KR100530242B1 - 집적회로제조시감소된측벽축적을갖는금속에칭방법 - Google Patents

집적회로제조시감소된측벽축적을갖는금속에칭방법 Download PDF

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Publication number
KR100530242B1
KR100530242B1 KR1019980023053A KR19980023053A KR100530242B1 KR 100530242 B1 KR100530242 B1 KR 100530242B1 KR 1019980023053 A KR1019980023053 A KR 1019980023053A KR 19980023053 A KR19980023053 A KR 19980023053A KR 100530242 B1 KR100530242 B1 KR 100530242B1
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KR
South Korea
Prior art keywords
etching
barrier layer
layer
sputter component
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019980023053A
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English (en)
Korean (ko)
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KR19990007125A (ko
Inventor
무니어 디. 나엠
스튜어트 엠. 번스
낸시 그레코
스티브 그레코
비린더 그레발
어니스트 레빈
마사끼 나리타
브루노 스풀러
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
가부시끼가이샤 도시바
지멘스 악티엔게젤샤프트
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15777909&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR100530242(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 인터내셔널 비지네스 머신즈 코포레이션, 가부시끼가이샤 도시바, 지멘스 악티엔게젤샤프트 filed Critical 인터내셔널 비지네스 머신즈 코포레이션
Publication of KR19990007125A publication Critical patent/KR19990007125A/ko
Application granted granted Critical
Publication of KR100530242B1 publication Critical patent/KR100530242B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Drying Of Semiconductors (AREA)
KR1019980023053A 1997-06-20 1998-06-19 집적회로제조시감소된측벽축적을갖는금속에칭방법 Expired - Fee Related KR100530242B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/879,727 1997-06-20
JP97-163646 1997-06-20
JP16364697A JP4056107B2 (ja) 1997-06-20 1997-06-20 半導体集積回路

Publications (2)

Publication Number Publication Date
KR19990007125A KR19990007125A (ko) 1999-01-25
KR100530242B1 true KR100530242B1 (ko) 2006-01-27

Family

ID=15777909

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019980023053A Expired - Fee Related KR100530242B1 (ko) 1997-06-20 1998-06-19 집적회로제조시감소된측벽축적을갖는금속에칭방법
KR1019980023054A Expired - Lifetime KR100566410B1 (ko) 1997-06-20 1998-06-19 반도체 집적회로

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019980023054A Expired - Lifetime KR100566410B1 (ko) 1997-06-20 1998-06-19 반도체 집적회로

Country Status (4)

Country Link
US (4) US6107869A (https=)
JP (1) JP4056107B2 (https=)
KR (2) KR100530242B1 (https=)
TW (1) TW382802B (https=)

