KR100558561B1 - 반도체 메모리 장치 - Google Patents

반도체 메모리 장치 Download PDF

Info

Publication number
KR100558561B1
KR100558561B1 KR1020040086504A KR20040086504A KR100558561B1 KR 100558561 B1 KR100558561 B1 KR 100558561B1 KR 1020040086504 A KR1020040086504 A KR 1020040086504A KR 20040086504 A KR20040086504 A KR 20040086504A KR 100558561 B1 KR100558561 B1 KR 100558561B1
Authority
KR
South Korea
Prior art keywords
word line
enable signal
local
channel transistor
driver circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020040086504A
Other languages
English (en)
Korean (ko)
Inventor
전병길
민병준
이강운
이한주
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020040086504A priority Critical patent/KR100558561B1/ko
Priority to US11/232,170 priority patent/US7345945B2/en
Priority to JP2005303346A priority patent/JP2006127741A/ja
Application granted granted Critical
Publication of KR100558561B1 publication Critical patent/KR100558561B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2257—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
KR1020040086504A 2004-10-28 2004-10-28 반도체 메모리 장치 Expired - Fee Related KR100558561B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020040086504A KR100558561B1 (ko) 2004-10-28 2004-10-28 반도체 메모리 장치
US11/232,170 US7345945B2 (en) 2004-10-28 2005-09-21 Line driver circuit for a semiconductor memory device
JP2005303346A JP2006127741A (ja) 2004-10-28 2005-10-18 半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040086504A KR100558561B1 (ko) 2004-10-28 2004-10-28 반도체 메모리 장치

Publications (1)

Publication Number Publication Date
KR100558561B1 true KR100558561B1 (ko) 2006-03-10

Family

ID=36261660

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040086504A Expired - Fee Related KR100558561B1 (ko) 2004-10-28 2004-10-28 반도체 메모리 장치

Country Status (3)

Country Link
US (1) US7345945B2 (enExample)
JP (1) JP2006127741A (enExample)
KR (1) KR100558561B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111633B2 (en) 2013-05-21 2015-08-18 Samsung Electronics Co., Ltd. Semiconductor memory device having sub word line driver and driving method thereof

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7782661B2 (en) * 2007-04-24 2010-08-24 Magic Technologies, Inc. Boosted gate voltage programming for spin-torque MRAM array
JP4913878B2 (ja) * 2009-05-27 2012-04-11 ルネサスエレクトロニクス株式会社 ワード線選択回路、ロウデコーダ
CN102646449B (zh) * 2011-02-17 2016-03-23 宜扬科技股份有限公司 区域字元线驱动器及其闪存阵列装置
US10460787B1 (en) * 2018-05-16 2019-10-29 Palo Alto Research Center Incorporated Selection circuit usable with ferroelectric memory
US10803918B2 (en) * 2018-05-18 2020-10-13 AUCMOS Technologies USA, Inc. Ferroelectric memory array with hierarchical plate-line architecture
US11114148B1 (en) * 2020-04-16 2021-09-07 Wuxi Petabyte Technologies Co., Ltd. Efficient ferroelectric random-access memory wordline driver, decoder, and related circuits
US11361812B2 (en) 2020-10-27 2022-06-14 Taiwan Semiconductor Manufacturing Company Limited Sub-word line driver placement for memory device
US11398276B2 (en) 2020-12-01 2022-07-26 Micron Technology, Inc. Decoder architecture for memory device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945077A (ja) * 1995-07-25 1997-02-14 Hitachi Ltd 半導体記憶装置
JPH10275468A (ja) 1997-03-31 1998-10-13 Hitachi Ltd ダイナミック型ｒａｍ
JP2000187984A (ja) 1998-12-24 2000-07-04 Matsushita Electric Ind Co Ltd 半導体記憶装置及び副ワード線駆動信号発生回路
KR20010028297A (ko) * 1999-09-20 2001-04-06 김영환 불휘발성 강유전체 메모리 장치 및 그 구동회로
JP2001344966A (ja) 2000-06-06 2001-12-14 Toshiba Corp 半導体記憶装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69413567T2 (de) * 1993-01-12 1999-06-02 Koninklijke Philips Electronics N.V., Eindhoven Prozessorsystem mit ferroelektrischem Speicher
KR0122107B1 (ko) * 1994-06-04 1997-12-05 김광호 저전력 셀프리프레쉬 및 번-인 기능을 가지는 반도체메모리장치
US5761148A (en) * 1996-12-16 1998-06-02 Cypress Semiconductor Corp. Sub-word line driver circuit for memory blocks of a semiconductor memory device
KR100253277B1 (ko) * 1997-02-19 2000-05-01 김영환 계층적워드라인구조
JP3228319B2 (ja) * 1997-04-07 2001-11-12 日本電気株式会社 半導体装置
JP4059951B2 (ja) * 1997-04-11 2008-03-12 株式会社ルネサステクノロジ 半導体記憶装置
US5867445A (en) 1997-10-06 1999-02-02 Vanguard International Semiconductor Corporation Local word line decoder for memory with 2 MOS devices
US5896344A (en) 1997-10-06 1999-04-20 Vanguard International Semiconductor Corporation Local word line decoder for memory with 2 1/2 MOS devices
KR100268875B1 (ko) * 1998-05-13 2000-10-16 김영환 비휘발성 강유전체 메모리소자의 구동회로
JP2001094069A (ja) * 1999-09-21 2001-04-06 Mitsubishi Electric Corp 半導体記憶装置
JP2001319473A (ja) * 2000-05-12 2001-11-16 Oki Electric Ind Co Ltd 強誘電体メモリ装置およびその動作方法
JP2002133873A (ja) * 2000-10-23 2002-05-10 Matsushita Electric Ind Co Ltd 半導体記憶装置
KR100381958B1 (ko) * 2000-10-30 2003-04-26 삼성전자주식회사 강유전체 램 장치
JP2004071023A (ja) * 2002-08-05 2004-03-04 Elpida Memory Inc 半導体記憶装置
JP2005064165A (ja) * 2003-08-11 2005-03-10 Hitachi Ltd 半導体集積回路装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0945077A (ja) * 1995-07-25 1997-02-14 Hitachi Ltd 半導体記憶装置
JPH10275468A (ja) 1997-03-31 1998-10-13 Hitachi Ltd ダイナミック型ｒａｍ
JP2000187984A (ja) 1998-12-24 2000-07-04 Matsushita Electric Ind Co Ltd 半導体記憶装置及び副ワード線駆動信号発生回路
KR20010028297A (ko) * 1999-09-20 2001-04-06 김영환 불휘발성 강유전체 메모리 장치 및 그 구동회로
JP2001344966A (ja) 2000-06-06 2001-12-14 Toshiba Corp 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111633B2 (en) 2013-05-21 2015-08-18 Samsung Electronics Co., Ltd. Semiconductor memory device having sub word line driver and driving method thereof

