KR100371986B1 - 레이저 열처리용 광학장치, 레이저 열처리 장치 및 반도체의 제조방법 - Google Patents

레이저 열처리용 광학장치, 레이저 열처리 장치 및 반도체의 제조방법 Download PDF

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Publication number
KR100371986B1
KR100371986B1 KR10-2000-0035042A KR20000035042A KR100371986B1 KR 100371986 B1 KR100371986 B1 KR 100371986B1 KR 20000035042 A KR20000035042 A KR 20000035042A KR 100371986 B1 KR100371986 B1 KR 100371986B1
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South Korea
Prior art keywords
laser
intensity distribution
laser beam
film material
substrate
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Expired - Lifetime
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KR10-2000-0035042A
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English (en)
Korean (ko)
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KR20010021028A (ko
Inventor
오카모토다쓰키
오가와데쓰야
후루타게이스케
도키오카히데타다
사사가와도모히로
니시마에준이치
이노우에미쓰오
사토유키오
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0732—Shaping the laser spot into a rectangular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
KR10-2000-0035042A 1999-06-25 2000-06-24 레이저 열처리용 광학장치, 레이저 열처리 장치 및 반도체의 제조방법 Expired - Lifetime KR100371986B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP17923399A JP3562389B2 (ja) 1999-06-25 1999-06-25 レーザ熱処理装置
JP1999-179233 1999-06-25

Publications (2)

Publication Number Publication Date
KR20010021028A KR20010021028A (ko) 2001-03-15
KR100371986B1 true KR100371986B1 (ko) 2003-02-14

Family

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Family Applications (1)

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KR10-2000-0035042A Expired - Lifetime KR100371986B1 (ko) 1999-06-25 2000-06-24 레이저 열처리용 광학장치, 레이저 열처리 장치 및 반도체의 제조방법

Country Status (8)

Country Link
US (1) US6437284B1 (enExample)
EP (1) EP1063049B1 (enExample)
JP (1) JP3562389B2 (enExample)
KR (1) KR100371986B1 (enExample)
CN (1) CN1146027C (enExample)
CA (1) CA2312223A1 (enExample)
DE (1) DE60027820T2 (enExample)
TW (1) TW469539B (enExample)

