CN1314832C - 高纯度镍或镍合金靶及其制造方法 - Google Patents
高纯度镍或镍合金靶及其制造方法 Download PDFInfo
- Publication number
- CN1314832C CN1314832C CNB028271947A CN02827194A CN1314832C CN 1314832 C CN1314832 C CN 1314832C CN B028271947 A CNB028271947 A CN B028271947A CN 02827194 A CN02827194 A CN 02827194A CN 1314832 C CN1314832 C CN 1314832C
- Authority
- CN
- China
- Prior art keywords
- target
- nickelalloy
- nickel
- purity
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 118
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 62
- 229910000990 Ni alloy Inorganic materials 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims description 34
- 230000005291 magnetic effect Effects 0.000 claims abstract description 38
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 33
- 230000035699 permeability Effects 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 238000007669 thermal treatment Methods 0.000 claims description 30
- 238000005097 cold rolling Methods 0.000 claims description 26
- 238000005096 rolling process Methods 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 5
- 238000005242 forging Methods 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 230000002349 favourable effect Effects 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 37
- 238000005266 casting Methods 0.000 description 21
- 238000005259 measurement Methods 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 10
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- 239000007858 starting material Substances 0.000 description 10
- 241000950638 Symphysodon discus Species 0.000 description 7
- HOQADATXFBOEGG-UHFFFAOYSA-N isofenphos Chemical compound CCOP(=S)(NC(C)C)OC1=CC=CC=C1C(=O)OC(C)C HOQADATXFBOEGG-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000005294 ferromagnetic effect Effects 0.000 description 5
- 150000002815 nickel Chemical class 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 239000011572 manganese Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 229910001000 nickel titanium Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910000914 Mn alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- ZAUUZASCMSWKGX-UHFFFAOYSA-N manganese nickel Chemical compound [Mn].[Ni] ZAUUZASCMSWKGX-UHFFFAOYSA-N 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910003286 Ni-Mn Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018559 Ni—Nb Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Abstract
Description
锻造温度(起始温度℃) | 冷轧(%) | 热处理(第一次时间) | 冷轧(%) | 热处理(第二次时间) | 晶体结构(μm) | 粗晶粒 | 变异系数(%) | 磁导率 | 膜均一性(%,3σ) | |
实施例1 | 900 | 30 | 300℃×1hr | 30 | 300℃×1hr | 116 | 无 | 13.4 | 121 | 4 |
实施例2 | 900 | 50 | 350℃×1hr | 30 | 350℃×1hr | 137 | 无 | 16.3 | 155 | 9.5 |
