KR100313746B1 - 프로그래밍 가변성을 감소시키는 플래시 메모리 ｖｄｓ 보상 기술 - Google Patents

프로그래밍 가변성을 감소시키는 플래시 메모리 ｖｄｓ 보상 기술 Download PDF

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Publication number
KR100313746B1
KR100313746B1 KR1019997008899A KR19997008899A KR100313746B1 KR 100313746 B1 KR100313746 B1 KR 100313746B1 KR 1019997008899 A KR1019997008899 A KR 1019997008899A KR 19997008899 A KR19997008899 A KR 19997008899A KR 100313746 B1 KR100313746 B1 KR 100313746B1
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South Korea
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source
nonvolatile memory
bit line
voltage
memory cell
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KR20010005825A (ko
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키니스티븐엔.
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피터 엔. 데트킨
인텔 코오퍼레이션
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
KR1019997008899A 1997-03-31 1999-09-29 프로그래밍 가변성을 감소시키는 플래시 메모리 ｖｄｓ 보상 기술 Expired - Fee Related KR100313746B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/828,873 1997-03-31
US08/828,873 US5798966A (en) 1997-03-31 1997-03-31 Flash memory VDS compensation techiques to reduce programming variability
US8/828,873 1997-03-31

Publications (2)

Publication Number Publication Date
KR20010005825A KR20010005825A (ko) 2001-01-15
KR100313746B1 true KR100313746B1 (ko) 2001-11-16

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KR1019997008899A Expired - Fee Related KR100313746B1 (ko) 1997-03-31 1999-09-29 프로그래밍 가변성을 감소시키는 플래시 메모리 ｖｄｓ 보상 기술

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US (1) US5798966A (enExample)
JP (1) JP4173555B2 (enExample)
KR (1) KR100313746B1 (enExample)
CN (1) CN100392759C (enExample)
AU (1) AU6252398A (enExample)
DE (1) DE19882265B4 (enExample)
TW (1) TW425557B (enExample)
WO (1) WO1998044510A1 (enExample)
ZA (1) ZA981131B (enExample)

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Also Published As

Publication number Publication date
ZA981131B (en) 1999-08-11
JP2001517350A (ja) 2001-10-02
DE19882265T1 (de) 2000-05-25
WO1998044510A1 (en) 1998-10-08
US5798966A (en) 1998-08-25
CN1251683A (zh) 2000-04-26
AU6252398A (en) 1998-10-22
KR20010005825A (ko) 2001-01-15
TW425557B (en) 2001-03-11
CN100392759C (zh) 2008-06-04
DE19882265B4 (de) 2005-02-10
JP4173555B2 (ja) 2008-10-29

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