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555449B1 (en) 1996-05-28 2003-04-29 Trustees Of Columbia University In The City Of New York Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
DE19931751A1 (de) * 1999-07-08 2001-01-11 Zeiss Carl Fa Vorrichtung zur Reduzierung der Peakleistung einer Pulslaser-Lichtquelle
US6635588B1 (en) * 2000-06-12 2003-10-21 Ultratech Stepper, Inc. Method for laser thermal processing using thermally induced reflectivity switch
US6884699B1 (en) 2000-10-06 2005-04-26 Mitsubishi Denki Kabushiki Kaisha Process and unit for production of polycrystalline silicon film
JP2002141301A (ja) 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用光学系とこれを用いたレーザアニーリング装置
AU2002307442A1 (en) 2001-04-23 2002-11-05 Dee E. Willden Wedge-shaped lensless laser focusing device
US6897477B2 (en) 2001-06-01 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and display device
US6847006B2 (en) * 2001-08-10 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Laser annealing apparatus and semiconductor device manufacturing method
JP3977038B2 (ja) 2001-08-27 2007-09-19 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法
US6962860B2 (en) * 2001-11-09 2005-11-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7050878B2 (en) 2001-11-22 2006-05-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductror fabricating apparatus
KR100967824B1 (ko) 2001-11-30 2010-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제작방법
US7133737B2 (en) 2001-11-30 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer
US7214573B2 (en) * 2001-12-11 2007-05-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes patterning sub-islands
US7113527B2 (en) * 2001-12-21 2006-09-26 Semiconductor Energy Laboratory Co., Ltd. Method and apparatus for laser irradiation and manufacturing method of semiconductor device
AU2003258289A1 (en) 2002-08-19 2004-03-03 The Trustees Of Columbia University In The City Of New York A single-shot semiconductor processing system and method having various irradiation patterns
TWI378307B (en) 2002-08-19 2012-12-01 Univ Columbia Process and system for laser crystallization processing of film regions on a substrate to minimize edge areas, and structure of such film regions
JP4278940B2 (ja) * 2002-09-09 2009-06-17 株式会社 液晶先端技術開発センター 結晶化装置および結晶化方法
JP2004134785A (ja) * 2002-09-19 2004-04-30 Semiconductor Energy Lab Co Ltd ビームホモジナイザおよびレーザ照射装置、並びに半導体装置の作製方法
EP1400832B1 (en) 2002-09-19 2014-10-22 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
US7097709B2 (en) * 2002-11-27 2006-08-29 Mitsubishi Denki Kabushiki Kaisha Laser annealing apparatus
TWI300950B (en) * 2002-11-29 2008-09-11 Adv Lcd Tech Dev Ct Co Ltd Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same
JP2004260144A (ja) * 2003-02-06 2004-09-16 Mitsubishi Electric Corp レーザアニーリング方法および装置
JP5164378B2 (ja) 2003-02-19 2013-03-21 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
JP4494045B2 (ja) * 2003-03-11 2010-06-30 株式会社半導体エネルギー研究所 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法
US7327916B2 (en) * 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
JP4619035B2 (ja) * 2003-04-24 2011-01-26 株式会社半導体エネルギー研究所 ビームホモジナイザ及びレーザ照射装置、並びに半導体装置の作製方法
SG137674A1 (en) 2003-04-24 2007-12-28 Semiconductor Energy Lab Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4660074B2 (ja) * 2003-05-26 2011-03-30 富士フイルム株式会社 レーザアニール装置
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7164152B2 (en) 2003-09-16 2007-01-16 The Trustees Of Columbia University In The City Of New York Laser-irradiated thin films having variable thickness
US7318866B2 (en) * 2003-09-16 2008-01-15 The Trustees Of Columbia University In The City Of New York Systems and methods for inducing crystallization of thin films using multiple optical paths
WO2005029546A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination
WO2005029549A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Method and system for facilitating bi-directional growth
WO2005029551A2 (en) 2003-09-16 2005-03-31 The Trustees Of Columbia University In The City Of New York Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
WO2005034193A2 (en) 2003-09-19 2005-04-14 The Trustees Of Columbia University In The City Ofnew York Single scan irradiation for crystallization of thin films
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP2005129916A (ja) * 2003-09-30 2005-05-19 Semiconductor Energy Lab Co Ltd ビームホモジナイザ、レーザ照射装置、半導体装置の作製方法