实施例3 | 1150 | 40 | 400℃×1hr | 60 | 400℃×1hr | 323 | 无 | 17.2 | 185 | 7.5 |
实施例4 | 1150 | 50 | 500℃×1hr | 50 | 500℃×1hr | 814 | 无 | 19.8 | 221 | 8 |
实施例5 | 1150 | 60 | 600℃×1hr | 30 | 600℃×1hr | 1215 | 无 | 15.6 | 255 | 10 |
对比例1 | 900 | 50 | 300℃×1hr | 无 | 无 | 78 | 有(440μm) | 33 | 110 | 12 |
对比例2 | 1000 | 60 | 500℃×1hr | 无 | 无 | 191 | 有(983μm) | 44.3 | 180 | 14 |
对比例3 | 1150 | 70 | 600℃×1hr | 无 | 无 | 210 | 有(1170μm) | 45.3 | 192 | 15 |
对比例4 | 950 | 80 | 400℃×1hr | 无 | 无 | 105 | 有(612μm) | 65 | 161 | 19 |
对比例5 | 1000 | 50 | 500℃×1hr | 无 | 无 | 182 | 有(912μm) | 37 | 201 | 12 |
对比例6 | 1050 | 60 | 600℃×1hr | 无 | 无 | 305 | 有(1710μm) | 36.4 | 233 | 14 |
对比例7 | 1100 | 70 | 400℃×1hr | 无 | 无 | 120 | 有(800μm) | 67 | 250 | 18 |
对比例8 | 900 | 80 | 600℃×1hr | 无 | 无 | 371 | 有(1960μm) | 44.3 | 255 | 12 |
锻造温度(起始温度℃) | 冷轧(%) | 热处理(第一次时间) | 冷轧(%) | 热处理(第二次时间) | 晶体结构(μm) | 粗晶粒 | 变异系数(%) | 磁导率 | 膜均一性(%,3σ) | |
实施例6 | 750 | 30 | 300℃×1hr | 30 | 300℃×1hr | 23.5 | 无 | 10.5 | 107 | 9.8 |
实施例7 | 900 | 50 | 350℃×1hr | 30 | 350℃×1hr | 75.3 | 无 | 12.2 | 122 | 9.5 |
实施例8 | 1150 | 40 | 400℃×1hr | 60 | 400℃×1hr | 110.3 | 无 | 15.3 | 156 | 6.5 |
实施例9 | 1150 | 50 | 500℃×1hr | 50 | 500℃×1hr | 620 | 无 | 17.5 | 189 | 9.5 |
实施例10 | 1150 | 60 | 600℃×1hr | 30 | 600℃×1hr | 850 | 无 | 14.6 | 235 | 8.2 |
对比例9 | 750 | 50 | 300℃×1hr | 无 | 无 | 19.5 | 有(123μm) | 26 | 110 | 13 |
对比例10 | 900 | 60 | 500℃×1hr | 无 | 无 | 206 | 有(1055μm) | 29 | 182 | 14 |
对比例11 | 1150 | 70 | 600℃×1hr | 无 | 无 | 298 | 有(1588μm) | 64 | 205 | 19 |
对比例12 | 750 | 80 | 400℃×1hr | 无 | 无 | 110 | 有(623μm) | 29 | 150 | 17 |
对比例13 | 900 | 50 | 500℃×1hr | 无 | 无 | 210 | 有(1225μm) | 31 | 166 | 16 |
对比例14 | 1050 | 60 | 600℃×1hr | 无 | 无 | 205 | 有(1150μm) | 28 | 209 | 14 |
对比例15 | 1150 | 70 | 400℃×1hr | 无 | 无 | 89 | 有(520μm) | 46 | 132 | 15 |
对比例16 | 750 | 80 | 600℃×1hr | 无 | 无 | 230 | 有(1365μm) | 68 | 210 | 22 |
锻造温度(起始温度℃) | 冷轧(%) | 热处理(第一次时间) | 冷轧(%) | 热处理(第二次时间) | 晶体结构(μm) | 粗晶粒 | 变异系数(%) | 磁导率 | 膜均一性(%,3σ) | |
实施例11 | 750 | 30 | 300℃×1hr | 30 | 300℃×1hr | 62 | 无 | 15.6 | 105 | 7.2 |
实施例12 | 900 | 50 | 350℃×1hr | 30 | 350℃×1hr | 75.3 | 无 | 13.4 | 122 | 8.2 |
实施例13 | 1150 | 40 | 400℃×1hr | 60 | 400℃×1hr | 110.3 | 无 | 15.3 | 136 | 6.5 |
实施例14 | 1150 | 50 | 500℃×1hr | 50 | 500℃×1hr | 690 | 无 | 18.3 | 170 | 7.5 |
实施例15 | 1150 | 60 | 600℃×1hr | 30 | 600℃×1hr | 1290 | 无 | 19.5 | 215 | 8.1 |
对比例17 | 750 | 50 | 300℃×1hr | 无 | 无 | 36 | 有(189μm) | 35 | 105 | 21 |
对比例18 | 900 | 60 | 500℃×1hr | 无 | 无 | 142 | 有(850μm) | 29 | 190 | 17 |
对比例19 | 1150 | 70 | 600℃×1hr | 无 | 无 | 177 | 有(980μm) | 70.2 | 220 | 19 |
对比例20 | 750 | 80 | 400℃×1hr | 无 | 无 | 42 | 有(213μm) | 38 | 154 | 17 |
对比例21 | 900 | 50 | 500℃×1hr | 无 | 无 | 135 | 有(680μm) | 42 | 177 | 16 |
对比例22 | 1050 | 60 | 600℃×1hr | 无 | 无 | 184 | 有(960μm) | 36 | 209 | 15 |
