Honeywell International, Inc. | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
CN1715454A (zh) * | 2001-08-01 | 2006-01-04 | 株式会社日矿材料 | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 |
JP4376487B2 (ja) | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
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CN100567535C (zh) * | 2004-03-01 | 2009-12-09 | 日矿金属株式会社 | Ni-Pt合金和Ni-Pt合金靶 |
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- 2002-11-28 EP EP02788679A patent/EP1467000B1/en not_active Expired - Lifetime
- 2002-11-28 CN CNB028271947A patent/CN1314832C/zh not_active Expired - Lifetime
- 2002-11-28 DE DE60235838T patent/DE60235838D1/de not_active Expired - Lifetime
- 2002-11-28 US US10/498,147 patent/US7740718B2/en active Active
- 2002-11-28 KR KR1020047009389A patent/KR100600974B1/ko active IP Right Grant
- 2002-11-28 WO PCT/JP2002/012438 patent/WO2003062487A1/ja active Application Filing
- 2002-12-05 TW TW091135263A patent/TW583328B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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CN1314832C (zh) | 2007-05-09 |
US20060137782A1 (en) | 2006-06-29 |
JP2003213406A (ja) | 2003-07-30 |
US7618505B2 (en) | 2009-11-17 |
US20040256035A1 (en) | 2004-12-23 |
KR20040068595A (ko) | 2004-07-31 |
EP1467000A4 (en) | 2008-05-21 |
CN1615374A (zh) | 2005-05-11 |
TW200302289A (en) | 2003-08-01 |
JP4376487B2 (ja) | 2009-12-02 |
EP1467000A1 (en) | 2004-10-13 |
DE60235838D1 (de) | 2010-05-12 |
EP1467000B1 (en) | 2010-03-31 |
TW583328B (en) | 2004-04-11 |
WO2003062487A1 (fr) | 2003-07-31 |
US7740718B2 (en) | 2010-06-22 |
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