JP3960295B2 (ja) * 2003-10-31 2007-08-15 住友電気工業株式会社 チルト誤差低減非球面ホモジナイザー
US7091124B2 (en) 2003-11-13 2006-08-15 Micron Technology, Inc. Methods for forming vias in microelectronic devices, and methods for packaging microelectronic devices
US8084866B2 (en) 2003-12-10 2011-12-27 Micron Technology, Inc. Microelectronic devices and methods for filling vias in microelectronic devices
JP4416481B2 (ja) * 2003-11-18 2010-02-17 ギガフォトン株式会社 光学的パルス伸長器および露光用放電励起ガスレーザ装置
JP4838982B2 (ja) * 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
TWI272149B (en) 2004-02-26 2007-02-01 Ultratech Inc Laser scanning apparatus and methods for thermal processing
KR100514996B1 (ko) * 2004-04-19 2005-09-15 주식회사 이오테크닉스 레이저 가공 장치
US20050237895A1 (en) * 2004-04-23 2005-10-27 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method for manufacturing semiconductor device
US20050247894A1 (en) * 2004-05-05 2005-11-10 Watkins Charles M Systems and methods for forming apertures in microfeature workpieces
US7232754B2 (en) 2004-06-29 2007-06-19 Micron Technology, Inc. Microelectronic devices and methods for forming interconnects in microelectronic devices
US7083425B2 (en) 2004-08-27 2006-08-01 Micron Technology, Inc. Slanted vias for electrical circuits on circuit boards and other substrates
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7387954B2 (en) * 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2006046495A1 (en) * 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
US7645337B2 (en) 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
US8093530B2 (en) * 2004-11-19 2012-01-10 Canon Kabushiki Kaisha Laser cutting apparatus and laser cutting method
US8221544B2 (en) 2005-04-06 2012-07-17 The Trustees Of Columbia University In The City Of New York Line scan sequential lateral solidification of thin films
JP2006295068A (ja) * 2005-04-14 2006-10-26 Sony Corp 照射装置
EP1722449B1 (de) * 2005-05-12 2008-10-22 Innovavent GmbH Verwendung eines Scheibenlasers zur Kristallisation von Siliziumschichten
US7795134B2 (en) 2005-06-28 2010-09-14 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
WO2007022234A1 (en) * 2005-08-16 2007-02-22 The Trustees Of Columbia University In The City Of New York Systems and methods for uniform sequential lateral solidification of thin films using high frequency lasers
US7622377B2 (en) * 2005-09-01 2009-11-24 Micron Technology, Inc. Microfeature workpiece substrates having through-substrate vias, and associated methods of formation
US7262134B2 (en) 2005-09-01 2007-08-28 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7863187B2 (en) 2005-09-01 2011-01-04 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
WO2007067541A2 (en) 2005-12-05 2007-06-14 The Trustees Of Columbia University In The City Of New York Systems and methods for processing a film, and thin films
US7749899B2 (en) 2006-06-01 2010-07-06 Micron Technology, Inc. Microelectronic workpieces and methods and systems for forming interconnects in microelectronic workpieces
US8803027B2 (en) 2006-06-05 2014-08-12 Cymer, Llc Device and method to create a low divergence, high power laser beam for material processing applications
US7629249B2 (en) 2006-08-28 2009-12-08 Micron Technology, Inc. Microfeature workpieces having conductive interconnect structures formed by chemically reactive processes, and associated systems and methods
US7902643B2 (en) 2006-08-31 2011-03-08 Micron Technology, Inc. Microfeature workpieces having interconnects and conductive backplanes, and associated systems and methods
JP2008068270A (ja) * 2006-09-12 2008-03-27 Disco Abrasive Syst Ltd レーザー加工装置
KR100878159B1 (ko) * 2007-04-19 2009-01-13 주식회사 코윈디에스티 레이저 가공장치
US7573930B2 (en) 2007-06-14 2009-08-11 Innovavent Gmbh Anamorphotic solid-sate laser
US20090046757A1 (en) * 2007-08-16 2009-02-19 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus, laser irradiation method, and manufacturing method of semiconductor device
SG150410A1 (en) 2007-08-31 2009-03-30 Micron Technology Inc Partitioned through-layer via and associated systems and methods
TW200942935A (en) 2007-09-21 2009-10-16 Univ Columbia Collections of laterally crystallized semiconductor islands for use in thin film transistors and systems and methods for making same
WO2009042784A1 (en) 2007-09-25 2009-04-02 The Trustees Of Columbia University In The City Of New York Methods of producing high uniformity in thin film transistor devices fabricated on laterally crystallized thin films