对比例23 | 1150 | 70 | 400℃×1hr | 无 | 无 | 49 | 有(260μm) | 75 | 145 | 15 |
对比例24 | 750 | 80 | 600℃×1hr | 无 | 无 | 193 | 有(1010μm) | 60 | 175 | 25 |
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9981/2002 | 2002-01-18 | ||
JP2002009981A JP4376487B2 (ja) | 2002-01-18 | 2002-01-18 | 高純度ニッケル合金ターゲットの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1615374A CN1615374A (zh) | 2005-05-11 |
CN1314832C true CN1314832C (zh) | 2007-05-09 |
Family
ID=27605983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028271947A Expired - Lifetime CN1314832C (zh) | 2002-01-18 | 2002-11-28 | 高纯度镍或镍合金靶及其制造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7740718B2 (zh) |
EP (1) | EP1467000B1 (zh) |
JP (1) | JP4376487B2 (zh) |
KR (1) | KR100600974B1 (zh) |
CN (1) | CN1314832C (zh) |
DE (1) | DE60235838D1 (zh) |
TW (1) | TW583328B (zh) |
WO (1) | WO2003062487A1 (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1715454A (zh) * | 2001-08-01 | 2006-01-04 | 株式会社日矿材料 | 高纯镍、由其构成的溅射靶及通过该靶形成的高纯镍薄膜 |
JP4204978B2 (ja) * | 2001-12-19 | 2009-01-07 | 日鉱金属株式会社 | 磁性体ターゲットとバッキングプレートとの接合方法及び磁性体ターゲット |
JP4376487B2 (ja) * | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | 高純度ニッケル合金ターゲットの製造方法 |
JP4466902B2 (ja) * | 2003-01-10 | 2010-05-26 | 日鉱金属株式会社 | ニッケル合金スパッタリングターゲット |
CN101186979B (zh) * | 2003-10-07 | 2012-06-13 | Jx日矿日石金属株式会社 | 高纯度Ni-V合金的制造方法 |
WO2005041290A1 (ja) * | 2003-10-24 | 2005-05-06 | Nikko Materials Co., Ltd. | ニッケル合金スパッタリングターゲット及びニッケル合金薄膜 |
EP1704266A2 (en) * | 2003-12-22 | 2006-09-27 | Cabot Corporation | High integrity sputtering target material and method for producing bulk quantities of same |
CN100567535C (zh) * | 2004-03-01 | 2009-12-09 | 日矿金属株式会社 | Ni-Pt合金和Ni-Pt合金靶 |
CN101061252A (zh) * | 2004-11-15 | 2007-10-24 | 日矿金属株式会社 | 用于制造金属玻璃膜的溅射靶及其制造方法 |
WO2006051736A1 (ja) * | 2004-11-15 | 2006-05-18 | Nippon Mining & Metals Co., Ltd. | 水素分離膜及び水素分離膜形成用スパッタリングターゲット及びその製造方法 |
EE05493B1 (et) * | 2006-03-07 | 2011-12-15 | Cabot Corporation | Meetod l?pliku paksusega metallesemete valmistamiseks, saadud metallplaat ja selle valmistamiseks kasutatav BCC- metall |
US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
JP2009167530A (ja) | 2009-02-10 | 2009-07-30 | Nippon Mining & Metals Co Ltd | ニッケル合金スパッタリングターゲット及びニッケルシリサイド膜 |
SG172268A1 (en) * | 2009-04-17 | 2011-07-28 | Jx Nippon Mining & Metals Corp | Barrier film for semiconductor wiring, sintered compact sputtering target and method of producing the sputtering target |
TWI502092B (zh) * | 2010-03-19 | 2015-10-01 | Jx Nippon Mining & Metals Corp | Nickel alloy sputtering target, Ni alloy film and silicon nitride film |
CN103459657B (zh) * | 2011-04-18 | 2015-05-20 | 株式会社东芝 | 高纯度Ni溅射靶及其制造方法 |
