SG11201405535PA - Apparatus and method to reduce particles in advance anneal process - Google Patents
Apparatus and method to reduce particles in advance anneal processInfo
- Publication number
- SG11201405535PA SG11201405535PA SG11201405535PA SG11201405535PA SG11201405535PA SG 11201405535P A SG11201405535P A SG 11201405535PA SG 11201405535P A SG11201405535P A SG 11201405535PA SG 11201405535P A SG11201405535P A SG 11201405535PA SG 11201405535P A SG11201405535P A SG 11201405535PA
- Authority
- SG
- Singapore
- Prior art keywords
- advance
- anneal process
- reduce particles
- particles
- reduce
- Prior art date
Links
- 239000002245 particle Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
- B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- High Energy & Nuclear Physics (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Recrystallisation Techniques (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261635136P | 2012-04-18 | 2012-04-18 | |
PCT/US2013/033441 WO2013158335A1 (en) | 2012-04-18 | 2013-03-22 | Apparatus and method to reduce particles in advance anneal process |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201405535PA true SG11201405535PA (en) | 2014-11-27 |
Family
ID=49380495
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201405535PA SG11201405535PA (en) | 2012-04-18 | 2013-03-22 | Apparatus and method to reduce particles in advance anneal process |
Country Status (7)
Country | Link |
---|---|
US (1) | US9214346B2 (en) |
JP (2) | JP2015521368A (en) |
KR (1) | KR102108939B1 (en) |
CN (2) | CN104160489A (en) |
SG (1) | SG11201405535PA (en) |
TW (1) | TWI622099B (en) |
WO (1) | WO2013158335A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201517133A (en) * | 2013-10-07 | 2015-05-01 | Applied Materials Inc | Enabling high activation of dopants in indium-aluminum-gallium-nitride material system using hot implantation and nanosecond annealing |
CN109427541A (en) * | 2017-08-29 | 2019-03-05 | 中芯国际集成电路制造(北京)有限公司 | The forming method of semiconductor devices |
KR102405231B1 (en) * | 2018-01-19 | 2022-06-03 | 엔씨씨 나노, 엘엘씨 | How to Cure Solder Paste on Heat Vulnerable Substrates |
JP7108185B2 (en) * | 2018-11-22 | 2022-07-28 | 富士通株式会社 | Optimizer and method of controlling the optimizer |
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US4131363A (en) * | 1977-12-05 | 1978-12-26 | International Business Machines Corporation | Pellicle cover for projection printing system |
JPS59137789A (en) * | 1983-01-27 | 1984-08-07 | Matsushita Electric Ind Co Ltd | Latent-heat type heat accumulator |
JPH06100825B2 (en) * | 1985-08-29 | 1994-12-12 | 富士通株式会社 | Pattern formation method |
JPH0444309A (en) * | 1990-06-12 | 1992-02-14 | Seiko Epson Corp | Method of projection exposure and manufacture of semiconductor device |
JPH04174846A (en) * | 1990-11-08 | 1992-06-23 | Matsushita Electron Corp | Mask protection member |
JP3149450B2 (en) * | 1991-04-04 | 2001-03-26 | セイコーエプソン株式会社 | Method and apparatus for manufacturing thin film transistor |
JPH04370925A (en) * | 1991-06-20 | 1992-12-24 | Hitachi Ltd | Mask for laser annealing, laser annealing method and device |
JPH06140304A (en) | 1992-10-29 | 1994-05-20 | Nikon Corp | Projection aligner |
JPH0866790A (en) * | 1994-08-30 | 1996-03-12 | Sony Corp | Laser beam machine |
US5576125A (en) | 1995-07-27 | 1996-11-19 | Micro Lithography, Inc. | Method for making an optical pellicle |
JPH09260257A (en) | 1996-03-26 | 1997-10-03 | Canon Inc | Projection exposure device for preventing lens from being contaminated and production process of semiconductor device using it |
US5793836A (en) * | 1996-09-06 | 1998-08-11 | International Business Machines Corporation | X-ray mask pellicle |