Also Published As

Publication number Publication date
US7345945B2 (en) 2008-03-18
JP2006127741A (ja) 2006-05-18
US20060092750A1 (en) 2006-05-04

Similar Documents

Publication Publication Date Title
CN112420094B (zh) 共享晶体管的字线驱动器以及相关的存储器装置和系统
KR100510483B1 (ko) 반도체 메모리장치의 워드라인 드라이버
KR102436347B1 (ko) 반도체 메모리 장치 및 그의 위크 셀 검출 방법
CN101656102B (zh) 半导体存储装置及其驱动方法
KR100391152B1 (ko) 조기동작 고전압 발생기를 가지는 반도체 장치 및 그에따른 고전압 공급방법
KR100520016B1 (ko) 강유전체 반도체 메모리
US7248535B2 (en) Semiconductor memory devices having negatively biased sub word line scheme and methods of driving the same
US7046572B2 (en) Low power manager for standby operation of memory system
KR100678427B1 (ko) 소비 전력이 감소되고 시험 시간이 단축된 반도체 기억 장치
US7898898B2 (en) Semiconductor memory apparatus having a sub-word line driver for increasing an area margin in the memory core area
US7313050B2 (en) Word-line driver for memory devices
KR100534216B1 (ko) 반도체 메모리에서의 워드라인 드라이버 회로 및 그에따른 구동방법
KR100558561B1 (ko) 반도체 메모리 장치
JP2016062625A (ja) 半導体装置
KR100769492B1 (ko) 반도체 집적 회로
US7099177B2 (en) Nonvolatile ferroelectric memory device having power control function
US7286411B2 (en) Row decoder circuit for use in non-volatile memory device
KR100597639B1 (ko) 저전력 소모를 위한 반도체 메모리 장치
US6487138B2 (en) Semiconductor memory
JP2005222659A (ja) 半導体記憶装置
KR100361866B1 (ko) 반도체 메모리 소자의 워드라인 구동방법
JP2013131263A (ja) 半導体装置
KR100359859B1 (ko) 메모리소자의 셀트랜지스터
JP2008532201A (ja) メモリデバイス用デコーダ
KR20010087025A (ko) 서브 워드 라인 드라이버의 안정된 부스팅 마진을 얻을 수있는 반도체 메모리 장치

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20110302

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20120303

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20120303

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000