CN102864421A (zh) * | 2011-07-05 | 2013-01-09 | 北京有色金属研究总院 | 一种细晶高纯镍靶材制造方法 |
CN102400073A (zh) * | 2011-11-18 | 2012-04-04 | 宁波江丰电子材料有限公司 | 镍靶坯及靶材的制造方法 |
CN102418058A (zh) * | 2011-12-02 | 2012-04-18 | 宁波江丰电子材料有限公司 | 镍靶坯及靶材的制造方法 |
KR20150023767A (ko) * | 2012-07-04 | 2015-03-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 스퍼터링 타겟 |
JP5958183B2 (ja) * | 2012-08-27 | 2016-07-27 | 三菱マテリアル株式会社 | Ni又はNi合金スパッタリングターゲット及びその製造方法 |
CN104726829A (zh) * | 2013-12-18 | 2015-06-24 | 有研亿金新材料股份有限公司 | 一种高纯NiPt合金靶材及其制备方法 |
EP3106540B1 (en) | 2014-03-27 | 2018-04-25 | JX Nippon Mining & Metals Corp. | Method of producing a ni-p alloy or a ni-pt-p alloy sputtering target |
CN104190885B (zh) * | 2014-08-28 | 2016-06-01 | 云南钛业股份有限公司 | 一种四枪电子束冷床炉生产巨型高纯镍锭方坯的方法 |
JP6459601B2 (ja) * | 2015-02-17 | 2019-01-30 | 三菱マテリアル株式会社 | Niスパッタリングターゲット |
CN105861999B (zh) * | 2016-04-05 | 2018-08-07 | 基迈克材料科技(苏州)有限公司 | 高纯细晶金属镍热挤压旋转靶材 |
CN105734507B (zh) * | 2016-04-05 | 2018-06-19 | 基迈克材料科技(苏州)有限公司 | 成膜均匀的细晶镍合金旋转靶材及其热挤压优化制备方法 |
CN114657345B (zh) * | 2022-03-31 | 2024-04-09 | 先导薄膜材料(广东)有限公司 | 铁靶材、铁镍合金靶材以及靶材的晶粒细化方法 |
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2002
- 2002-01-18 JP JP2002009981A patent/JP4376487B2/ja not_active Expired - Lifetime
- 2002-11-28 EP EP02788679A patent/EP1467000B1/en not_active Expired - Lifetime
- 2002-11-28 CN CNB028271947A patent/CN1314832C/zh not_active Expired - Lifetime
- 2002-11-28 DE DE60235838T patent/DE60235838D1/de not_active Expired - Lifetime
- 2002-11-28 US US10/498,147 patent/US7740718B2/en active Active
- 2002-11-28 KR KR1020047009389A patent/KR100600974B1/ko active IP Right Grant
- 2002-11-28 WO PCT/JP2002/012438 patent/WO2003062487A1/ja active Application Filing
- 2002-12-05 TW TW091135263A patent/TW583328B/zh not_active IP Right Cessation
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2006
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US5334267A (en) * | 1992-08-03 | 1994-08-02 | Hitachi Metals, Ltd. | Sputtering target for magnetic recording medium and method of producing the same |
Also Published As
Publication number | Publication date |
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US20060137782A1 (en) | 2006-06-29 |
JP2003213406A (ja) | 2003-07-30 |
US7618505B2 (en) | 2009-11-17 |
US20040256035A1 (en) | 2004-12-23 |
KR20040068595A (ko) | 2004-07-31 |
EP1467000A4 (en) | 2008-05-21 |
CN1615374A (zh) | 2005-05-11 |
TW200302289A (en) | 2003-08-01 |
JP4376487B2 (ja) | 2009-12-02 |
KR100600974B1 (ko) | 2006-07-13 |
EP1467000A1 (en) | 2004-10-13 |
DE60235838D1 (de) | 2010-05-12 |
EP1467000B1 (en) | 2010-03-31 |
TW583328B (en) | 2004-04-11 |
WO2003062487A1 (fr) | 2003-07-31 |
US7740718B2 (en) | 2010-06-22 |
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