WO2001094660A3 - Sputtering target - Google Patents

Sputtering target Download PDF

Info

Publication number
WO2001094660A3
WO2001094660A3 PCT/US2001/017798 US0117798W WO0194660A3 WO 2001094660 A3 WO2001094660 A3 WO 2001094660A3 US 0117798 W US0117798 W US 0117798W WO 0194660 A3 WO0194660 A3 WO 0194660A3
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
grains
grain size
sputtering
deforming
Prior art date
Application number
PCT/US2001/017798
Other languages
French (fr)
Other versions
WO2001094660A2 (en
Inventor
Vladimir Segal
Michael Thomas
Jianxing Li
Stephane Ferrasse
Frank Alford
Tim Scott
Stephen Turner
Original Assignee
Honeywell Int Inc
Vladimir Segal
Michael Thomas
Jianxing Li
Stephane Ferrasse
Frank Alford
Tim Scott
Stephen Turner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc, Vladimir Segal, Michael Thomas, Jianxing Li, Stephane Ferrasse, Frank Alford, Tim Scott, Stephen Turner filed Critical Honeywell Int Inc
Priority to AU2001265309A priority Critical patent/AU2001265309A1/en
Publication of WO2001094660A2 publication Critical patent/WO2001094660A2/en
Publication of WO2001094660A3 publication Critical patent/WO2001094660A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C23/00—Extruding metal; Impact extrusion
    • B21C23/001—Extruding metal; Impact extrusion to improve the material properties, e.g. lateral extrusion

Abstract

A material may include grains of sizes such that at least 99 % of a measured area contains grains that exhibit grain areas less than 10 times an area of a mean grain size of the measured area. As examples, at least 99 % of the measured area may contain grains with grain areas less than 8, 6, or 3 times the area of the mean grain size. The grains may also have a mean grain size of less than 3 times a minimum statically recrystallized grain size, for example, a mean grain size less than about 50 microns, 10 microns, or 1 micron. The material may be comprised by a sputtering target and a thin film may be deposited on a substrate from such a sputtering target. A micro-are reduction method may include sputtering a film from a sputtering target comprising grains of sizes as described. A sputtering target forming method may include deforming a sputtering material. After the deforming, the sputtering material may be shaped into at least a portion of a sputtering target. The sputtering target may include grains of sizes as described. Also, the deforming may induce a strain level corresponding to ε of at least about 4. Further, the deforming may include equal channel angular extrusion.
PCT/US2001/017798 2000-06-02 2001-05-31 Sputtering target WO2001094660A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001265309A AU2001265309A1 (en) 2000-06-02 2001-05-31 Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58632600A 2000-06-02 2000-06-02
US09/586,326 2000-06-02

Publications (2)

Publication Number Publication Date
WO2001094660A2 WO2001094660A2 (en) 2001-12-13
WO2001094660A3 true WO2001094660A3 (en) 2002-05-30

Family

ID=24345278

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/017798 WO2001094660A2 (en) 2000-06-02 2001-05-31 Sputtering target

Country Status (3)

Country Link
AU (1) AU2001265309A1 (en)
TW (1) TW593719B (en)
WO (1) WO2001094660A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6946039B1 (en) 2000-11-02 2005-09-20 Honeywell International Inc. Physical vapor deposition targets, and methods of fabricating metallic materials
WO2003042421A1 (en) * 2001-11-13 2003-05-22 Praxair S.T. Technology, Inc. High-purity aluminum sputter targets
JP4376487B2 (en) 2002-01-18 2009-12-02 日鉱金属株式会社 Manufacturing method of high purity nickel alloy target
US6896748B2 (en) * 2002-07-18 2005-05-24 Praxair S.T. Technology, Inc. Ultrafine-grain-copper-base sputter targets
JP2008538591A (en) * 2005-04-21 2008-10-30 ハネウエル・インターナシヨナル・インコーポレーテツド Ruthenium-based materials and ruthenium alloys
EP1739196B1 (en) 2005-06-29 2009-02-18 Shin-Etsu Chemical Co., Ltd. Rare earth metal member of high surface purity and making method
CN111519157B (en) * 2020-06-23 2021-06-11 中国科学院宁波材料技术与工程研究所 Preparation method and application of Cr-Al-C series MAX phase coating