DE102007052782B4 (de) * 2007-11-02 2017-02-16 Saint-Gobain Glass France S.A. Verfahren zur Veränderung der Eigenschaften einer TCO-Schicht
EP2212913A4 (en) 2007-11-21 2013-10-30 Univ Columbia SYSTEMS AND METHOD FOR PRODUCING EPITACTIC STRUCTURED THICK FILMS
WO2009067688A1 (en) 2007-11-21 2009-05-28 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US8012861B2 (en) 2007-11-21 2011-09-06 The Trustees Of Columbia University In The City Of New York Systems and methods for preparing epitaxially textured polycrystalline films
US7884015B2 (en) 2007-12-06 2011-02-08 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
WO2009111340A2 (en) 2008-02-29 2009-09-11 The Trustees Of Columbia University In The City Of New York Flash lamp annealing crystallization for large area thin films
KR100908325B1 (ko) * 2008-07-11 2009-07-17 주식회사 코윈디에스티 레이저 가공방법
KR20110094022A (ko) 2008-11-14 2011-08-19 더 트러스티이스 오브 콜롬비아 유니버시티 인 더 시티 오브 뉴욕 박막 결정화를 위한 시스템 및 방법
US9302346B2 (en) 2009-03-20 2016-04-05 Corning, Incorporated Precision laser scoring
KR20100107253A (ko) * 2009-03-25 2010-10-05 삼성모바일디스플레이주식회사 기판 절단 장치 및 이를 이용한 기판 절단 방법
US8440581B2 (en) 2009-11-24 2013-05-14 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse sequential lateral solidification
US9646831B2 (en) 2009-11-03 2017-05-09 The Trustees Of Columbia University In The City Of New York Advanced excimer laser annealing for thin films
US9087696B2 (en) 2009-11-03 2015-07-21 The Trustees Of Columbia University In The City Of New York Systems and methods for non-periodic pulse partial melt film processing
JP5891504B2 (ja) * 2011-03-08 2016-03-23 株式会社Ｊｏｌｅｄ 薄膜トランジスタアレイ装置の製造方法
SG11201405535PA (en) * 2012-04-18 2014-11-27 Applied Materials Inc Apparatus and method to reduce particles in advance anneal process
FR3063395B1 (fr) * 2017-02-28 2021-05-28 Centre Nat Rech Scient Source laser pour l'emission d'un groupe d'impulsions
CN109520898A (zh) * 2019-01-22 2019-03-26 河北工业大学 一种柱透镜变换的激光粒度测试方法
US11560987B2 (en) * 2019-11-20 2023-01-24 Nichia Corporation Light source device
CN112916873B (zh) * 2021-01-26 2022-01-28 上海交通大学 基于脉冲激光驱动的微滴三维打印系统及方法
WO2023070615A1 (en) * 2021-10-30 2023-05-04 Yangtze Memory Technologies Co., Ltd. Methods for thermal treatment of a semiconductor layer in semiconductor device
WO2025220773A1 (ko) * 2024-04-19 2025-10-23 주식회사 이오테크닉스 레이저 장치 및 이를 포함하는 가공 장치
CN118768736A (zh) * 2024-07-12 2024-10-15 中南大学 一种基于线状超快激光焊接透明材料的新方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583478B2 (ja) * 1978-03-03 1983-01-21 株式会社日立製作所 レ−ザ加熱方法および装置
US4327972A (en) * 1979-10-22 1982-05-04 Coulter Electronics, Inc. Redirecting surface for desired intensity profile
JPS58127318A (ja) * 1982-01-25 1983-07-29 Nippon Telegr & Teleph Corp <Ntt> 絶縁層上への単結晶膜形成方法
JPS6161657A (ja) 1984-09-03 1986-03-29 Matsushita Electric Ind Co Ltd イオン風式空気清浄機
US4744615A (en) * 1986-01-29 1988-05-17 International Business Machines Corporation Laser beam homogenizer
US4793694A (en) * 1986-04-23 1988-12-27 Quantronix Corporation Method and apparatus for laser beam homogenization
JPS63314862A (ja) * 1987-06-17 1988-12-22 Nec Corp 薄膜トランジスタの製造方法
DE3829728A1 (de) * 1987-09-02 1989-03-23 Lambda Physik Forschung Verfahren und vorrichtung zum homogenisieren der intensitaetsverteilung im querschnit eines laserstrahls
DE3818504A1 (de) * 1988-05-31 1991-01-03 Fraunhofer Ges Forschung Verfahren und vorrichtung fuer die kristallisation duenner halbleiterschichten auf einem substratmaterial
JPH02175090A (ja) * 1988-12-27 1990-07-06 Isamu Miyamoto レーザビーム成形装置
JPH0433791A (ja) * 1990-05-29 1992-02-05 Matsushita Electric Ind Co Ltd レーザ加工装置
JP3149450B2 (ja) * 1991-04-04 2001-03-26 セイコーエプソン株式会社 薄膜トランジスタの製造方法及び製造装置
JPH06124913A (ja) * 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
WO1995026517A1 (en) * 1992-11-10 1995-10-05 United States Department Of Energy Laser beam pulse formatting method
KR100299292B1 (ko) * 1993-11-02 2001-12-01 이데이 노부유끼 다결정실리콘박막형성방법및그표면처리장치
US5733641A (en) * 1996-05-31 1998-03-31 Xerox Corporation Buffered substrate for semiconductor devices
JPH10244392A (ja) * 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP3402124B2 (ja) 1997-06-04 2003-04-28 住友重機械工業株式会社 ビームホモジナイザ及び半導体薄膜作製方法
JP3484481B2 (ja) 1997-06-19 2004-01-06 住友重機械工業株式会社 ビームホモジナイザ及びそれを用いた半導体薄膜の製造方法

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