TW445545B (en) * | 1999-03-10 | 2001-07-11 | Mitsubishi Electric Corp | Laser heat treatment method, laser heat treatment apparatus and semiconductor device |
JP3562389B2 (en) * | 1999-06-25 | 2004-09-08 | 三菱電機株式会社 | Laser heat treatment equipment |
JP2001023918A (en) * | 1999-07-08 | 2001-01-26 | Nec Corp | Semiconductor thin-film forming apparatus |
JP4841740B2 (en) | 2000-04-26 | 2011-12-21 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
EP1160624B1 (en) * | 2000-06-01 | 2006-04-26 | Asahi Glass Company Ltd. | Pellicle and method of using the same |
US6792029B2 (en) * | 2002-03-27 | 2004-09-14 | Sharp Laboratories Of America, Inc. | Method of suppressing energy spikes of a partially-coherent beam |
US6829035B2 (en) | 2002-11-12 | 2004-12-07 | Applied Materials Israel, Ltd. | Advanced mask cleaning and handling |
US7919726B2 (en) * | 2002-11-29 | 2011-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device |
JP4364611B2 (en) * | 2002-11-29 | 2009-11-18 | 株式会社半導体エネルギー研究所 | Method for manufacturing crystalline semiconductor film |
US7162223B2 (en) | 2004-02-17 | 2007-01-09 | Teamon Systems, Inc. | System and method for notifying users of an event using alerts |
JP2005277007A (en) * | 2004-03-24 | 2005-10-06 | Hitachi Ltd | Polycrystalline semiconductor film manufacturing method, apparatus therefor, and image display panel |
KR100778389B1 (en) | 2006-02-14 | 2007-11-21 | 한국과학기술원 | Laser Cleaning Appartus and Method for the Contaminants on a Optically Transparent Substrate |
US7927991B2 (en) * | 2006-08-25 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP5110830B2 (en) * | 2006-08-31 | 2012-12-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
US8148663B2 (en) * | 2007-07-31 | 2012-04-03 | Applied Materials, Inc. | Apparatus and method of improving beam shaping and beam homogenization |
US20090120924A1 (en) * | 2007-11-08 | 2009-05-14 | Stephen Moffatt | Pulse train annealing method and apparatus |
US7800081B2 (en) | 2007-11-08 | 2010-09-21 | Applied Materials, Inc. | Pulse train annealing method and apparatus |
JP2009230020A (en) * | 2008-03-25 | 2009-10-08 | Lasertec Corp | Defect correction device, defect correction method and method for manufacturing patterned substrate |
US7473501B1 (en) | 2008-03-30 | 2009-01-06 | International Business Machines Corporation | Method for reducing photo-mask distortion |
US20100124709A1 (en) * | 2008-11-20 | 2010-05-20 | Daniel Warren Hawtof | Image mask assembly for photolithography |
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US8569187B2 (en) * | 2011-06-24 | 2013-10-29 | Applied Materials, Inc. | Thermal processing apparatus |
-
2013
- 2013-03-22 KR KR1020147030256A patent/KR102108939B1/en active IP Right Grant
- 2013-03-22 WO PCT/US2013/033441 patent/WO2013158335A1/en active Application Filing
- 2013-03-22 CN CN201380012265.7A patent/CN104160489A/en active Pending
- 2013-03-22 US US13/849,097 patent/US9214346B2/en not_active Expired - Fee Related
- 2013-03-22 CN CN201710619013.0A patent/CN107579022B/en active Active
- 2013-03-22 JP JP2015507019A patent/JP2015521368A/en active Pending
- 2013-03-22 SG SG11201405535PA patent/SG11201405535PA/en unknown
- 2013-03-25 TW TW102110524A patent/TWI622099B/en active
-
2018
- 2018-02-19 JP JP2018026659A patent/JP6526855B6/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2018117134A (en) | 2018-07-26 |
CN107579022A (en) | 2018-01-12 |
WO2013158335A1 (en) | 2013-10-24 |
JP6526855B2 (en) | 2019-06-05 |
US9214346B2 (en) | 2015-12-15 |
US20130280923A1 (en) | 2013-10-24 |
TW201344798A (en) | 2013-11-01 |
CN104160489A (en) | 2014-11-19 |
TWI622099B (en) | 2018-04-21 |
JP6526855B6 (en) | 2019-06-26 |
KR102108939B1 (en) | 2020-05-12 |
CN107579022B (en) | 2021-03-16 |
JP2015521368A (en) | 2015-07-27 |
KR20150003769A (en) | 2015-01-09 |
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