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08146201A (en) * 1994-11-24 1996-06-07 Olympus Optical Co Ltd Production of optical thin film
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JPH108244A (en) * 1996-06-21 1998-01-13 Dowa Mining Co Ltd Single crystal copper target and its production as well as semiconductor internal wiring formed by using the same
WO1999002743A1 (en) * 1997-07-11 1999-01-21 Johnson Matthey Electronics, Inc. Metal article with fine uniform structures and textures and process of making same
WO1999027150A1 (en) * 1997-11-26 1999-06-03 Applied Materials, Inc. Sputtering target
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
WO1999066100A1 (en) * 1998-06-17 1999-12-23 Johnson Matthey Electronics, Inc. Metal article with fine uniform structures and textures and process of making same
WO2001029279A1 (en) * 1999-10-15 2001-04-26 Honeywell International Inc. Process for producing sputtering target materials

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08146201A (en) * 1994-11-24 1996-06-07 Olympus Optical Co Ltd Production of optical thin film
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JPH108244A (en) * 1996-06-21 1998-01-13 Dowa Mining Co Ltd Single crystal copper target and its production as well as semiconductor internal wiring formed by using the same
WO1999002743A1 (en) * 1997-07-11 1999-01-21 Johnson Matthey Electronics, Inc. Metal article with fine uniform structures and textures and process of making same
US5993621A (en) * 1997-07-11 1999-11-30 Johnson Matthey Electronics, Inc. Titanium sputtering target
WO1999027150A1 (en) * 1997-11-26 1999-06-03 Applied Materials, Inc. Sputtering target
WO1999066100A1 (en) * 1998-06-17 1999-12-23 Johnson Matthey Electronics, Inc. Metal article with fine uniform structures and textures and process of making same
WO2001029279A1 (en) * 1999-10-15 2001-04-26 Honeywell International Inc. Process for producing sputtering target materials

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
FERRASSE S ET AL: "DEVELOPMENT OF A SUBMICROMETER-GRAINED MICROSTRUCTURE IN ALUMINUM 6061 USING EQUAL CHANNEL ANGULAR EXTRUSION", JOURNAL OF MATERIALS RESEARCH, NEW YORK, NY, US, vol. 12, no. 5, May 1997 (1997-05-01), pages 1253 - 1261, XP001014420, ISSN: 0884-2914 *
FERRASSE S ET AL: "MICROSTRUCTURE AND PROPERTIES OF COPPER AND ALUMINUM ALLOY 3003 HEAVILY WORKED BY EQUAL CHANNEL ANGULAR EXTRUSION", METALLURGICAL AND MATERIALS TRANSACTIONS A: PHYSICAL METALLURGY &MATERIALS SCIENCE, THE MINERALS, METALS AND MATERIALS SOCIETY, US, vol. 28A, no. 4, April 1997 (1997-04-01), pages 1047 - 1057, XP001002966, ISSN: 1073-5623 *
MUKAI T ET AL: "Dynamic mechanical properties of a near-nano aluminum alloy processed by equal-channel-angular-extrusion", NANOSTRUCTURED MATERIALS, ELSEVIER, NEW YORK, NY, US, vol. 10, no. 5, July 1998 (1998-07-01), pages 755 - 765, XP004150282, ISSN: 0965-9773 *
PATENT ABSTRACTS OF JAPAN vol. 1996, no. 10 31 October 1996 (1996-10-31) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 05 30 April 1998 (1998-04-30) *

Also Published As

Publication number Publication date
TW593719B (en) 2004-06-21
AU2001265309A1 (en) 2001-12-17
WO2001094660A2 (en) 2001-12-13

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