AU2001265309A1 - Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method - Google Patents
Fine grain size material, sputtering target, methods of forming, and micro-arc reduction methodInfo
- Publication number
- AU2001265309A1 AU2001265309A1 AU2001265309A AU6530901A AU2001265309A1 AU 2001265309 A1 AU2001265309 A1 AU 2001265309A1 AU 2001265309 A AU2001265309 A AU 2001265309A AU 6530901 A AU6530901 A AU 6530901A AU 2001265309 A1 AU2001265309 A1 AU 2001265309A1
- Authority
- AU
- Australia
- Prior art keywords
- micro
- methods
- forming
- grain size
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C23/00—Extruding metal; Impact extrusion
- B21C23/001—Extruding metal; Impact extrusion to improve the material properties, e.g. lateral extrusion
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58632600A | 2000-06-02 | 2000-06-02 | |
US09586326 | 2000-06-02 | ||
PCT/US2001/017798 WO2001094660A2 (en) | 2000-06-02 | 2001-05-31 | Sputtering target |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001265309A1 true AU2001265309A1 (en) | 2001-12-17 |
Family
ID=24345278
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001265309A Abandoned AU2001265309A1 (en) | 2000-06-02 | 2001-05-31 | Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2001265309A1 (en) |
TW (1) | TW593719B (en) |
WO (1) | WO2001094660A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6946039B1 (en) | 2000-11-02 | 2005-09-20 | Honeywell International Inc. | Physical vapor deposition targets, and methods of fabricating metallic materials |
WO2003042421A1 (en) * | 2001-11-13 | 2003-05-22 | Praxair S.T. Technology, Inc. | High-purity aluminum sputter targets |
JP4376487B2 (en) | 2002-01-18 | 2009-12-02 | 日鉱金属株式会社 | Manufacturing method of high purity nickel alloy target |
US6896748B2 (en) * | 2002-07-18 | 2005-05-24 | Praxair S.T. Technology, Inc. | Ultrafine-grain-copper-base sputter targets |
JP2008538591A (en) * | 2005-04-21 | 2008-10-30 | ハネウエル・インターナシヨナル・インコーポレーテツド | Ruthenium-based materials and ruthenium alloys |
EP1739196B1 (en) | 2005-06-29 | 2009-02-18 | Shin-Etsu Chemical Co., Ltd. | Rare earth metal member of high surface purity and making method |
CN111519157B (en) * | 2020-06-23 | 2021-06-11 | 中国科学院宁波材料技术与工程研究所 | Preparation method and application of Cr-Al-C series MAX phase coating |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3506782B2 (en) * | 1994-11-24 | 2004-03-15 | オリンパス株式会社 | Manufacturing method of optical thin film |
US5590389A (en) * | 1994-12-23 | 1996-12-31 | Johnson Matthey Electronics, Inc. | Sputtering target with ultra-fine, oriented grains and method of making same |
JP3713332B2 (en) * | 1996-06-21 | 2005-11-09 | 同和鉱業株式会社 | Single crystal copper target and manufacturing method thereof |
US5993621A (en) * | 1997-07-11 | 1999-11-30 | Johnson Matthey Electronics, Inc. | Titanium sputtering target |
US6569270B2 (en) * | 1997-07-11 | 2003-05-27 | Honeywell International Inc. | Process for producing a metal article |
US6001227A (en) * | 1997-11-26 | 1999-12-14 | Applied Materials, Inc. | Target for use in magnetron sputtering of aluminum for forming metallization films having low defect densities and methods for manufacturing and using such target |
US6348139B1 (en) * | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
US6423161B1 (en) * | 1999-10-15 | 2002-07-23 | Honeywell International Inc. | High purity aluminum materials |
-
2001
- 2001-05-31 WO PCT/US2001/017798 patent/WO2001094660A2/en active Application Filing
- 2001-05-31 AU AU2001265309A patent/AU2001265309A1/en not_active Abandoned
- 2001-06-19 TW TW90113344A patent/TW593719B/en active
Also Published As
Publication number | Publication date |
---|---|
TW593719B (en) | 2004-06-21 |
WO2001094660A3 (en) | 2002-05-30 |
WO2001094660A2 (en) | 2001-12-13 |
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