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JP3609003B2 (ja) * 2000-05-02 2005-01-12 シャープ株式会社 Ｃｍｏｓ半導体集積回路
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US6946901B2 (en) * 2001-05-22 2005-09-20 The Regents Of The University Of California Low-power high-performance integrated circuit and related methods
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US6781892B2 (en) * 2001-12-26 2004-08-24 Intel Corporation Active leakage control in single-ended full-swing caches
JP3786608B2 (ja) * 2002-01-28 2006-06-14 株式会社ルネサステクノロジ 半導体集積回路装置
KR100993517B1 (ko) * 2002-03-27 2010-11-10 더 리전트 오브 더 유니버시티 오브 캘리포니아 집적 회로, 집적 회로 구동 회로, 및 관련방법
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JP2005101522A (ja) * 2003-08-21 2005-04-14 Matsushita Electric Ind Co Ltd 半導体集積回路装置
US7026843B1 (en) * 2004-01-16 2006-04-11 Spansion Llc Flexible cascode amplifier circuit with high gain for flash memory cells
JP4200926B2 (ja) 2004-03-10 2008-12-24 ソニー株式会社 半導体集積回路
US8255828B2 (en) 2004-08-16 2012-08-28 Microsoft Corporation Command user interface for displaying selectable software functionality controls
US8146016B2 (en) 2004-08-16 2012-03-27 Microsoft Corporation User interface for displaying a gallery of formatting options applicable to a selected object
US7703036B2 (en) 2004-08-16 2010-04-20 Microsoft Corporation User interface for displaying selectable software functionality controls that are relevant to a selected object
US7527446B2 (en) * 2005-04-29 2009-05-05 The Procter & Gamble Company Children's combination toothbrush and toothpaste dispenser, and method
US8627222B2 (en) 2005-09-12 2014-01-07 Microsoft Corporation Expanded search and find user interface
KR100704039B1 (ko) * 2006-01-20 2007-04-04 삼성전자주식회사 디코딩 신호가 워드라인 방향으로 버싱되는 반도체 메모리장치
JP2007227625A (ja) * 2006-02-23 2007-09-06 Toshiba Microelectronics Corp 半導体集積回路及びそのレイアウト設計方法
US7791406B1 (en) 2006-04-04 2010-09-07 Marvell International Ltd. Low leakage power management
US7606057B2 (en) * 2006-05-31 2009-10-20 Arm Limited Metal line layout in a memory cell
US9727989B2 (en) 2006-06-01 2017-08-08 Microsoft Technology Licensing, Llc Modifying and formatting a chart using pictorially provided chart elements
US7408830B2 (en) * 2006-11-07 2008-08-05 Taiwan Semiconductor Manufacturing Co. Dynamic power supplies for semiconductor devices
US7808804B2 (en) * 2006-11-10 2010-10-05 Samsung Electronics Co., Ltd. Power line layout
US8762880B2 (en) 2007-06-29 2014-06-24 Microsoft Corporation Exposing non-authoring features through document status information in an out-space user interface
US8484578B2 (en) 2007-06-29 2013-07-09 Microsoft Corporation Communication between a document editor in-space user interface and a document editor out-space user interface
JP2009038306A (ja) * 2007-08-03 2009-02-19 Elpida Memory Inc 半導体記憶装置
JP5528662B2 (ja) 2007-09-18 2014-06-25 ソニー株式会社 半導体集積回路
JP4636077B2 (ja) 2007-11-07 2011-02-23 ソニー株式会社 半導体集積回路
FR2927468B1 (fr) * 2008-02-08 2010-04-23 E2V Semiconductors Circuit integre a grand nombre de circuits elementaires identiques alimentes en parallele.
JP4492736B2 (ja) * 2008-06-12 2010-06-30 ソニー株式会社 半導体集積回路
US9665850B2 (en) 2008-06-20 2017-05-30 Microsoft Technology Licensing, Llc Synchronized conversation-centric message list and message reading pane
US8717093B2 (en) * 2010-01-08 2014-05-06 Mindspeed Technologies, Inc. System on chip power management through package configuration
JP5709197B2 (ja) * 2010-05-21 2015-04-30 国立大学法人 東京大学 集積回路装置
JP2015076111A (ja) * 2013-10-08 2015-04-20 マイクロン テクノロジー， インク． 半導体装置
US10020252B2 (en) 2016-11-04 2018-07-10 Micron Technology, Inc. Wiring with external terminal
US10354705B2 (en) 2017-07-05 2019-07-16 Micron Technology, Inc. Apparatuses and methods for controlling word lines and sense amplifiers
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TWI646515B (zh) * 2018-01-19 2019-01-01 友達光電股份有限公司 顯示裝置
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US11361814B2 (en) * 2020-10-29 2022-06-14 Micron Technology, Inc. Column selector architecture with edge mat optimization
US12482519B2 (en) 2023-01-19 2025-11-25 Micron Technology, Inc. Microelectronic devices and memory devices

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JPH0435064A (ja) * 1990-05-31 1992-02-05 Oki Electric Ind Co Ltd 半導体記憶装置
US5160407A (en) * 1991-01-02 1992-11-03 Applied Materials, Inc. Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer
US5280450A (en) * 1990-05-14 1994-01-18 Hitachi, Ltd. High-speed semicondustor memory integrated circuit arrangement having power and signal lines with reduced resistance
JPH08195083A (ja) * 1995-01-17 1996-07-30 Toshiba Microelectron Corp 半導体記憶装置
JPH0974175A (ja) * 1995-09-04 1997-03-18 Texas Instr Japan Ltd 半導体装置及び半導体メモリ装置

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US5280450A (en) * 1990-05-14 1994-01-18 Hitachi, Ltd. High-speed semicondustor memory integrated circuit arrangement having power and signal lines with reduced resistance
JPH0435064A (ja) * 1990-05-31 1992-02-05 Oki Electric Ind Co Ltd 半導体記憶装置
US5160407A (en) * 1991-01-02 1992-11-03 Applied Materials, Inc. Low pressure anisotropic etch process for tantalum silicide or titanium silicide layer formed over polysilicon layer deposited on silicon oxide layer on semiconductor wafer
JPH08195083A (ja) * 1995-01-17 1996-07-30 Toshiba Microelectron Corp 半導体記憶装置
JPH0974175A (ja) * 1995-09-04 1997-03-18 Texas Instr Japan Ltd 半導体装置及び半導体メモリ装置

Also Published As

Publication number Publication date
TW382802B (en) 2000-02-21
US6339358B1 (en) 2002-01-15
US6747509B2 (en) 2004-06-08
US7199648B2 (en) 2007-04-03
US20040217776A1 (en) 2004-11-04
KR100566410B1 (ko) 2007-08-16
US6107869A (en) 2000-08-22
JP4056107B2 (ja) 2008-03-05
JPH1117135A (ja) 1999-01-22
KR19990007126A (ko) 1999-01-25
US20020057129A1 (en) 2002-05-16
KR19990007125A (ko) 1999-01-25

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